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Read through my personal pick of news around people, our industry, important events and interesting product releases. Or click on a filter and pick your area of interest!

Vertically Stacked Packaging Technology in a Half-Bridge Configuration

Learn more:
aosmd.com

Product Release
2026-07-07

Alpha and Omega Semiconductor introduced its AOPL66801 80V MOSFET in a half-bridge configuration available in a state-of-the-art DFN6x5 AmpStack™ MOSFET package. This breakthrough packaging technology enables high-density designs for various power conversion applications, ranging from next-gen Megawatt AI factories to everyday power tools. Designed to support high power-density requirements, AOS’ packaging uses vertically stacked die technology with two MOSFETs connected as a high-side and low-side MOSFET, forming a half-bridge. This configuration effectively increases power density and maximizes available PCB space compared to a two DFN5x6 discrete MOSFET solution. The AOPL66801 also features an optimized clip design for the switch node connecting the two MOSFETs, which minimizes parasitic inductance between the high-side and low-side MOSFETs. Compared to a standard discrete solution, the AOPL66801 minimizes parasitic inductance on the PCB, reducing phase-node voltage ringing and decreasing stress on the MOSFET. The PCB layout can affect gate-driving performance and degrade switching performance due to parasitic inductance. The AOPL66801 has a Kelvin sense pin that maintains gate-voltage stability during large di/dt switching and provides a more effective drive path for the high side, reducing losses. In addition, AOPL66801 has a maximum junction temperature of 175 °C, providing increased capability. These factors provide significant system-level improvements that support higher power density and increased operational efficiencies.

Standard-Level 40 V MOSFETs for Motor Control Circuits

Learn more:
vishay.com

Product Release
2026-07-07

Vishay introduced four V TrenchFET® Gen IV standard-level n-channel power MOSFETs in the 6.15 mm by 5.15 mm PowerPAK® SO-8 single package. Optimized for the noisy environments of motor control circuits, the Vishay Siliconix SIR5402DP, SIR5404DP, SIR5406DP, and SIR5408DP combine a high minimum gate-source threshold voltage of greater than 2.5 V with Q / Q ratios of less than 1. The high minimum gate-source threshold voltage of the devices released today prevents false MOSFET triggering induced by the gate in motor control circuits, while their optimized Q_gd / Q_gs ratios reduce gate-induced voltage fluctuations and the impact of gate noise. Both characteristics make the devices ideal for providing synchronous rectification and DC/DC conversion in BLDC motors, power tools, drones, and automation systems. The meet the requirements of specific applications, the SIR5402DP, SIR5404DP, SIR5406DP, and SIR5408DP are available with a range of typical on-resistance values from 0.9 mW to 2.5 mW at 10 V, and gate charge values from 32.6 nC to 82 nC. The MOSFETs are 100 % R_G- and UIS-tested, RoHS-compliant, and halogen-free.

Hjalti Pall Thorvardarson Appointed Chief Operating Officer

Learn more:
danisense.com

People
2026-07-06

Danisense has appointed Hjalti Pall Thorvardarson as its new Chief Operating Officer (COO), further strengthening the company’s leadership team as it continues to expand its global operations and product portfolio. Thorvardarson brings extensive experience in electronics engineering, operational management and business leadership. A Computer and Electronics Engineer by training, he has built his career within a Danish high-tech SME specializing in functional testing and simulation solutions for the space and defense industry. Progressing from student employee to Hardware Engineer, Project Manager, Department Head and ultimately CEO for the past eight years, he has proven hands-on expertise across engineering, product development, manufacturing and management.

Joint Efforts on Advancing Medium-Frequency Transformers for Solid-State Transformers

Learn more:
sumida.com

Industry News
2026-07-05

Sumida and Infineon Technologies are jointly advancing next-generation medium-frequency transformer (MFT) solutions as a key enabler for Solid-State Transformer (SST) architectures. This collaboration combines Infineon’s leadership in power semiconductor technologies with Sumida’s expertise in high-performance magnetics, addressing the rapidly evolving requirements of electrification, grid modernization, and ultra-fast charging infrastructure. SST systems represent a paradigm shift in power conversion by enabling higher efficiency, reduced system size, and enhanced controllability. At the core of these systems, medium-frequency transformers operate at significantly higher switching frequencies compared to conventional transformers, enabling significant size and weight reduction, improved power density and efficiency, enhanced bidirectional power flow capabilities, and integration into modular, scalable power architectures. Sumida’s magnetics design capabilities, particularly in core materials, winding technologies, thermal optimization and fulfilling the challenging isolation requirements of MVAC Input are closely aligned with Infineon’s latest wide-bandgap semiconductor technologies, ensuring optimal system performance, by using up to 3.3 kV CoolSiC™ devices. A key milestone of this collaboration was showcased at PCIM Europe 2026 in Nuremberg, one of the leading international exhibitions for power electronics. The positive industry feedback at PCIM underscores the growing relevance of integrated SST solutions and validates the collaboration’s technological direction. The joint effort between Infineon and Sumida exemplifies a cooperative, forward-looking approach to innovation in power electronics. By combining complementary strengths, both companies are accelerating the development of highly efficient, compact, and scalable SST solutions - paving the way for the next generation of electrified infrastructure.

Safety Power Management IC for Electromechanical Braking

Learn more:
allegromicro.com

Product Release
2026-07-02

Allegro MicroSystems introduced the A81415, an ASIL-D-certified Power Management IC (PMIC) to integrate a wheel-speed sensor interface. The device provides electromechanical braking (EMB) designers with a simplified, single-chip power and sensing foundation for next-generation brake-by-wire systems. With an on-chip wheel-speed sensor interface (WSSI), the A81415 safety PMIC decodes standard 2-level, 2-level Pulse Width Modulation (PWM), and 3-level AK protocols (standard and high-resolution) without complicated analog circuitry or a separate decoder IC. By incorporating a fully integrated buck-boost pre-regulator, five Low-Dropout (LDO) regulators, and a single-inductor architecture that requires no external switches or diodes, the A81415 eliminates up to nine external components and unlocks up to $4 in semiconductor bill-of-materials (BOM) savings per vehicle, delivering meaningful cost advantages at OEM production scale. This level of integration opens up more than 50% of usable board space to provide the brake caliper with critical design headroom. Because the physical layer of the wheel-speed data is handled internally by the PMIC and the decoded data is shared over a Serial Peripheral Interface (SPI), the A81415 trims latency in the safety-critical loop and frees MCU bandwidth for faster braking response. Low-noise power rails are explicitly tuned to power Allegro’s XtremeSense™ TMR angle sensors and ensure the entire commutation and clamping-force signal chain is optimized as one coherent, high-resolution system from wheel to caliper.

Fab for Power Semiconductors and Analog/Mixed-Signal Technologies Opened

Learn more:
infineon.com

Industry News
2026-07-02

Infineon Technologies opened the Smart Power Fab in Dresden several months ahead of schedule. The new plant, with an investment volume of five billion euros, is the largest single investment in Infineon’s history and one of the largest investment projects in Germany, creating 1,000 new, direct jobs. The fab doubles Infineon’s manufacturing capacities at the Dresden site, thus creating the world’s largest factory for intelligent power semiconductors and analog / mixed-signal technologies. "We’re opening our new plant at just the right time," says Jochen Hanebeck, CEO of Infineon. "Our Smart Power Fab is creating urgently needed capacities for the key technologies of the future, for everything from energy supply for AI data centers to software-defined vehicles and renewable energies. Infineon is thus giving an important impulse in making the global AI revolution possible and securing supply chains in critical industries. By taking this step, we are strengthening our global vanguard position as a leading manufacturer of power semiconductors and analog / mixed-signal technologies." The building itself and the machine layout were pre-planned and optimized using a digital twin. System and process clearance is supported by AI algorithms. Furthermore, the connection to the Infineon plant in Villach as "One Virtual Fab" makes qualification of processes and products significantly faster than in the past. With the expansion, Infineon Dresden is further strengthening its position as a worldwide leading site for power semiconductors and analog / mixed-signal technologies; at the same time, it is also bolstering the European leadership role in the overall semiconductor cluster "Silicon Saxony" in and around Dresden.

Vincenzo Salmeri appointed President

Learn more:
currentos.org

People
2026-06-29

Vincenzo Salmeri, an international senior executive with nearly 30 years of experience within Schneider Electric, has been appointed as the new President of Current/OS, the independent global nonprofit foundation bringing together manufacturers, technology leaders and electrical experts to enable the safe and large-scale deployment of Direct Current (DC) in electrical distribution systems. His appointment marks Current/OS’ transition into a new phase of international development to accelerate the safe, scalable and interoperable adoption of Direct Current. Mr. Salmeri’s appointment comes at a pivotal moment for the energy transition. As electrification accelerates, driven by renewable energy, storage, electric mobility, digital infrastructure and the rapid growth of data centers, DC is emerging as a key enabler of more efficient, flexible and resilient electrical architectures. Current/OS aims to provide the shared rules, reference architectures and interoperability framework needed to make DC systems safe, repeatable and scalable across the market.

Patent for DC Power Junction System Technology

Learn more:
customelec.com

Industry News
2026-06-24

Custom Electronics announced it has received a patent for its proprietary junction system technology designed for safely connecting DC power sources in parallel while preventing batteries from discharging into one another. Designed as an agnostic junction platform, the technology can be utilized with batteries, solar power systems and other DC energy sources, which creates new opportunities for scalable power distribution and energy storage applications. The patented junction unit is engineered to connect multiple DC sources and energy storage devices to a common power bus while utilizing advanced control and protection circuitry to safely manage current flow throughout the system. The technology allows for hot-swapping of connected power sources in parallel, enabling continuous operation without interruption while improving overall system performance, safety and reliability. It creates opportunities for future energy solutions, such as battery banking systems, renewable energy integration and residential or commercial power appliances that can manage multiple energy sources through a single platform. By enabling batteries, solar arrays and other DC power sources to operate together safely and efficiently, the technology establishes a flexible foundation for next-generation energy storage and power management products.

Center for Microsystems Technology

Learn more:
xfab.com

Industry News
2026-06-23

A 127.4 million Euro funding provided to X-FAB MEMS Foundry by the German federal government and the Free State of Thuringia will support the expansion of manufacturing capacity through the construction of a cleanroom at the Erfurt site. The "Fab4Micro" project is among the most significant industrial investments made in Thuringia in recent years. In December 2025, the European Commission gave the green light for the funding. The project is an important component of the European Chips Act (ECA), through which Europe aims to strengthen its technological independence in semiconductors. The new facility is scheduled to begin initial production by the end of 2028. This will enable X-FAB to expand its production capacity for micro-electro-mechanical systems (MEMS), highly integrated microsystems, and photonics. MEMS are systems that comprise electronic, sensing and mechanical elements at the micro- and nanometer scale, used for example in smartphones, vehicles, medical devices, and other applications. The investment will also establish new manufacturing capabilities for high-performance microsystems that use heterogeneous integration technology to combine numerous electronic and optical functions in a single component, required for data centers or optical systems. The Fab4Micro project will also create new highly skilled jobs in the field of microsystems.

Award recognises strong Collaboration, Customer Support and Continued Growth

Learn more:
ttieurope.com

Industry News
2026-06-23

TTI IP&E – Europe has received the Honeywell IA Europe IS Partner of the Year Award at the Honeywell IA Europe Elevate 2026 partner event, held in Prague. The award recognises TTI IP&E – Europe’s contribution to Honeywell’s business growth in Europe. It also highlights the value of close day-to-day alignment between the two company teams in supporting customers, developing new opportunities and maintaining the inventory needed for responsive supply. Honeywell technologies available through TTI Europe include a broad range of solutions for demanding applications across industrial, transportation, medical, aerospace and defence markets. The portfolio covers products such as pressure, force, flow, position, speed, humidity, temperature and airflow sensors, as well as robust switch technologies for industrial and mobility applications. "We are truly honoured that TTI IP&E – Europe has received the Honeywell Partner of the Year Award," said Ronald Velda, Supplier Marketing Director – Connectors, Emech and Sensors at TTI IP&E – Europe. "This recognition reflects the outstanding trust, partnership, and cooperation between our teams, which has fuelled remarkable business growth and customer satisfaction. We sincerely appreciate the ongoing support and commitment from the Honeywell team in Europe to our joint business. TTI remains fully committed to further investing in inventory and continuing to develop a robust project pipeline to support our joint growth ambitions. We deeply value this prestigious award and look forward to strengthening our partnership with Honeywell in the years to come."

500 W Microinverter Reference Platform

Learn more:
eggtronic.com

Product Release
2026-06-22

Eggtronic, a semiconductor company providing IC controllers for power electronics, and Renesas Electronics released a jointly developed 500 W solar microinverter reference platform. The design combines Eggtronic’s EPIC™ mixed-signal controller technology with Renesas’ bidirectional Gallium Nitride switch to demonstrate an architecture to support microinverter OEMs and system manufacturers in developing next-generation solar microinverters and power conversion applications. The reference platform achieves 96.1 % average efficiency under CEC standards and 95.9 % under EU standards, validating the performance potential of a single-stage DC/AC topology. As photovoltaic (PV) module output continues to increase beyond 400 W, microinverter manufacturers must continuously optimize efficiency, thermal performance, component integration, and overall system cost. At the core of the platform is Eggtronic’s proprietary EPIC mixed-signal controller EPIC2ACO01. The controller executes patented Variable Frequency Modulation (VFM) and current-mode strategies designed to maintain Zero-Voltage Switching (ZVS) across the full load range. This single stage approach minimizes BOM cost, switching losses, reduces reactive power circulation, and maintains low Total Harmonic Distortion (THD), while enabling operation at switching frequencies up to 1 MHz - significantly reducing the size of magnetic components. The platform leverages Renesas’ TP65B110HRU bidirectional GaN switch, integrated in a common-drain configuration suitable for cycloconverter-based AC switching.

Certified R&D and Business Center in Drammen, Norway

Learn more:
delta-emea.com

Industry News
2026-06-18

Delta announced the official opening of its completely revitalized Research and Development (R&D) and business office facility in Drammen, Norway. Having achieved the prestigious BREEAM-NOR Excellent certification, the comprehensive deep-renovation project transforms a historic 50-year-old power electronics facility into a cutting-edge, 7,460-square-meter sustainable innovation hub. Designed to accommodate up to 210 employees, the facility serves as a vital development hub for Delta’s information and communications technology (ICT) power solutions, specifically advancing next-generation data center and telecom infrastructure. It integrates Delta’s own energy-efficient technologies to conquer the unique demands of high-capacity power testing, achieving an anticipated greenhouse gas emission reduction of over 50% compared to reference buildings. In tandem with this landmark inauguration, Delta announced a strategic change to its local legal entity name, transitioning from Delta Electronics Norway AS to Eltek Norway AS to significantly strengthen market opportunities. This renaming perfectly combines Eltek’s renowned local expertise with Delta’s vast global resources. By aligning these strengths, the company aims to deliver industry-leading technology to its customers, accelerate time-to-market, and reinforce a powerful "local for global" strategy from the Drammen hub.

Probes for High-Current Waveform Measurement

Learn more:
hioki.eu

Product Release
2026-06-18

HIOKI Europe introduces the CT6704 and CT6705 current probes for oscilloscopes built for current-waveform observation in power electronics development and power supply evaluation. The CT6704 measures up to 200 A over a frequency range of DC to 30 MHz; the CT6705 measures up to 500 A over DC to 15 MHz. Both connect to any oscilloscope via a standard BNC connection at 0.01 V/A. These probes address two key challenges in modern power electronics: maintaining a stable zero baseline with negligible temperature drift and measuring high currents across a substantially wider frequency range than the previous probe generation. HIOKI realizes this performance by applying the fluxgate sensing principle from its precision current sensors to high-bandwidth probes. Both probes output their signal at 0.01 V/A via a standard BNC connector and can be used directly with oscilloscopes, Memory Recorders, and DAQ systems. The offset temperature coefficient is specified at ±0.1 mV/°C for reliable baseline stability over temperature, while the amplitude accuracy has doubled from ±1.0% to ±0.5% of reading. CT6704 combines 200 A rated current with 30 MHz bandwidth, corresponding to 11.6 ns rise time, and CT6705 combines 500 A rated current with 15 MHz bandwidth, corresponding to 23.3 ns rise time. Typical examples are GaN and SiC power converter development, EV powertrain and inverter testing or switching power supply design and verification. Other major applications are motor drive and industrial power electronics testing, data center backup power and load transient evaluation, renewable energy inverter validation as well as laboratory waveform analysis.

Nanocrystalline EMI Shielding Sheets

Learn more:
we-online.com

Product Release
2026-06-17

Würth Elektronik is expanding its EMC product portfolio with nanocrystalline WE-FNCS sheets. The flexible and thin nanocrystalline layers, protected by a PET cover layer, are supplied in the form of adhesive tapes and strips. They attenuate electromagnetic interference signals in the frequency range from around 10 Hz to 120 MHz. The sheets can be used as a simple, cost-effective way to make housings for electronic devices EMC compliant without the need for mu-metal. Both emissions and external interference are challenges for developers during EMC testing, when demonstrating compliance with standards such as CISPR 32, especially in the lower frequency range. Components such as power transformers, common-mode chokes (CMCs), DC/DC converters, inverters, switched-mode power supplies, Hall effect sensors, as well as medical systems including MRI scanners, can generate unwanted magnetic fields or be affected by them. WE-FNCS is a magnetic absorber specifically developed to suppress low-frequency EMI. Its nanocrystalline structure ensures high magnetic permeability and flux saturation, ensuring uniform attenuation across the entire low- and mid-frequency range. By adapting the number of internal nanocrystalline layers, the absorption performance can be scaled to meet the requirements of different applications. Multi-layer configurations with tailored permeabilities help optimize the shielding effectiveness of a solution while keeping it thin, flexible and easy to integrate. This is particularly beneficial in applications where space is limited. Würth Elektronik can supply WE-FNCS with customized formats and layer configurations.

Event on Test & Measurement for Aerospace Applications

Learn more:
datatec.eu

Event News
2026-06-17

Experience on 7 July 2026 in Berlin how precise test and measurement technology supports demanding aerospace applications. Look forward to practical technical presentations in English, direct exchange with experts and an equipment exhibition with our partners and manufacturers. The focus will be on specific real-world applications, technical solution approaches and your individual questions.

Manufacturer of Transformer Insulation Kits and Components Acquired

Learn more:
hitachienergy.com

Industry News
2026-06-17

Hitachi Energy announced a major expansion of its North American transformer insulation business through signing a definitive agreement to acquire Canduct Group. The investment addresses a bottleneck in the region’s transformer supply chain by expanding the company’s North America regional insulation and components capabilities, strengthening resilience, and accelerating the delivery of essential grid infrastructure. Hitachi Energy’s acquisition of Canduct is expected to close at the beginning of the third calendar quarter of 2026, subject to customary closing conditions. Canduct manufactures transformer insulation kits and components, serving OEMs and repair companies across the U.S. and Canada. Founded in 1982, the company has supplied high-quality transformer insulation solutions to Hitachi Energy for over two decades. By integrating Canduct’s operations and more than 300 employees, Hitachi Energy will expand its capabilities to deliver critical transformer components needed to support the unprecedented growth in electricity demand.

PFC Controller targets Battery Chargers, Power Adapters, and Power Supplies

Learn more:
st.com

Product Release
2026-06-16

STMicroelectronics’ L6462A transition-mode (TM) power-factor correction (PFC) controller cuts bill-of-materials (BOM) costs while enhancing efficiency, enabling consumer products and power supplies up to 250W to meet stringent eco-design norms. The L6462A uses a current generator and shaper to produce a sinusoidal reference, instead of a conventional voltage sensor and analog multiplier, permitting boost-PFC converters without external voltage-divider components. In addition, the IC coordinates the PFC conversion cycles by sensing inductor demagnetization via the gate-driver output and hence requires no auxiliary inductor winding or interface components.In addition to lowering BOM, the L6462A’s innovative current shaping and demagnetization sensing minimizes distortion (THD) and enhances efficiency, particularly at intermediate and light loads. The controller thus permits economical PFC with superior performance, targeting high-end battery chargers, power adapters, and power supplies for domestic and consumer products like flat-panel televisions and lighting drivers. The idle current is below 60μA, helping equipment meet strict eco-design rules on standby power. At full load, the L6462A operates in quasi-resonant mode - valley switching - to minimize power dissipation. As the load is reduced, valley skipping progressively reduces the operating frequency to maintain efficiency. In addition, the controller has a deep burst-mode threshold that ensures smooth dimming in LED-lighting applications.

High-Isolation Gate Drive Converters

Learn more:
murata.com

Product Release
2026-06-09

Murata introduces its MGJ1T series, a range of 6 kV DC isolated 1 W surface-mount DC/DC converters. It is designed for powering high-side and low-side gate drive circuits in inverter, power conversion and motor drive systems. The MGJ1T series has been developed for increasing system voltages and switching speeds in applications such as energy storage systems (ESS/BESS), microgrids, EV charging infrastructure, industrial motor drives, and high-voltage power converters. Configured as a 1 W solution, the converters support nominal input voltages of 12 V, 15 V and 24 V, and provide regulated dual outputs of +15 V /-3 V, +15 V /-5 V and +18 V /-2.5 VEach device is 100% production ‘HiPot’ tested to 6 kV_DC for one second and qualified to the same level for one minute, ensuring robust dielectric strength. The series is recognised to UL62368-1 and provides reinforced insulation with a working voltage of 800 V_rms, for applications requiring high levels of protection with a continuous barrier withstand voltage of 2.2 kV_DC. Internal construction achieves 14 mm creepage and clearance, supporting reliable operation in high-voltage environments. The MGJ1T shows a CMTI greater than 200 kV/μs. Combined with an isolation capacitance of typically 2.5 pF, this reduces high-frequency noise coupling across the isolation barrier and supports stable switching in SiC-based designs. Operating at a switching frequency of approximately 700 kHz, the converters achieve a typical ripple and noise of 10 mV_p-p and efficiencies up to 77 %.

Top-Side Cooling Package for SiC MOSFETs

Learn more:
rohm.com

Product Release
2026-06-09

ROHM has developed the TSC3PAK (14.00 × 18.58 × 3.50 mm³) package for SiC MOSFETs. By adopting a top-side heat dissipation structure that places the heat dissipation surface on the top of the package, this product enables automated mounting while achieving heat dissipation performance comparable to that of conventional through-hole packages (TO-247-4L)), which, in turn, contributes to greater efficiency and reliability in power conversion circuits for onboard chargers (OBCs) and electric compressors used in xEVs (electric vehicles). Conventional SiC devices have generally relied on through-hole packages, which provide excellent heat dissipation during high-power operation. However, through-hole type devices involve manual mounting processes, and their form factor makes it difficult to achieve a lower package profile. Against this backdrop, surface-mount SiC devices compatible with automated mounting have begun gaining adoption. To address these issues, the new TSC3PAK delivers heat dissipation performance comparable to through-hole technology such as TO-247 in a surface-mount package. The TSC3PAK offers a creepage distance of 6.66 mm, allowing it to accommodate an AC peak voltage of 1200 V in a Pollution Degree 2 environment while maintaining compatibility with products widely adopted in the market. By enabling safe insulation design in high-voltage applications, the TSC3PAK also contributes to reduced mounting costs and higher reliability.

