| More News | Teaser | NewsID | NewsSection | Title | Text | Announced | AnnouncedMMM | Picture | PicturePath | WebLink | WebLinkText |
| dataTec Innovation Day | dataTec and selected partner companies are hosting... | 12439 | Event News | dataTec Innovation Day | dataTec and selected partner companies are hosting an Innovation Day on September 25, 2025, in Stuttgart - bringing together theory, practice, and product worlds. Experience the latest developments up close and discover how ideas turn into real solutions. A day full of knowledge, exchange, and hands-on experience. Whether you're looking to dive deep into a specific topic or gain a broad overview, Innovation Day offers valuable insights for engineers, technicians, developers, users, and decision-makers. | 11.07.2025 06:00:00 | Jul | news_2025-07-15_1.jpg | \images\news_2025-07-15_1.jpg | https://www.datatec.eu/de/en/innovationstag | datatec.eu |
| Compact MOSFET for Fast Charging Applications | ROHM has developed a 30 V N-channel MOSFET named A... | 12453 | Product Release | Compact MOSFET for Fast Charging Applications | ROHM has developed a 30 V N-channel MOSFET named AW2K21 in a common-source configuration that achieves "an industry-leading ON-resistance of 2.0 mΩ (typ.) in a compact 2.0 mm × 2.0 mm package". Compact devices featuring large-capacity batteries, such as smartphones, need fast charging functionalities requiring bidirectional protection to prevent reverse current flow to peripheral ICs and other components when not actively supplying or receiving power. The maximum current rating for these applications is 20A, with a breakdown voltage between 28 V and 30 V, and an ON-resistance of 5 mΩ or less. The AW2K21 consists of two MOSFETs integrated into a single package, allowing a single part to support bidirectional protection applications. Application examples are smartphones, VR headsets, compact printers, tablets, wearables, LCD monitors, laptop computers, portable gaming consoles or drones. | 08.07.2025 13:30:00 | Jul | news_2025-07-15_15.jpg | \images\news_2025-07-15_15.jpg | https://www.rohm.com/news-detail?news-title=2025-07-08_news_mosfet&defaultGroupId=false | rohm.com |
| Supervisory Board appoints Alexander Gorski Chief Operations Officer | Dr. Rutger Wijburg, Member of the Management Board... | 12443 | People | Supervisory Board appoints Alexander Gorski Chief Operations Officer | Dr. Rutger Wijburg, Member of the Management Board and Chief Operations Officer (COO) of Infineon Technologies, will resign from his position at the end of the fiscal year on 30 September 2025 at his own request and will retire after being a member of the Management Board of Infineon Technologies and Chief Operations Officer since April 2022. The Supervisory Board has appointed Alexander Gorski as his successor, effective as of 1 October 2025. Alexander Gorski is currently Executive Vice President and Head of Frontend Operations at Infineon and will be responsible for Operations, Procurement, Supply Chain and Quality Management in his new position as COO. His mandate as Chief Operations Officer will last for three years as is customary for first appointments. As Head of Backend and later as Head of Frontend Operations, Alexander Gorski has strategically developed Infineon's manufacturing landscape over the last few years. After completing his MBA at the University of Regensburg, he began his career at Infineon (until 1999 Siemens) in 1998 and subsequently took on various management positions in the areas of Operations, Supply Chain and Sales. Alexander Gorski worked for a solar company as a board member and managing director for seven years. He returned to Infineon in 2016 as COO of the Power & Sensor Systems division, becoming Head of Backend in 2021 and Head of Frontend in 2024. | 07.07.2025 10:00:00 | Jul | news_2025-07-15_5.jpg | \images\news_2025-07-15_5.jpg | https://www.infineon.com/press-release/2025/INFXX202507-123 | infineon.com |
| ESD Protection Diodes for 48 V EV Communications Networks | Nexperia introduced "the industry's first ESD diod... | 12452 | Product Release | ESD Protection Diodes for 48 V EV Communications Networks | Nexperia introduced "the industry's first ESD diodes designed to protect 48 V automotive data communications networks against the destructive effects of electrostatic discharge (ESD) events". These six AEC-Q101 qualified devices covers the required higher reverse working maximum voltage (V<sub>RWM</sub>) for increasingly common 48 V board nets. This saves PCB space and system cost while maintaining signal integrity even at higher data rates. While data communications protocols like CAN and CAN-FD, as well as LIN and FlexRay have been around for several decades, their proven reliability in lower speed applications means they continue to feature in even the most recent automobiles, including (H)EVs. However, unlike conventional internal combustion engine powered vehicles that have a 12 V battery, or commercial vehicles that feature a 24 V battery, the higher efficiency requirements of EVs and HEVs mean they are increasingly moving towards using a 48 V battery to power various electrical systems, including these legacy communications networks. The family consists of ESD diodes with 54 V (PESD2CANFD54VT-Q and PESD2CANFD54LT-Q), 60 V (PESD2CANFD60VT-Q and PESD2CANFD60LT-Q) and 72 V (PESD2CANFD72VT-Q and PESD2CANFD72LT-Q) maximum V<sub>RWM</sub>. These devices with a capacitance down to 3.4 pF are packaged in a standard SOT23 package. The optimized capacitance ensures that signal integrity is not impacted even in higher-speed protocols like CAN-FD. | 02.07.2025 12:30:00 | Jul | news_2025-07-15_14.jpg | \images\news_2025-07-15_14.jpg | https://www.nexperia.com/about/news-events/press-releases/Nexperia-releases-industry-s-first-ESD-protection-diodes-for-48-V-EV-communications-networks | nexperia.com |
| Steve Sanghi to Continue as CEO and President | Microchip Technology Incorporated announced that S... | 12444 | People | Steve Sanghi to Continue as CEO and President | Microchip Technology Incorporated announced that Steve Sanghi has agreed to continue to serve as the company's Chief Executive Officer and President on a permanent basis. Mr. Sanghi had been serving in such roles on an interim basis since November 2024. Mr. Sanghi will also continue to serve as Chair of the Microchip Board of Directors. Prior to his retirement as Microchip's CEO in 2021, Mr. Sanghi had served as Microchip's CEO for almost 30 years. Mr. Sanghi commented, "I have been a leader of Microchip for over 30 years and look forward to continuing to serve the company on a long-term basis. Although several of the elements of our recovery plan have been completed or substantially implemented, some of the other elements of the plan, such as achieving our long-term operating model, will require sustained efforts. I am thankful that the Board is entrusting me to continue to guide the company towards achievement of its goals." | 02.07.2025 11:00:00 | Jul | news_2025-07-15_6.jpg | \images\news_2025-07-15_6.jpg | https://ir.microchip.com/news-events/press-releases/detail/1322/steve-sanghi-to-continue-as-microchip-ceo-and-president-on-a-permanent-basis | microchip.com |
| Acquisition to expand T&M Portfolio for Power Electronics | Rohde & Schwarz has acquired ZES ZIMMER Electronic... | 12442 | Industry News | Acquisition to expand T&M Portfolio for Power Electronics | Rohde & Schwarz has acquired ZES ZIMMER Electronic Systems GmbH. The privately owned company based in Oberursel/Germany, has been designing, developing and manufacturing high-precision power measurement equipment for four decades. The acquisition complements the Rohde & Schwarz (R&S) test and measurement product portfolio and is considered by R&S to be "an important step that contributes to the company's long-term growth strategy and will benefit the customers of both companies". The family owned ZES ZIMMER Electronic Systems with around sixty employees will be fully integrated into the Rohde & Schwarz group. The location will be retained and will continue to be used for power measurement equipment. | 02.07.2025 09:00:00 | Jul | news_2025-07-15_4.jpg | \images\news_2025-07-15_4.jpg | https://www.rohde-schwarz.com/about/news-press/all-news/rohde-schwarz-acquires-zes-zimmer-electronic-systems-gmbh-and-expands-its-t-m-portfolio-for-power-electronics-press-release-detailpage_229356-1571283.html | rohde-schwarz.com |
| Series of DC Energy Meters for Fast and Megawatt EV Chargers | LEM introduced the DCES600 and DCES1500 meters to ... | 12454 | Product Release | Series of DC Energy Meters for Fast and Megawatt EV Chargers | LEM introduced the DCES600 and DCES1500 meters to enable DC charging infrastructure manufacturers to design both fast and megawatt charging solutions, with kilowatt-hour (kWh) billing services in applications up to e-truck charging. They are designed to achieve class B accuracy at charger level with currents of up to 1500 A, at operating temperatures from –40 °C to +85 °C without derating. Their accuracy is maintained across the entire current range, for precise measurements throughout the full charging cycle, from high currents at the start to low currents near completion. Designers can access the DCES meters over an RS485 communication interface that provides cybersecurity features. These features include authentication of measurements using digital signatures, and facilities that enable secure remote maintenance and firmware updates. LEM is also offering a set of application programming interfaces (APIs) for software integration, and other software tools to ease testing and product integration. The DCES meters are available with an optional remote display unit, the RDU, which can be mounted on a front panel, DIN rail, or base plate without needing additional connections, such as communications lines or power sources, other than its link to the DCES meters. The devices offer real-time reporting of voltage, current, temperature and energy. LEM is now in the process of the certification of the DCES series by the end of the year. The DCES meters will then be compliant with European regulations such as MID 2014/32/EU, the EU's Directive on measuring instruments, and with Eichrecht, the German calibration law. | 01.07.2025 14:30:00 | Jul | news_2025-07-15_16.jpg | \images\news_2025-07-15_16.jpg | https://www.lem.com/en/dces | lem.com |
| DC Meters for High-Power and Megawatt Charging | Isabellenhütte introduces the IEM-DCR, the second ... | 12451 | Product Release | DC Meters for High-Power and Megawatt Charging | Isabellenhütte introduces the IEM-DCR, the second generation of DC meters that meet the requirements of accurate energy measurement for charging infrastructure and legally compliant billing. Isabellenhütte currently offers several versions of the DC meter. The IEM-DCR-125, with a current measurement range of 125 A and voltage of 1,000 V, is suitable for DC wall boxes. The IEM-DCR-1000, with up to 1,000 A and an extended voltage range of 1,500 V, is designed for high-power charging up to 1.5 MW. It is claimed to be "the first meter on the market to cover the 1,500 V voltage class". The IEM-DCR-1500, with 1,500 A and also a voltage range up to 1,500 V, is suited for megawatt charging applications and is currently undergoing certification. The IEM-DCR meters consist of separate display and sensor units for direct integration into charging stations. A further development compared to the first generation of meters is a CAN interface for the transmission of real-time measurement data (current, voltage, temperature and power). In addition, this generation allows bi-directional measurements and the creation of charging transactions in OCMF format. The energy meters also offer two options for compensating for cable losses. The IEM-DCR-125 and IEM-DCR-1000 have been certified and meet Accuracy Class B (EN 50470) and Class 1 (IEC 62053-41). In addition to the certification under German calibration law, the meters are also certified under the EU Measuring Instruments Directive (MID). | 01.07.2025 11:30:00 | Jul | news_2025-07-15_13.jpg | \images\news_2025-07-15_13.jpg | https://www.isabellenhuette.com/news/dc-meters-for-high-power-and-megawatt-charging | isabellenhuette.com |
| GaN FETs for High-Density Power Conversion | Renesas introduced three high-voltage 650 V GaN FE... | 12446 | Product Release | GaN FETs for High-Density Power Conversion | Renesas introduced three high-voltage 650 V GaN FETs for AI data centers and server power supply systems including the 800 V HVDC architecture, E-mobility charging, UPS battery backup devices, battery energy storage and solar inverters. Designed for multi-kilowatt-class applications, these 4th-generation plus (Gen IV Plus) devices combine GaN technology with a silicon-compatible gate drive input, significantly reducing switching power loss while retaining the operating simplicity of silicon FETs. Offered in TOLT, TO-247 and TOLL package options, the devices give engineers the flexibility to customize their thermal management and board design for specific power architectures. The TP65H030G4PRS, TP65H030G4PWS and TP65H030G4PQS devices are based on low-loss d-mode technology and claimed to "offer superior efficiency over silicon, silicon carbide (SiC), and other GaN offerings". Moreover, they are marketed to "minimize power loss with lower gate charge, output capacitance, crossover loss, and dynamic resistance impact, with a higher 4 V threshold voltage, which is not achievable with today's enhancement mode (e-mode) GaN devices". Built on a die that is 14 percent smaller than the previous Gen IV platform, the Gen IV Plus products achieve a lower R<sub>DS(on)</sub> of 30 mΩ, reducing on-resistance by 14 % and delivering a 20 % improvement in on-resistance output-capacitance-product figure of merit (FOM). These features make the Gen IV Plus devices suitable for cost-conscious, thermally demanding applications where high performance, efficiency and small footprint are critical. They are fully compatible with existing designs for easy upgrades. | 01.07.2025 06:30:00 | Jul | news_2025-07-15_8.jpg | \images\news_2025-07-15_8.jpg | https://www.renesas.com/en/about/newsroom/renesas-strengthens-power-leadership-new-gan-fets-high-density-power-conversion-ai-data-centers | renesas.com |
| Power Management IC Textbook | Wiley-IEEE Press has published "Design of Power Ma... | 12441 | Industry News | Power Management IC Textbook | Wiley-IEEE Press has published "Design of Power Management Integrated Circuits" by Bernhard Wicht. Spanning 457 pages, this book delivers an in-depth exploration of both foundational principles and cutting-edge innovations in power management integrated circuits (PMICs). It covers key functions such as power stages, gate Drivers, Semiconductor Devices, and Integrated Passives, and extends to LDOs, Charge Pumps, and various DC-DC Converters. A key feature of the text is its extensive collection of real-world examples, case studies, and exercises aimed at enhancing the understanding of complex design concepts and providing extensive guidance for electronics engineers. Bernhard Wicht, a Full Professor at Leibniz University Hannover, Germany, brings extensive experience from both the semiconductor industry and academia as well as contributions as part of the ISSCC Technical Program Committee and as an IEEE Distinguished Lecturer. As a guide, this publication is intended for designers, engineers, and students eager to deepen their PMIC expertise and drive advancements in high-performance computing, IoT, mobility, and renewable energy sectors. | 27.06.2025 08:00:00 | Jun | news_2025-07-15_3.jpg | \images\news_2025-07-15_3.jpg | https://www.wiley.com/en-gb/Design+of+Power+Management+Integrated+Circuits-p-9781119123064 | wiley.com |
| "MLCCs with the Industry's highest Capacitance at 100 V for Commercial Applications in the 1608 Case Size" | TDK Corporation has expanded its C series for comm... | 12438 | Product Release | "MLCCs with the Industry's highest Capacitance at 100 V for Commercial Applications in the 1608 Case Size" | TDK Corporation has expanded its C series for commercial multilayer ceramic capacitors (MLCCs) to 1 µF at 100 V in the 1608 size (1.6 mm x 0.8 mm x 0.8 mm – L x W x H), with X7R characteristics. This is claimed to be "the industry's highest capacitance for a 100-V-rated product in this size and this temperature characteristic". "This 100-V product of the C series achieves ten times the capacity of conventional products of the same size". Main applications are input capacitors for power supply ICs used in commercial and industrial 48-V systems, etc. | 26.06.2025 16:30:00 | Jun | news_2025-07-01_18.jpg | \images\news_2025-07-01_18.jpg | https://www.tdk.com/en/news_center/press/20250626_01.html | tdk.com |
| Off-the-Shelf Radiation-Hardened 15 W DC/DC Power Converter for Space Applications | Microchip Technology announced the SA15-28 off-the... | 12437 | Product Release | Off-the-Shelf Radiation-Hardened 15 W DC/DC Power Converter for Space Applications | Microchip Technology announced the SA15-28 off-the-shelf radiation-hardened DC/DC 15 W power converter with a companion SF100-28 EMI filter that are designed to meet MIL-STD-461 specifications. This space-grade power device is a standard, non-hybrid DC/DC isolated power converter with a companion electromagnetic interference (EMI) filter that operates from a 28 V satellite bus in harsh environments. The SA15-28 is available with 5 V triple outputs that are usable with point-of-load converters and LDO linear regulators to power FPGAs and MPUs. The SA15-28 weighs 60 g and operates in the temperature range from -55 °C to +125 °C while offering a radiation tolerance up to 100 krad TID. The SF100-28 EMI noise suppression filter can be used with numerous power converters with a total output power of up to 100 W. For added flexibility in space applications, the SA15-28 and SF100-28 are fully compatible with Microchip's existing SA50 series of power converters and SF200 filter. | 26.06.2025 15:30:00 | Jun | news_2025-07-01_17.jpg | \images\news_2025-07-01_17.jpg | https://www.microchip.com/en-us/about/news-releases/products/new-off-the-shelf-radiation-hardened-15w-dc-dc-power-converter | microchip.com |
| Power Supply Unit for Flux Gate Technology Current Transducers | Danisense has introduced the DSSIU-1-V, a low-nois... | 12455 | Product Release | Power Supply Unit for Flux Gate Technology Current Transducers | Danisense has introduced the DSSIU-1-V, a low-noise power supply and interface unit designed to support a range of its flux gate current transducers (DCCTs). Featuring an industry-standard D-sub-9 connector, the DSSIU-1-V unit measures 130 mm x 116 mm x 56 mm and is equipped with an integrated Voltage Output Module (VOM), which precisely converts the measured current into a voltage output via a BNC connector. The DSSIU-1-V supports both 1 V and 10 V output options with its +/-15 V/1.2 A DC supply output generated from a universal mains input between 110 and 220 V<sub>AC</sub>. Main target applications include flux gate DCCTs, hall effect DCCTs, electric vehicle test benches, power measurement and power analysis, current calibration purposes as well as precision current sensing. | 26.06.2025 15:30:00 | Jun | news_2025-07-15_17.jpg | \images\news_2025-07-15_17.jpg | https://danisense.com/news/new-compact-1-channel-system-interface-unit/ | danisense.com |