Focus on E-mobility, AI Data Centers, Renewable Energy and Smart Energy at PCIM Asia Shenzhen 2026

Learn more:
pcimasia-shenzhen.cn

Event News
2026-06-09

PCIM Asia Shenzhen 2026 will focus on the power electronics needs of three application markets placing new demands on power infrastructure: e-mobility, AI data centers, renewable energy & smart energy. Part of this Asian event series for the power electronics industry, the exhibition returns to the Shenzhen World Exhibition & Convention Center from 26 – 28 August 2026. It will expand its scale to 30,000 sqm, with more than 300 domestic and international exhibitors expected to participate and welcome professional visitors from around the world. At the show Mitsubishi Electric and Infineon will serve as strategic partners, while Semikron Danfoss, Fuji Electric and ROHM will participate as platinum sponsors. Long-term exhibitors such as CRRC and Power Integrations will also take part, alongside a number of new exhibitors joining the 2026 edition. Exhibits will showcase the components, equipment and applied solutions supporting the sector from development and manufacturing to finished applications. Technology coverage areas include integrated circuits, power semiconductors, sensors, power supplies, electronic testing and measurement, passive components, connectors, switches, semiconductor manufacturing and inspection technologies. This year there will also be e.g. an AI Data Centre Power Ecosystem Zone addressing the growing energy demands that large-scale AI computing places on data centre infrastructure. Focusing on the full power delivery chain from grid interfaces to chip-grade power transmission, the zone will present high-voltage DC power supplies, solid-state transformers, high-power-density modules and advanced liquid cooling systems. Three concurrent forums, the AI Power Application Forum, the Smart Drive and Control Forum and the GaN for Physical Conference, will examine the relevant technical and design considerations.

Institution in the Field of Electromagnetic Compatibility Research

Learn more:
we-online.com

Industry News
2026-06-09

Würth Elektronik representatives joined faculty and students to celebrate the tenth anniversary of the jointly established "Cátedra EMC Würth Elektronik – Universitat de València." Chair holders Professor José Torres, Professor Adrian Suarez, Ph.D., Jorge Victoria, and Antonio Alcarria, Product Managers at Würth Elektronik eiSos, welcomed Alexander Gerfer, Chief Technology Officer (CTO) of the Würth Elektronik Group, as the keynote speaker at the ceremony. Representing the university, Inmaculada Coma, Vice-Rector of the Universitat de València, praised the fruitful collaboration. The Chair of Electromagnetic Compatibility (EMC) was established ten years ago to advance both research and practical applications in this field. Since then, it has supervised doctoral dissertations as well as master’s and bachelor’s theses, delivered seminars and courses on EMC topics, and organized presentations at international conferences. Each year, Würth Elektronik proposes projects that enable internships both in the chair’s laboratory and at company’s headquarters. Coordination of these activities is overseen by PhD Jorge Victoria and Antonio Alcarria from Würth Elekronik’s Product Management team. "At Würth Elektronik, it’s always about the people. For us, support isn’t limited to customers; we also stand by researchers with advice and assistance and support student initiatives, for example. EMC has always been an important field for us, and with the Cátedra EMC, we fulfilled a dream ten years ago," said Alexander Gerfer, CTO of the Würth Elektronik eiSos Group, in his speech, and thanked everyone involved.

Power MOSFETs in wettable Flank Package

Learn more:
taiwansemi.com

Product Release
2026-06-09

Taiwan Semiconductor introduces the TQM series of automotive-grade power MOSFETs. The n-channel, 40V/60V devices come in a wettable flank PDFN56U package supporting drop-in pin compatibility with other package types. The wettable flank connections are ideal for automated placement, meeting automotive board mount testing and AEC-Q qualification testing and high yield manufacturability. Their low-profile packaging with heat-spreader contacts provides excellent thermal management and increased power density to meet the demands of many applications. In addition to 48V automotive systems, applications include industrial, solenoid and motor control, server power and other high-reliability DC-DC converters. "The PDFN56U footprint compatibility makes drop-in replacement for TDSON-8, LFPAK56 and DFN5x6 packages very straightforward – selecting our PDFN56U package with its wettable flank simplifies automotive test procedures," said Sam Wang, vice president, TSC Products. "The AEC-Q quality and reliability are also of benefit and many non-automotive applications where high reliability is required."

1200 V SiC MOSFETs in Top-Side cooled SMD Package

Learn more:
nexperia.com

Product Release
2026-06-09

Nexperia released 1200 V silicon carbide MOSFETs in QDPAK packaging, which is a top-side cooled surface-mount package optimized for high-power density and thermally demanding applications. Available in both industrial-grade and automotive-qualified variants, the portfolio offers R_DS(on) options of 17, 30, 40, 60 and 80 mΩ, delivering a scalable QDPAK platform for applications ranging from high-power systems to compact designs with demanding thermal and mechanical constraints. QDPAK packaging addresses a key limitation in high-voltage power conversion systems: heat dissipation through the PCB. By enabling a direct die-to-heatsink thermal path from the top side of the package, these devices reduce reliance on the board as the primary heat-spreading path and allow the semiconductor and PCB thermal domains to be managed more independently. Compared to conventional D2PAK-7 packaging, top-side cooled packages can deliver up to 3 kW higher output power at comparable thermal limits, while also providing around 40 °C additional thermal headroom at the same power level. Building on the existing X.PAK platform, QDPAK further extends power handling capability, enabling operation at approximately 3 kW higher power at comparable case temperatures, while offering around 23 °C additional thermal headroom at similar power levels. Well suited for EV onboard chargers (OBC), high-voltage DC-DC converters, EV charging infrastructure, photovoltaic inverters, uninterruptible power supplies (UPS), motor drives and datacenter power systems.

Strategic Collaboration on SiC Power Modules for Automotive Applications

Learn more:
nexperia.com

Industry News
2026-06-09

Nexperia and Semikron Danfoss have signed a Memorandum of Understanding (MoU) to explore a strategic collaboration on SiC-based power modules for automotive traction inverter applications. The collaboration aims to combine Nexperia’s expertise in SiC semiconductor technology with Semikron Danfoss’ capabilities in power module packaging and integration. Together, the companies intend to evaluate how a joint approach can enable high-performance, scalable solutions for next-generation electric vehicles. SiC technology plays a critical role in improving the efficiency, power density, and performance of electric drivetrains. By bringing together complementary competencies across the value chain – from chip to module – the companies aim to advance optimized solutions tailored to the demanding requirements of automotive applications. As part of the collaboration, both companies will explore joint engineering approaches, including early integration and co-design, to unlock the full performance potential of SiC-based systems. Both companies share a strong European heritage and longstanding industry experience, providing a foundation for exploring future collaboration opportunities in the automotive power electronics space.

Reference Design for compact GaN-based 3-Phase BLDC Motor Drive Inverters

Learn more:
epc-co.com

Product Release
2026-06-09

Efficient Power Conversion (EPC) introduced the EPC91132, a compact 3-phase BLDC motor drive inverter reference design based on the EPC33110 GaN three-phase module. The EPC91132 is a 23 mm reference design inverter for small motor drives for humanoid wrists and hands and for drones. It incorporates the EPC33110 GaN module, containing three half bridges, gate drivers, bootstrap circuitry and level shifters in a 6 mm x 6.5 mm QFN package. The module can be powered by a single 5 V power supply up to 80 V with typical on-resistance of 11.7 mΩ and supporting 3.3 V or 5 V logic inputs. Operating in the 10 V to 60 V DC input range it includes the key functions needed for an inverter including a microcontroller, regulated power supplies, DC bus voltage sensing, current sensing with embedded overcurrent protection and onboard magnetic encoder for rotor position and speed control. The platform is programmable through a dedicated connector and can be monitored in real time through the RS-485 communication. The board has been designed with a flexible breakout-ring concept to support various form factors. With the outer ring removed, the board is 23 mm in diameter, which means it could be incorporated into small drone motors such as the Vertiq 23-06 platform. Performance tests have shown that the module can provide a continuous current of 11 A_RMS per phase for humanoid robotic joint applications operating at 48 V and switching frequency up to 100 kHz. Complete design support files, including schematics, bill of materials (BOM), and Gerber files, are available for download.

Power Company and Processor Provider join Forces

Learn more:
camgandevices.com

Industry News
2026-06-09

Cambridge GaN Devices (CGD) joins forces with NXP® Semiconductors to accelerate time to market in data centre and automotive markets. This long-term collaboration will enable NXP to develop GaN-based system solutions, leveraging CGD’s GaN products, early access to next-generation CGD GaN developments, and the team’s expertise in GaN processes and technologies. At the same time, CGD will benefit from access to NXP’s processor and analog product portfolios, system know-how and global commercial reach, accelerating market penetration through optimised system-level solutions. GaN semiconductors enable switching at higher frequencies and achieve greater efficiency compared to competing technologies. The rapidly increasing power demands in data centres is particularly driven by the growing use of AI. A single rack might have only consumed 40 kW in 2022 yet today can draw 200 kW or more and it is expected that a single rack will require 1 MW or more by 2030. The increased compute density and modern power architectures place stringent requirements on power density and the need to deliver high step-down ratios while maintaining power efficiency. ICeGaN® is positioned to address these requirements aiming to enable higher switching frequency operations, higher power density and delivering superior reliability compared to discrete GaN solutions.

Precise Fluxgate AC/DC Current Transducer

Learn more:
danisense.com

Product Release
2026-06-09

Danisense introduced a compact MBC4000I fluxgate AC/DC current transducer for current measurements of up to 4000A and more. The device delivers measurement performance levels up to 10 times higher than conventional Hall-effect transducer solutions currently on the market. Built on Danisense’s closed-loop fluxgate technology, the product provides an accuracy below 0.05% over the temperature range from -20 °C up to +85 °C and low sensitivity drift. Featuring an aperture of Ø 121 mm for busbar applications, a 1:5000 primary-to-secondary ratio, and minimal offset drift over temperature, the transducer is suited for demanding high-current measurement environments.

Low-Voltage Motor Driver Portfolio for Industrial and Smart Appliance Applications

Learn more:
novosns.com

Product Release
2026-06-09

NOVOSENSE’s NSD7305 and NSD7308 are 40V brushed DC motor drivers supporting both H-bridge and half-bridge configurations. The devices feature configurable output slew rate control and spread-spectrum clocking to help optimize EMI performance in motor drive systems. Integrated current mirror sensing eliminates the need for external sense resistors, helping simplify PCB design and reduce system cost. The devices also integrate protection and diagnostic functions including VM voltage monitoring, overcurrent protection, overtemperature protection, and open-load and short-circuit diagnostics. The NSD7305 supports up to 21A peak current with 47mΩ R_DS(ON), while the NSD7308 supports up to 12A peak current with 84mΩ R_DS(ON). Both devices support hardware and SPI interface versions and are designed as drop-in replacements for existing industry solutions. For compact motor control applications, the NSD7309 integrates a single-channel H-bridge driver supporting up to 8A peak current and 120mΩ R_DS(ON). The device supports PWM control, integrated current regulation, and comprehensive protection functions including undervoltage, overvoltage, overcurrent, and overtemperature protection. Typical applications include smart home devices, robotic appliances, electric curtains, massage chairs, and industrial control equipment.

Protection Solution for Data Centers, Renewable Energy and Charging Stations

Learn more:
mersen.com

Product Release
2026-06-09

Mersen’s high-performance fuses save space for equipment manufacturers and increase flexibility in installation. Whereas the engineers previously needed two different fuse types for AC and DC applications, only one is now required. The product range covers several rated currents, and the fuses can be used as standard AC fuses, aR fuses or fast-acting fuses. Their primary application area is power electronics, power conversion systems like but not limited to inverters, SST, CS and MCS. These systems convert direct current – e.g., from PV and wind energy plants – into grid-compatible alternating current. Manufacturing is performed on fully automated production lines in accordance with the latest technical standards (IEC, UL, CCC, RoHS, REACH, WEEE). Mersen also provides users with a range of data from simulation processes that demonstrate the fuse’s behavior in a customer-specific application. This facilitates product selection to match the respective requirements. Now there are two new sizes available for emerging DC applications up to 1000 V/1000 A.

Magnetics Design Platform now allows Planar Transformers plus Thermal Modelling

Learn more:
frenetic.ai

Industry News
2026-06-09

Frenetic Electronics adds new features to its web-based custom magnetics design platform, that aim to help solve magnetic challenges. An example of this approach is Frenetic’s planar magnetics design and simulation tool. Addressing another challenge, in the automotive sector where thermal constraints and power density are becoming increasingly demanding, Frenetic has introduced capabilities such as potting simulation and liquid cooling plate modeling. As power electronics systems move toward higher switching frequencies and more compact, integrated designs, planar magnetics are becoming increasingly common, yet also significantly more complex to design due to parasitics, thermal constraints, and integration requirements. Frenetic Simulator is used across multiple industries, including automotive, aerospace and data centres, each with very different constraints. Rather than building generic features, Frenetic is evolving its platform by working closely with these industries and understanding how magnetic design challenges differ across applications. The potting simulation capability allows automotive engineers to account for the thermal and electromagnetic impact of resin materials surrounding the transformer, which can significantly affect component behaviour. And cooling plate / liquid cooling support enables the modeling of metallic cooling structures integrated into the transformer and connected to liquid cooling systems, a growing requirement in high-power automotive applications.

Isolated Through-Hole Package for SiC MOSFETs for Direct-Cooled Thermal Management

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navitassemi.com

Product Release
2026-06-08

Navitas Semiconductor launched the UHV TO 247 4 ISO package, which is purpose built for 1200 V to 3300 V GeneSiC™ SiC MOSFETs, delivering module like performance in a compact discrete form factor. It offers over 12 mm pin-to-pin creepage and greater than 6000 V integrated isolation. When compared with standard non-isolated through-hole packages, this package not only eliminates the need for external high-voltage isolation but also improves thermal and EMI performance. This expands Navitas’ packaging portfolio, including SiCPAK® power modules, QDPAK, TO 247 LP, and other solutions, for more efficient, denser, scalable power systems in energy, grid, and AI data centers. A high-voltage isolated, reflow-compatible thermal pad lets the package mount directly to liquid- or air-cooled heat sinks, eliminating external TIM. This reduces R_TH,J-HS by up to 60 %, leading to up to 150 % increased power dissipation capability, improving power density, reliability, manufacturability, and overall system cost. Integrated high-voltage isolation reduces die-to-heatsink stray capacitance compared to external ceramic-based isolators, effectively minimizing common-mode noise and radiated EMI. This enables higher switching speeds and delivers improved power density, increased system efficiency, and reduced system-level costs associated with EMI mitigation. The package is compatible with the established high-voltage TO 247-4 form factor and lead geometry.

Silicon Carbide Technology is the Core Element in Semiconductor Circuit Breakers

Learn more:
infineon.com

Industry News
2026-06-08

Infineon Technologies and Siemens are partnering to advance electrical protection and ensure reliable operations in data centers, production facilities and battery storage systems. As part of the collaboration, Infineon will supply silicon carbide power modules to Siemens for use in its SENTRON 3QD2 semiconductor circuit breakers. Unlike traditional electromechanical circuit breakers, which rely on mechanical parts to interrupt the flow of current and typically operate on the millisecond scale, the Siemens SENTRON 3QD2 uses semiconductor components and smart protection algorithms to perform this function. This enables ultra-fast interruption in the microsecond range, up to 1,000 times faster than conventional systems. This capability is essential for DC grids and offers a significant increase in protection and system availability, which is crucial in applications like industrial manufacturing and AI data centers, where even a slight delay can cause costly downtime, data loss or expensive hardware damage in the event of electrical failures. The collaboration addresses the increasing demands of power critical applications, where speed, precision and reliability are essential. By integrating Infineon’s 62 mm CoolSiC™ MOSFET module 1200 V into Siemens’ protection concepts, the companies are contributing to more resilient, efficient and future-ready power infrastructure. This joint approach supports the growing adoption of DC grids and highly electrified environments, helping industrial and infrastructure operators meet rising performance and reliability requirements.

Jointly Developed Package for Power Semiconductor Modules

Learn more:
mitsubishielectric.com

Product Release
2026-06-08

Mitsubishi Electric announced that it has jointly developed a new standard package for power modules with integrated 3-level circuits, designed for industrial drive equipment and renewable energy systems, in collaboration with Semikron Danfoss Elektronik. This new standard package is based on Mitsubishi Electric’s LV100-type package for high-power applications and Semikron Danfoss’s SEMITRANS20 package. By optimizing terminal layout and functions specifically for 3-level circuits while ensuring compatibility between the two companies’ products, the package will help customers standardize their inverter designs. As the movement toward Green Transformation (GX) accelerates to realize a decarbonized society, demand is growing for power semiconductors that efficiently convert electricity. Particularly in the industrial sector, to further reduce power consumption, there is increasing adoption of 3-level circuits, which offer higher efficiency and allow for smaller peripheral components compared to conventional 2-level circuits. The package, jointly developed by Mitsubishi Electric and Semikron Danfoss, incorporates a 3-level T-type circuit, contributing to higher efficiency and more compact inverter designs. Furthermore, the optimal arrangement of main electrode terminals and auxiliary control terminals specifically for 3-level T-type circuits enhances inverter design flexibility. Moving forward, both companies will independently develop products using this new standard package, contributing to standardized inverter designs.

Collaboration on high-voltage SiC Technology for Railway Systems

Learn more:
mitsubishielectric.com

Industry News
2026-06-05

Mitsubishi Electric Europe B.V., Semiconductor Division, and Siemens Mobility GmbH, Business Unit Rolling Stock, are strengthening their collaboration on high-voltage silicon carbide (SiC) technology for railway traction applications with the signing of a long-term agreement. Building on the Memorandum of Understanding (MoU) signed in 2022 and leveraging their complementary strengths, both companies are advancing the development, qualification, and industrialization of SiC-based power modules to support more energy-efficient and high-performance railway drive systems. The collaboration provides a framework for ongoing technical exchange and the evaluation of next generation SiC solutions for future railway platforms. High-voltage SiC technology has already demonstrated its capabilities in railway applications. Traction systems equipped with SiC-based modules are operating in regular passenger service in selected Siemens Mobility projects, contributing to improved efficiency, lower energy consumption, and reliable system performance under real-world conditions. Based on these operational experiences and a well-established, reliable supply relationship, Siemens Mobility and Mitsubishi Electric Europe B.V., Semiconductor Division, continue to explore the application of advanced SiC module technologies in upcoming railway projects. Activities include the qualification of new module generations, optimization of system integration, and validation under demanding operating conditions typically required for high-capacity commuter and regional rail services.

800 V_DC Converters for Next-Generation AI Data Centers

Learn more:
advancedenergy.com

Product Release
2026-06-03

Advanced Energy Industries announced the ADH series of DC/DC converters designed for next generation 800 V DC AI data center power architecture. The ADH series converts 800 V DC input into 50 V DC output, operating at multi-MHz switching frequency with a peak power efficiency of 98.2 %. The converters deliver up to 8 kW peak power and 6 kW full load power in a standard half-brick package, delivering peak power density of over 2,700 W/In³ and full load power density of over 2,000 W/In³. By combining the ADH series with the NDQ series of ultra-efficient 50 V DC to 12 V DC non-isolated bus converter (NIBC) and the newly developed Hot Swap Control (HSC) module, which manages inrush current and provides additional protection functions, Advanced Energy delivers complete 800 V_DC power solutions that enable higher power levels and the increased power density required for megawatt-capable AI server racks.

Teaming up to establish U.S. Gallium Supply Chain

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indium.com

Industry News
2026-06-03

Indium Corporation® and Ames National Laboratory have announced a research and development partnership to expand U.S. production of gallium. The alliance will focus on developing the technologies needed to establish a domestic supply chain for an element that currently relies almost exclusively on imported sources. In the U.S., gallium is recovered as a byproduct of well-established, high-volume aluminum refining operations. Called the Bayer process, this method uses caustic liquids and high temperatures to extract and refine aluminum from raw ore. Gallium is typically present in the refining process waste in low concentrations of about 100 parts per million. Liquid-based refining methods typically use specialized polymers (resins), that can separate and concentrate metals from mining solutions. For this project, Ames Lab researchers are designing a heat-stable, efficient resin that is selective for gallium. Ames Lab’s robotic lab capabilities can generate high-quality data quickly. When paired with AI tools, the data can be rapidly analyzed to uncover patterns, optimize processes, and guide the iterative design of materials. These accelerated workflows can shrink the development timeline from decades to as little as two to three years. Scaling the technology is a joint effort, which will be done through a Cooperative Research and Development Agreement (CRADA): Indium Corporation will provide a U.S. resin testbed that mirrors high-volume production and techno-economic models to define the required material properties, and Ames Lab will synthesize materials up to the hundreds-of-grams scale. Future scale-up to kilograms and tons will continue collaboratively.

SMD Fuse for High-Current 48 V_DC AI Data Center Protection

Learn more:
littelfuse.com

Product Release
2026-06-02

Littelfuse announced the NANO2® Surface-Mount 708 Series Fuse, a surface-mount fuse offering a 14,000 A interrupting rating at 80 V DC. Engineered for next-generation 48 V DC power architectures, the 708 Series addresses the growing protection demands of AI servers, hyperscale data centers, and high-density power distribution systems. As power levels rise and board space shrinks, designers have been forced to rely on oversized, manually installed through-hole or bolt-down fuses. The 708 Series provides an automation-friendly alternative without compromising performance. It provides current ratings of 60 A to 200 A in a surface-mount package. The 708 Series is designed as supplemental overcurrent protection for circuits where high fault current is anticipated, including power distribution units (PDUs), power shelves, battery backup units (BBUs), and power supply units (PSUs). It is also suited for AI server clusters, networking equipment, and hyperscale data center infrastructure. Additional applications include renewable energy systems and battery management systems (BMS), where compact, high-power protection solutions are critical.

Complementary 30 V Dual MOSFET

Learn more:
toshiba.semicon-storage.com

Product Release
2026-06-02

Toshiba launched the SSM6L826R, a 30 V dual MOSFET that integrates both N-channel and P-channel MOSFETs in a single package. The product is suited for applications including single-phase brushless DC (BLDC) motor control, brushed DC motor control, and load switches for power supply lines in consumer and industrial control equipment. The SSM6L826R uses Toshiba’s UMOSVIIH process for the N-channel MOSFET and the UMOSVI process for the P-channel MOSFET. It is housed in a compact TSOP6F package (2.9 mm × 2.8 mm × 0.8 mm) with flat leads. The device achieves drain-source on-resistance (R_DS(ON)) values of 46 mΩ (max.) (V_GS = 10 V) for the N-channel MOSFET and 45 mΩ (max.) (V_GS = -10 V) for the P-channel MOSFET.

How 800V EV Innovations are Redefining AI Data Centers

Learn more:
idtechex.com

Industry News
2026-06-02

According to IDTechEx forecasts in the market report "Power Electronics Market 2026-2036: Data Centers, Electric Vehicles, and Renewables", the power electronics market for data centers is expected to grow 2.5-fold by 2036. A paradigm shift in data center power architecture is coming over the next few years in the form of HVDC (800 V_DC) data centers, which will unlock an order-of-magnitude increase in rack power. This overhaul in data center power architecture is directly influenced by 800 V EV power electronics, from the materials used to high-voltage safety and protection mechanisms. In its study IDTechEx tracks innovations across EV and data center power electronics, drawing deep, cross-application conclusions between EV and data center power electronics. Rack power levels have exploded from around 20 kW pre-ChatGPT to 100 kW today, with rack power expected to reach over 1 MW by the end of the decade. With incumbent Si power electronics and 480/54 V data center architecture, a 1 MW rack would require the whole rack space to be dedicated to power conversion and would need over 200 kg of copper. Data center efficiency was and still is a key consideration in data center design. Data center power density, the amount of power processed per unit volume, will become an increasingly critical metric for AI data center design. GaN will likely enjoy faster uptake in data centers than in electric vehicles. Reference designs for 8 kW and 12 kW power supply units (PSUs) across leading power electronics players, such as Infineon and Navitas, feature SiC for high-voltage conversion stages and power factor correction (PFC), and GaN for low-voltage conversion stages.

High Current Chip Ferrite Beads for EMI Suppression in High Density Power

Learn more:
bourns.com

Product Release
2026-06-01

Bourns announced the MH3261 T Series High Current Chip Ferrite Beads, designed to address EMI suppression challenges in high density PCB layouts where current capacity and board space are constrained. The series combines a 3.2 mm × 1.6 mm footprint with a rated current capability up to 11 A, enabling noise suppression without introducing excessive power loss. These characteristics support stable performance in space limited designs. As power densities increase and PCB assemblies become more compact, designers face tighter limits on allowable insertion loss while maintaining effective high frequency noise suppression. Ferrite beads used in these environments must carry higher currents without thermal overstress or impedance degradation. The MH3261 T Series addresses these constraints by pairing low DCR with a wide impedance range, supporting EMI control in dense layouts while operating across a broad temperature range from –55 °C to +125 °C. Its DC resistance is 0.0025 Ω , while the impedance range values from 30 Ω to 1000 Ω at 100 MHz.

800 V-to-12.5 V Power Conversion for AI Infrastructure built on NVIDIA MGX™

Learn more:
epc-co.com

Product Release
2026-06-01

Efficient Power Conversion (EPC) has provided details on its EPC91123 evaluation board, an 800 V DC to 12.5 V DC, 6 kW isolated converter designed to support next-generation AI data center power architectures. As a contributor to the NVIDIA MGX™ AI Factory ecosystem, EPC contributes GaN-based power conversion solutions designed to support emerging 800 V DC server architectures, enabling higher power density, improved efficiency, and scalable rack-level power delivery for next-generation AI infrastructure. By enabling direct 12.5 V conversion and eliminating the need for a 48 V intermediate stage, the solution improves overall system efficiency by 1–2 %. The converter is built on an input-series, output-parallel (ISOP) LLC topology and leverages Gen7 devices, including the 3.3 mm × 2.6 mm, 40 V, 0.8 mΩ EPC2366 and 150 V, 2.2 mΩ EPC2305. The solution achieves 98.2 % peak efficiency and 97 % full-load efficiency. Optimized for space-constrained AI server environments, the board delivers high power density in a compact 104 mm × 47 mm × 8 mm form factor.

Slim Auxiliary PSU Reference Designs for NVIDIA Kyber 800 V_DC AI Data Center

Learn more:
power.com

Product Release
2026-06-01

Power Integrations introduced two slim, compact auxiliary power supply reference designs for 800 V DC AI data centers. The single-output, 15 W design is 30 mm by 30 mm with a 7 mm profile, while the isolated, six-rail, 35 W design measures 80 mm by 60 mm with an 8 mm profile. Optimized specifically for the NVIDIA Kyber liquid-cooled, blade-rack architecture, these ultra-compact solutions free up approximately 30 percent space on densely packed main power distribution boards (PDBs) with an estimated 30 percent reduction in the BOM count - streamlining design and improving overall reliability. These designs are highly efficient with at least 88 percent efficiency across line and load. The newly published design example reports describe 35 W and 15 W flyback auxiliary power supplies for high-voltage AI data center applications. Both designs are based on Power Integrations’ InnoMux™-2 ICs with 1700 V PowiGaN™ GaN technology. The 1700 V-rated InnoMux-2 IC supports 1000 V DC nominal input voltage in a flyback configuration and can deliver flat efficiency of 90 percent in discontinuous conduction mode (DCM) while maximizing power delivery.

AI-based Magnetics and Power Design Tools in Asia

Learn more:
frenetic.ai

Industry News
2026-06-01

Frenetic Electronics has signed an agreement with Szdore Electronics of Shenzhen, China, to provide local support for designers. The company sees that closer relationships with customers is critical for the adoption of its tools in engineering-driven markets. Feedback loops that directly inform product development are also shortened. Frenetic offers three main tools which seamlessly integrate with each other: Frenetic Magnetic Simulator is used to customize and validate cores for transformers and inductors including winding configurations, loss & thermal modeling and leakage inductance. Frenetic Planar exists to design and simulate planar transformers in minutes. AI Converter Assistant helps engineers to move from converter specifications to initial topology suggestions and early-stage design guidance, LTspice & KiCad export.

Semiconductor Manufacturer joins MGX AI Factory Ecosystem for AI Server Racks

Learn more:
infineon.com

Industry News
2026-05-29

Infineon Technologies has joined NVIDIA’s MGX AI Factory ecosystem to help transform power delivery for next-generation AI data centers. Infineon’s power management solutions will support NVIDIA’s MGX™ architecture and 800 V_DC power architecture, an open, modular reference architecture designed for AI factories in the agentic AI era. 800 V_DC MGX-compatible power racks help existing AI infrastructure scale AI compute performance and power density, creating an upgrade path for future AI infrastructure. Using Infineon’s GaN technology at switching frequencies close to 1 MHz enables ultra-compact bus converters at a efficiency while the combination of Infineon’s proprietary SiC JFET technology and dedicated control ICs enable protection and hot-swap functionality of native 800 V server boards. Infineon’s power management solutions convert power from 800 V to 50 V, 12 V or even down to 6 V. As part of the NVIDIA MGX AI Factory ecosystem, Infineon supports the complete 800 V_DC power conversion flow down to an intermediate bus voltage and core voltage in systems based on NVIDIA MGX, helping to reduce conversion stages and deliver DC power closer to the rack. This improves power efficiency, simplifies infrastructure, and supports higher-density AI deployments.

Silicon Carbide Power Module operating at 205 °C

Learn more:
infineon.com

Product Release
2026-05-29

Infineon Technologies is introducing a 1300 V SiC module within the HybridPACK™ Drive family that is capable of continuous operation at temperatures up to 205 °C. Existing designs typically allow up to 175 °C. This increase enables automotive OEMs and Tier 1 suppliers to deliver higher peak and continuous output power from existing inverter designs or, in new designs, reduce system complexity and overall cost. The increased operating temperature enables up to 15 percent higher output current compared to existing designs, directly translating into higher inverter power density. At the same time, maintaining identical module size, footprint, and interfaces allows seamless integration into existing platforms and enables performance upgrades without costly redesigns or extended development cycles. This drop-in compatibility accelerates time-to-market for next-generation inverter designs while leveraging proven manufacturing and qualification processes. The extended temperature capability can also reduce cooling system requirements. This module is the first one in the HybridPACK Drive family to come with a 1300 V blocking voltage to improve inverter performance, efficiency and robustness beyond battery voltages of 900 V. Infineon will roll out the 205 °C operating capability also across its existing 1200 V SiC module portfolio within the product family.

Simulator for Rapid Power Electronics Circuit Verification

Learn more:
rohm.com

Product Release
2026-05-28

ROHM has released the ROHM PLECS® Simulator on its website. This simulation tool enables designers of power electronics circuits and system designers to rapidly simulate the operation of ROHM’s power devices online. The tool is based on the PLECS simulation software. The ROHM PLECS Simulator specializes in loss and thermal calculations. This allows users to simulate power loss and temperature rise in a matter of seconds to minutes by selecting a power electronics circuit topology from a list on the website and choosing from the various power devices offered by ROHM. This reduces the time and effort required for optimal device selection during the early stages of circuit design. Twenty different topologies are already available, and ROHM plans to expand the range of device models and topologies in the future, including SiC devices, IGBTs and power modules. It is possible to perform end-to-end simulation, ranging from design loss and thermal verification to waveform checking.

Partnership on Power MOSFET Manufacturing in the US

Learn more:
nexperia.com

Industry News
2026-05-27

Polar Semiconductor, LLC and Nexperia B.V. announced a strategic collaboration to manufacture next generation power MOSFET devices at Polar Semiconductor’s U.S. based wafer foundry. The partnership supports an expanded power MOSFET portfolio while strengthening supply for customers worldwide. By combining Polar’s expertise in power semiconductor manufacturing and ongoing capacity expansion with Nexperia’s power MOSFET technology, the collaboration addresses rapidly growing demand across AI server infrastructure, robotics, industrial, and automotive applications. Polar Semiconductor, a U.S.-based foundry with fully domestic manufacturing operations, runs a high volume wafer manufacturing facility in Minnesota. Polar is IATF 16949 certified. Under the collaboration, Nexperia is developing a portfolio of next generation power MOSFETs.

Power Meter with up to 4 Channels

Learn more:
anritsu.com

Product Release
2026-05-26

Anritsu released the ML2439A Power Meter, which operates in the frequency range from 10 MHz to 50 GHz (dependent on USB sensor model). Up to four Anritsu USB power sensors are supported simultaneously, including MA244xxA Peak Power Sensors, MA243xxA CW Sensors, MA242xxA and MA241xxA True RMS Sensors. The cassis measures 3.5 in x 8.3 in x 11.2 in (H x W x D), while the instrument allows for using the measurement modes RMS, Pulse, and Peak concurrently. The power of modulated and CW waveforms are displayed in both graphical and textual formats while a GPIB interface allows for legacy integration; Ethernet connectivity is also available.

3.3 kV Power Modules to Enable Solid-State Transformers for AI Data Centers

Learn more:
microchip.com

Product Release
2026-05-26

Microchip Technology presented its 3.3 kV HV‑D3 mSiC® Power Modules, designed to simplify and accelerate the adoption of solid-state transformers (SSTs) in AI hyperscale data centers and other high‑voltage power applications. These modules integrate 3.3 kV silicon carbide (SiC) mSiC MOSFETs and Schottky diodes in an industry‑standard 62 mm package, enabling efficient power delivery from the medium‑voltage grid directly to the server rack. As AI data centers continue to scale, token generation is limited by power availability, while efficiency is a defining factor for return on investment. Microchip’s HV‑D3 mSiC modules are engineered specifically to meet these requirements. The modules use Microchip’s mSiC MOSFET technology, which offers a good R_DS(on) stability over temperature, with packaging that supports 6 kV isolation, incorporates CTI 600‑rated materials and features extended creepage distances, designed to allow safe series connection for high‑voltage operation. A silicon nitride (Si₃N₄) substrate delivers the thermal conductivity and power‑cycling capability needed. The HV‑D3 mSiC power modules are available in half‑bridge and common‑source configurations, with and without anti‑parallel Schottky diodes, addressing applications in the 100-300 A range. While optimized for solid-state transformers in AI data centers, these modules also address applications like megawatt charging infrastructure for heavy‑duty vehicles, auxiliary power supplies for rail/heavy transportation, medium‑voltage motor drives, industrial and defense power systems.

Announcing 3D-PEIM 2026 Tutorial and Panel Session

Learn more:
3d-peim.org

Event News
2026-05-25

3D-PEIM 2026, an international symposium dedicated to 3D power electronics packaging and heterogeneous integration, will take place November 16–19, 2026, at Arizona State University in Tempe, Arizona. The symposium will bring together researchers, manufacturers, and industry leaders to discuss emerging technologies and manufacturing approaches shaping the future of advanced power packaging. As part of the 2026 technical program, the Organizing Committee is pleased to announce the addition of four expert-led tutorials and a special panel session to be held on Monday, November 16. The tutorial program will provide attendees with in-depth perspectives on key technical challenges and industry developments across advanced packaging, reliability, materials, and system integration. The 2026 symposium will also feature six plenary speakers, seven technical sessions, poster presentations, industry exhibits, and guided tours of ASU’s MacroTechnology Works facility. Technical focus areas include advanced packaging and 3D integrated modules, thermal management, design and simulation, reliability and failure analysis, passive components, power delivery and energy storage, and materials for advanced packaging. Conference registration will open June 8, 2026.

APEC 2027: Call for Technical Sessions Digest Submissions

Learn more:
apec-conf.org

Event News
2026-05-21

APEC 2027, to be held in New Orleans, Louisiana/USA, from March 7-11, 2027, is now accepting digest submissions for the Technical Sessions. Interested authors wishing to present a Technical Session paper must submit a digest for consideration by August 14, 2026. Instructions for submissions are available at: https://apec-conf.org/speakers/ts-author-info/. To facilitate higher-quality digest and final manuscript submissions, APEC 2027 offers significantly expanded submission windows for both. Topics of interest are divided into fourteen tracks, each with a diverse set of subtopics: AC/DC Converters, DC/DC Converters, DC/AC Inverters, Devices and Components, Magnetics, Power Electronics Integration and Manufacturing, Control, Modeling and Simulation, Motor Drives, Power Electronics for Utility Applications, Renewable Energy Systems, Transportation Power Electronics, Wireless Power Transfer, Power Electronics Applications. The Technical Sessions digest should explain the problem the paper addresses, its major results, and how it differs from the closest existing literature. Technical Session papers presented at APEC must be original material and not have been previously presented or published. The principal criterion used by reviewers in selecting digests for the program will be the usefulness of the work to the practicing power electronics professional. They also value evidence of completed experimental work. Authors will be notified of the decision of paper acceptance on October 12, 2026. Accepted papers final manuscript must be submitted and author registration completed by December 7, 2026.

Isolators for Galvanic Isolation of Digital Signals

Learn more:
we-online.com

Product Release
2026-05-20

Würth Elektronik is expanding its range of digital isolators (WPME-CDIS & WPME-CDIP) with 2-channel bidirectional isolators for I2C communication interfaces. WPME-CDI2C enables bidirectional data transmission at up to 2 MHz, making the isolator suitable for most I2C communication applications. The SOIC-8NB package is pin-compatible with common standard I₂C isolators on the market. The WPME-CDI2C isolator – designed for bidirectional I₂C interface applications with data rates of up to 2 MHz – offers an isolation voltage of up to 3750 V_RMS in accordance with UL 1577 and a basic insulation rating in accordance with IEC 60747-17 (VDE 0884-17). It offers high immunity to system noise, with a common-mode transient immunity (CMTI) of ±150 kV/μs. The device is available from stock in two variants: One features a bidirectional serial data line (SDA) and a bidirectional serial clock line (SCL). The other features a bidirectional serial data line (SDA) and a unidirectional serial clock line (SCL).

EU flagship Project Moore4Power to drive the next Generation of sustainable Power Electronics

Learn more:
infineon.com

Industry News
2026-05-20

Europe’s has launched an ambitious semiconductor R&D project involving 62 partners: Moore4Power (More than Moore for Disruptive Innovations in Power Electronics). Led by Infineon Technologies this chips joint undertaking initiative unites large entities, small and medium-sized enterprises and research institutes from 15 European countries to develop the next generation of smart, efficient and sustainable power electronics. With a total project volume of € 91 million, Moore4Power will run for three years aiming to deliver breakthrough innovations that strengthen Europe’s technological sovereignty and sustainability in the field of power electronics. For decades, progress in electronics followed Moore’s Law: smaller transistors, delivering higher performance at lower cost. Today, traditional scaling is reaching physical and economic limits. Moore4Power addresses this challenge by shifting the focus from individual components to system-level innovation. Combining technologies, materials, and functions in smarter, application-driven ways, the initiative unlocks major gains in efficiency, reliability and power density. At the core of Moore4Power is heterogeneous integration, which combines different semiconductor technologies such as silicon (Si), silicon carbide (SiC) and gallium nitride (GaN), together with sensing, control and communication functions to form tightly integrated systems. Each technology is used exactly where it performs best, enabling higher efficiency, improved reliability and more compact designs. Power chiplet technology enables scalable architectures and more flexible product variants at globally competitive cost levels. Moore4Power focuses on high-impact sectors where power conversion drives cost, CO₂ reduction and reliability. One central achievement is the Digital Product Passport (DPP), embedded directly into power modules via wireless access. The DPP will provide lifecycle data such as operating conditions, state of health and remaining lifetime throughout the product’s use.

Liquid-Cooled 3-Phase AC/DC Converters for High-Power Industrial Applications

Learn more:
belfuse.com

Product Release
2026-05-20

Bel Fuse launched its TLP5000 Series of liquid-cooled, high-power 3-phase AC/DC converters designed to meet the growing demands of industrial systems operating in extreme conditions. Built for applications such as high-power laser cutting, winding machines, and spinning mills, the platform delivers the reliability and robustness engineers need in demanding environments. While traditional power supplies use forced-air cooling, the rugged AC/DC converter integrates a liquid cooling system with a built-in cooling plate, which eliminates the need for fans and significantly improves reliability, thermal efficiency, and product lifespan. The TLP5000 Series can operate effectively in polluted environments, making it feasible for defense, industrial automation, and other harsh-condition deployments. The converter’s adjustable output voltage provides added design flexibility, allowing engineers to implement it across a wide range of high-power use cases and withstand continuous high-performance for a long lifetime. The TLP5000 Series also supports parallel operation with active current sharing, enabling scalable configurations up to 60 kW. To support modern industrial architectures, the series includes CAN bus communication for real-time monitoring, control, and diagnostics. Hot-plug connectors further enhance system uptime by allowing maintenance or replacement without requiring a full system shutdown, which is essential for automated environments and smart infrastructure where continuous operation is critical.

Gate Driver ICs for three-phase brushless Motors

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st.com

Product Release
2026-05-19

STMicroelectronics has introduced additional STDRIVE102 gate-driver ICs for three-phase brushless motors, adding the STDRIVE102P and STDRIVE102BP that feature an SPI interface to simplify configuring the gate current and other settings. Designed for supply voltages from 6 V to 50 V, the STDRIVE102 series enables energy efficiency in battery-operated equipment such as power tools and domestic appliances. Able to drive six external N-channel power MOSFETs, the drivers can be programmed to source up to 1 A and sink up to 2 A and provide slew-rate regulation without external resistors. A standby current of 50 nA typ. helps maximize battery life in portable and battery-powered applications. STDRIVE102 components integrate an advanced charge pump. Integrated 12 V and 3.3 V linear regulators (LDOs) power the internal low-side drivers and embedded analog front-end (AFE), and can also be used to supply external components. The STDRIVE102BP includes a configurable AFE with three programmable-gain amplifiers (PGAs) and three comparators for measuring the motor shunt currents. The PGAs and comparators can be enabled and disabled individually, or the entire AFE can be disabled to save energy. The STDRIVE102P has a simplified AFE with one PGA and one comparator. All STDRIVE102 devices are equipped with a comprehensive set of embedded protection features, including undervoltage lockout (UVLO) to ensure gate drivers operate safely and thermal shutdown. Evaluation boards are available.

Scalable Power Supply Solutions for Automotive SoCs

Learn more:
rohm.com

Product Release
2026-05-19

ROHM has developed a configurable power supply solution that combines the PMIC BD968xxC Series with the DrMOS BD96340MFFC, targeting automotive SoCs. This solution was developed based on a "Configurable" design concept enabling flexible adaptation to a wide range of SoC power requirements. It enables scalable power supply designs that support a wide range of SoCs, from low-end to high-end, by flexibly configuring combinations of main configurable PMICs, sub PMICs, and DrMOS devices according to application and performance requirements. All PMICs are designed for a 2.7 V to 5.5 V input voltage range. BD96803QxxC and BD96811FxxC are optimized for standalone operation with low-end SoCs. BD96805QxxC and BD96806QxxC, when combined with the DrMOS BD96340MFFC, can support low-voltage, high-current demands required by high-performance SoCs. The PMICs are housed in wettable flank QFN packages while the DrMOS is in a flip-chip QFN package. All devices are AECQ100 qualified, ensuring high reliability for in-vehicle applications. Typical applications are high-power SoCs for ADAS, DMS or Cockpit integration systems, mid-power SoCs for surround view systems or parking assist systems as well as low-power SoCs used in sensing cameras, body control systems and various sensor control systems.

Acquisition of Power Semiconductor Company

Learn more:
analog.com

Industry News
2026-05-19

Analog Devices, and Empower Semiconductor announced that they have entered into a definitive agreement under which ADI will acquire Empower in an all-cash transaction for $1.5 billion. As AI compute scales, power density – not just total watts – has become the limiting factor. Delivering high-density, high-efficiency power at the point of compute, while responding to fast-changing demands, is now one of the most critical challenges in system design. Together, ADI and Empower intend to help shape the power delivery architecture for AI and other compute-intensive applications. By enabling power conversion closer to the processor, the combined solution shortens the power delivery path and improves efficiency to support higher-performance, higher-density systems. Building on its know-how in power management, ADI is investing in its system-level platform to deliver a step-change in performance, density, and efficiency from grid to core. The transaction is expected to close in the second half of calendar year 2026.

SMT Current Sense Transformers

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coilcraft.com

Product Release
2026-05-19

The CSX7030 series from Coilcraft is a high-isolation, low-loss current sensing transformer designed for high-performance power electronics and automotive applications. It features a chip-style package with a low 3.3 mm profile and is manufactured using a highly automated process to ensure consistent quality and cost efficiency. With a low DCR of 0.52 mΩ on the primary and 1.87 to 34.08 Ω on the secondary side, the series reduces conduction losses and self-heating, making it well-suited for high-current applications up to 20 A. A range of turns ratios from 1:50 to 1:200 provides design flexibility, while bandwidth up to and beyond 1 MHz enables accurate high-frequency current measurement in fast-switching systems such as DC/DC converters, motor drives, inverters, and power management circuits. The CSX7030 is AEC-Q200 qualified, making it suitable for demanding automotive applications. It is specified for isolation voltages of 1000 V_rms and currents of 20 A with terminating resistances between 2.5 and 10.0 Ω.

Total Power Solution for Panther Lake and Wildcat Lake Platforms

Learn more:
aosmd.com

Product Release
2026-05-18

Alpha and Omega Semiconductor (AOS) announced a family of digital multiphase controllers: the AOZ71049QI, AOZ71149QI and AOZ71146QI. Specifically engineered for Intel IMVP9.3 Vcore power delivery, these 4-rail controllers - when paired with AOS’s benchmark DrMOS and Smart Power Stage (SPS) technology - provide a complete power solution for the latest Intel Panther Lake and Wildcat Lake mobile processor architectures. The AOZ71049QI series utilizes the proprietary AOS Advanced Transient Modulation (A²TM). This technology bridges the gap between digital flexibility and analog efficiency, combining variable-frequency hysteretic peak-current mode control with advanced phase-current sensing. This results in fast transient response and adequate current balance across both transient and DC loads. A key differentiator is the low quiescent power consumption across all Intel IMVP 9.3 power states.
To streamline the development cycle, configurations can be programmed directly into the controller’s Multi-Time Programmable Memory (MTP) via a GUI. This eliminates the need for manual solder rework during the tuning phase and reduces the overall bill of materials (BOM). The solution reaches peak performance when paired with the AOZ52986QI Smart Power Stage (SPS). The devices are integrated in 3x4 QFN packages with a symmetrical pinout. The supply range spans from 2.7 V to 22 V, while the continuous output current is 45 A (up to 80 A peak).

Distribution Agreement for GaN Devices

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epc-co.com

Industry News
2026-05-18

Efficient Power Conversion (EPC) announced a global distribution agreement with Mouser Electronics. This partnership will see Mouser Electronics distribute EPC’s complete portfolio of eGaN® FETS and ICs. This agreement will give Mouser’s customers the opportunity to use the latest EPC GaN technology devices in their designs, enabling the development of smaller, faster, and more efficient power conversion systems across a broad range of applications, including power converters, motor drives for eMobility, robotics and drones.

Swiss Company acquires Chinese Developer of high-voltage Circuit Protection Solutions

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schurter.com

Industry News
2026-05-13

SCHURTER has completed its acquisition of Biaodi, a China-based developer of high-voltage circuit protection solutions for electric vehicles and new energy applications. Biaodi’s product portfolio significantly expands SCHURTER’s high-voltage offering and includes fuses for EV onboard mobility applications, pyrotechnic (pyro) fuses for safe disconnection in electric vehicle applications as well as AC fuses for charging stations, energy storage systems, data centers, wind power and other high-current applications.