| "World's First 10 µF / 50 VDC MLCC in 0805-inch Size for Automotive Applications" | Murata has announced the GCM21BE71H106KE02 multila... | 12434 | Product Release | "World's First 10 µF / 50 V<sub>DC</sub> MLCC in 0805-inch Size for Automotive Applications" | Murata has announced the GCM21BE71H106KE02 multilayer ceramic capacitor (MLCC) has entered mass production. The device is “the world's first 0805-inch size (2.0mm x 1.25 mm) MLCC to offer a capacitance of 10 µF with a 50 VDC rating and is specifically engineered for automotive applications”. Designed for 12 V automotive power lines, the GCM21BE71H106KE02 capacitor leverages Murata’s proprietary ceramic material and thinning technologies to help engineers to save PCB space and reduce the overall capacitor count. It offers roughly 2.1 times the capacitance of Murata’s previous 4.7 µF / 50 V<sub>DC</sub> product, despite sharing the same physical size. Furthermore, compared to the previous 10 µF / 50 V<sub>DC</sub> MLCC in the larger 1206-inch size (3.2 mm x 1.6 mm), the MLCC occupies approximately 53 % less space, providing substantial space savings for automotive applications. | 26.06.2025 12:30:00 | Jun | news_2025-07-01_14.png | \images\news_2025-07-01_14.png | https://www.murata.com/en-eu/news/capacitor/ceramiccapacitor/2025/0612 | murata.com |
| Digital Controller for GaN Totem Pole PFC | Wise Integration release to production its first f... | 12447 | Product Release | Digital Controller for GaN Totem Pole PFC | Wise Integration release to production its first fully digital controller, WiseWare® 1.1 (WIW1101) based on the MCU 32 bits. This device enables high-frequency operation up to 2 MHz, unlocking new levels of power density, efficiency, and form factor in compact AC/DC power converters. Unlike legacy analog solutions, WiseWare 1.1 leverages the speed and switching capabilities of GaN through a proprietary digital control algorithm in a MCU 32 bits, that enables zero voltage switching (ZVS) across all power transistors. Designed specifically for totem pole power-factor correction (PFC) architectures in critical-conduction mode (CrCM), this controller allows engineers to reduce the size, weight, and thickness of magnetic components while maintaining >98 percent efficiency. It supports a power range from 100 W to 1.5 kW, making it suitable for a several applications requiring both compactness and high energy efficiency. Designed with flexibility in mind, WiseWare 1.1 works seamlessly with standard GaN across the full R<sub>DS(on)</sub> spectrum. The minimum standby power consumption is 18 mW. | 26.06.2025 07:30:00 | Jun | news_2025-07-15_9.jpg | \images\news_2025-07-15_9.jpg | https://wise-integration.com/wise-integration-launches-first-digital-controller-wiseware-1-1-for-gan-totem-pole-pfc-with-high-switching-frequency-up-to-2-mhz/ | wise-integration.com |
| Isolated Gate Driver IC Optimized for High-Voltage GaN Devices | ROHM has developed an isolated gate driver IC – th... | 12435 | Product Release | Isolated Gate Driver IC Optimized for High-Voltage GaN Devices | ROHM has developed an isolated gate driver IC – the BM6GD11BFJ-LB. It is designed specifically for driving HV-GaN HEMTs. When combined with GaN devices, this driver enables stable operation under high-frequency, high-speed switching conditions – contributing to greater miniaturization and efficiency in high-current applications such as motors and server power supplies. The BM6GD11BFJ-LB utilizes proprietary on-chip isolation technology to reduce parasitic capacitance, enabling operation up to 2 MHz. This maximizes the high-frequency switching capabilities of GaN devices. This contributes not only to greater energy efficiency and performance in applications but also reduces mounting area by minimizing the size of peripheral components. At the same time, CMTI (Common-Mode Transient Immunity – an indicator of noise tolerance in noise isolated gate driver ICs) has been increased to 150 V/ns – 1.5 times higher than conventional products – preventing malfunctions caused by the high slew rates typical of GaN HEMT switching. The minimum pulse width has also been reduced to just 65 ns, which is 33% less than conventional products. With a gate drive voltage range of 4.5 V to 6.0 V and an isolation voltage of 2500 V<sub>rms</sub>, the BM6GD11BFJ-LB is designed to fully support a wide range of high-voltage GaN devices, including ROHM's 650 V EcoGaN™ HEMT. The output-side current consumption is 0.5 mA (max). Typical application are industrial equipment like Power supplies for PV inverters, ESS (Energy Storage Systems), communication base stations, servers, and industrial motors as well as consumer devices like white goods, AC adapters (USB chargers), PCs, TVs, refrigerator and air conditioners. | 25.06.2025 13:30:00 | Jun | news_2025-07-01_15.jpg | \images\news_2025-07-01_15.jpg | https://www.rohm.com/products/power-management/gate-drivers/gan-gate-drivers/bm6gd11bfj-lb-product | rohm.com |
| Power Inductors in a Performance Version | The WE-XHMI Performance series extends Würth Elekt... | 12433 | Product Release | Power Inductors in a Performance Version | The WE-XHMI Performance series extends Würth Elektronik's family of power inductors with improved versions in sizes 1010, 1060, 6030, and 6060. The magnetically shielded flat-wire inductors support high saturation currents while reducing DC. The WE-XHMI Performance SMT inductors show the ability to withstand saturation currents of up to 114 A while also handling high transient current peaks. This makes them particularly suitable for use in DC/DC converters, point-of-load converters and high-current filters, as well as in industrial computers, mainboards and graphics cards. These latest improvements now enable Würth Elektronik to meet the growing demand for low-loss solutions at high switching frequencies and maximum power density, driven by GaN and SiC transistor technologies. The new generation of molded WE-XHMI flat-wire inductors is claimed to "outperform other products of the same size by offering the lowest R<sub>DC</sub> combined with low AC losses". Compared to the standard products in the series, the "Performance" models feature an extended inductance range, a higher operating temperature (-55 °C to +150 °C), up to 30 percent lower resistance, and up to 50 percent higher rated currents. Thanks to their significantly reduced DC losses compared to inductors of the same size, they enable more efficient operation with lower self-heating. Low DC losses at higher rated currents help raise the efficiency of switching regulators. | 25.06.2025 11:30:00 | Jun | news_2025-07-01_13.jpg | \images\news_2025-07-01_13.jpg | https://www.we-online.com/en/news-center/press?instance_ID=5506&d=XHMI-Performance | we-online.com |
| Power Inductors in a Performance Version | The WE-XHMI Performance series extends Würth Elekt... | 12450 | Product Release | Power Inductors in a Performance Version | The WE-XHMI Performance series extends Würth Elektronik's family of power inductors with improved versions in sizes 1010, 1060, 6030, and 6060. The magnetically shielded flat-wire inductors support saturation currents of up to 114 A while reducing DC losses for even more efficient operation. They are suitable e. g. for use in DC/DC converters, point-of-load converters and high-current filters, as well as in industrial computers, mainboards and graphics cards. Compared to the standard products in the series, the "Performance" models feature an extended inductance range, a higher operating temperature (-55 °C to +150 °C), up to 30 percent lower resistance, and up to 50 percent higher rated currents at reduced DC losses compared to inductors of the same size. | 25.06.2025 10:30:00 | Jun | news_2025-07-15_12.jpg | \images\news_2025-07-15_12.jpg | https://www.we-online.com/en/news-center/press?instance_ID=5506&d=XHMI-Performance | we-online.com |
| 180 W GaN Buck Converter Evaluation Board for USB PD Applications | Efficient Power Conversion Corporation (EPC) intro... | 12448 | Product Release | 180 W GaN Buck Converter Evaluation Board for USB PD Applications | Efficient Power Conversion Corporation (EPC) introduced the EPC91109, a high-performance evaluation board designed to demonstrate the benefits of eGaN® FETs in a compact, thermally efficient, two-phase synchronous buck converter. Targeting USB Power Delivery (USB-PD 3.1) applications up to 180 W, the EPC91109 is optimized for space- and power-constrained designs such as laptops, portable devices, and battery-powered systems. The EPC91109 combines four 50 V-rated EPC2057 GaN FETs with the Analog Devices LTC7890, a dual-phase buck controller, to deliver output voltages of 12 V, 16 V, or 20 V from an input range of 20 V to 36 V. In two-phase interleaved mode, it supports output currents up to 14.3 A - matching the full 180 W USB-PD power envelope at 12 V output from a 36 V source. The EPC91109 Evaluation Board: is configurable to operate in either two-phase or single phase, dual-output mode, operates with a low-profile inductor of 3 mm height and has a power stage measuring 24 mm x 24 mm. Offering configurable light-load modes and dead-time settings it does not require any heatsink or forced air cooling as the peak efficiency is beyond 98 % under standard operating conditions. | 24.06.2025 08:30:00 | Jun | news_2025-07-15_10.jpg | \images\news_2025-07-15_10.jpg | https://epc-co.com/epc/about-epc/events-and-news/news/artmid/1627/articleid/3221/ultra-compact-high-efficiency-180-w-gan-buck-converter-evaluation-board-for-usb-pd-applications | epc-co.com |
| Collaboration to advance next-generation GaN Device | Silvaco Group announced a strategic R&D collaborat... | 12440 | Industry News | Collaboration to advance next-generation GaN Device | Silvaco Group announced a strategic R&D collaboration with Fraunhofer Institute for Silicon Technology (ISIT). The partnership aims to accelerate development of next-generation Gallium Nitride devices using Silvaco's Power Devices Solution to perform Design Technology Co-Optimization (DTCO). This collaboration aligns with Fraunhofer ISIT's role in the EU Chips Act initiative through its participation in the APECS pilot line. Silvaco is a provider of TCAD, EDA software, and SIP solutions that enable semiconductor design and digital twin modeling through AI software and automation. Fraunhofer ISIT's Power Electronics division is at the forefront of developing and manufacturing cutting-edge device prototypes for high-performance power electronic and sensor systems. Fraunhofer ISIT will leverage Silvaco's design tools - including the Victory TCAD™ platform, Utmost IV™, and SmartSpice™ - to perform Design Technology Co-Optimization (DTCO) for power and sensor device development. Silvaco DTCO platform will enable accelerated prototyping in Fraunhofer ISIT's post-CMOS process environment, which is set up to explore emerging processes for both GaN and MEMS technologies on 8-inch wafers. In addition, Silvaco's Victory Design of Experiments (DOE) solution will streamline development workflows and support rapid innovation during the evaluation of novel process modules and emerging device concepts. In addition to the active utilization of Silvaco's tools in R&D and industry customer projects, Fraunhofer ISIT will train students at local universities in the utilization of Silvaco's Victory TCAD platform to prepare the next generation of semiconductor device engineers. | 24.06.2025 07:00:00 | Jun | news_2025-07-15_2.jpg | \images\news_2025-07-15_2.jpg | https://investors.silvaco.com/news-releases/news-release-details/silvaco-and-fraunhofer-isit-collaborate-advance-next-generation | silvaco.com |
| Collaboration on Next-Generation Integrated Power Delivery Solution for AI and Cloud Platforms | Empower Semiconductor announced a collaboration wi... | 12425 | Industry News | Collaboration on Next-Generation Integrated Power Delivery Solution for AI and Cloud Platforms | Empower Semiconductor announced a collaboration with Marvell Technology to develop optimized integrated power solutions for Marvell® custom silicon platforms. These solutions are designed to accelerate the transformation of power delivery systems to smaller, faster, integrated power silicon chips tightly coupled with the processor. The joint solutions are part of Empower's broader mission to address the power delivery challenges of the kilowatt-chip era. By integrating power delivery with processors, Empower and Marvell enable hyperscalers and infrastructure providers to maximize their performance, efficiency, and return on investment (ROI) of artificial intelligence (AI) and cloud data centers. The collaboration leverages Empower's FinFast™ technology and vertical power delivery architecture to provide system designers with pre-validated, high-density power solutions that move voltage regulation from traditional board-level designs to silicon-integrated or near-chip solutions. By bringing power delivery closer to the processor, these solutions significantly reduce power transmission losses, improve efficiency, and support the increasing current demands of next-generation XPUs. | 18.06.2025 09:00:00 | Jun | news_2025-07-01_4.png | \images\news_2025-07-01_4.png | https://www.empowersemi.com/empower-and-marvell-announce-collaboration-on-next-generation-integrated-power-delivery-solution-for-ai-and-cloud-platforms/ | empowersemi.com |
| The EU Energy Label for Mobile Devices | A new energy label for mobile devices is mandatory... | 12427 | Industry News | The EU Energy Label for Mobile Devices | A new energy label for mobile devices is mandatory in the EU starting June 20, 2025. This applies to all smartphones and tablets with Android or iPadOS operating systems, ushering in a new era of European product policy. For the first time, an EU-wide standardized label, which Fraunhofer IZM played a key role in developing, evaluates not only the energy efficiency of devices, but also their reliability, durability, and repairability. The European regulation's goal is to greatly increase the longevity of mobile devices. According to a survey conducted by the Fraunhofer Institute for Reliability and Microintegration IZM in 2022, factors other than energy consumption are also influencing users' decisions. The survey indicated that device longevity is a crucial consideration for users. The label is closely tied to the new ecodesign requirements. Batteries should be able to withstand at least 800 charging cycles while retaining 80% of their original capacity. Manufacturers must enter all products bearing the EU energy label in a European product database (EPREL). This database can be accessed via the QR code on the energy label. This allows for informed purchasing decisions that are based on sustainability criteria and align with the principles of a circular economy. The potential savings are considerable: The new requirements are expected to reduce the primary energy consumption required for producing, distributing, and using mobile devices by nearly 14 terawatt hours per year by 2030. This reduction is equivalent to approximately one-third of the previous energy consumption throughout the products' life cycle. | 17.06.2025 11:00:00 | Jun | news_2025-07-01_6.png | \images\news_2025-07-01_6.png | https://www.izm.fraunhofer.de/en/news_events/tech_news/the-eu-energy-label-for-mobile-devices.html | izm.fraunhofer.de |
| 25 V MOSFET in DFN3.3x3.3 meets Power Demands in AI Servers | Alpha and Omega Semiconductor introduced its AONK4... | 12430 | Product Release | 25 V MOSFET in DFN3.3x3.3 meets Power Demands in AI Servers | Alpha and Omega Semiconductor introduced its AONK40202 25V MOSFET in DFN3.3x3.3 Source-Down packaging technology. Designed for high power density in DC/DC applications, the device provides features that meet the requirements of AI servers and data center power distribution. In particular, its Source-Down packaging technology offers a larger source contact to the PCB, and its center gate pin layout allows easier routing on the PCB, so the gate driver connection can be minimized. The AONK40202 MOSFET's DFN3.3x3.3 Source-Down packaging technology with clip enables continuous current capabilities up to 319 A with a maximum junction temperature rated at 175 °C. This provides significant potential for system-level improvements, such as better thermal management, enabling higher power density and greater efficiency. | 17.06.2025 08:30:00 | Jun | news_2025-07-01_10.jpg | \images\news_2025-07-01_10.jpg | https://www.aosmd.com/news/alpha-and-omega-semiconductor-introduces-25v-mosfet-dfn33x33-source-down-packaging-meets-power | aosmd.com |
| 1600 V IGBTs for energy-conscious Appliance Markets | STMicroelectronics' STGWA30IH160DF2 IGBT combines ... | 12449 | Product Release | 1600 V IGBTs for energy-conscious Appliance Markets | STMicroelectronics' STGWA30IH160DF2 IGBT combines a breakdown-voltage rating of 1600 V and a maximum junction temperature of 175°C with a current rating of 30 A in high-power applications, including induction heaters and cookers, microwave ovens, and rice cookers. Extending the STPOWER portfolio, this is the first 1600 V IGBT in ST's IH2-generation operating with a saturation voltage V<sub>CEsat</sub> of 1.77 V (typical, at rated current). The device, which is available in a TO-247 long lead package, can be used in single-switch quasi-resonant converters over a switching frequency range, from 16 kHz to 60 kHz. Featuring a positive V<sub>CE(sat)</sub> temperature coefficient with tight parameter distribution, the STGWA30IH160DF2 allows connecting multiple devices in parallel for current sharing in high-power applications. | 16.06.2025 09:30:00 | Jun | news_2025-07-15_11.jpg | \images\news_2025-07-15_11.jpg | https://community.st.com/t5/developer-news/advanced-1600v-igbts-for-cost-sensitive-energy-conscious/ba-p/812211 | st.com |
| Launch of Energy Storage Resource Hub | Arrow Electronics has launched a dedicated online ... | 12423 | Industry News | Launch of Energy Storage Resource Hub | Arrow Electronics has launched a dedicated online hub offering extensive resources for those seeking to understand the future of energy storage systems. As the global shift towards renewable energy accelerates, battery energy storage systems (BESS) are becoming critical in revolutionising energy storage and management. BESS technology plays a vital role in integrating solar and wind power, enabling the electrification of vehicles, and providing reliable backup power, ultimately enhancing sustainability and resilience across various sectors. The energy storage systems resource page provides access to a range of valuable content, including a webinar on 'Optimising Energy Storage: The Role of Advanced BMS,' an e-book on BESS, essential design resources, insightful articles exploring key energy storage topics, such as photovoltaic integration and recordings of on-demand webinars, including 'High-Power SiC MOSFETs Designed to Last.' Arrow, in collaboration with eInfochips, is driving innovation in the BESS sector by offering leading-edge components, expert engineering support, and dependable supply chain solutions. | 16.06.2025 07:00:00 | Jun | news_2025-07-01_2.jpg | \images\news_2025-07-01_2.jpg | https://www.arrow.com/en/campaigns/energy-storage-systems-solutions | arrow.com |