Copper Nano-Paste for pressureless Die Attach in Power Semiconductors

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elephantech.com

Product Release
2026-05-12

Elephantech has added SAphire™ D02 to its SAphire™ low-temperature sintering copper nano-paste lineup, designed for pressureless die attach applications. This enhances manufacturing process flexibility and addresses thermal management issues in the power semiconductor field, including not only die attach but also Thermal Interface Materials (TIMs). In power semiconductor packaging, not only die attach between semiconductor chips and substrates, TIMs used to bond substrates and heat dissipation plates also play a critical part. As die attach is relatively easy to handle due to its small size matching the chip, TIM bonding areas between substrates and heat dissipation plates are significantly larger, making it difficult to apply strong pressure evenly, raising a stronger demand for TIMs applications’ pressureless capability. For instance, for a pressure-assisted production process that requires a bonding condition of 20 MPa, the force applied to the 5 mm square die attach is 500 N (approximately 51 kg), while the force for a 50 mm square TIM will be 50 kN (approximately 5.1 tons).

Non-isolated Buck-Boost DC/DC Converters with up to 99 % Efficiency

Learn more:
lambda.tdk.com

Product Release
2026-05-12

The TDK-Lambda i9C series is a 1500 W non-isolated DC/DC buck-boost power module designed to maximize system efficiency, reduce thermal stress, and extend battery runtime in demanding industrial and battery-powered applications. The i9C series launches with a 9 – 80 V input, 9.6 – 60 V output model delivering up to 30 A. A second configuration supporting a 9 – 40 V input range with 5 – 36 V output and up to 50 A is planned to follow. At the core of the i9C series is TDK-Lambda’s patented programmable high-efficiency pass-through (PHEPT) technology. PHEPT allows designers to define an input-voltage window in which the module bypasses regulation and directly connects the input to the output, eliminating switching and conversion losses. When operating in this mode, efficiency can reach up to 99 %, significantly reducing heat generation and improving system reliability for engineers, particularly those designing battery-powered systems. The i9C is packaged in a compact, wide quarter-brick form factor with an integral baseplate that supports convection, conduction, or forced-air cooling. Standard control and protection features include negative-logic on/off control, power-good, remote sense, user-adjustable overcurrent protection, low-power sleep mode, and full auto-recovery protection. The user-configurable sleep mode programs the power module into a low-power dissipation state during idle or light-load conditions. The i9C series is designed for use in industrial, communications, test and measurement, and battery-powered applications, including AGVs, AMRs, commercial drones, and humanoid robotics. The modules are certified to IEC/UL/CSA/EN 62368-1 safety standards and carry CE and UKCA markings for the Low Voltage, EMC, and RoHS Directives.

80 V N-channel MOSFET support 48 V Automotive Systems

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toshiba.semicon-storage.com

Product Release
2026-05-12

Toshiba Electronics Europe introduced two AEC-Q101 compliant 80 V N-channel MOSFETs supporting 48 V automotive systems. The XPH2R608QB and XPH3R908QB are the first products from the latest-generation U-MOSX-H process to be housed in the SOP Advance (WF) package with wettable flanks. The R_DS(ON) for the XPH2R608QB is 2.55 mΩ (max.) with a total gate charge (Q_g) of 95 nC (typ.), and 3.9 mΩ (max.) and 63 nC (typ.) for the XPH3R908QB – both with a gate-to-source voltage (V_GS) of 10 V (max.). Additionally, the SOP WF package with a copper connector structure reduces MOSFET package resistance, improving efficiency, enhancing heat dissipation, and increasing system reliability. The wettable flank design of the package enhances the visibility of solder fillets, making it easier to verify board mounting conditions using automated optical inspection (AOI) equipment, improving overall system reliability. The XPH2R608QB and XPH3R908QB are suitable for use in N-channel type brushless DC motor drive and non-isolated DC/DC buck converter circuits. In addition to 28 V automotive systems, other applications include motor drives, switching power supplies, and load switches.

All Battery New Energy Vessel in China

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dukosi.com

Industry News
2026-05-12

Dukosi announces the launch of China’s first all-battery new energy vessel equipped with the Dukosi Cell Monitoring System (DKCMS®). The all-battery vessel features a contactless battery management system (BMS) developed by Guangxi Yichuan Intelligent Technology ("Yichuan") powered by lithium-ion battery cells supplied by Eikto New Energy. The adoption of battery power of China’s rivers and inland waterways is primarily driven by national "Dual Carbon" goals and the aspiration to reduce pollution. With over 127,000 km of navigable rivers and canals, China operates the world’s largest business inland waterway system. Eikto has developed DKCMS-based battery management system (BMS) for marine applications that meet stringent safety standards required for type approval certification. The flexibility and scalability of the DKCMS contactless architecture allows Yichuan to cost-efficiently develop and validate class-leading battery systems for a wide range of vessels and power demands and accelerate their time to market.

High-Power Modules for High-Voltage Energy Systems

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infineon.com

Product Release
2026-05-11

Infineon Technologies expands its XHP™ 2 power module portfolio with variants incorporating CoolSiC™ MOSFETs 2300 V, designed for high-voltage power systems. These 2300 V class devices support DC-link voltages of up to 1500 V, addressing the industry trend toward higher system voltages. The modules are available in several variants, offering on-resistance (R_DS(on)) values ranging from 1 mΩ to 2 mΩ and isolation voltages of 4 kV or 6 kV. By leveraging silicon carbide technology, the devices reduce both switching and conduction losses compared to conventional silicon-based solutions. This enables inverters to achieve higher efficiency and power density, or to operate at higher switching frequencies to reduce harmonics and system size. The XHP 2 CoolSiC MOSFET modules are well suited for renewable energy applications, including wind, photovoltaic and battery storage systems. Implemented in the XHP 2 package, the modules feature symmetrical switching behavior for direct paralleling in large power converters and offer a standardized platform that enables developers to balance efficiency and performance according to application requirements. All variants integrate Infineon’s .XT interconnection technology, focusing reliability and extended operational lifetime. The modules are also available with a pre-applied thermal interface material, simplifying assembly while supporting consistent thermal performance. These characteristics translate into measurable system-level benefits. In a wind power demonstration system, a power density of 300 kW/l was achieved, while tests in battery storage systems showed semiconductor losses of less than 0.7 percent of the output power.

Copper Conductors for High-Power Transformers and Motors

Learn more:
hirect.com

Product Release
2026-05-07

Hirect now delivers Continuously Transposed Conductors (CTC), Paper Insulated Copper Conductors (PICC), and Enameled Paper Insulated Copper Conductors (EPICC) - all manufactured at Hirect’s copper processing plant for transformers, traction motors, and other high-power wound components. The conductors are designed to support key infrastructure segments including power grids, railway rolling stock and catenary power supply systems, and industrial power networks. The continuously transposed conductors (CTC) are aimed for high-efficiency transformers, handling 5 to 63 strands per conductor. Strand dimensions range from 2.5 mm to 12.0 mm in width and 1.0 mm to 5.0 mm in thickness, with transposition pitches adjustable from 25 mm to 200 mm. The PICC and EPICC (Paper Insulated Conductor) lines accommodate copper widths up to 20 mm and thicknesses up to 8 mm. Overall insulation thickness is precisely controlled between 0.25 mm and 5 mm.

Fast Charging Company gets Funding and expands into India

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nyobolt.com

Industry News
2026-05-06

Nyobolt announced it has raised $60 million in funding to accelerate its development pipeline and bring its power performance solutions to the autonomous machines that need them most. The round was led by Symbotic, a company in AI-enabled robotics technology for the supply chain, with participation from IQ Capital, Latitude (Phoenix Court), Scania Invest and CBMM. In data centers GPU racks running large-scale AI workloads generate intense transient power demands that legacy UPS infrastructure was never designed to handle. Nyobolt’s fast charging technology is built for these environments, where downtime is not an option and performance cannot be compromised. For example, in Symbotic’s SymBot™ autonomous mobile robots Nyobolt’s performance battery delivers six times more energy capacity than the ultracapacitors previously used, while is 40% lighter, and achieves at least ten times the cycle life of traditional Lithium-Ion technology, enabling continuous, high-intensity 24/7 operations across Symbotic’s warehouse deployments. Nyobolt is also expanding its footprint into India, signing a Memorandum of Understanding with the state of Rajasthan to bring more than 100 MW of off-grid AI data centers and power management infrastructure to one of the world’s fastest-growing digital economies. The Rajasthan partnership marks the first of what Nyobolt expects to be a broader presence across multiple Indian states, with a particular focus on renewable energy integration and grid-independent energy storage.

SMT Flat-Wire Inductor for Automotive Electronics

Learn more:
we-online.com

Product Release
2026-05-05

Würth Elektronik introduces its WE-SFIA series of flat-wire inductors in 2010, 2013, and 2016 packages. Operating in the temperature range from -40 °C to +180 °C the inductors are available as catalogue components but can also be adapted to meet customer-specific requirements. The WE-SFIA inductors are designed for high-efficiency DC/DC converters in the automotive field, such as single- and multiphase converters, as well as buck and boost converters with high saturation currents of up to 150 A. Other filter choke applications include battery management, motor, audio, and infotainment systems. Flat-wire technology used in the chokes offer several advantages: It is mechanically more robust and enables tighter, more even windings as well as improved heat dissipation. Flat-wire windings also offer a larger cross-sectional area, thus reducing electrical resistance. This results in a higher current-carrying capacity, which provides significant advantages in handling transient current peaks. AC losses, such as the skin effect, are also significantly lower in high-frequency applications than in comparable round-wire variants. The flat-wire inductors are available with values from 0.33 μH to 4.7 μH.

European Project develops next Generation of On-Board Chargers

Learn more:
izm.fraunhofer.de

Industry News
2026-05-05

The HiPower 5.0 consortium, overseen by the Fraunhofer Institute for Reliability and Microintegration IZM, has produced a 22 kW OBC (on-board charger) with a total volume of four liters, which is far smaller than the current market average of twelve liters. This OBC is based on bidirectional GaN semiconductors from Infineon. The goal of the HiPower 5.0 consortium is to harness the advantages of modern GaN and wide-bandgap semiconductors in market-ready products within a fully European value chain. In addition to the automotive sector, the consortium is also addressing applications in the marine shipping industry. The HiPower 5.0 project brings together partners from ten European nations, including two OEMs, 21 tier-1 and tier-2 suppliers, six specialists for power electronics, ten universities, and seven research institutions. From August 2025 to June 2028, they have been working on six use cases, supported by 33.7 million Euro in funding from the EU and its member states. The German Federal Ministry of Research, Technology, and Space is contributing 5.74 million Euro and the Free State of Saxony is contributing 0.12 million Euro.

Film Capacitors for High-Frequency Power Electronics

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ecicaps.com

Product Release
2026-05-05

Converter and inverter designs increasingly operate at higher switching frequencies, placing stricter requirements on passive components. Film capacitors with dry plastic dielectrics offer a combination of low losses, high reliability and stable capacitance over temperature and frequency, making them well suited for DC-link, snubber, coupling, EMC and output filtering applications. A key design factor is the reduction of parasitic elements such as equivalent series inductance (ESL), which directly impacts switching behavior, EMI performance and thermal stress. In this context, self-healing metallized film capacitors provide an additional advantage by improving long-term reliability under dynamic load conditions. To address application-specific challenges, Electronic Concepts Europe applies its PowerPath methodology, focusing on the improvement of geometry, materials and internal design. This enables tailored capacitor solutions that support higher efficiency, reduced component count and improved thermal management.

Protection for AI Servers and High-End GPUs

Learn more:
aosmd.com

Product Release
2026-04-30

Alpha and Omega Semiconductor launched the SmartClamp™ family of protected DrMOS. Designed specifically for the extreme power demands of AI servers, data centers, and high-end graphics cards, the SmartClamp family offers accurate Over Current Protection (OCP) and Negative Current Protection (NCP). The flagship AOZ53228QI provides a special safeguard for multiphase voltage regulators (VRs), preventing catastrophic failures in environments where high peak currents are the norm. Traditional protection methods can suffer from delays; even a mere 50 ns OCP delay can result in a 30 A current runaway, risking permanent damage to the high-side MOSFET - especially when inductor saturation occurs. The SmartClamp family uses current limiting directly within the power stage rather than relying solely on the controller. It provides cycle-by-cycle monitoring utilizing an internal rising-edge current ramp to monitor inductor current in real-time, and it is optimized for industry-standard constant-on-time (COT) and fixed-frequency PWM controllers, as well as the company’s own proprietary AOS Advanced Transient Modulator (A2TM) multiphase controllers. Three models for AI servers, data center and high-end graphics cards deliver 60/70/80 A at 18 V while three versions for Gaming and AI PCs provide 55/60/70 A at a voltage of 25 V.

Broadband Amplifier now for Power Classes up to 1000 W

Learn more:
rohde-schwarz.com

Product Release
2026-04-30

Rohde & Schwarz expanded its R&S®BBA300 family, a series of solid-state broadband amplifiers. With the introduction of the R&S BBA300-DE500 and R&S BBA300-DE1000 models, this amplifier now covers power requirements of 500 W and 1000 W. Designed as single-band solutions, these units cover the entire frequency range from 1 GHz to 6 GHz without band switching, which increases efficiency in automated test sequences. Precise generation of high field strengths is essential, particularly for vehicle component testing, full-vehicle testing, and High-Intensity Radiated Fields (HIRF) applications. The BBA300 family utilizes Solid-State Power Amplifier (SSPA) technology, offering higher availability and robustness compared to traditional Traveling Wave Tube (TWT) amplifiers. The units are designed for several modulation types, from standard amplitude and pulse modulation to complex OFDM signals. The systems are housed in 30U racks pre-configured for mounting horn antennas. To minimize cable loss at high frequencies, the RF output (optimized with 7/16 connector characteristics) is positioned centrally in the rack. This shortens the path to the antenna. The BBA300 family features a modular concept. Existing systems can be expanded or combined with other amplifier families, such as the BBA130/150, to create tailored system solutions.

AC/DC Wall-Mount Adapters for Medical and other Applications

Learn more:
xppower.com

Product Release
2026-04-28

XP Power introduces the AMF60 series of 60 W wall-mount AC/DC power supplies in an IP42-rated enclosure for medical, home healthcare, and industrial applications. The AMF60 series meets DOE Level VI energy efficiency requirements, is ready for Level VII, and complies with EU2019/1782 for external power supplies, with no-load power consumption below 0.15 W. The series provides four output voltage models, 12 V, 15 V, 19 V, and 24 V_DC, and is specifically designed for applications in respiratory care, patient monitoring, diagnostic equipment, imaging systems and test & measurement. A 80 to 264 V_AC input range supports global operation. Interchangeable AC input plugs for use in North America, Europe, the UK, and China are available, allowing a single platform to be used across regions. The AMF60 series complies with medical and ITE safety standards, including ANSI/AAMI ES60601-1, EN60601-1, EN60601-1-11, IEC60601-1, IEC60601-1-11, and UL/IEC/EN62368-1. The units feature Class II construction, reinforced insulation, and 2 x MOPP isolation (4000 V_AC input-to-output), with patient leakage current of 90 μA, supporting integration into BF-rated medical applications. Compliance with Class B conducted and radiated emissions (EN55032/EN55011) can remove the need for external EMC filtering. Additional features include 200 mV pk-pk ripple and noise for a stable DC output, and overvoltage and overload protection with auto-recovery to protect both the power supply and connected equipment. The units operate over a temperature range of 0 to +60 °C and have an MTBF of 200,000 hours (MIL-HDBK-217F).

TVS Diodes for Automotive Power Protection

Learn more:
littelfuse.com

Product Release
2026-04-28

Littlefuse launched its TPSMC, TPSMD, and TP5.0SMDJ high-voltage transient voltage suppression (TVS) diode series, expanding the TP Series portfolio with devices specifically engineered for automotive high-voltage power electronics applications including battery disconnect units (BDUs), high-voltage HVAC systems, and positive temperature coefficient (PTC) heaters. These TVS diodes deliver standoff voltages up to 400 V supporting surge currents up to 300 A and peak pulse power up to 5 kW, while providing a response time of typically less than 1 ps. The devices are AEC-Q101 qualified and PPAP capable for automotive reliability requirements. Integrated in DO-214AB (SMC) surface-mount packages the devices are IEC-61000-4-2 ESD-compliant up to 30 kV.

Wireless Power Chipset for Wearables

Learn more:
rohm.com

Product Release
2026-04-28

ROHM has developed a wireless power supply IC chipset consisting of the receiver - ML7670 - and transmitter - ML7671 - compatible with Near Field Communication (NFC) technology for compact wearables such as smart rings and smart bands as well as peripheral devices like smart pens. This chipset builds on the ML7660 receiver and ML7661transmitter. The maximum power transfer is specified at 250 mW, while peripheral components such as the switching MOSFETs required to supply power to the charging IC are built in. The ML7670 power receiver achieves a maximum power transfer efficiency of 45 % in the 250 mW low output range in a package measuring 2.28 mm × 2.56 mm × 0.48 mm. All firmware required for wireless power delivery is embedded directly within the IC, eliminating the need for a host MCU. Compliance with NFC Forum (WLC 2.0) enables power transfer while maintaining compatibility with existing devices. Evaluation boards and reference designs are also offered to facilitate integration.

Strategic Collaboration for 900 V EV Platforms

Learn more:
onsemi.com

Industry News
2026-04-27

Onsemi announced an expanded strategic collaboration with NIO to power next-generation electric vehicle (EV) platforms. Building on a multi-year partnership, the companies are more closely engaging to accelerate NIO’s transition from 400 V to 900 V architectures by using onsemi’s EliteSiC M3e technology. The expanded collaboration builds on a partnership, which began with onsemi’s EliteSiC technology supporting NIO’s 400 V platforms and has evolved into a strategic, system-level alignment. Today, onsemi’s EliteSiC technology underpins NIO’s transition to 900 V architectures, including its latest flagship SUV, the ES9, and additional model. The companies’ collaboration reflects a broader shift in the auto industry toward closer alignment between automakers and semiconductor companies, as vehicles become more power-intensive. By supporting system-level integration, onsemi is helping customers bring scalable, higher-performance electric vehicle platforms to market more quickly and efficiently while reducing development complexity and accelerating execution. This approach is becoming increasingly important as automakers transition to higher-voltage architectures and more advanced electric drive systems.

Discrete Power Solutions

Learn more:
recom-power.com

Product Release
2026-04-22

RECOM introduces power ICs and SMD transformers, enabling customers to design their own discrete DC/DC isolated power supplies. The range includes three different topology transformer drivers – flyback, push-pull, and full bridge, integrated and external MOSFET secondary side rectification solutions, and a range of standard sub-miniature SMD transformers that cover the most common input/output and isolation voltages. The RVPWxxx series flyback power ICs are available with either integrated switches or with a gate drive output for an external MOSFET. These wide input voltage range regulated ICs have three different feedback modes on the same pin: Primary Side Regulation, where the output is regulated by monitoring the primary side waveform to avoid the need for an optocoupler, Secondary Side Regulation, where the output is regulated by optocoupler feedback to maintain the isolation, or Direct DC monitoring for non-isolated applications. The RVPxxx Push-Pull and Full-Bridge transformer drivers are available in DFN2*2 packages. They incorporate all the timing circuits and overcurrent monitoring functions. The heart of any isolated DC/DC converter is the transformer, so RECOM offers a standard range of SMD transformers with isolations from 1.5 kV_DC up to 5 kV_AC ; custom transformers according to individual specifications are also possible. RECOM also offers the RVSxxx range of secondary side rectification solutions including a fully integrated full bridge rectifier IC in a DFN2*2 package, a self-powered external MOSFET rectifier solution that can operate either high side or low side, and a bidirectional integrated rectifier designed for battery cell charging/discharging.

Production Start for third Generation of SiC Devices

Learn more:
bosch.com

Industry News
2026-04-22

Bosch has started to introduce its third-generation silicon carbide chips and is supplying samples to global automakers. Bosch has invested around 3 billion euros in semiconductors as part of Europe’s IPCEI (Important Projects of Common European Interest) funding programs for microelectronics and communication technology. Its wafer fab in Reutlingen, Germany, develops and manufactures the third generation SiC chips on 200-millimeter wafers. In September 2023, Bosch acquired a second fab for SiC chip manufacturing in Roseville, California, and is currently equipping it with production facilities. The company is investing an additional 1.9 billion US-Dollar in the U.S. plant, which plans to manufacture and deliver its first SiC chips this year – initially as samples for customer trials. Originally developed for sensors, the so-called "Bosch process" enables manufacturing of high-precision vertical structures in silicon carbide. This design increases the chips’ power density – a decisive factor for the third generation’s performance. Analyses by the market research and consulting company Yole Intelligence forecast that the global market for SiC power semiconductors will grow from 2.3 billion U.S. dollars in 2023 to around 9.2 billion U.S. dollars by 2029, driven primarily by electromobility.

5th Generation SiC MOSFETs

Learn more:
rohm.com

Product Release
2026-04-21

ROHM has developed the latest device of its EcoSiC™ series: the 5th Generation SiC MOSFETs for high-efficiency power applications. This technology is suitable for e. g. xEV traction inverters, onboard chargers (OBCs), DC/DC converters and electric compressors in automotive applications as well as for industrial equipment where it fits into power supplies for AI servers and data centers, PV inverters, ESS (Energy Storage Systems), UPS (Uninterruptible Power Supplies), eVTOL, AC servos etc. The ON resistance of the 5th Generation SiC is reduced by approximately 30 % during high temperature operation (T_j = 175 °C) compared to conventional 4th Generation products (under the same breakdown voltage and chip size conditions).

1-Cell Li-ion Battery Protection IC for use with Low-Side MOSFETs

Learn more:
nisshinbo-microdevices.co.jp

Product Release
2026-04-20

Nisshinbo Micro Devices released the NB7130 single-cell Li-ion battery protection ICs in a WLCSP-8-ZA1 package for applications including hearing aids and wearable devices, smartphones, and handheld data terminals. The NB7130 is equipped with all standard safety features, such as overcharge/over-discharge voltage, charge/discharge overcurrent and short circuit detection. The additional safety measures are mainly focussed on the detection range and improved accuracy level of these measurements, which is particularly important for small devices worn on the human body to prevent unintentional injuries when the Li-ion battery may fail. It provides overcharge and over-discharge detection (OVP & UVP), overcurrent detection (OCP) and a low current sense voltage. Using a small (R_sens) current-sense resistor causes lower heat generation at high currents. Charging a deeply discharged battery from 0 V can cause an internal short circuit; therefore, the inhibition threshold voltage can be set in a 0.001 V step rate from a safety perspective. A T_IN pin is available to connect a thermal sensor to monitor the temperature of the battery cell. An additional STB input offers a Forced Standby Function to set the product into a standby mode. The supply current in normal mode is 3.00 μA / Max. 6.00 μA and max 0.04 μA in standby mode.

Pooling Microelectronics Expertise in Northern Germany

Learn more:
northernchipnetwork.de

Industry News
2026-04-20

With the launch of the Northern Chip Network e.V. (NCN) at DESY in Hamburg/Germany, companies, universities, research institutions, and innovation partners from the Hamburg and Schleswig-Holstein region are pooling their expertise to strengthen collaboration, initiate partnerships, and further enhance the region’s competitiveness, innovative abilities, and visibility. The network aims to more closely link existing strengths in research, education, and industry. Northern Germany possesses expertise across the entire microelectronics value chain - from university education and basic research, through process, product, and technology development, to industrial semiconductor manufacturing. At launch, the NCN includes global industrial companies such as Nexperia, NXP Semiconductors, Semikron Danfoss, Vishay Siliconix Itzehoe GmbH, and X-FAB MEMS Foundry Itzehoe. In addition, there are research partners such as the DESY, the Fraunhofer Institute for Silicon Technology (ISIT), universities such as Kiel University (CAU), the Kiel University of Applied Sciences, and the Hamburg University of Technology (TUHH); as well as key regional innovation and sustainability partners such as the Itzehoe Innovation Center (IZET), the Hamburg Renewable Energy Cluster (EEHH), and the Schleswig-Holstein Society for Energy & Climate Protection (EKSH). As an open network, the Northern Chip Network invites other interested companies, universities, research institutions and regional stakeholders to contribute to its future work.