| CWIEME Berlin Closes with Record Energy, Innovation and Collaboration | The event for coil winding, insulation and electri... | 12445 | Event News | CWIEME Berlin Closes with Record Energy, Innovation and Collaboration | The event for coil winding, insulation and electrical manufacturing brought together industry leaders, engineers, academics and future talent to shape the future of electrical manufacturing. Welcoming a visitor footfall of 12,500+, including representatives from Hitachi, Hyundai, LG Electronics, Logitech, NIDEC, Nike, Bosch, Rolls-Royce, Schaeffler, Schneider Electric, Siemens, Tesla, Toshiba, Toyota and more. The show's conference program featured more than 90 expert speakers, covering key themes such as automation, sustainability, digitalisation and supply chain transformation. From e-mobility breakthroughs to leadership insights, the event proved once again why CWIEME Berlin is the cornerstone of the global electrical engineering calendar. Visitors explored the buzzing Innovation Zone, which hosted well-attended Power Hour presentations from its exhibitors throughout the show, and expanded Academic Excellence Hub, and the launch of the Electric Avenue helped guide guests through five exhibition halls filled with the world's most forward-thinking companies. | 12.06.2025 12:00:00 | Jun | news_2025-07-15_7.jpg | \images\news_2025-07-15_7.jpg | https://berlin.cwiemeevents.com/articles/cwieme-berlin-closes-with-record-energy | berlin.cwiemeevents.com |
| eBook on High-Density Power Modules for 48 V | Vicor explains in their latest eBook how its power... | 12436 | Product Release | eBook on High-Density Power Modules for 48 V | Vicor explains in their latest eBook how its power solutions support customers that are constantly pushing the limits of what is possible. This exclusive read entitled ‘Changing what’s Possible’ delves into how power dense Vicor modules enable many world-changing innovations across various sectors, including electric vehicles, renewable energy and advanced computing, all of which are adopting 48 V architecture. The guide from Vicor outlines the essential role of high-density power modules in optimising performance in applications which test the limits of power electronics. Through a range of case studies that highlight daunting power challenges, the eBook explains how thermally-adept Vicor power modules in tandem with Vicor propriety technology and 48 V architectures are capable of exceeding what’s possible. The eBook provides fresh insight and knowledge on different power architectures through practical examples, encouraging the adoption of best practices in power system design in order to push the boundaries of what is possible. The eBook includes in-depth analysis as it explores the latest developments in high-density power electronics and their implications for various industries. Furthermore, it also shows the actual products used in the power delivery network to better understand how to design an individual PDN. This is complemented by practical applications because the eBook teaches about real-world applications and how cutting-edge power solutions are transforming industries. | 11.06.2025 14:30:00 | Jun | news_2025-07-01_16.jpg | \images\news_2025-07-01_16.jpg | https://www.vicorpower.com/resource-library/ebook/changing-whats-possible-pi-ebook | vicorpower.com |
| On-Demand Webinar: Spectroscopic Characterization of Yield-killing Defects in Wide Bandgap Semiconductor Wafers | Wide bandgap semiconductors such as SiC, GaN, and ... | 12412 | Industry News | On-Demand Webinar: Spectroscopic Characterization of Yield-killing Defects in Wide Bandgap Semiconductor Wafers | Wide bandgap semiconductors such as SiC, GaN, and diamond are critical materials for next-generation power electronics, optoelectronics, and quantum technologies. However, their performance is highly sensitive to internal stress, strain, and defects introduced during growth and processing. In this webinar, you can explore how Raman, Photoluminescence (PL), Time-Resolved Photoluminescence and Cathodoluminescence can be powerful, non-destructive tools for characterizing these properties with high spatial and spectral resolution. It is discussed how Raman spectroscopy can reveal information about crystal quality, phonon shifts due to strain, and temperature effects, while PL provides insight into electronic and optical properties, impurity levels, and defect states. Real-world case studies and application examples highlight how these techniques can be used to optimize material growth, improve device yield, and accelerate R&D. | 11.06.2025 12:00:00 | Jun | news_2025-06-15_7.png | \images\news_2025-06-15_7.png | https://angelbc.zoom.us/webinar/register/WN_d7KosM0sRgWBvrv1RQYXIg#/registration | horiba.com |
| Tab Terminal, High Voltage DC Switching Relay | FCL Components has released the FTR-E1J 20A, a tab... | 12432 | Product Release | Tab Terminal, High Voltage DC Switching Relay | FCL Components has released the FTR-E1J 20A, a tab terminal-type high voltage DC switching relay, based on its FTR-E1 series. It is screw mounted and does not use printed circuit boards. This relay delivers 20 A / 800 V<sub>DC</sub>, 10 A / 1,000 V<sub>DC</sub> higher voltage switching with no specific polarity requirements for the connection of load terminals, and low power consumption (0.9 W at coil rated voltage). It features non-polarized contacts, making it suitable for charge and discharge circuits using FCL Components' arc suppression technology to protect its contacts. The FTR-E1J 20A is well-suited for both fuel and electric vehicle, solar, machinery, and battery applications, including electric vehicle pre-charge (HEV, PHEV, FCV, EV), PTC heaters, quick charge stations, photovoltaic power generation systems, hybrid construction machinery, battery systems, and V2H systems. This high insulation design (between coil and contacts: 5,000 V<sub>DC</sub>, between open contacts: 2,500 V<sub>DC</sub>), plastic sealed relay is RoHS compliant and uses no hydrogen gas. It measures 28.3 x 43.6 x 36.1 mm³ (excluding protrusion) and weighs approximately 85 g. | 10.06.2025 10:30:00 | Jun | news_2025-07-01_12.jpg | \images\news_2025-07-01_12.jpg | https://www.fcl-components.com/en/resources/news/press-releases/2025/20250610eu.html | fcl-components.com |
| Cooperation on Power Semiconductors for HVDC Transmission Systems | Mitsubishi Electric Corporation announced that it ... | 12426 | Industry News | Cooperation on Power Semiconductors for HVDC Transmission Systems | Mitsubishi Electric Corporation announced that it has signed a memorandum of understanding (MOU) with GE Vernova, headquartered in Cambridge, Massachusetts, USA, to strengthen their cooperation on power semiconductors for high-voltage direct-current (HVDC) transmission systems. The agreement is a result of the "Japan-US focus group to enhance collaboration on energy security and supply chain," an initiative organized by Japan's Ministry of Economy, Trade and Industry (METI) and GE Vernova to promote increased corporate collaboration between the two countries. With the signing of this memorandum, Mitsubishi Electric will provide a stable and continuous supply of IGBT power semiconductors for GE Vernova's VSC HVDC transmission systems. Through strengthened technical and strategic cooperation with GE Vernova, Mitsubishi Electric aims to leverage the expertise and strengths of both companies to support the evolution of the power grid and meet the growing demand for electricity. Going forward, Mitsubishi Electric aims to further expand its HVDC transmission systems business by increasing production capacity to meet rapidly expanding market demand. | 10.06.2025 10:00:00 | Jun | news_2025-07-01_5.png | \images\news_2025-07-01_5.png | https://www.mitsubishielectric.com/en/pr/2025/0610-b/?category=&year= | mitsubishielectric.com |
| GaN Inverter Brings GaN Power to Medium-Voltage Motor Drives | Efficient Power Conversion Corporation (EPC) relea... | 12431 | Product Release | GaN Inverter Brings GaN Power to Medium-Voltage Motor Drives | Efficient Power Conversion Corporation (EPC) released the EPC9196, a high-performance 25 A<sub>RMS</sub>, 3-phase BLDC motor drive inverter reference design powered by the EPC2304 eGaN FET. The EPC9196 is specifically designed for medium-voltage (96 V – 150 V) battery-powered motor drive applications, including steering systems in automated guided vehicles (AGVs), traction motors in compact autonomous vehicles, and precision motor joints in robotics. The EPC9196 fills a gap in the motor drive reference design landscape. According to EPC "with no other available reference designs operating at this voltage and current combination, EPC offers system designers a compact, efficient, and ready-to-deploy solution that accelerates development and optimizes system performance in the lower end of the 25 – 400 A<sub>RMS</sub> application range". At the heart of the EPC9196 is the EPC2304, a 200 V-rated, 3.5 mΩ (typical) eGaN FET in a thermally enhanced QFN package. Chosen for its low R<sub>DS(on)</sub> and unmatched performance in compact form factors, the EPC2304 enables the EPC9196 to deliver up to 35 Apk (25 A<sub>RMS</sub>) phase current at switching frequencies up to 100 kHz. This performance translates to low switching losses, minimal dead time, and a smooth, low-noise motor drive profile even at high PWM speeds. Key features of the EPC9196 include an input voltage range from 30 V to 170 V, integrated gate drivers, housekeeping power, current and voltage sense, over-current protection, and thermal monitoring as well as compatibility with multiple motor drive controller platforms from Microchip, ST, TI, and Renesas. Furthermore, the EPC9196 is dv/dt control optimized for motor drive applications (<10 V/ns) and ready for sensorless or encoder-based control configurations. | 10.06.2025 09:30:00 | Jun | news_2025-07-01_11.jpg | \images\news_2025-07-01_11.jpg | https://epc-co.com/epc/about-epc/events-and-news/news/artmid/1627/articleid/3219/high-efficiency-gan-inverter-brings-gan-power-to-medium-voltage-motor-drives | epc-co.com |
| Sales Office in Shanghai opened | Danisense has recently opened a sales office in Sh... | 12424 | Industry News | Sales Office in Shanghai opened | Danisense has recently opened a sales office in Shanghai, China to be closer to the Asian market and to be able to serve and support its growing Asian customer base locally. The office is being headed up by General Manager Siyu Yan, who benefits from more than 15 year years' experience in the electronics and Test & Measurement sector. On the picture (left to right) Henrik Elbæk, CEO of Danisense and Siyu Yan, General Manager of Danisense's Sales Office in Shanghai, shake hands to confirm and start working together. | 10.06.2025 08:00:00 | Jun | news_2025-07-01_3.jpg | \images\news_2025-07-01_3.jpg | https://danisense.com/ | danisense.com |
| High-Voltage Battery Sensor combining Shunt and Hall Effect Technologies | LEM has launched a current sensing unit for batter... | 12429 | Product Release | High-Voltage Battery Sensor combining Shunt and Hall Effect Technologies | LEM has launched a current sensing unit for battery management in electric vehicles (EVs). For the first time on the market, LEM has put together shunt and open-loop Hall effect technologies in a single part, called Hybrid Supervising Unit (HSU), to meet the challenges of small footprint, low cost and highest safety level in EV battery management systems. For higher safety levels, system engineers typically use two separate devices, a shunt to measure 2000 A and a current sensor fully isolated for measurements to 2000 A. At the BMS level, the HSU enables system developers to reach the ASIL D safety level required for EVs. The shunt's resistance is very low at 25 µΩ, and the Hall part is galvanically isolated, with accuracy of 2% at 500 A and 5% at 2000 A. Signal communication lines are separated (shunt signal and analogue or digital bus for the Hall part), and there is an NTC (Negative Temperature Compensation) signal for shunt temperature compensation. The current measuring range is up to ±2000 A at 10 s for both parts within the operating temperature range of -40 °C to +125 °C. The HSU is a plug-and-play unit. LEM initially offers the HSU00 part, with HSU01 to follow in June. The two are suitable for the two most common BDU busbar sizes: 84 x 36 x 3 mm³ (HSU00) and 84 x 20 x 3 mm³ (HSU01). | 10.06.2025 07:30:00 | Jun | news_2025-07-01_9.jpg | \images\news_2025-07-01_9.jpg | https://www.lem.com/en/battery-management-system | lem.com |
| 1200 V SiC Diodes: Manufacturing Collaboration between Indian and Taiwanese Companies | RIR Power Electronics announces the successful pro... | 12411 | Industry News | 1200 V SiC Diodes: Manufacturing Collaboration between Indian and Taiwanese Companies | RIR Power Electronics announces the successful production expansion and shipment of 1200 V SiC diodes from Taiwan. This was achieved through a strategic collaboration with a contract fab at Pro Asia Semiconductor Corporation (PASC), Taiwan and by leveraging technology IP that RIR Power had acquired from Sicamore Semi, USA. The product portfolio includes 1200 V Schottky Barrier Diodes (SBDs) ranging from 2 A to 60 A, addressing the most common ratings used across multiple applications and markets globally. Besides serving existing domestic Indian and the USA customers, shipping from Taiwan also provides improved access to strategic high-growth markets for SiC devices in the South East Asian region. RIR Power's SiC technology and portfolio are the result of a comprehensive technology transfer agreement signed with Sicamore Semi in October 2024. The agreement granted RIR Power exclusive rights to manufacture, market and commercialize SiC diodes, MOSFETs and IGBTs using Sicamore's proven IP and process know-how. Originally developed for 4-inch wafers, the technology has been successfully adapted for 6-inch wafer production. The scale-up was achieved with technical support from Vortex Semi, USA and PASC. The 1200 V SiC diodes, produced at PASC's fabrication facility in Taiwan, have been shipped to India and validated to meet global industry standards. RIR Power has already secured purchase orders from key suppliers to the commercial, industrial and defence sectors. This achievement aligns with India's Make in India initiative, reinforcing the nation's semiconductor supply chain and reducing reliance on imports for critical defence technologies. RIR Power's new SiC semiconductor facility in Odisha, is set to further enhance India's indigenous manufacturing capabilities. | 05.06.2025 11:00:00 | Jun | news_2025-06-15_6.png | \images\news_2025-06-15_6.png | https://www.ruttonsha.com/news-update/rir-power-electronics-expands-manufacturing-of-1200v-silicon-carbide-sic-diodes-in-collaboration-with-pro-asia-semiconductor-corporation-taiwan | ruttonsha.com |
| Online Calibration Portal for brand agnostic Calibration Services for Current Transducers | Danisense has introduced its 'Online Calibration P... | 12409 | Industry News | Online Calibration Portal for brand agnostic Calibration Services for Current Transducers | Danisense has introduced its 'Online Calibration Portal' to offer brand agnostic calibration services for current transducers and make the whole process as smooth and easy as possible. Via the personal online portal, which is available on the company's website, customers can book their brand agnostic calibrations for current transducers to be performed in the ISO 17025 accredited Calibration Lab from Danisense, located at the company's Taastrup headquarters in Denmark. The 'Online Calibration Portal' provides customers with regular online and email updates during the calibration process, calibration reports, detailed order tracking as well as an online payment function, etc. | 05.06.2025 09:00:00 | Jun | news_2025-06-15_4.png | \images\news_2025-06-15_4.png | https://danisense.com/news/danisense-launches-online-calibration-portal/ | danisense.com |
| Digital Multimeter Series | Rohde & Schwarz presents the R&S UDS digital multi... | 12418 | Product Release | Digital Multimeter Series | Rohde & Schwarz presents the R&S UDS digital multimeter series, which can display three measurements simultaneously and offer versatile measurement functions and various interfaces for remote control. Models are available with a digit resolution of 5 1/2 as well as 6 1/2, the latter providing a basic DC accuracy of 0.0075%. The R&S UDS series replaces the established R&S HMC8012 digital multimeter, offering more accuracy and an updated intuitive user interface. With voltage ranges extending up to 1000 V DC and 750 V AC and a current capacity of 10 A, these multimeters come with a 3.5" OVGA color display. For remote control, the new multimeters offer a variety of interfaces, including USB, IEEE-488 (GPIB) for SCPI-based commands, and LAN (Ethernet). | 03.06.2025 11:30:00 | Jun | news_2025-06-15_13.jpg | \images\news_2025-06-15_13.jpg | https://www.rohde-schwarz.com/uk/about/news-press/all-news/built-for-accuracy-designed-for-ease-introducing-the-new-r-s-uds-digital-multimeter-series-press-release-detailpage_229356-1564411.html?change_c=true | rohde-schwarz.com |
| APEC 2026: Call for Technical Sessions Digest Submissions | Texas, from March 22-26, 2026, continues the long-... | 12408 | Event News | APEC 2026: Call for Technical Sessions Digest Submissions | Texas, from March 22-26, 2026, continues the long-standing tradition of addressing issues of immediate and long-term interest to the practicing power electronics engineer. Interested authors wishing to present a paper must submit a digest for consideration by the deadline. To facilitate higher quality digest and final manuscript submissions, APEC 2026 offers significantly expanded submission windows for both the phases. Topics of interest are divided into fourteen tracks, each track with a diverse set of subtopics: AC/DC Converters, DC/DC Converters, DC/AC Inverters, Devices and Components, Magnetics, Power Electronics Integration and Manufacturing, Control, Modeling and Simulation, Motor Drives, Power Electronics for Utility Applications, Renewable Energy Systems, Wireless Power Transfer, Transportation Power Electronics, Power Electronics Applications. "APEC provides an ideal balance between academic and industrial research and is a meeting ground for these two areas, unlike any other power electronics conference," said Dhaval Dalal, APEC 2026 Program Chair. "APEC tops the list of the IEEE power electronics conferences for average paper citations - as of May 2025, 7.4 for APEC 2019 and 4.8 for APEC 2022." The Technical Sessions digest should explain the problem that will be addressed by the paper, its major results and how it is different from the closest existing literature. Technical Sessions papers presented at APEC must be original material and not have been previously presented or published. | 03.06.2025 08:00:00 | Jun | news_2025-06-15_3.png | \images\news_2025-06-15_3.png | https://apec-conf.org/speakers/ts-author-info/ | apec-conf.org |