Dynamic High Power DC E-Load

Learn more:
itechate.com

Product Release
2026-04-20

ITECH launched the IT8100A/E Series Ultra-Dynamic High Power DC E-Load. Designed for high power density, the IT8100A/E series deliver up to 7.2 kW in a compact 3U chassis (150 V model) and can scale to 1.8 MW through fiber-optic master-slave paralleling, meeting high-voltage and high-current testing requirements. Available in 60 V, 150 V, 600 V, and 1200 V ranges, with standalone power from 2 kW to 86.4 kW, the series features several operating modes – including dynamic, sequence, and advanced loading functions – for performance in applications such as Al server power supplies, power modules, fuel cells, EV charging station, solar array and power electronics. It offers a current slew rate up to 150 A/μs per unit. With 1.5× short-time overloading capability (≤60 s, Ta ≤ 25 °C), it covers transient peak power demands during testing and enables system sizing based on typical operating power rather than peak power, meeting the requirements of power modules, battery packs, and other devices under surge and extreme operating conditions.

President of ESIA appointed

Learn more:
eusemiconductors.eu/esia

People
2026-04-20

The General Assembly of the European Semiconductor Industry Association (ESIA) elected Erik Rein, Executive Vice President and Board Member Mobility Electronics responsible for semiconductor business at Bosch, as the organisation’s new President. He succeeds Michael Budde, who has stepped down from the ESIA Presidency following his recent change of responsibilities within Bosch. Erik Rein has worked in semiconductor-based mobility solutions, manufacturing, purchasing, and quality management. In his position, he is responsible for Bosch’s global semiconductor and sensor business.

Expanded Capacity for Validation and Services in China

Learn more:
we-online.com

Industry News
2026-04-16

Würth Elektronik eiSos Group opened the Laboratory Phase II at its Asia Quality Design Center (QDC Asia) in Shenzhen, China. Established in August 2008, QDC Asia spans approximately 4,700 m², with a dedicated testing area of 1,700 m² housing over 300 pieces of high-precision testing equipment. Operating in strict compliance with ISO/IEC 17025 and ISO/IEC 17043 standards, the center holds accreditations as a testing laboratory, a proficiency testing provider, and a lab recognized by VDE (TDAP), UL (WTDP), and IEC (CTF2). Initially focused on pre-shipment product inspection for production, the Laboratory has evolved into a comprehensive testing center offering a wide range of services including product incoming inspection testing, design change validation, reliability testing, product conformity judgment, material compliance, failure analysis, etc. However, with existing lab space maximized and approaching saturation, expansion became imperative to support the Group’s growing business needs. The newly added 352 m² laboratory is a strategic response to this demand. Primarily designed for environmental and electrical performance testing, the facility is equipped with an energy-efficient VFD chiller featuring magnetic bearing technology, as well as a scalable electrical system capable of meeting peak load demands. A total of 38 testing devices will be gradually deployed across phases to align with actual business needs: 19 units on the ground floor, followed by an additional 19 on a second level. The expansion thus lays the foundation for a significant increase in capacity: In future, throughput for environmental testing is expected to grow by 170 percent compared to current capacity.

Automotive Power Module with integrated MCU and Gate Driver for Three-Phase BLDC Motor Control

Learn more:
toshiba.semicon-storage.com

Product Release
2026-04-16

Toshiba Electronics Europe begins engineering sample shipments of the AEC-Q100 compliant TB9M030FG, an addition to the SmartMCD™ series that integrates a microcontroller (MCU) and motor driver. The product is suitable for low-speed, sensorless field-oriented control (FOC) of BLDC motors in automotive applications, including electric water pumps, oil pumps, fans, and blowers. Sensorless control of three-phase BLDC motors presents challenges in accurately detecting rotor position at low speeds, creating a strong demand for high-performance sensorless FOC technology capable of delivering stable control from a standstill. The TB9M030FG integrates a 32-bit MCU with an Arm® Cortex®-M0 core, 64 kB flash memory and an additional 12 kB of ROM and 4 kB of RAM. The gate driver controls and drives the N-channel power MOSFETs for three-phase BLDC motor operation. The product also features a vector engine co-processor, a LIN transceiver and a power system that can operate at automotive battery levels. The device is housed in a QFP48 package, measuring 9 mm × 9 mm. Toshiba’s sensorless control technology enables position FOC control from zero speed through the low-speed range when used with PM-Synchronous motors, i.e. three-phase BLDC motors with magnetic anisotropy in the rotor (L_d ≠ L_q), allowing the generation of reluctance torque due to differences in magnetic reluctance within the motor. Compared with the conventional high-frequency injection method, in which the voltage (or current) signal is superimposed and injected into the motor to detect rotor position, this approach eliminates noise caused by harmonic injection and also leads to quieter motor operation.

Desktop Power Supply for Medical and Industrial Applications

Learn more:
mascot.no

Product Release
2026-04-15

Mascot has introduced the 4320 desktop power supply designed for use across medical, industrial and professional environments. Delivering up to 80 W of output power, it features a universal input range of 90 - 264 VAC and is available with fixed output voltages spanning 12, 16, 24, 48 and 64 V as standard, with a 5 V version and other user-defined outputs available on request. The switching frequency is approximately 65 kHz. Both short-circuit and thermal protection are incorporated to protect critical power supply components from electrical anomalies that have the potential to cause failure or damage, a particularly important attribute in medical and other reliability-critical applications. 4320 is medically certified to IEC 60601-1 edition 3.1 and 3.2, while also meeting IEC 60601-1-11 requirements for home healthcare environments. EMC performance is aligned with IEC/EN 60601-1-2 edition 4.1 for safe and stable operation in crowded electronic environments. In addition, the 4320 complies with IEC 62368-1 and IEC 60335-1, making it suitable for a wide range of household, AV and ICT applications. The 4320 features a standard 2-pin IEC 60320 (C8) input, with options for 3-pin connectors or fixed mains cords. On the DC side, exchangeable plug solutions are available, supported by standard cord sets or user-specific configurations, enabling straightforward adaptation for different use cases. Furthermore, Mascot offers customisation capabilities for the 4320 series. Accessories for the 4320 series include a wall-mount bracket, 2-pin AC cords, exchangeable DC plugs (individual or in packs) and exchangeable DC push-on terminals.

Third-Generation 1500 W wide-range AC/DC Power Modules

Learn more:
lambda.tdk.com

Product Release
2026-04-14

TDK Corporation introduced the TDK-Lambda 1500 W rated PFE1500FB AC/DC power modules. This third-generation series accepts a wide 85 to 305 V_AC input range, providing the ability to operate on a 277 V_AC nominal input to power industrial, lighting, and building automation equipment. The module’s metal baseplate allows operation where convection or forced air cooling is not feasible, with the ability to be mounted in a sealed outdoor enclosure or where liquid-cooling is preferred. The five-sided case also provides easier thermal management and lower radiated EMI. The PFE1500FB features a PMBus interface with read/write capability, enabling remote monitoring and programming. This includes output voltage, overvoltage, overcurrent, and undervoltage adjustment. Modules can be connected in parallel for higher output current using the droop mode current share, which can also be programmed using the PMBus. Other signals and functions include remote on/off, a power good signal and a 9.5 - 14 V, 200 mA auxiliary voltage. The output voltage adjustment range is 38.4 - 57.6 with typical efficiencies of 92 % at 230 V_AC input. The no-load power consumption is 2 W with the output voltage enable toggled to "off". Overall dimensions for the power module are 157.2 mm × 89.9 mm × 15.2 mm (L × W × H) and the "weight" is 540 g. Safety certifications include IEC/UL/CSA/EN62368-1 and carry the CE and UKCA marking for the Low Voltage, EMC and RoHS Directives. The units also comply with EN55032-A with external filtering, meeting the IEC 61000-4 immunity standards. The power supply has 3000 V_AC input to output, 2500 V_AC input to ground, and 1500 V_DC output to ground isolation.

Intelligent Power Modules from India

Learn more:
aosmd.com

Industry News
2026-04-14

In presence of India’s Prime Minister, Mr. Narendra Modi, Alpha and Omega Semiconductor (AOS) has officially inaugurated its Kaynes Semicon’s OSAT facility in Sanand, Gujarat. Now AOS’ proprietary IPM5 manufacturing process is implemented at the Sanand facility. The IPM5 (Intelligent Power Modules) integrate 17 different dies into a single package, providing the core "intelligence" for next-generation motor controls and energy-efficient appliances. From groundbreaking to product delivery it took 14 months to establish the facility.

5 kW GaN 3-Phase Inverters for Robotics and Light Evs

Learn more:
epc-co.com

Product Release
2026-04-14

Efficient Power Conversion (EPC) introduced the EPC9186HC2 and EPC9186HC3 evaluation boards, two high-performance 3-phase BLDC motor drive inverter platforms designed for applications including robotics, industrial automation, light electric vehicles, electric scooters, forklifts, agricultural machinery, battery-powered mobility systems, and high-power drones. Supporting motor drive systems up to 5 kW, the boards enable engineers to evaluate compact, high-efficiency inverter architectures based on 100 V EPC2361 eGaN® FET technology. The EPC9186HC2 and EPC9186HC3 are based on the EPC9186 platform that was released earlier and have the same hardware architecture. They have another power stage made up of EPC2361 GaN devices that improves conduction performance and allows for higher-current and lower cost operation in motion-control environments. The EPC9186HC2 integrates two EPC2361 eGaN FETs in parallel per switch position, while the EPC9186HC3 uses three devices in parallel, further reducing equivalent on-resistance and improving efficiency at higher load currents. The boards support phase currents up to 150 A_RMS, depending on the selected current-sensing configuration, and PWM switching frequencies up to 120 kHz, enabling evaluation of high-density motor drive solutions with fast switching transitions and improved system responsiveness. The inverter platforms operate across a DC input range up to 76 V and feature switching behavior with dv/dt around 6 V/ns, helping reduce torque ripple and acoustic noise in precision motor drive applications. The boards integrate key functions required for three-phase inverter evaluation - including gate drivers, high-bandwidth phase-current sensing, voltage monitoring, housekeeping power supplies, and protection features such as over-current detection and input undervoltage lockout.

300 mm Fab: First Tool Move-In in Itzehoe

Learn more:
siconnex.com

Industry News
2026-04-13

At Vishay’s facility in Itzehoe/Germany the first tools have moved in – kicking off with fully automated wet chemistry equipment from Siconnex. Using spezialized equipment, the Siconnex equipment were set into their final footprints in this 300 mm fab. Vishay is setting up a fully automated production line dedicated to automotive MOSFETs. By taking this strategic step in Europe, Vishay is sending a decisive signal regarding supply security for the European automotive sector. In an era where "supply chain sovereignty" has become the defining priority, this expansion is set to create approximately 150 new jobs at the facility. The systems, custom-tailored for Vishay, are specifically configured for metallic etching (AlCu) and post-dry-etch polymer removal. Siconnex got this position primarily due to its BATCHSPRAY® technology, which delivers in critical areas like footprint efficiency, resource management as well as automation & safety.

PCIM Expo & Conference 2026: Discover the Future of Power Electronics

Learn more:
pcim.mesago.com

Event News
2026-04-13

From 9 – 11 June 2026, Nuremberg will once again become the international hub for power electronics. The PCIM Expo & Conference brings together experts from around the world to discuss the latest developments and future trends in the industry. The event provides a comprehensive overview of the innovative products, solutions, and trends that will help shape the power electronics industry in the future. This year, for the first time, a new stage will shine a light on the topic of artificial intelligence and data centers. The E-Mobility & Energy Storage Stage will focus on current and future developments in power electronics for use in electromobility and energy storage. At the PCIM Expo 2026, the University Research Zone will offer exclusive access to the most recent findings from power electronics research. Each day will feature different universities and research institutes offering insights into the latest developments from the world of research. Across approximately 40,000 square meters of exhibition space, more than 650 companies from 27 countries will be showcasing their newest and most tried-and-tested technologies.

OCP and Current/OS: Strategic Alliance to Enable DC Adoption in AI Data Centers

Learn more:
currentos.org

Industry News
2026-04-09

The Current/OS Foundation highlights the progress of its strategic collaboration with the Open Compute Project Foundation (OCP), concluded through the signing of an alliance aimed at accelerating the development of Direct Current-powered data center architectures. The foundation aims to drive industry alignment around DC solutions for AI-driven infrastructures, reflecting a shared ambition to transform digital infrastructures into more efficient, sustainable, and high-performance systems, and to establish new standards for the electrical architecture of next-generation data centers. The collaboration is structured around several key deliverables including a comprehensive white paper, Data Center Facility – Low Voltage Direct Current Power Distribution, detailing architectures and best practices for scalable AI infrastructure. It is complemented by a training program available in the OCP Academy to educate engineers and professionals on open-standard system design and deployment and it also includes a formal specification document defining technical requirements, interfaces, and interoperability standards to enable vendor-agnostic innovation. The alliance between Current/OS and OCP aims to promote the adoption of open standards for DC architectures in data centers and to unite an ecosystem of industrial, technological, and academic stakeholders around this transition, addressing the growing challenges of power consumption, performance, and sustainability. The two organizations will work to reduce electrical conversion stages, increase power density for AI workloads, and enhance infrastructure resilience while simplifying electrical architectures. The initiative also aligns with open and interoperable standards to foster innovation, industrial adoption, and compatibility across the ecosystem.

Power Modules for Traction Inverters

Learn more:
starpowereurope.com

Product Release
2026-04-08

StarPower expands its portfolio with half-bridge and three-phase bridge modules for electric drive systems. The solutions are based on the company’s latest chip generation. For example, a family of transfer-molded half-bridge modules designed for traction inverters in power classes starting from 250 kW. These modules are available in both silicon and silicon carbide technologies and utilize the latest Gen3 trench IGBT generation as well as second-generation SiC MOSFETs with conduction losses reaching down to 1.3 mμ R_DS(on) at module level. Si₃N₄ AMB substrates combined with a pin-fin baseplate design enhance heat dissipation. The product range includes 750 V and 1200 V variants, featuring Gen3 IGBT modules rated at 750 A_rms and 900 A_rms, as well as 450 A_rms and 500 A_rms. SiC versions are available with R_DS(on) values of 1.4 mΩ and 1.0 mΩ, as well as 1.8 mΩ and 1.3 mΩ. In addition, StarPower expands its portfolio of encapsulated three-phase bridge modules for traction inverters in the low- and medium-power range. These modules use SiC MOSFETs, offering losses starting from 2 mΩ R_DS(on). The combination of Si₃N₄ AMB substrates and a pin-fin baseplate enhance thermal robustness; an integrated current sensor is optionally available. The modules are offered in 750 V and 1200 V versions, including Gen3 IGBT variants rated at 350 A_rms, 380 A_rms, and 300 A_rms. SiC versions are available with R_DS(on) values of 2.3 mΩ and 2.0 mΩ, as well as 3.0 mΩ and 2.0 mΩ.

Senior Vice President and GM appointed

Learn more:
omnionpower.com

People
2026-04-08

OmniOn Power (OmniOn) has appointed Brian Korn as the new Senior Vice President and General Manager of its Core Products business. Korn brings more than 20 years of experience in power products spanning board mounted, front end, and specialized power solutions for data center, telecom, and network infrastructure applications. At OmniOn Power, Korn will be responsible for defining the strategic direction, driving the operational execution, and overseeing the long-term performance of the company’s Core Products business. Korn joins OmniOn from Advanced Energy, where he held senior leadership roles overseeing embedded and front end power products for key growth industries. Earlier in his career, he led product and business teams at Cisco Systems, Equinix, Sun Microsystems, and Silicon Graphics.

Strategic Agreement for Critical Metals Recovery

Learn more:
indium.com

Industry News
2026-04-03

Indium Corporation® has executed a long-term offtake framework agreement with Flash Metals USA Inc., a wholly owned subsidiary of Metallium Limited (MTM), for the supply of critical metals recovered using Metallium’s Flash Joule Heating technology. Under the agreement, Indium will purchase metals recovered from secondary raw materials and electronic scrap through Flash Metals USA’s recycling operations, including gallium, germanium, copper, tin, gold, and indium. The agreement, with an initial term of 10 years with automatic five-year renewal options, establishes a robust and diversified supply chain for U.S.-based recovery of strategic metals. Indium Corporation operates its own metals and compounds reclaim and recycle program that provides specialized recycling services for the electronics, semiconductor, display, battery, and other specialty material industries.

100 V Integrated GaN Power Stages

Learn more:
epc-co.com

Product Release
2026-04-02

Efficient Power Conversion (EPC) has introduced its next generation of 100 V integrated GaN power-stage ICs – EPC23108, EPC23109, EPC23110 and EPC23111 – targeting high-performance motion and power systems such as humanoid robots, drones, and other compact battery-powered platforms. The devices are designed to simplify implementation and improve operational robustness in real-world environments while preserving the efficiency and power-density advantages typical of integrated GaN technology. Each IC integrates the high-side and low-side eGaN® FETs together with the gate driver and level shifting circuitry in a thermally enhanced QFN package. They support operation up to 100 V, with load current capability of 35 A (EPC23108, EPC23109) and 20 A (EPC23110, EPC23111), enabling reliable high-frequency switching performance. The control interface has an active-low fast-shutdown and standby input with a built-in 65 kΩ pull-up, which makes it work with industrial logic standards. As a result, designers can connect the devices directly to standard controllers without having to do any extra signal conditioning. This makes the design easier and makes sure that the devices work the same way on all platforms. Operational safety is improved through deterministic shutdown behavior. When standby is asserted, PWM switching stops immediately and the driver enters a low-quiescent-current state from the VDRV supply. If the driver supply is lost, an active gate pull-down ensures both the high-side and low-side FETs remain off, maintaining system control during fault conditions and enhancing reliability. The family also supports continuous 100% duty-cycle operation, which is necessary for full-torque and uninterrupted conduction modes.

Measurement Day Nuremberg

Learn more:
datatec.eu

Event News
2026-04-02

Experience an exclusive day dedicated to power and high-end measurement technology on April 22, 2026, in Nuremberg at the Max Morlock Stadium. The event features practice-oriented technical presentations, direct exchange with experts, and a tabletop exhibition.

Prototyping Controller for Wide-Bandgap Power Converters

Learn more:
imperix.com

Product Release
2026-04-02

Imperix introduced the B-Box 4, a Rapid Control Prototyping (RCP) system for power electronics. Featuring a proprietary architecture optimized for low-latency operation, the controller delivers advanced control loop speeds and signal fidelity. The device aims to accelerate experimental prototyping activities in both industrial and academic research environments. The B-Box 4 enables 20 MSamples/s synchronous sampling at all analog inputs simultaneously. This captures the full high-frequency content of current ripple or medium-frequency waveforms, and it permits the direct visualization of waveforms without extra instrumentation. Using oversampling, the B-Box 4 is not only a control system but also a monitoring and debugging tool, usable directly from the readily available measurements. It provides a PWM resolution of 250 ps, which is useful for ultra-fast switching applications, especially for techniques relying on phase shift control such as within medium-frequency converters. B-Box 4 can execute the control loop of simple systems in under 2 μs, directly from the CPU. The device is fully integrated into an ecosystem of products designed to accelerate prototyping in power electronics.

High-Voltage Safety Testing Platform

Learn more:
vitrek.com

Product Release
2026-04-01

Vitrek launched the V10X electrical safety hipot tester. Designed for automated, connected production environments, the V10X delivers up to 30 kV AC output, and a 100 pA leakage resolution. It provides a single-platform solution for safety testing of appliances, EV components, cable assemblies, power distribution systems, lighting products, and medical electrical equipment. It is designed for connected production environments where safety testing must generate traceable data, integrate with factory networks, and scale with evolving standards. A graphical touchscreen enables test creation, real-time charting, and built-in PDF and CSV report generation, and barcode support is already integrated. Built-in networking, SCPI-compliant automation interfaces, and control of up to 1,600 switch matrix channels make the system ready for Industry 4.0 production lines. The V10X meets multiple global compliance standards, and is backed by ISO 17025-accredited calibration services.