| Power Supplies for Communications, Industrial, and Defense Applications | P-DUKE's TBF500 family of AC/DC power supplies sup... | 12428 | Product Release | Power Supplies for Communications, Industrial, and Defense Applications | P-DUKE's TBF500 family of AC/DC power supplies support a universal input voltage range from 85 to 264 VAC and are available with output voltages of 12, 15, 24, 28, 48, and 54 VDC. All members of the family offer a low 0.6 W power consumption under no-load conditions (no minimum load is required) and support up to 500 W loads with up to 93% power conversion efficiency. With 3,000 VAC reinforced insulation, TBF500 devices are presented in the form of a sealed power brick containing active semiconductor components with an integrated thermally conductive aluminum base plate. In addition to a 3-year warranty, the TBF500 PSUs are RoHS compliant, REACH compliant, and IEC/UL/EN 62368-1 safety compliant. A typical deployment involves the use of additional components, including a metal oxide varistor (MOV) to act as a fuse, resistors capacitors, and inductors to meet electromagnetic compatibility (EMC) requirements, bulk capacitors for smoothing, and other components to provide output filtering. | 01.06.2025 06:30:00 | Jun | news_2025-07-01_8.png | \images\news_2025-07-01_8.png | https://www.pduke.com/news_detail5_176.htm | pduke.com |
| Radiation-hardened GaN Transistors | Infineon announced the first of a new family of ra... | 12416 | Product Release | Radiation-hardened GaN Transistors | Infineon announced the first of a new family of radiation hardened Gallium Nitride transistors, fabricated at Infineon's own foundry, based on its CoolGan™ technology. Designed to operate in harsh space environments, it is the first in-house manufactured GaN transistor to earn the highest quality certification of reliability assigned by the United States Defense Logistics Agency (DLA) to the Joint Army Navy Space (JANS) Specification MIL-PRF-19500/794. These radiation hardened GaN HEMT devices are engineered for mission-critical applications required in on-orbit space vehicles, manned space exploration, and deep space probes. The first three product variations in this radiation-hardened GaN transistor line are 100 V / 52 A devices featuring an R<sub>DS(on)</sub> of 4 mΩ (typical) and total gate charge of 8.8 nC (typical). Encased in robust hermetically sealed ceramic surface mount packages, the transistors are Single Event Effect (SEE) hardened up to LET (GaN) = 70 MeV.cm²/mg (Au ion). Two devices, which are not JANS certified, are screened to a Total Ionizing Dose (TID) of 100 krad and 500 krad. The third device, screened to 500 krad TID, is qualified to the rigorous JANS Specification MIL-PRF-19500/794. Infineon emphasizes that it is the first company in the industry to achieve the DLA JANS certification for fully internally manufactured GaN power devices. DLA JANS certification requires rigorous levels of screening and Quality of Service Class Identifiers to ensure the performance, quality, and reliability required for space flight applications. | 29.05.2025 09:30:00 | May | news_2025-06-15_11.jpg | \images\news_2025-06-15_11.jpg | https://www.infineon.com/cms/en/about-infineon/press/market-news/2025/INFPSS202505-111.html | infineon.com |
| Flyback Transformers | Sumida announces its CEP1311F Flyback Transformers... | 12419 | Product Release | Flyback Transformers | Sumida announces its CEP1311F Flyback Transformers, designed specifically for use with "no-opto" isolated flyback circuits, such as the Analog Devices LT8304-1 reference design. This isolated flyback transformer is suited for industrial, automotive, medical, and telecom applications. The CEP1311F (13324-T083 to13324-T087) transformers have single outputs, while the CEP1311F (13324-T196) provides dual isolated outputs. This dual-output CEP1311F (13324-T196) flyback transformer is optimized for LT8304-1 applications. It enables isolated, no-opto flyback conversion with 110-V outputs and 15-V input. Custom configurations are also available. The single-output CEP1311F (13324-T083 to 13324-T087) is available in five output voltages, ranging from 3.3 V to 400 V. The dimensions are 21 mm x 21 mm x 11.8 mm, and the operating temperature range is -40 °C to 125 °C. In addition, a 1500 V<sub>rms</sub> Hi-Pot rating provides electrical isolation for enhanced safety. The transformers also boast a Moisture Sensitivity Level (MSL) of 1 for unlimited floor life under standard environmental conditions. | 28.05.2025 12:30:00 | May | news_2025-06-15_14.jpg | \images\news_2025-06-15_14.jpg | https://products.sumida.com/ProductsInfo/QuickSearch/TypeInfo.php?filterType=1&filterText=CEP1311F | sumida.com |
| Shielded Power Inductors | Bourns introduced the SRP2512CL and SRP3212CL Seri... | 12422 | Product Release | Shielded Power Inductors | Bourns introduced the SRP2512CL and SRP3212CL Series Shielded Power Inductors that are claimed to feature "low AC Resistance and low DC Resistance, delivering reduced losses and high efficiency." The components were designed to meet the latest DDR5 memory technology specifications such as those in DDR5 Power Management Integrated Circuits (PMIC) and client DDR5 modules in desktop PCs, notebooks and tablets. The devices operate in the temperature range of -40 to +125 °C, and are available with inductance ratings of up to 1.5 µH in 3030 and 2520 package sizes. | 27.05.2025 15:30:00 | May | news_2025-06-15_17.jpg | \images\news_2025-06-15_17.jpg | https://www.bourns.com/news/press-releases/pr/2025/05/27/bourns-introduces-two-shielded-power-inductor-series-developed-for-ddr5-power-management-integrated-circuits | bourns.com |
| PCIM booth raises €10,000 for a worthy cause | Vincotech staged a charity benefit at this year's ... | 12407 | Industry News | PCIM booth raises €10,000 for a worthy cause | Vincotech staged a charity benefit at this year's PCIM Europe trade fair. The company and its partners pledged a donation for every visitor who competed in a virtual reality memory game, raising 10,000 € for a Plan International Germany project in Malawi called "Education Empowers Girls!" Vincotech has made a tradition of hosting engaging charity events at the fair. Activities such as wall climbing, Sudoku, and this latest VR memory challenge – a crowd favorite – attracted hundreds of enthusiastic fairgoers. This year's proceeds go to a Plan International Germany project aiming to improve access to education and outcomes for girls in Malawi's Lilongwe and Kasungu districts. Running from October 2022 to September 2026, the initiative goes to create inclusive, supportive learning environments where girls and boys can realize their full potential. In a statement Vincotech explains why it chose this charity project: "Empowering girls through education changes lives – and not just individuals'; it transforms entire families and communities for generations to come." | 26.05.2025 07:00:00 | May | news_2025-06-15_2.jpg | \images\news_2025-06-15_2.jpg | https://www.vincotech.com/news/company-news/article/vincotech-pcim-booth-raises-eur10000-for-a-worthy-cause.html | vincotech.com |
| AI-powered Design Assistant | Frenetic Electronics announced Frenetic AI, an AI-... | 12397 | Product Release | AI-powered Design Assistant | Frenetic Electronics announced Frenetic AI, an AI-powered assistant that helps engineers design power converters. The company has also announced significant upgrades to Frenetic Magnetic Simulator, its cloud platform that allows engineers to simulate and design high-frequency inductors and transformers up to 95 % accuracy. Frenetic AI designs the converter topology based on user constraints and automatically generates electrical schematics and simulation files (LTspice, PLECS). It also suggests suitable off-the-shelf or custom magnetics. Currently available as a free basic version which has been beta-site tested, Frenetic AI will shortly be additionally offered as a PRO version is coming soon, which will include premium features such as planar transformer design, off-the-shelf component suggestions and additional design insights. Frenetic AI can integrate with Frenetic Magnetic Simulator for advanced magnetic component design, but can also be used as a standalone module. Frenetic Magnetic Simulator has also been upgraded. The original platform delivers advanced modeling of copper and core losses, the superposition of AC signals with high-frequency components and material and core selection based on the application's needs. Latest add-ons include a machine-learning-based model for calculating foil winding losses. The recent version of Frenetic Magnetic Simulator has been trained on 5,000 FEM simulations across many designs, and delivers 12 % median relative error, with millisecond response times. | 22.05.2025 07:30:00 | May | news_2025-06-01_12.png | \images\news_2025-06-01_12.png | https://www.frenetic.ai/ | frenetic.ai |
| IPCEI ME/CT CONNECT 2025 | IPCEI ME/CT CONNECT 2025, being held on June 16 in... | 12392 | Event News | IPCEI ME/CT CONNECT 2025 | IPCEI ME/CT CONNECT 2025, being held on June 16 in Grenoble, France, is a key gathering for project partners, national authorities, and Member States to highlight achievements, share updates, and build new collaborations across Europe's strategic microelectronics and communication landscape. Held in conjunction with the IPCEI on Microelectronics and Communication Technologies, this event aims to strengthen Europe's leadership in secure, sustainable, and sovereign semiconductor-based technologies. | 21.05.2025 12:00:00 | May | news_2025-06-01_7.png | \images\news_2025-06-01_7.png | https://ipcei-me-ct.eu/news/join-the-ipcei-me-ct-connect-2025/ | ipcei-me-ct.eu |
| 12 kW Power Supply Unit Reference Design for AI Data Centers | Navitas Semiconductor has announced a 12 kW power ... | 12400 | Product Release | 12 kW Power Supply Unit Reference Design for AI Data Centers | Navitas Semiconductor has announced a 12 kW power supply unit (PSU) "designed for production" reference design for hyperscale AI data centers with high-power rack densities of 120 kW achieving 97.8 % Efficiency. The 12 kW PSU complies with ORv3 specifications and OCP guidelines. It utilizes Gen-3 Fast SiC MOSFETs, an "IntelliWeave" digital platform, and high-power GaNSafe ICs configured in 3-phase interleaved TP-PFC and FB-LLC topologies. The 3-Phase interleaved totem-pole power factor correction (TP-PFC) is powered by Gen-3 Fast SiC MOSFETs with trench-assisted planar technology. IntelliWeave™ digital control provides a hybrid control strategy of both Critical Conduction Mode and Continuous Conduction Mode, for light-load to full-load conditions, ensuring maximum efficiency while maintaining a simplistic design with low component count. This results in a "30% reduction in power losses compared to existing Continuous Conduction Mode solutions". The 3-phase interleaved full-bridge LLC topology is enabled by 4<sup>th</sup> generation high-power GaNSafe™ ICs, integrating control, drive, sensing, and critical protection features that allow unprecedented reliability and robustness. GaNSafe is claimed to be "the world's safest GaN with short-circuit protection" (350 ns maximum latency), 2 kV ESD protection on all pins, elimination of negative gate drive, and programmable slew rate control. All these features are controlled with four pins, allowing the package to be treated like a discrete GaN FET, requiring no VCC pin. Suitable for applications from 1 kW to 22 kW, 650 V GaNSafe in TOLL and TOLT packages are available with a range of R<sub>DS(ON)typ.</sub> from 18 to 70 mΩ. | 21.05.2025 10:30:00 | May | news_2025-06-01_15.jpg | \images\news_2025-06-01_15.jpg | https://navitassemi.com/navitas-launches-industry-leading-12kw-gan-sic-platform-achieving-97-8-efficiency-for-hyperscale-ai-data-centers/ | navitassemi.com |
| Semiconductor Collaboration on Next Generation 800 V HVDC Architecture | Navitas Semiconductor announced a collaboration wi... | 12410 | Industry News | Semiconductor Collaboration on Next Generation 800 V HVDC Architecture | Navitas Semiconductor announced a collaboration with NVIDIA on their next-generation 800 V HVDC architecture to support 'Kyber' rack-scale systems powering their GPUs, such as Rubin Ultra, enabled by GaNFast™ and GeneSiC™ power technologies. NVIDIA's next generation of 800 V DC architecture aims to establish high-efficiency, scalable power delivery for next-generation AI workloads, to ensure greater reliability, efficiency, and reduced infrastructure complexity. Today's existing data center architecture uses traditional 54 V in-rack power distribution and is limited to a few hundred kW. As power increases above 200 kW, this architecture runs into physical limits due to power density, copper requirements, and reduced system efficiency. Modern AI data centers require gigawatts (GW) of power for the increasing demand for AI computation. Nvidia's approach is to directly convert the 13.8 kV AC grid power to 800 V HVDC at the data center perimeter using solid state transformers (SST) and industrial-grade rectifiers, eliminating several AC/DC and DC/DC conversion steps, maximizing efficiency and reliability. Due to the higher voltage level of 800 V HVDC, the thickness of copper wires can be reduced by up to 45%. The 800 V HVDC directly powers the IT racks (eliminating the need for additional AC/DC converters) and is converted by DC/DC converters to lower voltages, which will drive GPUs. NVIDIA's 800V HVDC architecture is expected to improve end-to-end power efficiency up to 5%, reduce maintenance costs by 70% (due to fewer PSU failures), and lower cooling costs by directly connecting HVDC to the IT and compute racks. | 21.05.2025 10:00:00 | May | news_2025-06-15_5.png | \images\news_2025-06-15_5.png | https://navitassemi.com/navitas-developing-next-generation-800-v-hvdc-architecture-with-nvidia/ | navitassemi.com |
| LTspice Models for ESD Products | Würth Elektronik, in cooperation with the Institut... | 12389 | Industry News | LTspice Models for ESD Products | Würth Elektronik, in cooperation with the Institute of Electronics (IFE) at Graz University of Technology, now offers an LTspice model for its TVS diodes and ESD suppressors for ESD protection, based on real measurement data using TLP (Transmission Line Pulsing). This enables the actual behavior of the components to be measured under electrostatic discharge (ESD) conditions. The ready-to-use simulation files facilitate integration into SPICE-based analyses and help shorten design cycles and time-to-market. Conventional models of components for ESD protection typically rely on simplified approximations. The new models developed by Würth Elektronik and the IFE at Graz University of Technology, based on measurement data, however, reflect the actual transient properties, including snapback behavior. The snapback effect allows the voltage to be clamped to a lower level after a transient overvoltage than is possible with standard PN diodes. This is a key aspect of ESD protection, as it reduces both the overvoltage and the resulting thermal stress on sensitive electronic components, so the ability to simulate it is a critical improvement to the development process. LTspice models for realistic modelling of real component behavior during ESD events for products from the WE-TVS and WE-VE product series are now available to download. | 21.05.2025 09:00:00 | May | news_2025-06-01_4.jpg | \images\news_2025-06-01_4.jpg | https://www.we-online.com/en/news-center/press?instance_ID=5506&d=ESD-Diodemodel | we-online.com |
| 650 V SiC MOSFETs | Toshiba Electronics Europe announces volume shipme... | 12404 | Product Release | 650 V SiC MOSFETs | Toshiba Electronics Europe announces volume shipments of its 3rd generation, 650 V silicon carbide MOSFETs in the compact DFN8x8 package for industrial equipment, the TW031V65C, TW054V65C, TW092V65C, and TW123V65C. An important characteristic of Toshiba's next-generation process is the consistently low R<sub>DS(on)</sub> temperature coefficient of the devices. The R<sub>DS(on)</sub> x gate-drain charge (Q<sub>gd</sub>) figure of merit (FoM), therefore, enables engineers to enhance the power density and efficiency of numerous high-voltage applications, including switched-mode power supplies (SMPSs), electric vehicle (EV) charging stations, uninterruptible power supplies (UPS), and photovoltaic (PV) inverters. The surface-mount DFN8x8 package reduces volume by more than 90 % compared to existing lead-inserted packages, such as TO-247 and TO-247-4L(X). Furthermore, the multi-pin device allows a Kelvin connection of its signal-source pin for the gate drive. | 20.05.2025 14:30:00 | May | news_2025-06-01_19.jpg | \images\news_2025-06-01_19.jpg | https://toshiba.semicon-storage.com/eu/company/news/2025/05/mosfet-20250520-1.html | toshiba.semicon-storage.com |
| APEC 2026: Call for Papers | APEC 2026 will take place March 22 – 26, 2026 at t... | 12388 | Event News | APEC 2026: Call for Papers | APEC 2026 will take place March 22 – 26, 2026 at the Henry B. Gonzalez Convention Center in San Antonio, Texas/USA, and now the call for Technical Session Papers has started. APEC 2026 offers an expanded window for digest and final manuscript submissions, making it easier to participate. According to the organizer, "submitting your work is a strategic investment in your professional future - contribute to the evolution of power electronics, engage with a dynamic and influential community, and make a lasting impact". According to the submission requirements engineers have to review the list of topics when planning their digest in order to ensure that the work is original, not previously published, and include evidence of completed experimental work. The principal criteria in selecting digests will be the usefulness of the work to the practicing power electronic professional. Reviewers value evidence of completed experimental work. Authors should obtain any necessary company and governmental clearance prior to submission of digests. Once Accepted, a detailed letter will be sent to all accepted submissions. The deadline for digest submissions is August 15, 2025, while final manuscripts and author registrations are due December 8, 2025. | 20.05.2025 08:00:00 | May | news_2025-06-01_3.png | \images\news_2025-06-01_3.png | https://apec-conf.org/speakers/ts-author-info/ | apec-conf.org |
| IEDM 2025 Paper Submission Deadline in July | The 71st annual IEEE International Electron Device... | 12390 | Event News | IEDM 2025 Paper Submission Deadline in July | The 71st annual IEEE International Electron Devices Meeting (IEDM) is scheduled for December 6 - 10, 2025 in San Francisco, with on-demand access to recorded content after the event. Paper submission deadline is July 10, 2025. Authors are asked to submit four-page papers electronically in IEEE Xplore-compatible PDF format and the accepted papers will be published as-is in the proceedings. Late-news papers covering the most recent, most noteworthy developments also will be accepted, with a submission deadline of August 18, 2025. IEDM 2025 will feature special Focus Sessions on "Efficient AI solutions", "Beyond Silicon: The Invisible Revolution in Thin-Film Transistors", "From P-bits to Qubits" and "Silicon Photonics for Energy Efficient AI Computing". Papers written by students as the lead author based on their own work will be considered for the Best Student Paper Award. Papers must be identified as student papers at time of submission, and the presentation must be given by the student to be eligible. The award is chosen based on both paper and presentation, and winner is announced and presented after IEDM. | 19.05.2025 10:00:00 | May | news_2025-06-01_5.jpg | \images\news_2025-06-01_5.jpg | https://www.ieee-iedm.org/ | ieee-iedm.org |