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Vertically Stacked Packaging Technology in a Half-Bridge Configuration	Alpha and Omega Semiconductor introduced its AOPL6...	13900	Product Release	Vertically Stacked Packaging Technology in a Half-Bridge Configuration	Alpha and Omega Semiconductor introduced its AOPL66801 80V MOSFET in a half-bridge configuration available in a state-of-the-art DFN6x5 AmpStack™ MOSFET package. This breakthrough packaging technology enables high-density designs for various power conversion applications, ranging from next-gen Megawatt AI factories to everyday power tools. Designed to support high power-density requirements, AOS’ packaging uses vertically stacked die technology with two MOSFETs connected as a high-side and low-side MOSFET, forming a half-bridge. This configuration effectively increases power density and maximizes available PCB space compared to a two DFN5x6 discrete MOSFET solution. The AOPL66801 also features an optimized clip design for the switch node connecting the two MOSFETs, which minimizes parasitic inductance between the high-side and low-side MOSFETs. Compared to a standard discrete solution, the AOPL66801 minimizes parasitic inductance on the PCB, reducing phase-node voltage ringing and decreasing stress on the MOSFET. The PCB layout can affect gate-driving performance and degrade switching performance due to parasitic inductance. The AOPL66801 has a Kelvin sense pin that maintains gate-voltage stability during large di/dt switching and provides a more effective drive path for the high side, reducing losses. In addition, AOPL66801 has a maximum junction temperature of 175 °C, providing increased capability. These factors provide significant system-level improvements that support higher power density and increased operational efficiencies.	07.07.2026 12:30:00	Jul	news_2026-07-15_17.jpg	\images\news_2026-07-15_17.jpg	https://www.aosmd.com/news/alpha-and-omega-semiconductor-unveils-ampstack-packaging-leap-forward-mosfet-power-density	aosmd.com
Standard-Level 40 V MOSFETs for Motor Control Circuits	Vishay introduced four V TrenchFET® Gen IV sta...	13897	Product Release	Standard-Level 40 V MOSFETs for Motor Control Circuits	Vishay introduced four V TrenchFET® Gen IV standard-level n-channel power MOSFETs in the 6.15 mm by 5.15 mm PowerPAK® SO-8 single package. Optimized for the noisy environments of motor control circuits, the Vishay Siliconix SIR5402DP, SIR5404DP, SIR5406DP, and SIR5408DP combine a high minimum gate-source threshold voltage of greater than 2.5 V with Q<sub<gd</sub> / Q<sub<gs</sub> ratios of less than 1. The high minimum gate-source threshold voltage of the devices released today prevents false MOSFET triggering induced by the gate in motor control circuits, while their optimized Q<sub>gd</sub> / Q<sub>gs</sub> ratios reduce gate-induced voltage fluctuations and the impact of gate noise. Both characteristics make the devices ideal for providing synchronous rectification and DC/DC conversion in BLDC motors, power tools, drones, and automation systems. The meet the requirements of specific applications, the SIR5402DP, SIR5404DP, SIR5406DP, and SIR5408DP are available with a range of typical on-resistance values from 0.9 mW to 2.5 mW at 10 V, and gate charge values from 32.6 nC to 82 nC. The MOSFETs are 100 % R<sub>G</sub>- and UIS-tested, RoHS-compliant, and halogen-free.	07.07.2026 09:30:00	Jul	news_2026-07-15_14.jpg	\images\news_2026-07-15_14.jpg	https://www.vishay.com/en/company/press/releases/2026/SiR5404DP-et-al/	vishay.com
Hjalti Pall Thorvardarson Appointed Chief Operating Officer	Danisense has appointed Hjalti Pall Thorvardarson ...	13892	People	Hjalti Pall Thorvardarson Appointed Chief Operating Officer	Danisense has appointed Hjalti Pall Thorvardarson as its new Chief Operating Officer (COO), further strengthening the company’s leadership team as it continues to expand its global operations and product portfolio. Thorvardarson brings extensive experience in electronics engineering, operational management and business leadership. A Computer and Electronics Engineer by training, he has built his career within a Danish high-tech SME specializing in functional testing and simulation solutions for the space and defense industry. Progressing from student employee to Hardware Engineer, Project Manager, Department Head and ultimately CEO for the past eight years, he has proven hands-on expertise across engineering, product development, manufacturing and management.	06.07.2026 13:00:00	Jul	news_2026-07-15_8.jpg	\images\news_2026-07-15_8.jpg	https://danisense.com/	danisense.com
Joint Efforts on Advancing Medium-Frequency Transformers for Solid-State Transformers	Sumida and Infineon Technologies are jointly advan...	13893	Industry News	Joint Efforts on Advancing Medium-Frequency Transformers for Solid-State Transformers	Sumida and Infineon Technologies are jointly advancing next-generation medium-frequency transformer (MFT) solutions as a key enabler for Solid-State Transformer (SST) architectures. This collaboration combines Infineon’s leadership in power semiconductor technologies with Sumida’s expertise in high-performance magnetics, addressing the rapidly evolving requirements of electrification, grid modernization, and ultra-fast charging infrastructure. SST systems represent a paradigm shift in power conversion by enabling higher efficiency, reduced system size, and enhanced controllability. At the core of these systems, medium-frequency transformers operate at significantly higher switching frequencies compared to conventional transformers, enabling significant size and weight reduction, improved power density and efficiency, enhanced bidirectional power flow capabilities, and integration into modular, scalable power architectures. Sumida’s magnetics design capabilities, particularly in core materials, winding technologies, thermal optimization and fulfilling the challenging isolation requirements of MVAC Input are closely aligned with Infineon’s latest wide-bandgap semiconductor technologies, ensuring optimal system performance, by using up to 3.3 kV CoolSiC™ devices. A key milestone of this collaboration was showcased at PCIM Europe 2026 in Nuremberg, one of the leading international exhibitions for power electronics. The positive industry feedback at PCIM underscores the growing relevance of integrated SST solutions and validates the collaboration’s technological direction. The joint effort between Infineon and Sumida exemplifies a cooperative, forward-looking approach to innovation in power electronics. By combining complementary strengths, both companies are accelerating the development of highly efficient, compact, and scalable SST solutions - paving the way for the next generation of electrified infrastructure.	05.07.2026 14:00:00	Jul	news_2026-07-15_9.jpg	\images\news_2026-07-15_9.jpg	https://www.sumida.com/	sumida.com
Safety Power Management IC for Electromechanical Braking	Allegro MicroSystems introduced the A81415, an ASI...	13895	Product Release	Safety Power Management IC for Electromechanical Braking	Allegro MicroSystems introduced the A81415, an ASIL-D-certified Power Management IC (PMIC) to integrate a wheel-speed sensor interface. The device provides electromechanical braking (EMB) designers with a simplified, single-chip power and sensing foundation for next-generation brake-by-wire systems. With an on-chip wheel-speed sensor interface (WSSI), the A81415 safety PMIC decodes standard 2-level, 2-level Pulse Width Modulation (PWM), and 3-level AK protocols (standard and high-resolution) without complicated analog circuitry or a separate decoder IC. By incorporating a fully integrated buck-boost pre-regulator, five Low-Dropout (LDO) regulators, and a single-inductor architecture that requires no external switches or diodes, the A81415 eliminates up to nine external components and unlocks up to $4 in semiconductor bill-of-materials (BOM) savings per vehicle, delivering meaningful cost advantages at OEM production scale. This level of integration opens up more than 50% of usable board space to provide the brake caliper with critical design headroom. Because the physical layer of the wheel-speed data is handled internally by the PMIC and the decoded data is shared over a Serial Peripheral Interface (SPI), the A81415 trims latency in the safety-critical loop and frees MCU bandwidth for faster braking response. Low-noise power rails are explicitly tuned to power Allegro’s XtremeSense™ TMR angle sensors and ensure the entire commutation and clamping-force signal chain is optimized as one coherent, high-resolution system from wheel to caliper.	02.07.2026 07:30:00	Jul	news_2026-07-15_12.jpg	\images\news_2026-07-15_12.jpg	https://www.allegromicro.com/en/about-allegro/newsroom/press-releases/2026/safety-pmic-with-integrated-wheel-speed-sensor-interface-a81415	allegromicro.com
Fab for Power Semiconductors and Analog/Mixed-Signal Technologies Opened	Infineon Technologies opened the Smart Power Fab i...	13885	Industry News	Fab for Power Semiconductors and Analog/Mixed-Signal Technologies Opened	Infineon Technologies opened the Smart Power Fab in Dresden several months ahead of schedule. The new plant, with an investment volume of five billion euros, is the largest single investment in Infineon’s history and one of the largest investment projects in Germany, creating 1,000 new, direct jobs. The fab doubles Infineon’s manufacturing capacities at the Dresden site, thus creating the world’s largest factory for intelligent power semiconductors and analog / mixed-signal technologies. "We’re opening our new plant at just the right time," says Jochen Hanebeck, CEO of Infineon. "Our Smart Power Fab is creating urgently needed capacities for the key technologies of the future, for everything from energy supply for AI data centers to software-defined vehicles and renewable energies. Infineon is thus giving an important impulse in making the global AI revolution possible and securing supply chains in critical industries. By taking this step, we are strengthening our global vanguard position as a leading manufacturer of power semiconductors and analog / mixed-signal technologies." The building itself and the machine layout were pre-planned and optimized using a digital twin. System and process clearance is supported by AI algorithms. Furthermore, the connection to the Infineon plant in Villach as "One Virtual Fab" makes qualification of processes and products significantly faster than in the past. With the expansion, Infineon Dresden is further strengthening its position as a worldwide leading site for power semiconductors and analog / mixed-signal technologies; at the same time, it is also bolstering the European leadership role in the overall semiconductor cluster "Silicon Saxony" in and around Dresden.	02.07.2026 06:00:00	Jul	news_2026-07-15_1.jpg	\images\news_2026-07-15_1.jpg	https://www.infineon.com/press-release/2026/ifxpr202607-117	infineon.com
Vincenzo Salmeri appointed President	Vincenzo Salmeri, an international senior executiv...	13886	People	Vincenzo Salmeri appointed President	Vincenzo Salmeri, an international senior executive with nearly 30 years of experience within Schneider Electric, has been appointed as the new President of Current/OS, the independent global nonprofit foundation bringing together manufacturers, technology leaders and electrical experts to enable the safe and large-scale deployment of Direct Current (DC) in electrical distribution systems. His appointment marks Current/OS’ transition into a new phase of international development to accelerate the safe, scalable and interoperable adoption of Direct Current. Mr. Salmeri’s appointment comes at a pivotal moment for the energy transition. As electrification accelerates, driven by renewable energy, storage, electric mobility, digital infrastructure and the rapid growth of data centers, DC is emerging as a key enabler of more efficient, flexible and resilient electrical architectures. Current/OS aims to provide the shared rules, reference architectures and interoperability framework needed to make DC systems safe, repeatable and scalable across the market.	29.06.2026 07:00:00	Jun	news_2026-07-15_2.jpg	\images\news_2026-07-15_2.jpg	https://currentos.org/	currentos.org
Patent for DC Power Junction System Technology	Custom Electronics announced it has received a pat...	13890	Industry News	Patent for DC Power Junction System Technology	Custom Electronics announced it has received a patent for its proprietary junction system technology designed for safely connecting DC power sources in parallel while preventing batteries from discharging into one another. Designed as an agnostic junction platform, the technology can be utilized with batteries, solar power systems and other DC energy sources, which creates new opportunities for scalable power distribution and energy storage applications. The patented junction unit is engineered to connect multiple DC sources and energy storage devices to a common power bus while utilizing advanced control and protection circuitry to safely manage current flow throughout the system. The technology allows for hot-swapping of connected power sources in parallel, enabling continuous operation without interruption while improving overall system performance, safety and reliability. It creates opportunities for future energy solutions, such as battery banking systems, renewable energy integration and residential or commercial power appliances that can manage multiple energy sources through a single platform. By enabling batteries, solar arrays and other DC power sources to operate together safely and efficiently, the technology establishes a flexible foundation for next-generation energy storage and power management products.	24.06.2026 11:00:00	Jun	news_2026-07-15_6.jpg	\images\news_2026-07-15_6.jpg	https://www.customelec.com/	customelec.com
Center for Microsystems Technology	A 127.4 million Euro funding provided to X-FAB MEM...	13888	Industry News	Center for Microsystems Technology	A 127.4 million Euro funding provided to X-FAB MEMS Foundry by the German federal government and the Free State of Thuringia will support the expansion of manufacturing capacity through the construction of a cleanroom at the Erfurt site. The "Fab4Micro" project is among the most significant industrial investments made in Thuringia in recent years. In December 2025, the European Commission gave the green light for the funding. The project is an important component of the European Chips Act (ECA), through which Europe aims to strengthen its technological independence in semiconductors. The new facility is scheduled to begin initial production by the end of 2028. This will enable X-FAB to expand its production capacity for micro-electro-mechanical systems (MEMS), highly integrated microsystems, and photonics. MEMS are systems that comprise electronic, sensing and mechanical elements at the micro- and nanometer scale, used for example in smartphones, vehicles, medical devices, and other applications. The investment will also establish new manufacturing capabilities for high-performance microsystems that use heterogeneous integration technology to combine numerous electronic and optical functions in a single component, required for data centers or optical systems. The Fab4Micro project will also create new highly skilled jobs in the field of microsystems.	23.06.2026 09:00:00	Jun	news_2026-07-15_4.png	\images\news_2026-07-15_4.png	https://www.xfab.com/news/details/article/grant-notification-presented-x-fab-develops-erfurt-site-into-a-center-for-microsystems-technology	xfab.com
Award recognises strong Collaboration, Customer Support and Continued Growth	TTI IP&E – Europe has received the Honeywell IA Eu...	13887	Industry News	Award recognises strong Collaboration, Customer Support and Continued Growth	TTI IP&E – Europe has received the Honeywell IA Europe IS Partner of the Year Award at the Honeywell IA Europe Elevate 2026 partner event, held in Prague. The award recognises TTI IP&E – Europe’s contribution to Honeywell’s business growth in Europe. It also highlights the value of close day-to-day alignment between the two company teams in supporting customers, developing new opportunities and maintaining the inventory needed for responsive supply. Honeywell technologies available through TTI Europe include a broad range of solutions for demanding applications across industrial, transportation, medical, aerospace and defence markets. The portfolio covers products such as pressure, force, flow, position, speed, humidity, temperature and airflow sensors, as well as robust switch technologies for industrial and mobility applications. "We are truly honoured that TTI IP&E – Europe has received the Honeywell Partner of the Year Award," said Ronald Velda, Supplier Marketing Director – Connectors, Emech and Sensors at TTI IP&E – Europe. "This recognition reflects the outstanding trust, partnership, and cooperation between our teams, which has fuelled remarkable business growth and customer satisfaction. We sincerely appreciate the ongoing support and commitment from the Honeywell team in Europe to our joint business. TTI remains fully committed to further investing in inventory and continuing to develop a robust project pipeline to support our joint growth ambitions. We deeply value this prestigious award and look forward to strengthening our partnership with Honeywell in the years to come."	23.06.2026 08:00:00	Jun	news_2026-07-15_3.jpg	\images\news_2026-07-15_3.jpg	https://www.ttieurope.com/content/ttieurope/en/manufacturers/honeywell.html	ttieurope.com
500 W Microinverter Reference Platform	Eggtronic, a semiconductor company providing IC co...	13884	Product Release	500 W Microinverter Reference Platform	Eggtronic, a semiconductor company providing IC controllers for power electronics, and Renesas Electronics released a jointly developed 500 W solar microinverter reference platform. The design combines Eggtronic’s EPIC™ mixed-signal controller technology with Renesas’ bidirectional Gallium Nitride switch to demonstrate an architecture to support microinverter OEMs and system manufacturers in developing next-generation solar microinverters and power conversion applications. The reference platform achieves 96.1 % average efficiency under CEC standards and 95.9 % under EU standards, validating the performance potential of a single-stage DC/AC topology. As photovoltaic (PV) module output continues to increase beyond 400 W, microinverter manufacturers must continuously optimize efficiency, thermal performance, component integration, and overall system cost. At the core of the platform is Eggtronic’s proprietary EPIC mixed-signal controller EPIC2ACO01. The controller executes patented Variable Frequency Modulation (VFM) and current-mode strategies designed to maintain Zero-Voltage Switching (ZVS) across the full load range. This single stage approach minimizes BOM cost, switching losses, reduces reactive power circulation, and maintains low Total Harmonic Distortion (THD), while enabling operation at switching frequencies up to 1 MHz - significantly reducing the size of magnetic components. The platform leverages Renesas’ TP65B110HRU bidirectional GaN switch, integrated in a common-drain configuration suitable for cycloconverter-based AC switching.	22.06.2026 13:30:00	Jun	news_2026-07-01_17.jpg	\images\news_2026-07-01_17.jpg	https://www.eggtronic.com/eggtronic-introduces-high-efficiency-500w-microinverter-reference-platform-with-renesas/	eggtronic.com
Certified R&D and Business Center in Drammen, Norway	Delta announced the official opening of its comple...	13889	Industry News	Certified R&D and Business Center in Drammen, Norway	Delta announced the official opening of its completely revitalized Research and Development (R&D) and business office facility in Drammen, Norway. Having achieved the prestigious BREEAM-NOR Excellent certification, the comprehensive deep-renovation project transforms a historic 50-year-old power electronics facility into a cutting-edge, 7,460-square-meter sustainable innovation hub. Designed to accommodate up to 210 employees, the facility serves as a vital development hub for Delta’s information and communications technology (ICT) power solutions, specifically advancing next-generation data center and telecom infrastructure. It integrates Delta’s own energy-efficient technologies to conquer the unique demands of high-capacity power testing, achieving an anticipated greenhouse gas emission reduction of over 50% compared to reference buildings. In tandem with this landmark inauguration, Delta announced a strategic change to its local legal entity name, transitioning from Delta Electronics Norway AS to Eltek Norway AS to significantly strengthen market opportunities. This renaming perfectly combines Eltek’s renowned local expertise with Delta’s vast global resources. By aligning these strengths, the company aims to deliver industry-leading technology to its customers, accelerate time-to-market, and reinforce a powerful "local for global" strategy from the Drammen hub.	18.06.2026 10:00:00	Jun	news_2026-07-15_5.jpg	\images\news_2026-07-15_5.jpg	https://www.delta-emea.com/en-gb/news/delta-inaugurates-business-center-in-drammen	delta-emea.com
Probes for High-Current Waveform Measurement	HIOKI Europe introduces the CT6704 and CT6705 curr...	13875	Product Release	Probes for High-Current Waveform Measurement	HIOKI Europe introduces the CT6704 and CT6705 current probes for oscilloscopes built for current-waveform observation in power electronics development and power supply evaluation. The CT6704 measures up to 200 A over a frequency range of DC to 30 MHz; the CT6705 measures up to 500 A over DC to 15 MHz. Both connect to any oscilloscope via a standard BNC connection at 0.01 V/A. These probes address two key challenges in modern power electronics: maintaining a stable zero baseline with negligible temperature drift and measuring high currents across a substantially wider frequency range than the previous probe generation. HIOKI realizes this performance by applying the fluxgate sensing principle from its precision current sensors to high-bandwidth probes. Both probes output their signal at 0.01 V/A via a standard BNC connector and can be used directly with oscilloscopes, Memory Recorders, and DAQ systems. The offset temperature coefficient is specified at ±0.1 mV/°C for reliable baseline stability over temperature, while the amplitude accuracy has doubled from ±1.0% to ±0.5% of reading. CT6704 combines 200 A rated current with 30 MHz bandwidth, corresponding to 11.6 ns rise time, and CT6705 combines 500 A rated current with 15 MHz bandwidth, corresponding to 23.3 ns rise time. Typical examples are GaN and SiC power converter development, EV powertrain and inverter testing or switching power supply design and verification. Other major applications are motor drive and industrial power electronics testing, data center backup power and load transient evaluation, renewable energy inverter validation as well as laboratory waveform analysis.	18.06.2026 06:30:00	Jun	news_2026-07-01_8.jpg	\images\news_2026-07-01_8.jpg	https://shop.hioki.eu/R-D-Production/Current-Sensing/Wideband-Current-Probes/	hioki.eu
Nanocrystalline EMI Shielding Sheets	Würth Elektronik is expanding its EMC product port...	13883	Product Release	Nanocrystalline EMI Shielding Sheets	Würth Elektronik is expanding its EMC product portfolio with nanocrystalline WE-FNCS sheets. The flexible and thin nanocrystalline layers, protected by a PET cover layer, are supplied in the form of adhesive tapes and strips. They attenuate electromagnetic interference signals in the frequency range from around 10 Hz to 120 MHz. The sheets can be used as a simple, cost-effective way to make housings for electronic devices EMC compliant without the need for mu-metal. Both emissions and external interference are challenges for developers during EMC testing, when demonstrating compliance with standards such as CISPR 32, especially in the lower frequency range. Components such as power transformers, common-mode chokes (CMCs), DC/DC converters, inverters, switched-mode power supplies, Hall effect sensors, as well as medical systems including MRI scanners, can generate unwanted magnetic fields or be affected by them. WE-FNCS is a magnetic absorber specifically developed to suppress low-frequency EMI. Its nanocrystalline structure ensures high magnetic permeability and flux saturation, ensuring uniform attenuation across the entire low- and mid-frequency range. By adapting the number of internal nanocrystalline layers, the absorption performance can be scaled to meet the requirements of different applications. Multi-layer configurations with tailored permeabilities help optimize the shielding effectiveness of a solution while keeping it thin, flexible and easy to integrate. This is particularly beneficial in applications where space is limited. Würth Elektronik can supply WE-FNCS with customized formats and layer configurations.	17.06.2026 12:30:00	Jun	news_2026-07-01_16.jpg	\images\news_2026-07-01_16.jpg	https://www.we-online.com/en/news-center/press?instance_ID=5506&d=we-fncs	we-online.com
Event on Test & Measurement for Aerospace Applications	Experience on 7 July 2026 in Berlin how precise te...	13873	Event News	Event on Test & Measurement for Aerospace Applications	Experience on 7 July 2026 in Berlin how precise test and measurement technology supports demanding aerospace applications. Look forward to practical technical presentations in English, direct exchange with experts and an equipment exhibition with our partners and manufacturers. The focus will be on specific real-world applications, technical solution approaches and your individual questions.	17.06.2026 11:00:00	Jun	news_2026-07-01_6.jpg	\images\news_2026-07-01_6.jpg	https://www.datatec.eu/de/en/ad-seminar-berlin-2026?shopSwitchInitiated=1#vortrag	datatec.eu
Manufacturer of Transformer Insulation Kits and Components Acquired	Hitachi Energy announced a major expansion of its ...	13868	Industry News	Manufacturer of Transformer Insulation Kits and Components Acquired	Hitachi Energy announced a major expansion of its North American transformer insulation business through signing a definitive agreement to acquire Canduct Group. The investment addresses a bottleneck in the region’s transformer supply chain by expanding the company’s North America regional insulation and components capabilities, strengthening resilience, and accelerating the delivery of essential grid infrastructure. Hitachi Energy’s acquisition of Canduct is expected to close at the beginning of the third calendar quarter of 2026, subject to customary closing conditions. Canduct manufactures transformer insulation kits and components, serving OEMs and repair companies across the U.S. and Canada. Founded in 1982, the company has supplied high-quality transformer insulation solutions to Hitachi Energy for over two decades. By integrating Canduct’s operations and more than 300 employees, Hitachi Energy will expand its capabilities to deliver critical transformer components needed to support the unprecedented growth in electricity demand.	17.06.2026 06:00:00	Jun	news_2026-07-01_1.jpg	\images\news_2026-07-01_1.jpg	https://www.hitachienergy.com/news-and-events/press-releases/2026/06/hitachi-energy-bolsters-the-regional-transformer-market-with-strategic-investment-in-north-america	hitachienergy.com