| CIPS 2026: Call for Papers | CIPS, the "International Conference on Integrated ... | 12386 | Event News | CIPS 2026: Call for Papers | CIPS, the "International Conference on Integrated Power Electronics Systems" will take place March 10-12, 2026 in Dresden/Germany, and the organizers describe the basic framework as follows: In the next decades, power electronic system development will be driven by energy saving systems, intelligent energy management, power quality, system miniaturisation and high reliability. Monolithic and hybrid system integration will comprise advanced device concepts including wide bandgap devices, new packaging technologies and the overall integration of actuators/drives (mechatronic integration). Consequently, CIPS is focused on the three main aspects: Assembly and interconnect technology for power electronic devices and converters. The second aspect is the integration of hybrid systems and mechatronic systems with high power density, and the third aspect is the systems' and components' operational behaviour, reliability and availability. Basic technologies for integrated power electronic systems as well as upcoming important applications will be presented in interdisciplinary invited papers. Experts from industry, research institutes and universities wishing to present results of their recent research are cordially invited to submit a paper by September 29, 2025. Applications are wide spread over areas such as power supplies and drives to feed all kinds of loads like consumer electronics, industrial equipment, data centres etc. Applications are e. g. from the grid or to feed electrical energy from solar or wind generators to the grid but also in the transportation sector like railway, automotive and aircraft. The organizers explicitly encourage to "submit your contribution even if you can not find the appropriate topic for your contribution. All interesting contributions are welcome!" | 19.05.2025 06:00:00 | May | news_2025-06-01_1.png | \images\news_2025-06-01_1.png | https://www.cips.eu/en | cips.eu |
| Technology Center in the "Indian Silicon Valley" | Following the establishment of a sales office in C... | 12387 | Industry News | Technology Center in the "Indian Silicon Valley" | Following the establishment of a sales office in Chennai in 2005 and the opening of a production plant in 2022, Harting has now inaugurated a technology center focusing on research and development in India. The aim is to meet the demand for advanced connector solutions in the region in a customer-oriented manner and to meet the growing requirements in the Asian market. Now, a 7,000 square metre technology center has been officially opened in Bangalore, popularly known as the "Silicon Valley of India". The goal: to offer talented individuals from the technology sector a platform to drive forward the development of connectivity solutions for various industries such as manufacturing, transport and telecommunications. Harting will also offer training and development opportunities to aspiring engineers and technology specialists. In addition to its headquarters in Chennai, Harting India has further sales offices in Bangalore, Pune and Noida. | 16.05.2025 07:00:00 | May | news_2025-06-01_2.jpg | \images\news_2025-06-01_2.jpg | https://www.harting.com/en-DE/news/harting-opens-new-technology-center-in-the-indian-silicon-valley | harting.com |
| Coupled Inductor for High-Performance Applications | Würth Elektronik introduces its WE-HCMD (High Curr... | 12405 | Product Release | Coupled Inductor for High-Performance Applications | Würth Elektronik introduces its WE-HCMD (High Current Multiphase Dual) high-current inductor, specially developed for use in TLVR (Trans-Inductor Voltage Regulator) topologies. This coil with MnZn core is characterized by its high permeability and very low RDC values allowing a high power density and efficiency. When designing power supplies for processors today, developers are confronted with increasingly high and significantly varying load transients – for example, in FPGAs used in AI applications. The innovation in TLVRs in this field calls for a new generation of components that achieve consistent efficiency even at high temperatures. The WE-HCMD family from Würth Elektronik offers coupled inductors with a coupling factor of up to 0.98 and an inductance range from 70 nH to 200 nH. The saturation current goes up to 190 A at a rated current of 78 A. The internal resistance is 0.125 mΩ. The inductor is designed for operating temperatures up to 125 °C. The family of SMT-mountable high-current inductors for TLVR applications includes four versions in a 0910 package and six in a 1111 package. | 15.05.2025 15:30:00 | May | news_2025-06-01_20.jpg | \images\news_2025-06-01_20.jpg | https://www.we-online.com/en/news-center/press?instance_ID=5506&d=WE-HCMD | we-online.com |
| Early Bird Registration for ECCE Europe 2025 is Now Open | Early Bird Registration for ECCE Europe 2025, bein... | 12395 | Event News | Early Bird Registration for ECCE Europe 2025 is Now Open | Early Bird Registration for ECCE Europe 2025, being held in Birmingham/UK from August 31 to September 4, is now open. If you're working in power electronics or energy conversion, this is your chance to connect with industry experts, researchers, and thought leaders shaping the field. Learn from renowned experts through keynote addresses, insightful tutorials, and engaging special sessions, while networking and building valuable connections with colleagues from around the world. | 15.05.2025 14:00:00 | May | news_2025-06-01_10.png | \images\news_2025-06-01_10.png | https://www.ecce-europe.org/2025/registration/rates-and-registration/ | ecce-europe.org |
| Wide Bandgap Power-electronic devices – From characterization to EMC testing | Rohde & Schwarz and dataTec invite you to xperienc... | 12393 | Event News | Wide Bandgap Power-electronic devices – From characterization to EMC testing | Rohde & Schwarz and dataTec invite you to xperience live demonstrations of how to analyze wide bandgap semiconductors using an oscilloscope and gain valuable insights into selecting the right oscilloscopes and probes. They will also demonstrate how EMC measurements and debugging can be efficiently performed with the oscilloscope, spectrum analyzer, and SCN. This seminar in Reutlingen/Germany on July 1st is aimed at users working with wide-bandgap semiconductors who are planning to purchase an oscilloscope and want to deepen their practical knowledge. | 15.05.2025 13:00:00 | May | news_2025-06-01_8.png | \images\news_2025-06-01_8.png | https://www.datatec.eu/de/en/rs-seminar | datatec.eu |
| GaN Half-Bridge Drivers | STMicroelectronics' high-voltage half-bridge gate ... | 12420 | Product Release | GaN Half-Bridge Drivers | STMicroelectronics' high-voltage half-bridge gate drivers for GaN applications dubbed STDRIVEG610 and STDRIVEG611 give designers two options to manage GaN devices in power conversion and motion applications for greater efficiency, power density and ruggedness in consumer and industrial applications. The STDRIVEG610 addresses applications requiring a fast 300 ns start-up time which is an important parameter for converter topologies like LLC or ACF ensuring accurate controlled turn-off intervals in burst mode. The STDRIVEG611 is tailored for hard switching in motion-control applications with additional protection features like high-side UVLO and smart shut down overcurrent protection. Both devices are suitable for hard-switching and soft-switching topologies with built-in interlocking to prevent cross conduction. The STDRIVEG610 elevates the performance of power adapters, chargers, and power-factor correction (PFC) circuits. The STDRIVEG611 saves space as well as boosting efficiency and reliability in drives for home appliances, pumps and compressors, industrial servo drives, and factory automation. Both devices integrate a high-side bootstrap diode as well as 6 V high-side and low-side linear regulators with a propagation delay matched to within 10 ns. Each driver has a separate sink and source path, with 2.4 A / 1.2 Ω sink and 1.0 A / 3.7 Ω source parameters. The integrated UVLO protection safeguards both the lower and upper 600 V GaN power switches. | 14.05.2025 13:30:00 | May | news_2025-06-15_15.jpg | \images\news_2025-06-15_15.jpg | https://community.st.com/t5/developer-news/latest-gan-half-bridge-drivers-for-power-conversion-and-motion/ba-p/799812 | st.com |
| Series of Gate Drive Transformers | ITG Electronics has introduced a series of gate dr... | 12396 | Product Release | Series of Gate Drive Transformers | ITG Electronics has introduced a series of gate drive transformers comprising a range of products for various needs. The company's T201213 Series of Gate Drive Transformers spans lower-current items for general applications – such as a 200 V direct current version – to products offering up to 450 V<sub>DC</sub> for higher-voltage applications. Gate drive transformers are specialized pulse transformers used to deliver high-power, fast-switching signals to the gates of power translators like IGBTs and MOSFETs, while also providing galvanic isolation. Essentially acting as barriers between power translators and controlling drive circuits, gate drive transformers are essential to applications such as power converters and motor drives for efficient and consistent switching. The T201213 Series activates or deactivates switching devices, and provides floating supply and level shifting for switching signals. The series is designed for frequencies from 20 – 300 kHz, and each gate drive transformer in the portfolio meets medical safety isolation requirements. | 14.05.2025 06:30:00 | May | news_2025-06-01_11.png | \images\news_2025-06-01_11.png | https://itg-electronics.com/en/series/779 | itg-electronics.com |
| EMC Components: Multilayer Chip Beads for 8 A | TDK Corporation has expanded its MPZ1608-PH series... | 12402 | Product Release | EMC Components: Multilayer Chip Beads for 8 A | TDK Corporation has expanded its MPZ1608-PH series of large-current multilayer chip beads for automotive and commercial power supply lines (1.6 x 0.8 x 0.6 mm³ – L x W x H). These 1608-size chip beads for power supply lines achieve a rated current of 8 A. Chip beads are used as noise suppression components in power and signal circuits. In a circuit with a current of 8 A or more, usually two or more chip beads must be used in parallel. This has the disadvantage that the current is not evenly distributed between the ferrite beads. The MPZ1608-PH series of products halves the component footprint in comparison with circuits using two conventional 1608-sized chip beads. Moreover, the components with a specified operating temperature of up to +125 °C are designed to be used in high-temperature environments like automotive and industrial equipment applications. | 13.05.2025 12:30:00 | May | news_2025-06-01_17.jpg | \images\news_2025-06-01_17.jpg | https://www.tdk.com/en/news_center/press/20250513_01.html | tdk.com |
| Semiconductor Partnership with Indian Government | Renesas has started a partnership with the Ministr... | 12391 | Industry News | Semiconductor Partnership with Indian Government | Renesas has started a partnership with the Ministry of Electronics & Information Technology (MeitY), Government of India, to support local startups and academic institutions in the field of VLSI and embedded semiconductor systems. Renesas also celebrated the expansion of its offices in Bengaluru and Noida to accommodate its growing R&D teams, with inauguration ceremonies held in May 2025. India is a key market for Renesas, offering significant growth potential and access to a highly skilled talent pool. Renesas intends to generate over 10 percent of its global revenue from the Indian market by 2030. Recent collaborations include the OSAT factory project with CG Power and Stars Microelectronics in Gujarat and the MOU with IIT Hyderabad. Renesas is also expanding its operations in India, with plans to increase its headcount to 1,000 by the end of 2025. | 13.05.2025 11:00:00 | May | news_2025-06-01_6.JPG | \images\news_2025-06-01_6.JPG | https://www.renesas.com/en/about/newsroom/renesas-partners-indian-government-drive-innovation-through-startups-and-industry-academia | renesas.com |
| SMD Fuse with 1500 A Interrupting Rating | Littelfuse launched the Nano²<sup>®</sup>... | 12417 | Product Release | SMD Fuse with 1500 A Interrupting Rating | Littelfuse launched the Nano²<sup>®</sup> 415 SMD Series Fuse, the first surface-mount fuse from Littelfuse with a 1500 A interrupting rating at 277 V. Designed to provide true buffering for 250 V applications with unpredictable voltage fluctuations, the 415 Series offers fault current protection in a compact SMD package, making it ideal for space-constrained applications. The Nano² 415 SMD Series is well-suited for a range of applications, including consumer electronics like power adapters, chargers, and power supplies, industrial systems like inverters, converters, and instrumentation, automotive like EV charging stations, home chargers, and lighting, appliances/white goods like washers, dryers, and refrigerators as well as home automation like automated garage doors and smart home systems. | 13.05.2025 10:30:00 | May | news_2025-06-15_12.png | \images\news_2025-06-15_12.png | https://www.littelfuse.com/company/news-and-events/in-the-news/newspages-articles/press-releases/2025/littelfuse-introduces-industry-first-nano2-415-smd-fuse-with-1500a-interrupting-rating-at-277v | littelfuse.com |
| Multiphase Power Controller | Alpha and Omega Semiconductor (AOS) announced its ... | 12414 | Product Release | Multiphase Power Controller | Alpha and Omega Semiconductor (AOS) announced its AOZ98252QI 2-output, 8-phase controller with 2.5 mA quiescent power. Featuring AMD SVI3 high-speed and SMBus digital interfaces, the AOZ98252QI is engineered as a key component in a complete system power solution with AOS' DrMOS products for graphics and desktop systems. The AOZ98252QI digital controller provides two output rails in flexible 8+0 to 4+4 GFX/SOC and Vcore/SOC output rails. Using the A²TM (Advanced Transient Modulator) feature, designers can achieve fast response times and adequate current balance for transient and DC loads. The device is shipped in a QFN 6x6-52L package. | 13.05.2025 07:30:00 | May | news_2025-06-15_9.jpg | \images\news_2025-06-15_9.jpg | https://www.aosmd.com/news/alpha-and-omega-semiconductor-introduces-amd-svi3-multiphase-controller-low-quiescent-power | aosmd.com |
| Collaboration to support Battery Energy Storage System Platform | Arrow Electronics, in collaboration with Prime Bat... | 12406 | Industry News | Collaboration to support Battery Energy Storage System Platform | Arrow Electronics, in collaboration with Prime Batteries and NXP Semiconductors, is launching a next-generation Battery Energy Storage System (BESS) platform. Prime Batteries developed this solution with support from Arrow and NXP to advance energy industry and energy-saving technologies, addressing the increasing global demand for greater efficiency. By leveraging their combined strengths, the companies aim to establish new benchmarks in energy-saving technology and make a substantial impact across industries. According to Arrow the solution complies with the latest European safety regulations and "achieves unprecedented levels of energy storage capacity, making it ideal for a variety of BESS applications". The platform's versatility allows it to cater to different customer needs, with adjustable voltage and current parameters. It supports high voltages up to 1500 V, in-line with current market trends for high-power equipment, and meets rigorous safety standards for critical applications, including ISO 26262, with the potential for ASIL D certification, if necessary. The system features multiple protection layers and continuous, independent cell monitoring. Designed with scalability and upgradability in mind, the BESS can meet the changing requirements of customers. Its low maintenance needs and optimized operating conditions extend its lifespan, thereby reducing the total cost of ownership. In this context NXP's 1500 V Battery Energy Storage System provides a modular and scalable reference design for utility, commercial, industrial and residential high-voltage applications. | 13.05.2025 06:00:00 | May | news_2025-06-15_1.jpg | \images\news_2025-06-15_1.jpg | https://news.fiveyearsout.com/news-releases/news-details/2025/Arrow-Electronics-and-NXP-Semiconductors-Collaborate-to-Support-Prime-Batteries-Advanced-Battery-Energy-Storage-System-Platform/default.aspx | arrow.com |
| Collaboration on Power Conversion Systems for Electric Vehicles | Infineon Technologies and Visteon announced the co... | 12375 | Industry News | Collaboration on Power Conversion Systems for Electric Vehicles | Infineon Technologies and Visteon announced the companies have signed a Memorandum of Understanding (MOU) to advance the development of next-generation electric vehicle powertrains. In this joint effort, Infineon and Visteon will collaborate and integrate power conversion devices based on Infineon semiconductors, with particular emphasis on wideband gap device technologies, which provide significant advantages in power conversion applications compared to silicon-based semiconductors. These devices include greater power density, efficiency and thermal performance, which contribute to improved efficiency and reduced system costs for next-generation power conversion modules for the automotive sector. Future Visteon EV powertrain applications incorporating Infineon CoolGaN™ (Gallium Nitride) and CoolSiC™ (Silicon Carbide) devices may include battery junction boxes, DC-DC converters and on-board chargers. The resulting powertrain systems will conform to the highest efficiency, robustness and reliability. "Working with Infineon allows us to integrate cutting-edge semiconductor technologies that are essential in improving power conversion efficiency and overall system capability of next generation electric vehicles," said Dr. Tao Wang, Head of the Electrification Product Line of Visteon Corporation. "This collaboration will advance technologies that accelerate the transition to a more sustainable and efficient mobility ecosystem." | 09.05.2025 11:00:00 | May | news_2025-05-15_6.jpg | \images\news_2025-05-15_6.jpg | https://www.visteon.com/investors/investor-news/news-details/2025/Infineon-and-Visteon-Collaborate-on-Advanced-Power-Conversion-Systems-for-Next-Generation-Electric-Vehicles-2025-5Dbe3Pylmd/default.aspx | visteon.com |
| German Government issues final Funding Approval for new Smart Power Fab in Dresden | Infineon Technologies has received final approval ... | 12373 | Industry News | German Government issues final Funding Approval for new Smart Power Fab in Dresden | Infineon Technologies has received final approval for the funding of its new plant in Dresden (Smart Power Fab) from the German Federal Ministry for Economic Affairs. Infineon is expanding the site in order to meet customer demand for example for renewable energies, efficient data centers and electromobility. Infineon will invest five billion euros of its own money, creating as many as 1,000 new jobs. This figure does not include additional jobs which will be generated in the investment's ecosystem: Experts expect a positive job effect of 1:6 (Source: ZVEI-Studie). In addition, Infineon is also investing in Dresden through its participation in the joint venture "European Semiconductor Manufacturing Company (ESMC) GmbH". Infineon's Smart Power Fab not only helps strengthen European supply chains in the microelectronics sector, it also further solidifies the position of Dresden and Silicon Saxony as Europe's largest semiconductor hub. The European Commission approved the funding by the German federal government. The Smart Power Fab is being supported by both the European Chips Act and the IPCEI ME/CT innovation program ("Important Project of Common European Interest on Microelectronics and Communication Technologies"). Overall funding for the site from these sources totals approximately one billion euros. Construction of the Smart Power Fab, currently one of Germany's largest building projects, is proceeding as planned, with the building shell currently nearing completion. Infineon held a topping-out ceremony together with all those involved in construction activities in early April this year. Production is to begin in 2026. | 08.05.2025 09:00:00 | May | news_2025-05-15_4.jpg | \images\news_2025-05-15_4.jpg | https://www.infineon.com/cms/en/about-infineon/press/press-releases/2025/INFXX202505-100.html | infineon.com |
| Test Generator for up to 2 kA | The Microtest Group introduced the M2 DS5 Quasar, ... | 12398 | Product Release | Test Generator for up to 2 kA | The Microtest Group introduced the M2 DS5 Quasar, "the smallest 2 kA low inductance dynamic switch test generator, for the test of all types of products on one platform". The tester is suited for high-volume semiconductor production. The M2 DS5 Quasar is designed to test power chips, and the latest WBG (Wide-bandgap) devices made from Silicon Carbide and Gallium Nitride, materials commonly found in consumer power supplies, electric vehicles including trains and battery electric hybrid, industrial motors, HVAC systems and many other applications in the green energy, automotive, power markets, as well as rad-hard (radiation-hardened) devices for space and defence. The tester was developed by the UK subsidiary ipTEST. It is eight times more efficient in overcurrent protection, with a typical response time of under 300 ns. The parasitic inductance has also been reduced by 85 % to 30 nH. | 08.05.2025 08:30:00 | May | news_2025-06-01_13.png | \images\news_2025-06-01_13.png | https://www.microtest.net/microelectronics-microtest-group-launches-a-one-platform-test-generator-suitable-for-rad-hard-devices/ | microtest.net |
| Gallium: From Mining towards the Fab | Indium Corporation and Rio Tinto have successfully... | 12394 | Industry News | Gallium: From Mining towards the Fab | Indium Corporation and Rio Tinto have successfully extracted gallium from feed sourced at Rio Tinto's Vaudreuil alumina refinery in Saguenay, Quebec/Canada. This collaboration is a step in building a more robust global supply chain for gallium. A strategic North American supply will accelerate the development of the project towards commercialization of gallium-based technologies. Indium Corporation designed and developed this gallium extraction process in the United States at its research and development facility in Rome, New York state. Indium Corporation works towards establishing a 3.5-ton demonstration plant which would be located in Saguenay, Quebec, which might then eventually complemented by a commercial-scale capacity of 40 tons annually, addressing an estimated five to 10 percent of global gallium supply. | 07.05.2025 15:00:00 | May | news_2025-06-01_9.jpg | \images\news_2025-06-01_9.jpg | https://www.indium.com/blog/indium-corporation-and-rio-tinto-announce-groundbreaking-milestone-in-gallium-extraction-partnership/ | indium.com |
| "The world's lowest Temperature 65-70 W USB-C Modules for installed Applications" | Pulsive released of a series of 65 W-70 W USB-C mo... | 12384 | Product Release | "The world's lowest Temperature 65-70 W USB-C Modules for installed Applications" | Pulsive released of a series of 65 W-70 W USB-C modules. Aimed at installed applications such as wall sockets, desks, and furniture, these fully assembled modules achieve "the world's lowest operating temperature of just 32 °C above ambient with an industry leading efficiency of 97.34 %". USB-C charging in wall sockets, desks, and furniture typically offer power levels of 15-30 W and often struggle to handle multiple devices and/or fast charging. Limitations on physical size and natural airflow cause higher power solutions at 45 W-65 W to reach temperature levels in excess of 80 °C above ambient causing the power supply to either reduce the power to 15 W, or in many cases, cut off altogether. Pulsiv's fully assembled USB-C modules have solved all the challenges relating to heat, size and safety, making it "the only suitable solution for installed applications". It combines Pulsiv OSMIUM optimized PFC technology with an industry standard QR flyback to safely deliver 65 W or 70 W (MacBook compatible). Available in a compact cube or flat module form factor, this GaN-optimised design can operate continuously for more than 8 hours at 100 % load and never exceed 32 °C above ambient. Furthermore, due to its switching method, there is zero inrush current – eliminating the problems caused by power outages where multiple USB-C wall sockets have been installed in a single location. The dimensions of the module, which is switched at 125 kHz, are 36 mm x 36 mm x 40 mm (cube) or 55 mm x 37 mm x 25 mm (flat). | 06.05.2025 14:30:00 | May | news_2025-05-15_15.jpg | \images\news_2025-05-15_15.jpg | https://www.pulsiv.com/ | pulsiv.com |
| GaN-based 2.5 kW Totem Pole PFC Case Study | Cambridge GaN Devices (CGD) announced that Inventc... | 12383 | Product Release | GaN-based 2.5 kW Totem Pole PFC Case Study | Cambridge GaN Devices (CGD) announced that Inventchip has successfully demo'd a 2.5 kW GaN-based CCM totem-pole PFC reference design using CGD's ICeGaN® gallium nitride ICs. A key feature is ease-of use. ICeGaN ICs integrate interface circuitry and protection on the same GaN die as the HEMT. Therefore, any standard driver IC can be used. The Inventchip IVCC1104 totem pole PFC controller IC does not require any programming. It offers AC zero-crossing control and robustness against AC disturbance. Inventchip had an existing 2.5 kW TPPFC reference design based on its controller and gate drivers using SiC MOSFETs in TO-247 packages. To evaluate the performance of GaN instead, Inventchip designed a TO-247 adapter board using CGD's P2 25 mΩ ICeGaN ICs and the ICeGaN design works without any modification of their circuits. Soon, EV inverter drives of over 100 kW are expected to transition to GaN too. | 06.05.2025 13:30:00 | May | news_2025-05-15_14.JPG | \images\news_2025-05-15_14.JPG | https://www.camgandevices.com/en/p/2.5kw-totem-pole-pfc-case-study-demos-icegan-ease-of-use-and-robustness-at-higher-power | camgandevices.com |
| 1700 V Switcher IC for 800 V BEVs | Power Integrations announced five new reference de... | 12403 | Product Release | 1700 V Switcher IC for 800 V BEVs | Power Integrations announced five new reference designs targeting 800 V automotive applications based on the company's 1700 V InnoSwitch™3-AQ flyback switcher ICs. Spanning power levels from 16 W to 120 W, the designs leverage both wound and low-profile planar transformers and target automotive applications such as DC/DC bus conversion, inverter emergency power, battery management and power supplies for auxiliary systems. The designs feature Power Integrations' wide-creepage InSOP™-28G package, which supports 1000 V<sub>DC</sub> on the primary side while providing appropriate creepage and clearance between pins in pollution degree 2 environments. Power consumption is less than 15 mW at no-load. The ICs also incorporate synchronous rectification and a valley switching, discontinuous/continuous conduction mode (DCM/CCM) flyback controller capable of delivering greater than 91 % efficiency. The company provides three reference designs, which are all isolated flyback converters based on the 1700 V-rated CV/CC InnoSwitch3-AQ switcher ICs. The three reference designs kits (RDKs) and two design example reports (DERs) are RDK-994Q (35 W ultra-low-profile traction inverter gate-drive or emergency power supply with 40-1000 V<sub>DC</sub> input and 24 V output), RDK-1039Q (18 W power supply with planar transformer for traction inverter gate driver or emergency power supply), RDK-1054Q (120 W power supply with planar transformer, designed to shrink or eliminate heavy, bulky 12 V batteries), DER-1030Q (20 W four-output power supply) and DER-1045Q (16 W four-output power supply). | 06.05.2025 13:30:00 | May | news_2025-06-01_18.jpg | \images\news_2025-06-01_18.jpg | https://investors.power.com/news/news-details/2025/Power-Integrations-1700-V-Switcher-IC-Delivers-Reliability-and-Space-Saving-Benefits-in-800-V-BEVs/default.aspx | power.com |
| 1200 V SiC MOSFET with Top-Side Cooling and Isolated Thermal Path | SemiQ has announced the expansion of its Gen3 SiC ... | 12382 | Product Release | 1200 V SiC MOSFET with Top-Side Cooling and Isolated Thermal Path | SemiQ has announced the expansion of its Gen3 SiC MOSFET offering, launching a 1200 V TSPAK-packaged series. The four-strong series of Gen3 MOSFETs delivers continuous drain currents of between 27 and 101 A and pulsed drain current from 70 to 350 A, with device resistances R<sub>DS(on)</sub> ranging from 80 to 16 mΩ, respectively. All devices are operational to 175 °C and have been tested to voltages greater than 1400 V, undergoing wafer-level burn-in testing (WLBI) and UIL avalanche testing up to 800 mJ (R<sub>DS(on)</sub> = 16 mΩ, 160 mJ for the 80 mΩ device). The devices can be used in parallel and implement top-side cooling as well as an isolated thermal path with a ceramic isolated back paddle. The package includes a driver source kelvin pin for gate driving as well as a gate pin, 5 source pins and a drain tab. The TSPAK MOSFETs offer a lower capacitance, reduced switching losses, longer clearance distance and higher overall system efficiency. SemiQ is targeting the devices at a range of industrial and EV applications, including solar inverters and energy storage, induction heating and welding, EV charging stations and on-board chargers, motor drives, high-voltage DC/DC converters and UPS/switch mode power supplies. All devices in the series are housed in a 18.6 x 14.0 x 3.5 mm³ TSPAK package, have a zero gate voltage drain current of 0.1 µA, a -10/10 nA gate-source leakage current and a 3.5 V gate threshold voltage (cited characteristics measured at 25 °C). The series' cycle times range from 49 ns (80 mΩ MOSFET) to 114 ns (16 mΩ), and the devices have total switching energy of between 153 µJ (80 mΩ MOSFET) and 1565 µJ (16 mΩ). | 06.05.2025 12:30:00 | May | news_2025-05-15_13.jpg | \images\news_2025-05-15_13.jpg | https://semiq.com/ | semiq.com |
| 40 V GaN Power Transistor targets Low-Voltage Silicon Strongholds | Efficient Power Conversion (EPC) announces the ava... | 12381 | Product Release | 40 V GaN Power Transistor targets Low-Voltage Silicon Strongholds | Efficient Power Conversion (EPC) announces the availability of the EPC2366, a 40 V, 0.8 mΩ device designed to displace legacy low-voltage silicon MOSFETs in demanding applications such as high-performance DC/DC converters and synchronous rectifiers. With an R<sub>DS(on)</sub> x Q<sub>G</sub> figure of merit (10 mΩ·nC), zero reverse recovery, and its thermal performance, the EPC2366 delivers higher efficiency, faster switching, and greater power density than a comparable silicon-based solution. The device is integrated in a 3.3 mm x 2.6 mm PQFN package. The EPC2366 enables higher frequency operation and reduced system size for high density 48 V converters in AI servers and datacom, high frequency synchronous rectifiers, and 24 V battery powered motor drives. | 06.05.2025 11:30:00 | May | news_2025-05-15_12.jpg | \images\news_2025-05-15_12.jpg | https://epc-co.com/epc/about-epc/events-and-news/news/artmid/1627/articleid/3213/new-40-v-gan-power-transistor-from-epc-targets-low-voltage-silicon-strongholds | epc-co.com |
| Enhanced Thermal Performance Package Technology | WeEn Semiconductors has introduced SiC MOSFETs and... | 12401 | Product Release | Enhanced Thermal Performance Package Technology | WeEn Semiconductors has introduced SiC MOSFETs and Schottky Barrier Diodes (SBDs) in thermally efficient TSPAK packages. These packages will enable engineers to improve efficiency, reduce form factors, extend reliability and lower EMI across a variety of high-power applications. Providing effective heat dissipation from a thermal pad on the surface of the SiC device rather than via a PCB substrate, the company's top-side cooling TSPAK technologies can reduce J-A (junction-to-ambient) thermal resistance by up to 16 % compared to conventional devices. As a result, the packages help to simplify thermal management design, lower losses and increase power density. EMI reduction derives from the fact that the circulating current that creates the magnetic field is no longer blocked by the thermal vias necessary in conventional bottom-side cooling designs and can return to the source directly, minimizing magnetic interference. WeEn's TSPAK SiC technologies are suited to on-board chargers and high-voltage-to-low-voltage DC/DC converters in electric vehicles, automotive HVAC compressors, vehicle charging stations, photovoltaic renewable energy systems and power supplies for computing and telecom servers. TSPAK MOSFETs offer voltage ratings from 650 V to 1700 V and on resistance ratings from 20 to 150 mΩ. TSPAK SBDs are available with voltages from 650 V to 1200 V and current ratings of 10 A to 40 A. | 06.05.2025 11:30:00 | May | news_2025-06-01_16.jpg | \images\news_2025-06-01_16.jpg | https://www.ween-semi.com/en | ween-semi.com |
| Self-Biasing GaN Flyback Converter | Texas Instruments now offers a 65 W dual-port USB ... | 12380 | Product Release | Self-Biasing GaN Flyback Converter | Texas Instruments now offers a 65 W dual-port USB PD charger with self-biasing GaN flyback: The UCG28826 is claimed to be "the industry's first self-biasing GaN flyback converter". Designed for next-generation fast-charging applications, the UCG28826 converter delivers 65 W across 90 V<sub>AC</sub> to 264 V<sub>AC</sub> in this reference design, enabling engineers to meet strict efficiency standards, minimize standby power consumption and increase power density. | 06.05.2025 10:30:00 | May | news_2025-05-15_11.jpg | \images\news_2025-05-15_11.jpg | https://www.ti.com/about-ti/newsroom/news-releases/2025/ti-advances-power-density-and-efficiency-at-pcim-2025.html | ti.com |
| Power Switch Architecture for 10 MW and more | Menlo Microsystems has announced a scalable power ... | 12379 | Product Release | Power Switch Architecture for 10 MW and more | Menlo Microsystems has announced a scalable power switching architecture that enables its Ideal Switch® to be deployed in advanced power distribution and control systems to 10 MW and beyond. The demonstration system, which was shown at PCIM, is based on the MM9200, a 300 V, 10 A MEMS switch. It utilizes Menlo's Ideal Switch technology to provide an ultra-low on-resistance, metal-on-metal contact to eliminate wasted power. The MM9200 is a high-power SPST micro-electromechanical relay that is smaller, more efficient and has higher performance than equivalent solid-state relay (SSR) and electro-mechanical relay (EMR) alternatives. Arrays of MM9200 switches are configured for microsecond speed protection in 1000 V / 125 A modules. Four modules are combined into hot-swapable systems, and multiple systems are deployed in parallel to scale to accommodate higher power requirements. Unlike other solutions, the negligible power dissipation of the Ideal Switch removes the need for design compromises to accommodate heat management while simultaneously enabling power management and control systems to be constructed in a fraction of the space. | 06.05.2025 09:30:00 | May | news_2025-05-15_10.jpg | \images\news_2025-05-15_10.jpg | https://menlomicro.com/ | menlomicro.com |
| SiC Superjunction Technology | Infineon Technologies has introduced a trench-base... | 12399 | Product Release | SiC Superjunction Technology | Infineon Technologies has introduced a trench-based SiC superjunction (TSJ) technology concept. This expansion will encompass a diverse range of package types, including discretes, molded and frame-based modules, as well as bare dies – for a broad spectrum of applications, targeting both the automotive and industrial sectors. The first products based on the new technology will be 1200 V in Infineon ID-PAK for automotive traction inverters and combine the advantages of trench technology and superjunction design. This scalable package platform supports power levels of up to 800 kW, enabling system flexibility. Key benefits of the technology include increased power density, achieved through an up to 40 percent improvement in R<sub>DS(on)</sub>* A, allowing for more compact designs within a given power class. Additionally, the 1200 V SiC trench-superjunction concept in ID-PAK enables up to 25 percent higher current capability in main inverters without compromising short-circuit capability. As an early customer, Hyundai Motor Company development teams will use the trench-superjunction technology in electrical vehicle drivetrains. | 06.05.2025 09:30:00 | May | news_2025-06-01_14.jpg | \images\news_2025-06-01_14.jpg | https://www.infineon.com/cms/en/about-infineon/press/market-news/2025/INFGIP202505-097.html | infineon.com |
| General-Purpose Power Supplies Series | TDK has introduced the TDK-Lambda brand GUS350 ser... | 12413 | Product Release | General-Purpose Power Supplies Series | TDK has introduced the TDK-Lambda brand GUS350 series of compact, single output general-purpose power supplies. The models are rated at 350 W with 12, 24, 36 and 48 V outputs. The GUS350 is convection-cooled and is available with output voltage adjustment function, remote on-off, and DIN-rail mounting bracket options. The GUS350 series provides an alternative source of power for manufacturers who require a higher grade of construction. The GUS350 models measure 101.6 x 41 x 127 mm³ (W x H x D) and have an operating temperature from -20 to +70 °C, with a three-year warranty. Efficiencies are up to 95.5%. Safety certifications include IEC/EN/UL/CSA62368-1 (compliant to IEC61010-1) as well as CE and UKCA marking for the Low Voltage, EMC and RoHS Directives. The units also comply with EN 55011-B and EN 55032-B conducted and radiated emissions standards and meet EN 61000-3-2 harmonics and IEC 61000-4 immunity standards. The GUS350 series meets IEC 62477-1 (OVC III) and has input-to-output isolation of 2,000 V<sub>DC</sub>, input-to-ground 3,000 V<sub>DC</sub>, and output-to-ground 500 V<sub>DC</sub>. Main applications are light industrial, automation, ATE test systems, LED lighting and broadcast. | 06.05.2025 06:30:00 | May | news_2025-06-15_8.jpg | \images\news_2025-06-15_8.jpg | https://www.emea.lambda.tdk.com/uk/news/article/20847 | lambda.tdk.com |