PFC Controller targets Battery Chargers, Power Adapters, and Power Supplies	STMicroelectronics’ L6462A transition-mode (TM) po...	13898	Product Release	PFC Controller targets Battery Chargers, Power Adapters, and Power Supplies	STMicroelectronics’ L6462A transition-mode (TM) power-factor correction (PFC) controller cuts bill-of-materials (BOM) costs while enhancing efficiency, enabling consumer products and power supplies up to 250W to meet stringent eco-design norms. The L6462A uses a current generator and shaper to produce a sinusoidal reference, instead of a conventional voltage sensor and analog multiplier, permitting boost-PFC converters without external voltage-divider components. In addition, the IC coordinates the PFC conversion cycles by sensing inductor demagnetization via the gate-driver output and hence requires no auxiliary inductor winding or interface components.In addition to lowering BOM, the L6462A’s innovative current shaping and demagnetization sensing minimizes distortion (THD) and enhances efficiency, particularly at intermediate and light loads. The controller thus permits economical PFC with superior performance, targeting high-end battery chargers, power adapters, and power supplies for domestic and consumer products like flat-panel televisions and lighting drivers. The idle current is below 60μA, helping equipment meet strict eco-design rules on standby power. At full load, the L6462A operates in quasi-resonant mode - valley switching - to minimize power dissipation. As the load is reduced, valley skipping progressively reduces the operating frequency to maintain efficiency. In addition, the controller has a deep burst-mode threshold that ensures smooth dimming in LED-lighting applications.	16.06.2026 10:30:00	Jun	news_2026-07-15_15.jpg	\images\news_2026-07-15_15.jpg	https://www.st.com/content/st_com/en/campaigns/unlock-efficient-lighting-design-with-l6462a-asp-mchvcon.html?icmp=tt49864_gl_pron_jun2026	st.com
High-Isolation Gate Drive Converters	Murata introduces its MGJ1T series, a range of 6 k...	13880	Product Release	High-Isolation Gate Drive Converters	Murata introduces its MGJ1T series, a range of 6 kV DC isolated 1 W surface-mount DC/DC converters. It is designed for powering high-side and low-side gate drive circuits in inverter, power conversion and motor drive systems. The MGJ1T series has been developed for increasing system voltages and switching speeds in applications such as energy storage systems (ESS/BESS), microgrids, EV charging infrastructure, industrial motor drives, and high-voltage power converters. Configured as a 1 W solution, the converters support nominal input voltages of 12 V, 15 V and 24 V, and provide regulated dual outputs of +15 V /-3 V, +15 V /-5 V and +18 V /-2.5 VEach device is 100% production ‘HiPot’ tested to 6 kV<sub>DC</sub> for one second and qualified to the same level for one minute, ensuring robust dielectric strength. The series is recognised to UL62368-1 and provides reinforced insulation with a working voltage of 800 V<sub>rms</sub>, for applications requiring high levels of protection with a continuous barrier withstand voltage of 2.2 kV<sub>DC</sub>. Internal construction achieves 14 mm creepage and clearance, supporting reliable operation in high-voltage environments. The MGJ1T shows a CMTI greater than 200 kV/μs. Combined with an isolation capacitance of typically 2.5 pF, this reduces high-frequency noise coupling across the isolation barrier and supports stable switching in SiC-based designs. Operating at a switching frequency of approximately 700 kHz, the converters achieve a typical ripple and noise of 10 mV<sub>p-p</sub> and efficiencies up to 77 %.	09.06.2026 23:33:00	Jun	news_2026-07-01_13.jpg	\images\news_2026-07-01_13.jpg	https://www.murata.com/en-eu/news/power/isolated-gate-drive-power/2026/0609-2	murata.com
Top-Side Cooling Package for SiC MOSFETs	ROHM has developed the TSC3PAK (14.00 × 18.5...	13881	Product Release	Top-Side Cooling Package for SiC MOSFETs	ROHM has developed the TSC3PAK (14.00 × 18.58 × 3.50 mm³) package for SiC MOSFETs. By adopting a top-side heat dissipation structure that places the heat dissipation surface on the top of the package, this product enables automated mounting while achieving heat dissipation performance comparable to that of conventional through-hole packages (TO-247-4L)), which, in turn, contributes to greater efficiency and reliability in power conversion circuits for onboard chargers (OBCs) and electric compressors used in xEVs (electric vehicles). Conventional SiC devices have generally relied on through-hole packages, which provide excellent heat dissipation during high-power operation. However, through-hole type devices involve manual mounting processes, and their form factor makes it difficult to achieve a lower package profile. Against this backdrop, surface-mount SiC devices compatible with automated mounting have begun gaining adoption. To address these issues, the new TSC3PAK delivers heat dissipation performance comparable to through-hole technology such as TO-247 in a surface-mount package. The TSC3PAK offers a creepage distance of 6.66 mm, allowing it to accommodate an AC peak voltage of 1200 V in a Pollution Degree 2 environment while maintaining compatibility with products widely adopted in the market. By enabling safe insulation design in high-voltage applications, the TSC3PAK also contributes to reduced mounting costs and higher reliability.	09.06.2026 22:22:00	Jun	news_2026-07-01_14.jpg	\images\news_2026-07-01_14.jpg	https://www.rohm.com/news-detail?news-title=2026-06-09_news_tsc3pak&defaultGroupId=false	rohm.com
Focus on E-mobility, AI Data Centers, Renewable Energy and Smart Energy at PCIM Asia Shenzhen 2026	PCIM Asia Shenzhen 2026 will focus on the power el...	13874	Event News	Focus on E-mobility, AI Data Centers, Renewable Energy and Smart Energy at PCIM Asia Shenzhen 2026	PCIM Asia Shenzhen 2026 will focus on the power electronics needs of three application markets placing new demands on power infrastructure: e-mobility, AI data centers, renewable energy & smart energy. Part of this Asian event series for the power electronics industry, the exhibition returns to the Shenzhen World Exhibition & Convention Center from 26 – 28 August 2026. It will expand its scale to 30,000 sqm, with more than 300 domestic and international exhibitors expected to participate and welcome professional visitors from around the world. At the show Mitsubishi Electric and Infineon will serve as strategic partners, while Semikron Danfoss, Fuji Electric and ROHM will participate as platinum sponsors. Long-term exhibitors such as CRRC and Power Integrations will also take part, alongside a number of new exhibitors joining the 2026 edition. Exhibits will showcase the components, equipment and applied solutions supporting the sector from development and manufacturing to finished applications. Technology coverage areas include integrated circuits, power semiconductors, sensors, power supplies, electronic testing and measurement, passive components, connectors, switches, semiconductor manufacturing and inspection technologies. This year there will also be e.g. an AI Data Centre Power Ecosystem Zone addressing the growing energy demands that large-scale AI computing places on data centre infrastructure. Focusing on the full power delivery chain from grid interfaces to chip-grade power transmission, the zone will present high-voltage DC power supplies, solid-state transformers, high-power-density modules and advanced liquid cooling systems. Three concurrent forums, the AI Power Application Forum, the Smart Drive and Control Forum and the GaN for Physical Conference, will examine the relevant technical and design considerations.	09.06.2026 12:00:00	Jun	news_2026-07-01_7.jpg	\images\news_2026-07-01_7.jpg	https://pcimasia-shenzhen.cn.messefrankfurt.com/shenzhen/en/press/press-releases/2026/PCIM26_PR3.html	pcimasia-shenzhen.cn
Institution in the Field of Electromagnetic Compatibility Research	Würth Elektronik representatives joined faculty an...	13891	Industry News	Institution in the Field of Electromagnetic Compatibility Research	Würth Elektronik representatives joined faculty and students to celebrate the tenth anniversary of the jointly established "Cátedra EMC Würth Elektronik – Universitat de València." Chair holders Professor José Torres, Professor Adrian Suarez, Ph.D., Jorge Victoria, and Antonio Alcarria, Product Managers at Würth Elektronik eiSos, welcomed Alexander Gerfer, Chief Technology Officer (CTO) of the Würth Elektronik Group, as the keynote speaker at the ceremony. Representing the university, Inmaculada Coma, Vice-Rector of the Universitat de València, praised the fruitful collaboration. The Chair of Electromagnetic Compatibility (EMC) was established ten years ago to advance both research and practical applications in this field. Since then, it has supervised doctoral dissertations as well as master’s and bachelor’s theses, delivered seminars and courses on EMC topics, and organized presentations at international conferences. Each year, Würth Elektronik proposes projects that enable internships both in the chair’s laboratory and at company’s headquarters. Coordination of these activities is overseen by PhD Jorge Victoria and Antonio Alcarria from Würth Elekronik’s Product Management team. "At Würth Elektronik, it’s always about the people. For us, support isn’t limited to customers; we also stand by researchers with advice and assistance and support student initiatives, for example. EMC has always been an important field for us, and with the Cátedra EMC, we fulfilled a dream ten years ago," said Alexander Gerfer, CTO of the Würth Elektronik eiSos Group, in his speech, and thanked everyone involved.	09.06.2026 12:00:00	Jun	news_2026-07-15_7.jpg	\images\news_2026-07-15_7.jpg	https://www.we-online.com/en/news-center/press?instance_ID=5506&d=10-jahre-catedra	we-online.com
Power MOSFETs in wettable Flank Package	Taiwan Semiconductor introduces the TQM series of ...	13899	Product Release	Power MOSFETs in wettable Flank Package	Taiwan Semiconductor introduces the TQM series of automotive-grade power MOSFETs. The n-channel, 40V/60V devices come in a wettable flank PDFN56U package supporting drop-in pin compatibility with other package types. The wettable flank connections are ideal for automated placement, meeting automotive board mount testing and AEC-Q qualification testing and high yield manufacturability. Their low-profile packaging with heat-spreader contacts provides excellent thermal management and increased power density to meet the demands of many applications. In addition to 48V automotive systems, applications include industrial, solenoid and motor control, server power and other high-reliability DC-DC converters. "The PDFN56U footprint compatibility makes drop-in replacement for TDSON-8, LFPAK56 and DFN5x6 packages very straightforward – selecting our PDFN56U package with its wettable flank simplifies automotive test procedures," said Sam Wang, vice president, TSC Products. "The AEC-Q quality and reliability are also of benefit and many non-automotive applications where high reliability is required."	09.06.2026 11:30:00	Jun	news_2026-07-15_16.jpg	\images\news_2026-07-15_16.jpg	https://www.taiwansemi.com/en/product-filter/?category=mosfets-20	taiwansemi.com
1200 V SiC MOSFETs in Top-Side cooled SMD Package	Nexperia released 1200 V silicon carbide MOSFETs i...	13882	Product Release	1200 V SiC MOSFETs in Top-Side cooled SMD Package	Nexperia released 1200 V silicon carbide MOSFETs in QDPAK packaging, which is a top-side cooled surface-mount package optimized for high-power density and thermally demanding applications. Available in both industrial-grade and automotive-qualified variants, the portfolio offers R<sub>DS(on)</sub> options of 17, 30, 40, 60 and 80 mΩ, delivering a scalable QDPAK platform for applications ranging from high-power systems to compact designs with demanding thermal and mechanical constraints. QDPAK packaging addresses a key limitation in high-voltage power conversion systems: heat dissipation through the PCB. By enabling a direct die-to-heatsink thermal path from the top side of the package, these devices reduce reliance on the board as the primary heat-spreading path and allow the semiconductor and PCB thermal domains to be managed more independently. Compared to conventional D2PAK-7 packaging, top-side cooled packages can deliver up to 3 kW higher output power at comparable thermal limits, while also providing around 40 °C additional thermal headroom at the same power level. Building on the existing X.PAK platform, QDPAK further extends power handling capability, enabling operation at approximately 3 kW higher power at comparable case temperatures, while offering around 23 °C additional thermal headroom at similar power levels. Well suited for EV onboard chargers (OBC), high-voltage DC-DC converters, EV charging infrastructure, photovoltaic inverters, uninterruptible power supplies (UPS), motor drives and datacenter power systems.	09.06.2026 11:30:00	Jun	news_2026-07-01_15.jpg	\images\news_2026-07-01_15.jpg	https://www.nexperia.com/about/news-events/press-releases/nexperia-brings-QDPAK-packaging-to-1200-V-SiC-MOSFETs-to-overcome-thermal-bottlenecks-in-high-power-designs	nexperia.com
Strategic Collaboration on SiC Power Modules for Automotive Applications	Nexperia and Semikron Danfoss have signed a Memora...	13872	Industry News	Strategic Collaboration on SiC Power Modules for Automotive Applications	Nexperia and Semikron Danfoss have signed a Memorandum of Understanding (MoU) to explore a strategic collaboration on SiC-based power modules for automotive traction inverter applications. The collaboration aims to combine Nexperia’s expertise in SiC semiconductor technology with Semikron Danfoss’ capabilities in power module packaging and integration. Together, the companies intend to evaluate how a joint approach can enable high-performance, scalable solutions for next-generation electric vehicles. SiC technology plays a critical role in improving the efficiency, power density, and performance of electric drivetrains. By bringing together complementary competencies across the value chain – from chip to module – the companies aim to advance optimized solutions tailored to the demanding requirements of automotive applications. As part of the collaboration, both companies will explore joint engineering approaches, including early integration and co-design, to unlock the full performance potential of SiC-based systems. Both companies share a strong European heritage and longstanding industry experience, providing a foundation for exploring future collaboration opportunities in the automotive power electronics space.	09.06.2026 10:00:00	Jun	news_2026-07-01_5.jpg	\images\news_2026-07-01_5.jpg	https://www.nexperia.com/about/news-events/press-releases/nexperia-and-semikron-danfoss-explore-strategic-collaboration-on-sic-power-modules-for-automotive-applications	nexperia.com
Reference Design for compact GaN-based 3-Phase BLDC Motor Drive Inverters	Efficient Power Conversion (EPC) introduced the EP...	13878	Product Release	Reference Design for compact GaN-based 3-Phase BLDC Motor Drive Inverters	Efficient Power Conversion (EPC) introduced the EPC91132, a compact 3-phase BLDC motor drive inverter reference design based on the EPC33110 GaN three-phase module. The EPC91132 is a 23 mm reference design inverter for small motor drives for humanoid wrists and hands and for drones. It incorporates the EPC33110 GaN module, containing three half bridges, gate drivers, bootstrap circuitry and level shifters in a 6 mm x 6.5 mm QFN package. The module can be powered by a single 5 V power supply up to 80 V with typical on-resistance of 11.7 mΩ and supporting 3.3 V or 5 V logic inputs. Operating in the 10 V to 60 V DC input range it includes the key functions needed for an inverter including a microcontroller, regulated power supplies, DC bus voltage sensing, current sensing with embedded overcurrent protection and onboard magnetic encoder for rotor position and speed control. The platform is programmable through a dedicated connector and can be monitored in real time through the RS-485 communication. The board has been designed with a flexible breakout-ring concept to support various form factors. With the outer ring removed, the board is 23 mm in diameter, which means it could be incorporated into small drone motors such as the Vertiq 23-06 platform. Performance tests have shown that the module can provide a continuous current of 11 A<sub>RMS</sub> per phase for humanoid robotic joint applications operating at 48 V and switching frequency up to 100 kHz. Complete design support files, including schematics, bill of materials (BOM), and Gerber files, are available for download.	09.06.2026 09:30:00	Jun	news_2026-07-01_11.jpg	\images\news_2026-07-01_11.jpg	https://epc-co.com/epc/about-epc/events-and-news/news/artmid/1627/articleid/3320/epc-introduces-smallest-gan-drive-based-on-epc33110-for-robots-and-drones	epc-co.com
Power Company and Processor Provider join Forces	Cambridge GaN Devices (CGD) joins forces with NXP&...	13871	Industry News	Power Company and Processor Provider join Forces	Cambridge GaN Devices (CGD) joins forces with NXP® Semiconductors to accelerate time to market in data centre and automotive markets. This long-term collaboration will enable NXP to develop GaN-based system solutions, leveraging CGD’s GaN products, early access to next-generation CGD GaN developments, and the team’s expertise in GaN processes and technologies. At the same time, CGD will benefit from access to NXP’s processor and analog product portfolios, system know-how and global commercial reach, accelerating market penetration through optimised system-level solutions. GaN semiconductors enable switching at higher frequencies and achieve greater efficiency compared to competing technologies. The rapidly increasing power demands in data centres is particularly driven by the growing use of AI. A single rack might have only consumed 40 kW in 2022 yet today can draw 200 kW or more and it is expected that a single rack will require 1 MW or more by 2030. The increased compute density and modern power architectures place stringent requirements on power density and the need to deliver high step-down ratios while maintaining power efficiency. ICeGaN® is positioned to address these requirements aiming to enable higher switching frequency operations, higher power density and delivering superior reliability compared to discrete GaN solutions.	09.06.2026 09:00:00	Jun	news_2026-07-01_4.jpg	\images\news_2026-07-01_4.jpg	https://camgandevices.com/en/p/cgd-joins-forces-with-nxp-semiconductors-to-accelerate-time-to-market/	camgandevices.com
Precise Fluxgate AC/DC Current Transducer	Danisense introduced a compact MBC4000I fluxgate A...	13877	Product Release	Precise Fluxgate AC/DC Current Transducer	Danisense introduced a compact MBC4000I fluxgate AC/DC current transducer for current measurements of up to 4000A and more. The device delivers measurement performance levels up to 10 times higher than conventional Hall-effect transducer solutions currently on the market. Built on Danisense’s closed-loop fluxgate technology, the product provides an accuracy below 0.05% over the temperature range from -20 °C up to +85 °C and low sensitivity drift. Featuring an aperture of Ø 121 mm for busbar applications, a 1:5000 primary-to-secondary ratio, and minimal offset drift over temperature, the transducer is suited for demanding high-current measurement environments.	09.06.2026 08:30:00	Jun	news_2026-07-01_10.jpg	\images\news_2026-07-01_10.jpg	https://danisense.com/products/mbc4000i/	danisense.com
Low-Voltage Motor Driver Portfolio for Industrial and Smart Appliance Applications	NOVOSENSE’s NSD7305 and NSD7308 are 40V brushed DC...	13896	Product Release	Low-Voltage Motor Driver Portfolio for Industrial and Smart Appliance Applications	NOVOSENSE’s NSD7305 and NSD7308 are 40V brushed DC motor drivers supporting both H-bridge and half-bridge configurations. The devices feature configurable output slew rate control and spread-spectrum clocking to help optimize EMI performance in motor drive systems. Integrated current mirror sensing eliminates the need for external sense resistors, helping simplify PCB design and reduce system cost. The devices also integrate protection and diagnostic functions including VM voltage monitoring, overcurrent protection, overtemperature protection, and open-load and short-circuit diagnostics. The NSD7305 supports up to 21A peak current with 47mΩ R<sub>DS(ON)</sub>, while the NSD7308 supports up to 12A peak current with 84mΩ R<sub>DS(ON)</sub>. Both devices support hardware and SPI interface versions and are designed as drop-in replacements for existing industry solutions. For compact motor control applications, the NSD7309 integrates a single-channel H-bridge driver supporting up to 8A peak current and 120mΩ R<sub>DS(ON)</sub>. The device supports PWM control, integrated current regulation, and comprehensive protection functions including undervoltage, overvoltage, overcurrent, and overtemperature protection. Typical applications include smart home devices, robotic appliances, electric curtains, massage chairs, and industrial control equipment.	09.06.2026 08:30:00	Jun	news_2026-07-15_13.jpg	\images\news_2026-07-15_13.jpg	https://www.novosns.com/en/brushed-dc-motor-drivers	novosns.com
Protection Solution for Data Centers, Renewable Energy and Charging Stations	Mersen’s high-performance fuses save space for equ...	13876	Product Release	Protection Solution for Data Centers, Renewable Energy and Charging Stations	Mersen’s high-performance fuses save space for equipment manufacturers and increase flexibility in installation. Whereas the engineers previously needed two different fuse types for AC and DC applications, only one is now required. The product range covers several rated currents, and the fuses can be used as standard AC fuses, aR fuses or fast-acting fuses. Their primary application area is power electronics, power conversion systems like but not limited to inverters, SST, CS and MCS. These systems convert direct current – e.g., from PV and wind energy plants – into grid-compatible alternating current. Manufacturing is performed on fully automated production lines in accordance with the latest technical standards (IEC, UL, CCC, RoHS, REACH, WEEE). Mersen also provides users with a range of data from simulation processes that demonstrate the fuse’s behavior in a customer-specific application. This facilitates product selection to match the respective requirements. Now there are two new sizes available for emerging DC applications up to 1000 V/1000 A.	09.06.2026 07:30:00	Jun	news_2026-07-01_9.jpg	\images\news_2026-07-01_9.jpg	https://www.mersen.com/en	mersen.com
Magnetics Design Platform now allows Planar Transformers plus Thermal Modelling	Frenetic Electronics adds new features to its web-...	13869	Industry News	Magnetics Design Platform now allows Planar Transformers plus Thermal Modelling	Frenetic Electronics adds new features to its web-based custom magnetics design platform, that aim to help solve magnetic challenges. An example of this approach is Frenetic’s planar magnetics design and simulation tool. Addressing another challenge, in the automotive sector where thermal constraints and power density are becoming increasingly demanding, Frenetic has introduced capabilities such as potting simulation and liquid cooling plate modeling. As power electronics systems move toward higher switching frequencies and more compact, integrated designs, planar magnetics are becoming increasingly common, yet also significantly more complex to design due to parasitics, thermal constraints, and integration requirements. Frenetic Simulator is used across multiple industries, including automotive, aerospace and data centres, each with very different constraints. Rather than building generic features, Frenetic is evolving its platform by working closely with these industries and understanding how magnetic design challenges differ across applications. The potting simulation capability allows automotive engineers to account for the thermal and electromagnetic impact of resin materials surrounding the transformer, which can significantly affect component behaviour. And cooling plate / liquid cooling support enables the modeling of metallic cooling structures integrated into the transformer and connected to liquid cooling systems, a growing requirement in high-power automotive applications.	09.06.2026 07:00:00	Jun	news_2026-07-01_2.jpg	\images\news_2026-07-01_2.jpg	https://www.frenetic.ai/	frenetic.ai
Isolated Through-Hole Package for SiC MOSFETs for Direct-Cooled Thermal Management	Navitas Semiconductor launched the UHV TO 247 4 IS...	13879	Product Release	Isolated Through-Hole Package for SiC MOSFETs for Direct-Cooled Thermal Management	Navitas Semiconductor launched the UHV TO 247 4 ISO package, which is purpose built for 1200 V to 3300 V GeneSiC™ SiC MOSFETs, delivering module like performance in a compact discrete form factor. It offers over 12 mm pin-to-pin creepage and greater than 6000 V integrated isolation. When compared with standard non-isolated through-hole packages, this package not only eliminates the need for external high-voltage isolation but also improves thermal and EMI performance. This expands Navitas’ packaging portfolio, including SiCPAK® power modules, QDPAK, TO 247 LP, and other solutions, for more efficient, denser, scalable power systems in energy, grid, and AI data centers. A high-voltage isolated, reflow-compatible thermal pad lets the package mount directly to liquid- or air-cooled heat sinks, eliminating external TIM. This reduces R<sub>TH,J-HS</sub> by up to 60 %, leading to up to 150 % increased power dissipation capability, improving power density, reliability, manufacturability, and overall system cost. Integrated high-voltage isolation reduces die-to-heatsink stray capacitance compared to external ceramic-based isolators, effectively minimizing common-mode noise and radiated EMI. This enables higher switching speeds and delivers improved power density, increased system efficiency, and reduced system-level costs associated with EMI mitigation. The package is compatible with the established high-voltage TO 247-4 form factor and lead geometry.	08.06.2026 10:30:00	Jun	news_2026-07-01_12.png	\images\news_2026-07-01_12.png	https://navitassemi.com/navitas-introduces-isolated-through-hole-package-for-sic-mosfets-enabling-direct-cooled-thermal-management/	navitassemi.com
Silicon Carbide Technology is the Core Element in Semiconductor Circuit Breakers	Infineon Technologies and Siemens are partnering t...	13870	Industry News	Silicon Carbide Technology is the Core Element in Semiconductor Circuit Breakers	Infineon Technologies and Siemens are partnering to advance electrical protection and ensure reliable operations in data centers, production facilities and battery storage systems. As part of the collaboration, Infineon will supply silicon carbide power modules to Siemens for use in its SENTRON 3QD2 semiconductor circuit breakers. Unlike traditional electromechanical circuit breakers, which rely on mechanical parts to interrupt the flow of current and typically operate on the millisecond scale, the Siemens SENTRON 3QD2 uses semiconductor components and smart protection algorithms to perform this function. This enables ultra-fast interruption in the microsecond range, up to 1,000 times faster than conventional systems. This capability is essential for DC grids and offers a significant increase in protection and system availability, which is crucial in applications like industrial manufacturing and AI data centers, where even a slight delay can cause costly downtime, data loss or expensive hardware damage in the event of electrical failures. The collaboration addresses the increasing demands of power critical applications, where speed, precision and reliability are essential. By integrating Infineon’s 62 mm CoolSiC™ MOSFET module 1200 V into Siemens’ protection concepts, the companies are contributing to more resilient, efficient and future-ready power infrastructure. This joint approach supports the growing adoption of DC grids and highly electrified environments, helping industrial and infrastructure operators meet rising performance and reliability requirements.	08.06.2026 08:00:00	Jun	news_2026-07-01_3.jpg	\images\news_2026-07-01_3.jpg	https://www.infineon.com/press-release/2026/infgip202606-107	infineon.com