| Joint Development of Traction SiC Inverters for E-Mobility | Cissoid and EDAG Group have started a strategic pa... | 12370 | Industry News | Joint Development of Traction SiC Inverters for E-Mobility | Cissoid and EDAG Group have started a strategic partnership aimed at accelerating the development of next-generation Silicon Carbide traction inverters for electric mobility applications. This collaboration brings together Cissoid's expertise in SiC power semiconductor modules and control solutions with EDAG's engineering know-how in the design, integration, and validation of electric powertrains. By combining their complementary strengths, the two companies aim to offer e-mobility OEMs and equipment suppliers "unmatched technical support and complete solutions for the efficient, reliable, and functionally safe development of SiC-based traction inverters". Special emphasis will be set to "comprehensive engineering services covering inverter system design, thermal management, mechanical integration, functional safety and EMC compliance" in order to enable "accelerated time-to-market through access to ready-to-implement, proven hardware and software solutions". All this is planned to be with "end-to-end technical support, from concept design to prototyping and vehicle integration". | 06.05.2025 06:00:00 | May | news_2025-05-15_1.jpg | \images\news_2025-05-15_1.jpg | https://www.cissoid.com/news/cissoid-edag-group-join-forces-to-support-the-development-of-sic-inverters-32 | cissoid.com |
| Inverter Control Modules achieve ISO26262 ASIL-C Ready Certification | Cissoid announced that its CxT-ICM3S series of Inv... | 12415 | Product Release | Inverter Control Modules achieve ISO26262 ASIL-C Ready Certification | Cissoid announced that its CxT-ICM3S series of Inverter Control Modules (ICMs) have been successfully certified by SGS-TÜV Saar for functional safety, achieving ISO26262 ASIL-C Ready status. This certification underscores Cissoid's commitment to delivering unique, functionally safe and highly customizable solutions that bridge the gap between discrete hardware components and off-the-shelf inverters, enabling optimized power electronics design for electric vehicles and industrial applications. These ICMs are pre-qualified, functionally safe solution that combines the efficiency of off-the-shelf systems with the customizability of discrete hardware components. This best-of-both-worlds approach enables manufacturers to tailor their inverter designs to specific voltage, power, and motor control requirements - accelerating development while ensuring safety and performance. They offer hardware and software flexibility to adapt to specific motor, voltage, and power requirements. For example, the CXT-ICM3SA Series of 3-Phase SiC ICMs provides field-proven inverter control technology with customizable hardware interfaces allowing developers to fine-tune their inverters to maximize efficiency and reliability while ensuring compliance with strict safety standards. | 05.05.2025 08:30:00 | May | news_2025-06-15_10.jpg | \images\news_2025-06-15_10.jpg | https://www.cissoid.com/news/cissoids-inverter-control-modules-achieve-iso26262-asil-c-ready-certification-33 | cissoid.com |
| JFET Technology for smarter and faster Solid-State Power Distribution | To enable the next generation of solid-state power... | 12378 | Product Release | JFET Technology for smarter and faster Solid-State Power Distribution | To enable the next generation of solid-state power distribution systems, Infineon introduced its CoolSiC™ JFET product family. These devices deliver minimized conduction losses, solid turn-off capability, and high robustness, making them well-suited for solid-state protection and distribution. With robust short-circuit capability, thermal stability in linear mode, and overvoltage control, CoolSiC JFETs can be used in a wide range of industrial and automotive applications, including solid-state circuit breakers (SSCBs), AI data center hot-swaps, eFuses, motor soft starters, industrial safety relays, and automotive battery disconnect switches. The first generation of CoolSiC JFETs features an R<sub>DS(ON)</sub> starting at 1.5 mΩ (750 V <sub>BDss</sub>) and 2.3 mΩ (1200 V <sub>BDss</sub>), significantly reducing conduction losses. The bulk-channel optimized SiC JFET offers high robustness under short-circuit and avalanche failure conditions. Housed in a Q-DPAK top-side cooled package, the devices support paralleling and scalable current handling, enabling high-power systems with several layout and integration options. Their predictable switching behavior under thermal stress, overload and fault conditions increases long-term reliability in continuous operation. To meet the thermal and mechanical challenges of harsh application environments, CoolSiC JFETs leverage Infineon's.XT interconnection technology with diffusion soldering. This improves transient thermal impedance and robustness under pulsed and cyclic loads typical of industrial power systems. Tested and qualified under real-world operating conditions of solid-state power switches and based on the industry-standard Q-DPAK package, the devices enable quick and seamless design integration in both industrial and automotive applications. | 05.05.2025 08:30:00 | May | news_2025-05-15_9.jpg | \images\news_2025-05-15_9.jpg | https://www.infineon.com/cms/en/about-infineon/press/market-news/2025/INFGIP202505-096.html | infineon.com |
| Automotive-qualified 1200 V SiC MOSFETs in D²PAK-7 Packaging | Nexperia announced a range of efficient and robust... | 12377 | Product Release | Automotive-qualified 1200 V SiC MOSFETs in D²PAK-7 Packaging | Nexperia announced a range of efficient and robust automotive-qualified silicon carbide MOSFETs with R<sub>DS(on)</sub> values of 30, 40 and 60 mΩ. These devices (NSF030120D7A0-Q, NSF040120D7A1-Q, NSF060120D7A0-Q) were previously offered in industrial grade and have now been awarded AEC-Q101 certification. This makes them suitable for automotive applications like onboard chargers (OBC) and traction inverters in electric vehicles (EV) as well as for DC/DC converters, heating ventilation and air-conditioning systems (HVAC). These switches are housed in the increasingly popular surface mounted D²PAK-7 package, which is more suitable for automated assembly operations than through-hole devices. Concentrating on the nominal R<sub>DS(on)</sub> value neglects the fact that it can increase by more than 100 % as device operating temperatures rise, resulting in considerable rise of conduction losses. The temperature stability is even more critical when SMD package technologies are used compared to through-hole technology since devices are cooled through the PCB. Nexperia identified this as a limiting factor in the performance of many currently available SiC devices and focused the temperature stability of its SiC MOSFETs, with the nominal value of R<sub>DS(on)</sub> increasing by 38 % over an operating temperature range from 25 °C to 175 °C. This feature enables engineers to address higher output power in their applications achieved with a higher nominal 25 °C rated R<sub>DS(on)</sub> without sacrificing performance. Nexperia is planning to release automotive-qualified versions of its 17 mΩ and 80 mΩ R<sub>DS(on)</sub> SiC MOSFETs in 2025. | 05.05.2025 07:30:00 | May | news_2025-05-15_8.jpg | \images\news_2025-05-15_8.jpg | https://www.nexperia.com/about/news-events/press-releases/nexperia-launches-industry-leading-automotive-qualified-1200-v-silicon-carbide-mosfets-in-d2pak-7-packaging | nexperia.com |
| Proof of Concept for integrating Current Sensor into Power Module | Asahi Kasei Microdevices (AKM) and Silicon Austria... | 12371 | Industry News | Proof of Concept for integrating Current Sensor into Power Module | Asahi Kasei Microdevices (AKM) and Silicon Austria Labs (SAL) have successfully completed a joint proof of concept for integrating a current sensor into a power module to be used in automotive applications such as traction inverters and DC/DC converters. This technology enables energy efficiency, as well as compact and lightweight design for ultra-high current applications using next-generation SiC power devices. AKM is developing the EZ232L, a linear Hall IC for coreless current sensors. With its resolution and accuracy, this technology is said to enhance the efficiency of traction inverters that require operation over a wide current range. AKM collaborated with the Austrian research center SAL to conduct a joint technical verification, using EZ232L to develop a power module that integrates a current sensor in order to address the limitations of conventional magnetic core-based current sensing. | 02.05.2025 07:00:00 | May | news_2025-05-15_2.jpg | \images\news_2025-05-15_2.jpg | https://www.akm.com/global/en/about-us/news/2025/20250502-sal-powermodule/ | akm.com |
| AC/DC Power Supplies delivering 20 W | In new energy applications, AC/DC power supplies i... | 12421 | Product Release | AC/DC Power Supplies delivering 20 W | In new energy applications, AC/DC power supplies increasingly must operate over nominal supply values from 100 V<sub>AC</sub> to 277 V<sub>AC</sub>. The recently launched RAC20NE-K/277 from Recom matches this with 20 W available at optional 12, 24, or 36 V<sub>DC</sub> outputs. Encapsulated versions are available with constant voltage or constant current limiting characteristics and a constant voltage open frame type with 12 or 24 V<sub>DC</sub> output. The RAC20NE-K/277 series allows reliable operation at full load to 60 °C ambient, and to 85 °C with derating. The parts are Class II insulated, OVC III rated to 3000 m altitude (OVC II/5000m) and meet EN 55032 'Class B' EMC requirements with a floating or grounded output. Standby and no-load power dissipation meet Eco-design requirements. The RAC20NE-K/277 board-mount, encapsulated parts are sized 52.5 mm x 27.6 mm x 23.0 mm while the open frame parts with Molex connections measure 80.0 mm x 23.8 mm x 22.5 mm. | 01.05.2025 14:30:00 | May | news_2025-06-15_16.jpg | \images\news_2025-06-15_16.jpg | https://recom-power.com/en/company/newsroom/rec-n-versatile-ac!sdc-power-supplies-deliver-20w-in-small-form-factor-406.html?3 | recom-power.com |
| Family of Current Sensors | LEM adds two members to its IN family of current s... | 12385 | Product Release | Family of Current Sensors | LEM adds two members to its IN family of current sensors, suitable for a range of demanding systems. The IN 1500-S current sensor is specifically designed for high performance and precision in 1500 A nominal current applications, while the IN 1000-SHF current sensor is suitable for applications requiring very wide bandwidth. The devices are intended for applications such as MRI, calibration units, power meters, and energy measurement. With IN 1500-S, the IN family for current sensing now boasts eight devices, and it is LEM's most advanced high-precision range of current sensors yet, underpinned by LEM's closed-loop current transducers that use a highly-accurate zero-flux detectors based on LEM's fluxgate technology. The current sensors achieve ultra-high precision current measurements for DC, AC and pulsed currents. Using fluxgate technology in transducers for precise current measurement is not new; however, it has limitations linked to a ripple that stems from the excitation voltage. LEM takes fluxgate current transducers to "previously unachieved performance levels" through digital technology, gaining not only a major reduction of the ripple from the fluxgate driving signal but significantly improving the device's immunity to temperature effects, interference and supply voltage variation. In addition, LEM has used FPGAs for faster start-up of these UL/UR certified devices. The IN 1500-S device provides a linearity up to ±0.0002 % within a frequency bandwidth up to 2 MHz @ ±3dB while operating at temperatures between -40 °C and +85 °C at a stability up to 0.1 ppm/month. | 30.04.2025 15:30:00 | Apr | news_2025-05-15_16.jpg | \images\news_2025-05-15_16.jpg | https://www.lem.com/en/in | lem.com |
| Thermoset Laminates for Automotive Radar Sensor Applications | Rogers announced its latest innovation in dielectr... | 12376 | Product Release | Thermoset Laminates for Automotive Radar Sensor Applications | Rogers announced its latest innovation in dielectric materials: RO4830™Plus Circuit Materials, which are well suited for cost-sensitive millimeter wave PCB applications, such as 76-81 GHz automotive corner radar sensors. RO4830 Plus woven glass free, thermoset laminates possess the stable dielectric constant and low insertion loss required by RF designers for millimeter wave automotive radar sensors. The design dielectric constant of RO4830Plus laminates is approximately 3.03 at 77GHz (microstrip differential phase length method). The combination of Rogers' low loss thermoset resin and very low profile electrodeposited copper foil translates to a very low insertion loss of 1.5 dB/inch for 5mil laminates, as measured by the microstrip differential phase length method. RO4830™ Plus laminates are engineered for the cap layer on FR-4 multi-layer board designs, which are commonly used for 76- 81 GHz automotive radar sensor PCB applications. These thermoset laminates are free of woven glass, contributing to good laser drilling performance, and CAF resistance. RO4830 Plus laminates can be fabricated using standard epoxy/glass (FR-4) processes and are compatible with RO4400™ bond ply. These PFAS-free laminates have the UL-V0 flame retardant rating and are lead free solder process compatible. | 27.04.2025 06:30:00 | Apr | news_2025-05-15_7.jpg | \images\news_2025-05-15_7.jpg | https://www.rogerscorp.com/news/2025/rogers-corporation-launches-new-thermoset-laminates-for-automotive-radar-sensor-applications | rogerscorp.com |
| High-Voltage Resonant Inductors and Power Conversion Solutions at PCIM 2025 | ITG Electronics will showcase its latest power con... | 12359 | Industry News | High-Voltage Resonant Inductors and Power Conversion Solutions at PCIM 2025 | ITG Electronics will showcase its latest power conversion solutions at the at PCIM 2025 in Nuremberg, Germany, May 6 – 8, 2025. Attendees can explore ITG's newly released High-Voltage Resonant Inductors, along with a wide range of advanced power conversion solutions. Among other solutions, at PCIM 2025 ITG Electronics will also highlight its Mid-Tier PFC Chokes, offering cost-effective, high-performance power factor correction solutions. The company will showcase its LLC Transformers, designed for high-efficiency resonant power topologies, along with Power Block Converters, which provide robust power distribution capabilities. Additionally, ITG will feature its Quarter Brick 48V Down Converters, engineered for reliable and compact voltage regulation. At the forefront of ITG's exhibition will be its RL111008A and RL111010A series of high-voltage resonant inductors. Designed for industrial applications, these inductors feature industry-leading 5% tolerance control, ensuring accurate resonant frequency for LLC power conversion. ITG's RL111008A series offers an inductance range from 3-65uH and handles 64 Amps at 3uH, while the RL111010A series ranges from 16-200uH, supporting 32 Amps at 16uH. Both series are engineered for high-voltage, high-current applications with low AC losses. Rated for voltages from 600Vac to 1000VDC, they feature a dielectric strength of 4500VDC, ensuring robust performance in demanding industrial environments. Join ITG Electronics at PCIM 2025 (Booth 4-117, Hall 4) to see these innovations firsthand and discuss how ITG's power solutions can optimize your systems. | 25.04.2025 12:00:00 | Apr | news_2025-05-01_7.png | \images\news_2025-05-01_7.png | https://www.itg-electronics.com/en | itg-electronics.com |
| 1200 V SiC MOSFETs Six-Pack Modules | SemiQ has announced a series of 1200 V SiC MOSFET ... | 12367 | Product Release | 1200 V SiC MOSFETs Six-Pack Modules | SemiQ has announced a series of 1200 V SiC MOSFET Six-Pack Modules. These have been designed to enable more compact system-level designs at large scale. The high-speed switching SiC MOSFETs implement a planar technology with rugged gate oxide and a body diode. These are arranged in a three-phase bridge topology, with the modules additionally featuring split DC negative terminals, press-fit terminal connections and a Kelvin reference for stable operation. All parts have been tested beyond 1350 V, with 100 % wafer-level burn in (WLBI). They have been developed for applications including AC/DC converters, energy storage systems, battery charging, motor drives and PFC boost converters, including EV fast charging, induction heating and welding, renewable energy supplies and UPS. The modules are operational to 175 °C junction temperature, and have been designed for easy mounting, including direct mounting to a heatsink. The product family has been launched with 20, 40 and 80 mΩ variants (GCMX020A120B2T1P, GCMX040A120B2T1P and GCMX080A120B2T1P) that have a power dissipation of 263, 160 and 103 W respectively. They conduct a continuous drain current of 29 – 30 A and a pulsed drain current of 70 A. Additionally, they have turn-on switching energy of 0.1- 0.54 mJ and a turn-off switching energy of 0.02 - 0.11 mJ with a switching time of 56 - 105 ns. Including heatsink mountings the module measures 62.8 x 33.8 x 15 mm³. | 24.04.2025 13:30:00 | Apr | news_2025-05-01_15.jpg | \images\news_2025-05-01_15.jpg | https://semiq.com/semiq-launches-1200-v-gen3-sic-mosfet-modules-in-sot-227-package-for-reduced-switching-losses-and-improved-thermal-resistance/ | semiq.com |
| High Power Density SiC Power Modules | ROHM has developed the 4-in-1 and 6-in-1 SiC molde... | 12365 | Product Release | High Power Density SiC Power Modules | ROHM has developed the 4-in-1 and 6-in-1 SiC molded modules in the HSDIP20 package optimized for PFC and LLC converters in onboard chargers (OBC) for xEVs. The lineup includes six models rated at 750 V (BSTxxx1P4K01) and seven products rated at 1200 V (BSTxxx2P4K01). All basic circuits required for power conversion in various high-power applications are integrated into a compact module package, reducing the design workload for manufacturers and enabling the miniaturization of power conversion circuits in OBCs and other applications. The HSDIP20 features an insulating substrate with appropriate heat dissipation properties that suppresses the chip temperature rise even during high power operation. When comparing a typical OBC PFC circuit utilizing six discrete SiC MOSFETs with top-side heat dissipation to ROHM's 6-in-1 module under the same conditions, the HSDIP20 package was verified to be approx. 38 °C cooler (at 25 W operation). This heat dissipation performance supports high currents even in a compact package. Therefore, ROHM claims to achieve "industry-leading power density more than three times higher than top-side cooled discretes and over 1.4 times that of similar DIP type modules". As a result, in the PFC circuit mentioned above, the HSDIP20 can reduce mounting area by approx. 52% compared to top-side cooled discrete configurations. In industrial equipment the devices are suited for e. g. EV charging stations, V2X systems, AC servos, server power supplies, PV inverters or power conditioners. | 24.04.2025 11:30:00 | Apr | news_2025-05-01_13.jpg | \images\news_2025-05-01_13.jpg | https://www.rohm.com/news-detail?news-title=2025-04-24_news_hsdip&defaultGroupId=false | rohm.com |
| Super Junction MOSFETs for AI Server and Telecoms Power | WeEn Semiconductors highlights the company's lates... | 12369 | Product Release | Super Junction MOSFETs for AI Server and Telecoms Power | WeEn Semiconductors highlights the company's latest 600 V super junction MOSFET for computing and telecoms server applications. The WSJ2M60R065DTL has been specifically developed to address the demands of artificial intelligence (AI) and other high-performance processing applications by enabling improved efficiency, smaller form factors and easier thermal management. Based on the company's latest generation super junction technology, the WeEn WSJ2M60R065DTL super junction MOSFET is said to combine an "industry-leading on resistance (R<sub>DS(ON)</sub>) and figure of merit (R<sub>DS(ON)</sub>*Q<sub>g</sub>) with an ultra-compact TOLL package". The WSJ2M60R065DTL is rated for 50 A, features a maximum R<sub>DS(ON)</sub> of 65 mΩ and has a typical blocking voltage of around 700 V. An integrated and fine-tuned forward recovery diode (FRD) takes care of reverse recovery robustness and balanced high-temperature performance. The body diode can withstand a commutation speed of 1000 A/µs without damage, making the WSJ2M60R065DTL particularly suitable for Zero Voltage Switching (ZVS) applications in soft-switching topologies where it can deliver high efficiency while handling irregular operating conditions. At the same time, stable resistance performance delivers a steady and predictable R<sub>DS(ON)</sub> across a range of current and temperature conditions. | 23.04.2025 15:30:00 | Apr | news_2025-05-01_17.jpg | \images\news_2025-05-01_17.jpg | https://www.ween-semi.com/en/news/Second-Generation-Super-junction-MOSFET-Beginning-New-Era | ween-semi.com |
| Laser Drivers using Automotive-Qualified GaN FETs | Efficient Power Conversion (EPC) introduces the EP... | 12361 | Product Release | Laser Drivers using Automotive-Qualified GaN FETs | Efficient Power Conversion (EPC) introduces the EPC91116, a high-speed, high-current laser driver evaluation board tailored for indirect time-of-flight (iToF) applications in automotive and industrial sensing. Built around the AEC-Q101 qualified EPC2203 eGaN® FET, the EPC91116 delivers nanosecond-scale performance with a flexible, low-cost architecture that simplifies prototyping and accelerates time to market. As iToF systems become critical for automotive driver monitoring, in-cabin sensing, and 3D mapping, designers need tools that are ready for qualification and production. The EPC91116 answers this need with support for peak currents above 10 A, pulse widths as narrow as 5 ns, and switching speeds up to 100 MHz. These automotive-qualified components utilize the EPC2203, an 80 V, 17 A (pulsed), 0.9 mm × 0.9 mm GaN FET with 670 pC total gate charge and only 80 mΩ R<sub>DS(on)</sub>, and the AEC-Q100-qualified 74LVC2T45GS logic-level translator. The simplified gate drive eliminates the need for specialized gate drivers by using a low-cost CMOS logic IC to reliably drive GaN at up to 100 MHz. The input logic is compatible with logic levels from 1.2 V to 5.5 V with simple modification. This development platform is suited for engineers looking to implement automotive-grade iToF designs or explore other fast-switching power topologies such as Class-E amplifiers, SEPIC converters, or other lidar systems. | 23.04.2025 07:30:00 | Apr | news_2025-05-01_9.jpg | \images\news_2025-05-01_9.jpg | https://epc-co.com/epc/about-epc/events-and-news/news/artmid/1627/articleid/3209/low-cost-itof-laser-drivers-using-automotive-qualified-gan-fets | epc-co.com |
| 1200 V and 1600 V Rectifiers meet Automotive-Quality Standards | Taiwan Semiconductor introduces two series of high... | 12368 | Product Release | 1200 V and 1600 V Rectifiers meet Automotive-Quality Standards | Taiwan Semiconductor introduces two series of high-voltage rectifiers manufactured to AEC-Q101 standards and offered in automotive and commercial grade versions. The fast-recovery HS1Q Series (1,200 V, 1 A, high-efficiency) and the standard-recovery SxY Series (2 A, 1,600 V and 1 A, 1,600 V) rectifiers operate at a maximum junction temperature of 175 °C. They are integrated in a DO-214AC (SMA) package, which is RoHS compliant and halogen-free. Production Part Approval Process (PPAP) documentation is available. The components are suited for bootstrap, freewheeling and desaturation applications for IGBT, MOSFET and WBG gate drivers used in electric vehicles and high-voltage battery systems. Other applications include alternative energy systems; grid-tied and smart grid systems, medical, industrial, UPS systems and plasma generators, smart electric metering and others. | 22.04.2025 14:30:00 | Apr | news_2025-05-01_16.jpg | \images\news_2025-05-01_16.jpg | https://www.taiwansemi.com/en/ | taiwansemi.com |
| Call for Nominations for 2026 Global Energy Efficiency Award | Recognizing that energy efficiency is critical for... | 12374 | Event News | Call for Nominations for 2026 Global Energy Efficiency Award | Recognizing that energy efficiency is critical for addressing climate change and sustainability, PSMA now calls for nominations for its 2026 Global Energy Efficiency award. Nominations must be submitted by September 2, 2025. To submit a nomination, go to the 2026 Global Energy Efficiency Award web page. There is no cost for submissions, and nominees need not be PSMA members. Finalists will be announced on October 1, 2025. The 2026 winner will be awarded at next year's APEC 2026, which will be held in San Antonio, Texas. PSMA established its annual Global Energy Efficiency Award in April 2024 to honor breakthrough innovations that drive substantial energy savings across industries and applications. Nominees can be any company or organization worldwide that designs or manufactures electric-powered systems. The focus of the award criteria is on energy efficiency (rather than renewables or electrification), appliances and equipment (rather than building codes) and/or high global impact. PSMA is a non-profit professional organization with the two-fold objective of enhancing the stature and reputation of its members and their products and improving their technological power sources knowledge. Its aim is to educate the electronics industry, academia, government and industry communities as to the applications and importance of all types of power sources and conversion devices. | 22.04.2025 10:00:00 | Apr | news_2025-05-15_5.jpg | \images\news_2025-05-15_5.jpg | https://www.psma.com/technical-forums/energy-management/energy-efficiency-award | psma.com |
| International Workshop on Power Supply on Chip (PwrSoC 2025) | The 9th International Workshop on Power Supply on ... | 12353 | Event News | International Workshop on Power Supply on Chip (PwrSoC 2025) | The 9th International Workshop on Power Supply on Chip (PwrSoC 2025) will take place from September 24 to 26, 2025, at Seoul National University in Seoul, Korea, with Professor Jaeha Kim serving as the General Chair and Local Host. The PwrSoC Workshop is a leading international event focused on power supply integration technologies, specifically Power Supply on Chip and Power Supply in Package. Co-sponsored by IEEE and the Power Sources Manufacturers Association (PSMA), the workshop is held biennially at various locations worldwide, bringing together researchers and engineers from academia and industry to share the latest trends and discuss future directions. The technical program will follow a single-track format, featuring presentations from leading experts in power supply integration. Participants will also have the exclusive opportunity to visit SK Hynix's advanced semiconductor fabrication facility, gaining insights into one of the world's top memory manufacturers and its cutting-edge technologies. | 19.04.2025 06:00:00 | Apr | news_2025-05-01_1.png | \images\news_2025-05-01_1.png | http://pwrsocevents.com/ | pwrsocevents.com |
| EMC Shielding Tents | The shielding tents from Langer EMV-Technik have b... | 12366 | Product Release | EMC Shielding Tents | The shielding tents from Langer EMV-Technik have been specially developed for EMC measurements during development. They provide effective shielding against electromagnetic interference and enable precise measurements directly in the development environment – whether for reducing interference coupling in sensitive test set-ups or for the targeted injection of interference signals. For example, the Z23-1 set is a shielding tent which is suited for EMC measurements on small assemblies. It offers reliable shielding attenuation of 45 - 50 dB (30 MHz - 1 GHz) with dimensions of 900 × 500 × 400 mm³. When more space is needed, the Z23-2 set, measuring 900 × 500 × 650 mm³, comes into consideration. It provides the same effective shielding attenuation as the Z23-1 set, but is higher and therefore more flexible to use. | 17.04.2025 12:30:00 | Apr | news_2025-05-01_14.png | \images\news_2025-05-01_14.png | https://www.langer-emv.de/en/index | langer-emv.de |
| Radiation-hardened Power MOSFET Family | The JANS qualification represents the highest leve... | 12364 | Product Release | Radiation-hardened Power MOSFET Family | The JANS qualification represents the highest level of screening and acceptance requirements, ensuring the superior performance, quality and reliability of discrete semiconductors for aerospace, defense and spaceflight applications. Microchip Technology now announced the completion of its family of radiation-hardened (rad-hard) power MOSFETs to the MIL-PRF-19500/746 slash-sheet specification and the achievement of JANSF qualification for its JANSF2N8587U3, 100V N-channel MOSFET to 300 Krad (Si) Total Ionizing Dose (TID). Microchip's JANS series of rad-hard power devices is available in voltage ranges from 100 – 250 V to 100 Krad (Si) TID, with the family expanding to higher Radiation Hardness Assurance (RHA) levels, starting with the JANSF2N7587U3 at 300 Krad (Si) TID. The JANS RH MOSFET die is available in multiple package options including a plastic package using the MIL-qualified JANSR die, providing a power device for New Space and Low Earth Orbit (LEO) applications. The ceramic package is hermetically sealed and developed for total dose and Single-Event-Environments (SEE). The devices are designed to meet the MIL-PRF19500/746 standard with enhanced performance. | 17.04.2025 10:30:00 | Apr | news_2025-05-01_12.jpg | \images\news_2025-05-01_12.jpg | https://www.microchip.com/en-us/about/news-releases/products/microchip-completes-radiation-hardened-power-mosfet-family | microchip.com |
| Compact Coil-integrated Step-Down DC/DC Converter can replace LDOs | Torex Semiconductor has developed the XCL247/XCL24... | 12362 | Product Release | Compact Coil-integrated Step-Down DC/DC Converter can replace LDOs | Torex Semiconductor has developed the XCL247/XCL248 Series, compact general-purpose "micro DC/DC" converters with integrated inductors and high-voltage capabilities. Designed for space-saving and high-efficiency under light loads, these converters are suited for several applications, including industrial and consumer use. The XCL247/XCL248's most notable feature is its voltage capability of 36 V in relation to its space requirements. Additionally, with a quiescent current of 11 µA, the series delivers its efficiency across load conditions-86 % at V<sub>IN</sub> = 12 V, V<sub>OUT</sub> = 5 V, I<sub>OUT</sub> = 1 mA, and 88 % at I<sub>OUT</sub> = 300 mA. The device can replace traditional, larger high-voltage LDO regulators. The XCL247/XCL248 supports input voltages up to 36 V, compatible with 12 V and 24 V power supplies while providing an output current of 600 mA across a -40 °C to 105 °C temperature range. Its coil-integrated design minimizes PCB wiring patterns, reducing noise radiation from current loops. Additionally, the integrated coil eliminates the need for external coil selection. This series adopts P-channel driver FETs. This allows for 100% duty operation, enabling direct pass-through of the input voltage when it falls below the output voltage setting. | 17.04.2025 08:30:00 | Apr | news_2025-05-01_10.png | \images\news_2025-05-01_10.png | https://product.torexsemi.com/en/news/product/20250417_4654 | torexsemi.com |
| IGBT and RC-IGBT Devices for EVs | Infineon Technologies has launched a generation of... | 12360 | Product Release | IGBT and RC-IGBT Devices for EVs | Infineon Technologies has launched a generation of high-voltage automotive IGBT chips. Among these offerings are the EDT3 (Electric Drive Train, 3 rd generation) chips, designed for 400 V and 800 V systems, and the RC-IGBT chips, tailored specifically for 800 V systems. These devices enhance the performance of electric drivetrain systems, making them particularly suitable for automotive applications. The EDT3 and RC-IGBT bare dies have been engineered to create custom power modules. The generation EDT3 achieve up to 20 percent lower total losses over the EDT2 at high loads while maintaining efficiency at low loads. The EDT3 chipsets, which are available in 750 V and 1200 V classes, are well-suited for main inverter applications in a diverse range of electric vehicles. Its maximum virtual junction temperature is specified with 185 °C. Infineon's latest EDT3 IGBT chip technology is now integrated into the HybridPACK™ Drive G2 automotive power module, offering a power range of up to 250 kW within the 750 V and 1200 V classes. All chip devices are offered with customized chip layouts, including on-chip temperature and current sensors. Additionally, metallization options for sintering, soldering and bonding are available on request. | 16.04.2025 06:30:00 | Apr | news_2025-05-01_8.jpg | \images\news_2025-05-01_8.jpg | https://www.infineon.com/cms/en/about-infineon/press/market-news/2025/INFATV202504-087.html | infineon.com |
| Enhancing High-Performance Electric Motors | Hyperdrives has chosen CISSOID's SiC Inverter Cont... | 12357 | Industry News | Enhancing High-Performance Electric Motors | Hyperdrives has chosen CISSOID's SiC Inverter Control Modules (ICMs) to power its hollow conductor cooled electric motors. This collaboration aims to set new standards in power density, efficiency, and performance within the electric vehicle industry and beyond. Hyperdrives' approach utilizes a direct cooling system that dissipates heat at its source by channelling cooling fluid through hollow conductor windings. This design enhances heat dissipation by a factor of ten, allowing for continuous currents three times higher than traditional systems and resulting in motors that are twice as power-dense. The company's automotive flagship product, Hyperdrives One is said to reduce material costs by up to 40 %. To complement this motor design, Hyperdrives has integrated CISSOID's 3-Phase 1200 V / 550 A SiC Inverter Control Module. | 15.04.2025 10:00:00 | Apr | news_2025-05-01_5.jpg | \images\news_2025-05-01_5.jpg | https://www.cissoid.com/news/hyperdrives-selects-cissoid-s-inverter-control-modules-to-enhance-high-performance-electric-motors-30 | cissoid.com |
| Automotive Qualification for GaN Products | Navitas Semiconductor has announced its high-power... | 12356 | Industry News | Automotive Qualification for GaN Products | Navitas Semiconductor has announced its high-power GaNSafe™ ICs achieve automotive qualification for both AEC-Q100 and AEC-Q101, showcasing GaN's next inflection into the automotive market. This 4th generation family integrates control, drive, sensing, and critical protection features that enable reliability and robustness in high-power applications. It is claimed to be "the world's safest GaN with short-circuit protection (350 ns max latency), 2 kV ESD protection on all pins, elimination of negative gate drive, and programmable slew rate control". All these features are controlled with 4-pins, allowing the package to be treated like a discrete GaN FET, requiring no V<sub>CC</sub> pin. The Automotive Electronics Council (AEC) lists various qualifications focused on failure mechanism-based stress tests for packaged integrated circuits (AEC-Q100) and discrete semiconductors (AEC-Q101) used in automotive applications. Navitas' GaNSafe has been qualified to both standards to ensure that both the discrete power FET stage and the combined IC solution meet these stringent specifications. To support the qualification, Navitas has created a reliability report that analyzes over 7 years of production and field data. It demonstrates their track record, alongside generational and family improvements in robustness and reliability, establishing GaN power ICs as highly reliable and automotive-ready. This reliability report is available to qualified customers. | 15.04.2025 09:00:00 | Apr | news_2025-05-01_4.jpg | \images\news_2025-05-01_4.jpg | https://navitassemi.com/navitas-announces-automotive-qualification-of-high-power-gansafe-ics/ | navitassemi.com |
| Reliable Board-to-Board Connection Solution | Würth Elektronik ICS highlights its lead-free Powe... | 12363 | Product Release | Reliable Board-to-Board Connection Solution | Würth Elektronik ICS highlights its lead-free Powerelement 'LF PowerBasket', a pluggable high-current contact for contacting printed circuit boards in demanding industrial and automotive applications. The LF PowerBasket can be connected to the PCB using press-fit technology, SMT or THT. Thanks to a special contact alloy, the LF PowerBasket can be used at a continuous operating temperature of 150 °C. The contact springs of the LF PowerBasket form a basket that is designed to hold the contact pins and blades with low insertion forces. This basket design of the LF PowerBasket without a plastic housing is characterized by a position tolerance of 0.6 mm. The Powerelement can therefore be used for board-to-board connections with multiple contacts. The pluggable connections enable reduced installation effort and simplified maintenance procedures. | 11.04.2025 09:30:00 | Apr | news_2025-05-01_11.jpg | \images\news_2025-05-01_11.jpg | https://www.we-online.com/en/news-center/press?instance_ID=5506&d=wuerth-elektronics-ics-pcim-2025 | we-online.com |
| Research: Tree Gum supercharges Supercapacitor Lifespan | A waste gum produced by trees found in India could... | 12355 | Industry News | Research: Tree Gum supercharges Supercapacitor Lifespan | A waste gum produced by trees found in India could be the key to unlocking a new generation of better-performing, more eco-friendly supercapacitors, researchers say. Scientists from universities in Scotland, South Korea and India are behind the development, which harnesses the unique properties of the otherwise useless tree gum to prevent supercapacitors from degrading over tens of thousands of charging cycles. The team's finding could help reduce the environmental impact of supercapacitors, whose long-term performance can be affected by their use of acidic electrolytes, which can cause unwanted side reactions with their metal electrodes, reducing their ability to hold their full charge over time.bIn a paper published in the journal Energy Storage Materials, the researchers demonstrate how they combined gum kondagogu, a polysaccharide produced by the bark of the Cochlospermum Gossypium tree, to sodium alginate to manufacture a spongelike biopolymer they called 'KS'. They found that adding KS to the acidic electrolyte of a conventional supercapacitor helped to create a protective layer over its carbon electrodes. The KS layer helped prevent physical degradation of the electrodes while still allowing the ion transport process which enables the supercapacitor to charge and discharge. In lab tests, they showed that their improved electrolyte boosted the supercapacitor's performance significantly, helping it maintain 93 % of its full energy capacity after 30,000 cycles. Over the same span, the capacity of an otherwise identical supercapacitor tested by the team dropped to just 58 %. The team's paper, titled 'Long-lasting supercapacitor with stable electrode-electrolyte interface enabled by a biopolymer conjugate electrolyte additive', is published in Energy Storage Materials. | 11.04.2025 08:00:00 | Apr | news_2025-05-01_3.jpg | \images\news_2025-05-01_3.jpg | https://www.gla.ac.uk/news/headline_1170597_en.html | gla.ac.uk |