Jointly Developed Package for Power Semiconductor Modules	Mitsubishi Electric announced that it has jointly ...	13894	Product Release	Jointly Developed Package for Power Semiconductor Modules	Mitsubishi Electric announced that it has jointly developed a new standard package for power modules with integrated 3-level circuits, designed for industrial drive equipment and renewable energy systems, in collaboration with Semikron Danfoss Elektronik. This new standard package is based on Mitsubishi Electric’s LV100-type package for high-power applications and Semikron Danfoss’s SEMITRANS20 package. By optimizing terminal layout and functions specifically for 3-level circuits while ensuring compatibility between the two companies’ products, the package will help customers standardize their inverter designs. As the movement toward Green Transformation (GX) accelerates to realize a decarbonized society, demand is growing for power semiconductors that efficiently convert electricity. Particularly in the industrial sector, to further reduce power consumption, there is increasing adoption of 3-level circuits, which offer higher efficiency and allow for smaller peripheral components compared to conventional 2-level circuits. The package, jointly developed by Mitsubishi Electric and Semikron Danfoss, incorporates a 3-level T-type circuit, contributing to higher efficiency and more compact inverter designs. Furthermore, the optimal arrangement of main electrode terminals and auxiliary control terminals specifically for 3-level T-type circuits enhances inverter design flexibility. Moving forward, both companies will independently develop products using this new standard package, contributing to standardized inverter designs.	08.06.2026 06:30:00	Jun	news_2026-07-15_11.jpg	\images\news_2026-07-15_11.jpg	https://de.mitsubishielectric.com/en/pr/global/2026/0608_sd/	mitsubishielectric.com
Collaboration on high-voltage SiC Technology for Railway Systems	Mitsubishi Electric Europe B.V., Semiconductor Div...	13852	Industry News	Collaboration on high-voltage SiC Technology for Railway Systems	Mitsubishi Electric Europe B.V., Semiconductor Division, and Siemens Mobility GmbH, Business Unit Rolling Stock, are strengthening their collaboration on high-voltage silicon carbide (SiC) technology for railway traction applications with the signing of a long-term agreement. Building on the Memorandum of Understanding (MoU) signed in 2022 and leveraging their complementary strengths, both companies are advancing the development, qualification, and industrialization of SiC-based power modules to support more energy-efficient and high-performance railway drive systems. The collaboration provides a framework for ongoing technical exchange and the evaluation of next generation SiC solutions for future railway platforms. High-voltage SiC technology has already demonstrated its capabilities in railway applications. Traction systems equipped with SiC-based modules are operating in regular passenger service in selected Siemens Mobility projects, contributing to improved efficiency, lower energy consumption, and reliable system performance under real-world conditions. Based on these operational experiences and a well-established, reliable supply relationship, Siemens Mobility and Mitsubishi Electric Europe B.V., Semiconductor Division, continue to explore the application of advanced SiC module technologies in upcoming railway projects. Activities include the qualification of new module generations, optimization of system integration, and validation under demanding operating conditions typically required for high-capacity commuter and regional rail services.	05.06.2026 06:00:00	Jun	news_2026-06-15_1.jpg	\images\news_2026-06-15_1.jpg	https://www.mitsubishielectric.com/en/	mitsubishielectric.com
800 V_DC Converters for Next-Generation AI Data Centers	Advanced Energy Industries announced the ADH serie...	13865	Product Release	800 V<sub>DC</sub> Converters for Next-Generation AI Data Centers	Advanced Energy Industries announced the ADH series of DC/DC converters designed for next generation 800 V DC AI data center power architecture. The ADH series converts 800 V DC input into 50 V DC output, operating at multi-MHz switching frequency with a peak power efficiency of 98.2 %. The converters deliver up to 8 kW peak power and 6 kW full load power in a standard half-brick package, delivering peak power density of over 2,700 W/In<sup>3</sup> and full load power density of over 2,000 W/In<sup>3</sup>. By combining the ADH series with the NDQ series of ultra-efficient 50 V DC to 12 V DC non-isolated bus converter (NIBC) and the newly developed Hot Swap Control (HSC) module, which manages inrush current and provides additional protection functions, Advanced Energy delivers complete 800 V<sub>DC</sub> power solutions that enable higher power levels and the increased power density required for megawatt-capable AI server racks.	03.06.2026 13:30:00	Jun	news_2026-06-15_14.png	\images\news_2026-06-15_14.png	https://ir.advancedenergy.com/news/advanced-energy-introduces-800-v-dc-converters-for-next-generation-ai-data-centers-new-dc-dc-converters/4a23cb7c-eda6-405d-b5f6-5081b61c4c01	advancedenergy.com
Teaming up to establish U.S. Gallium Supply Chain	Indium Corporation® and Ames National Laborato...	13853	Industry News	Teaming up to establish U.S. Gallium Supply Chain	Indium Corporation® and Ames National Laboratory have announced a research and development partnership to expand U.S. production of gallium. The alliance will focus on developing the technologies needed to establish a domestic supply chain for an element that currently relies almost exclusively on imported sources. In the U.S., gallium is recovered as a byproduct of well-established, high-volume aluminum refining operations. Called the Bayer process, this method uses caustic liquids and high temperatures to extract and refine aluminum from raw ore. Gallium is typically present in the refining process waste in low concentrations of about 100 parts per million. Liquid-based refining methods typically use specialized polymers (resins), that can separate and concentrate metals from mining solutions. For this project, Ames Lab researchers are designing a heat-stable, efficient resin that is selective for gallium. Ames Lab’s robotic lab capabilities can generate high-quality data quickly. When paired with AI tools, the data can be rapidly analyzed to uncover patterns, optimize processes, and guide the iterative design of materials. These accelerated workflows can shrink the development timeline from decades to as little as two to three years. Scaling the technology is a joint effort, which will be done through a Cooperative Research and Development Agreement (CRADA): Indium Corporation will provide a U.S. resin testbed that mirrors high-volume production and techno-economic models to define the required material properties, and Ames Lab will synthesize materials up to the hundreds-of-grams scale. Future scale-up to kilograms and tons will continue collaboratively.	03.06.2026 07:00:00	Jun	news_2026-06-15_2.jpg	\images\news_2026-06-15_2.jpg	https://www.indium.com/press-releases/indium-corporation-ames-national-laboratory-team-up-to-establish-u-s-gallium-supply-chain/	indium.com
SMD Fuse for High-Current 48 V_DC AI Data Center Protection	Littelfuse announced the NANO2® Surface-Mount ...	13864	Product Release	SMD Fuse for High-Current 48 V<sub>DC</sub> AI Data Center Protection	Littelfuse announced the NANO2® Surface-Mount 708 Series Fuse, a surface-mount fuse offering a 14,000 A interrupting rating at 80 V DC. Engineered for next-generation 48 V DC power architectures, the 708 Series addresses the growing protection demands of AI servers, hyperscale data centers, and high-density power distribution systems. As power levels rise and board space shrinks, designers have been forced to rely on oversized, manually installed through-hole or bolt-down fuses. The 708 Series provides an automation-friendly alternative without compromising performance. It provides current ratings of 60 A to 200 A in a surface-mount package. The 708 Series is designed as supplemental overcurrent protection for circuits where high fault current is anticipated, including power distribution units (PDUs), power shelves, battery backup units (BBUs), and power supply units (PSUs). It is also suited for AI server clusters, networking equipment, and hyperscale data center infrastructure. Additional applications include renewable energy systems and battery management systems (BMS), where compact, high-power protection solutions are critical.	02.06.2026 12:30:00	Jun	news_2026-06-15_13.jpg	\images\news_2026-06-15_13.jpg	https://www.littelfuse.com/company/news-and-events/in-the-news/newspages-articles/press-releases/2026/littelfuse-nano2-smd-708-series-fuse-enables-high-current-48-vdc-ai-data-center-protection	littelfuse.com
Complementary 30 V Dual MOSFET	Toshiba launched the SSM6L826R, a 30 V dual MOSFET...	13863	Product Release	Complementary 30 V Dual MOSFET	Toshiba launched the SSM6L826R, a 30 V dual MOSFET that integrates both N-channel and P-channel MOSFETs in a single package. The product is suited for applications including single-phase brushless DC (BLDC) motor control, brushed DC motor control, and load switches for power supply lines in consumer and industrial control equipment. The SSM6L826R uses Toshiba’s UMOSVIIH process for the N-channel MOSFET and the UMOSVI process for the P-channel MOSFET. It is housed in a compact TSOP6F package (2.9 mm × 2.8 mm × 0.8 mm) with flat leads. The device achieves drain-source on-resistance (R<sub>DS(ON)</sub>) values of 46 m&ohm; (max.) (V<sub>GS</sub> = 10 V) for the N-channel MOSFET and 45 m&ohm; (max.) (V<sub>GS</sub> = -10 V) for the P-channel MOSFET.	02.06.2026 11:30:00	Jun	news_2026-06-15_12.jpg	\images\news_2026-06-15_12.jpg	https://toshiba.semicon-storage.com/eu/company/news/2026/06/MOSFET-20260602-1.html	toshiba.semicon-storage.com
How 800V EV Innovations are Redefining AI Data Centers	According to IDTechEx forecasts in the market repo...	13857	Industry News	How 800V EV Innovations are Redefining AI Data Centers	According to IDTechEx forecasts in the market report "Power Electronics Market 2026-2036: Data Centers, Electric Vehicles, and Renewables", the power electronics market for data centers is expected to grow 2.5-fold by 2036. A paradigm shift in data center power architecture is coming over the next few years in the form of HVDC (800 V<sub>DC</sub>) data centers, which will unlock an order-of-magnitude increase in rack power. This overhaul in data center power architecture is directly influenced by 800 V EV power electronics, from the materials used to high-voltage safety and protection mechanisms. In its study IDTechEx tracks innovations across EV and data center power electronics, drawing deep, cross-application conclusions between EV and data center power electronics. Rack power levels have exploded from around 20 kW pre-ChatGPT to 100 kW today, with rack power expected to reach over 1 MW by the end of the decade. With incumbent Si power electronics and 480/54 V data center architecture, a 1 MW rack would require the whole rack space to be dedicated to power conversion and would need over 200 kg of copper. Data center efficiency was and still is a key consideration in data center design. Data center power density, the amount of power processed per unit volume, will become an increasingly critical metric for AI data center design. GaN will likely enjoy faster uptake in data centers than in electric vehicles. Reference designs for 8 kW and 12 kW power supply units (PSUs) across leading power electronics players, such as Infineon and Navitas, feature SiC for high-voltage conversion stages and power factor correction (PFC), and GaN for low-voltage conversion stages.	02.06.2026 11:00:00	Jun	news_2026-06-15_6.png	\images\news_2026-06-15_6.png	https://www.idtechex.com/en/research-report/power-electronics-market/1152	idtechex.com
High Current Chip Ferrite Beads for EMI Suppression in High Density Power	Bourns announced the MH3261 T Series High Current ...	13866	Product Release	High Current Chip Ferrite Beads for EMI Suppression in High Density Power	Bourns announced the MH3261 T Series High Current Chip Ferrite Beads, designed to address EMI suppression challenges in high density PCB layouts where current capacity and board space are constrained. The series combines a 3.2 mm × 1.6 mm footprint with a rated current capability up to 11 A, enabling noise suppression without introducing excessive power loss. These characteristics support stable performance in space limited designs. As power densities increase and PCB assemblies become more compact, designers face tighter limits on allowable insertion loss while maintaining effective high frequency noise suppression. Ferrite beads used in these environments must carry higher currents without thermal overstress or impedance degradation. The MH3261 T Series addresses these constraints by pairing low DCR with a wide impedance range, supporting EMI control in dense layouts while operating across a broad temperature range from –55 °C to +125 °C. Its DC resistance is 0.0025 &ohm; , while the impedance range values from 30 &ohm; to 1000 &ohm; at 100 MHz.	01.06.2026 14:30:00	Jun	news_2026-06-15_15.jpg	\images\news_2026-06-15_15.jpg	https://bourns.com/news/press-releases/pr/2026/06/02/bourns--mh3261-t-series-high-current-chip-ferrite-beads-for-emi-suppression-in-high-density-power	bourns.com
800 V-to-12.5 V Power Conversion for AI Infrastructure built on NVIDIA MGX™	Efficient Power Conversion (EPC) has provided deta...	13862	Product Release	800 V-to-12.5 V Power Conversion for AI Infrastructure built on NVIDIA MGX™	Efficient Power Conversion (EPC) has provided details on its EPC91123 evaluation board, an 800 V DC to 12.5 V DC, 6 kW isolated converter designed to support next-generation AI data center power architectures. As a contributor to the NVIDIA MGX™ AI Factory ecosystem, EPC contributes GaN-based power conversion solutions designed to support emerging 800 V DC server architectures, enabling higher power density, improved efficiency, and scalable rack-level power delivery for next-generation AI infrastructure. By enabling direct 12.5 V conversion and eliminating the need for a 48 V intermediate stage, the solution improves overall system efficiency by 1–2 %. The converter is built on an input-series, output-parallel (ISOP) LLC topology and leverages Gen7 devices, including the 3.3 mm × 2.6 mm, 40 V, 0.8 m&ohm; EPC2366 and 150 V, 2.2 m&ohm; EPC2305. The solution achieves 98.2 % peak efficiency and 97 % full-load efficiency. Optimized for space-constrained AI server environments, the board delivers high power density in a compact 104 mm × 47 mm × 8 mm form factor.	01.06.2026 10:30:00	Jun	news_2026-06-15_11.jpg	\images\news_2026-06-15_11.jpg	https://epc-co.com/epc/about-epc/events-and-news/news/artmid/1627/articleid/3317/epc-supports-ai-infrastructure-built-on-nvidia-mgx%e2%84%a2-with-high-efficiency-800v-to-125v-power-conversion	epc-co.com
Slim Auxiliary PSU Reference Designs for NVIDIA Kyber 800 V_DC AI Data Center	Power Integrations introduced two slim, compact au...	13861	Product Release	Slim Auxiliary PSU Reference Designs for NVIDIA Kyber 800 V<sub>DC</sub> AI Data Center	Power Integrations introduced two slim, compact auxiliary power supply reference designs for 800 V DC AI data centers. The single-output, 15 W design is 30 mm by 30 mm with a 7 mm profile, while the isolated, six-rail, 35 W design measures 80 mm by 60 mm with an 8 mm profile. Optimized specifically for the NVIDIA Kyber liquid-cooled, blade-rack architecture, these ultra-compact solutions free up approximately 30 percent space on densely packed main power distribution boards (PDBs) with an estimated 30 percent reduction in the BOM count - streamlining design and improving overall reliability. These designs are highly efficient with at least 88 percent efficiency across line and load. The newly published design example reports describe 35 W and 15 W flyback auxiliary power supplies for high-voltage AI data center applications. Both designs are based on Power Integrations’ InnoMux™-2 ICs with 1700 V PowiGaN™ GaN technology. The 1700 V-rated InnoMux-2 IC supports 1000 V DC nominal input voltage in a flyback configuration and can deliver flat efficiency of 90 percent in discontinuous conduction mode (DCM) while maximizing power delivery.	01.06.2026 09:30:00	Jun	news_2026-06-15_10.jpg	\images\news_2026-06-15_10.jpg	https://investors.power.com/news/news-details/2026/Power-Integrations-Unveils-Space-Saving-Ultra-Slim-Auxiliary-PSU-Reference-Designs-for-NVIDIA-Kyber-800-VDC-AI-Data-Center/default.aspx	power.com
AI-based Magnetics and Power Design Tools in Asia	Frenetic Electronics has signed an agreement with ...	13854	Industry News	AI-based Magnetics and Power Design Tools in Asia	Frenetic Electronics has signed an agreement with Szdore Electronics of Shenzhen, China, to provide local support for designers. The company sees that closer relationships with customers is critical for the adoption of its tools in engineering-driven markets. Feedback loops that directly inform product development are also shortened. Frenetic offers three main tools which seamlessly integrate with each other: Frenetic Magnetic Simulator is used to customize and validate cores for transformers and inductors including winding configurations, loss & thermal modeling and leakage inductance. Frenetic Planar exists to design and simulate planar transformers in minutes. AI Converter Assistant helps engineers to move from converter specifications to initial topology suggestions and early-stage design guidance, LTspice & KiCad export.	01.06.2026 08:00:00	Jun	news_2026-06-15_3.jpg	\images\news_2026-06-15_3.jpg	https://www.frenetic.ai/	frenetic.ai
Semiconductor Manufacturer joins MGX AI Factory Ecosystem for AI Server Racks	Infineon Technologies has joined NVIDIA’s MGX AI F...	13856	Industry News	Semiconductor Manufacturer joins MGX AI Factory Ecosystem for AI Server Racks	Infineon Technologies has joined NVIDIA’s MGX AI Factory ecosystem to help transform power delivery for next-generation AI data centers. Infineon’s power management solutions will support NVIDIA’s MGX™ architecture and 800 V<sub>DC</sub> power architecture, an open, modular reference architecture designed for AI factories in the agentic AI era. 800 V<sub>DC</sub> MGX-compatible power racks help existing AI infrastructure scale AI compute performance and power density, creating an upgrade path for future AI infrastructure. Using Infineon’s GaN technology at switching frequencies close to 1 MHz enables ultra-compact bus converters at a efficiency while the combination of Infineon’s proprietary SiC JFET technology and dedicated control ICs enable protection and hot-swap functionality of native 800 V server boards. Infineon’s power management solutions convert power from 800 V to 50 V, 12 V or even down to 6 V. As part of the NVIDIA MGX AI Factory ecosystem, Infineon supports the complete 800 V<sub>DC</sub> power conversion flow down to an intermediate bus voltage and core voltage in systems based on NVIDIA MGX, helping to reduce conversion stages and deliver DC power closer to the rack. This improves power efficiency, simplifies infrastructure, and supports higher-density AI deployments.	29.05.2026 10:00:00	May	news_2026-06-15_5.png	\images\news_2026-06-15_5.png	https://www.infineon.com/press-release/2026/infxx202605-092	infineon.com
Silicon Carbide Power Module operating at 205 °C	Infineon Technologies is introducing a 1300 V SiC ...	13860	Product Release	Silicon Carbide Power Module operating at 205 °C	Infineon Technologies is introducing a 1300 V SiC module within the HybridPACK™ Drive family that is capable of continuous operation at temperatures up to 205 °C. Existing designs typically allow up to 175 °C. This increase enables automotive OEMs and Tier 1 suppliers to deliver higher peak and continuous output power from existing inverter designs or, in new designs, reduce system complexity and overall cost. The increased operating temperature enables up to 15 percent higher output current compared to existing designs, directly translating into higher inverter power density. At the same time, maintaining identical module size, footprint, and interfaces allows seamless integration into existing platforms and enables performance upgrades without costly redesigns or extended development cycles. This drop-in compatibility accelerates time-to-market for next-generation inverter designs while leveraging proven manufacturing and qualification processes. The extended temperature capability can also reduce cooling system requirements. This module is the first one in the HybridPACK Drive family to come with a 1300 V blocking voltage to improve inverter performance, efficiency and robustness beyond battery voltages of 900 V. Infineon will roll out the 205 °C operating capability also across its existing 1200 V SiC module portfolio within the product family.	29.05.2026 08:30:00	May	news_2026-06-15_9.jpg	\images\news_2026-06-15_9.jpg	https://www.infineon.com/market-news/2026/infatv202605-103	infineon.com
Simulator for Rapid Power Electronics Circuit Verification	ROHM has released the ROHM PLECS® Simulator on...	13859	Product Release	Simulator for Rapid Power Electronics Circuit Verification	ROHM has released the ROHM PLECS® Simulator on its website. This simulation tool enables designers of power electronics circuits and system designers to rapidly simulate the operation of ROHM’s power devices online. The tool is based on the PLECS simulation software. The ROHM PLECS Simulator specializes in loss and thermal calculations. This allows users to simulate power loss and temperature rise in a matter of seconds to minutes by selecting a power electronics circuit topology from a list on the website and choosing from the various power devices offered by ROHM. This reduces the time and effort required for optimal device selection during the early stages of circuit design. Twenty different topologies are already available, and ROHM plans to expand the range of device models and topologies in the future, including SiC devices, IGBTs and power modules. It is possible to perform end-to-end simulation, ranging from design loss and thermal verification to waveform checking.	28.05.2026 07:30:00	May	news_2026-06-15_8.jpg	\images\news_2026-06-15_8.jpg	https://www.rohm.com/news-detail?news-title=2026-05-28_news_plecs-simulator&defaultGroupId=false	rohm.com
Partnership on Power MOSFET Manufacturing in the US	Polar Semiconductor, LLC and Nexperia B.V. announc...	13855	Industry News	Partnership on Power MOSFET Manufacturing in the US	Polar Semiconductor, LLC and Nexperia B.V. announced a strategic collaboration to manufacture next generation power MOSFET devices at Polar Semiconductor’s U.S. based wafer foundry. The partnership supports an expanded power MOSFET portfolio while strengthening supply for customers worldwide. By combining Polar’s expertise in power semiconductor manufacturing and ongoing capacity expansion with Nexperia’s power MOSFET technology, the collaboration addresses rapidly growing demand across AI server infrastructure, robotics, industrial, and automotive applications. Polar Semiconductor, a U.S.-based foundry with fully domestic manufacturing operations, runs a high volume wafer manufacturing facility in Minnesota. Polar is IATF 16949 certified. Under the collaboration, Nexperia is developing a portfolio of next generation power MOSFETs.	27.05.2026 09:00:00	May	news_2026-06-15_4.png	\images\news_2026-06-15_4.png	https://www.nexperia.com/about/news-events/press-releases/polar-semiconductor-and-nexperia-partner-on-power-mosfet-manufacturing-to-strengthen-global-supply-stability	nexperia.com
Power Meter with up to 4 Channels	Anritsu released the ML2439A Power Meter, which op...	13867	Product Release	Power Meter with up to 4 Channels	Anritsu released the ML2439A Power Meter, which operates in the frequency range from 10 MHz to 50 GHz (dependent on USB sensor model). Up to four Anritsu USB power sensors are supported simultaneously, including MA244xxA Peak Power Sensors, MA243xxA CW Sensors, MA242xxA and MA241xxA True RMS Sensors. The cassis measures 3.5 in x 8.3 in x 11.2 in (H x W x D), while the instrument allows for using the measurement modes RMS, Pulse, and Peak concurrently. The power of modulated and CW waveforms are displayed in both graphical and textual formats while a GPIB interface allows for legacy integration; Ethernet connectivity is also available.	26.05.2026 15:30:00	May	news_2026-06-15_16.jpg	\images\news_2026-06-15_16.jpg	https://www.anritsu.com/en-gb/test-measurement/news/news-releases/2026/2026-05-26-gb01	anritsu.com
3.3 kV Power Modules to Enable Solid-State Transformers for AI Data Centers	Microchip Technology presented its 3.3 kV HV&#8209...	13858	Product Release	3.3 kV Power Modules to Enable Solid-State Transformers for AI Data Centers	Microchip Technology presented its 3.3 kV HV‑D3 mSiC® Power Modules, designed to simplify and accelerate the adoption of solid-state transformers (SSTs) in AI hyperscale data centers and other high‑voltage power applications. These modules integrate 3.3 kV silicon carbide (SiC) mSiC MOSFETs and Schottky diodes in an industry‑standard 62 mm package, enabling efficient power delivery from the medium‑voltage grid directly to the server rack. As AI data centers continue to scale, token generation is limited by power availability, while efficiency is a defining factor for return on investment. Microchip’s HV‑D3 mSiC modules are engineered specifically to meet these requirements. The modules use Microchip’s mSiC MOSFET technology, which offers a good R<sub>DS(on)</sub> stability over temperature, with packaging that supports 6 kV isolation, incorporates CTI 600‑rated materials and features extended creepage distances, designed to allow safe series connection for high‑voltage operation. A silicon nitride (Si<sub>3</sub>N<sub>4</sub>) substrate delivers the thermal conductivity and power‑cycling capability needed. The HV‑D3 mSiC power modules are available in half‑bridge and common‑source configurations, with and without anti‑parallel Schottky diodes, addressing applications in the 100-300 A range. While optimized for solid-state transformers in AI data centers, these modules also address applications like megawatt charging infrastructure for heavy‑duty vehicles, auxiliary power supplies for rail/heavy transportation, medium‑voltage motor drives, industrial and defense power systems.	26.05.2026 06:30:00	May	news_2026-06-15_7.jpg	\images\news_2026-06-15_7.jpg	https://www.microchip.com/en-us/about/news-releases/products/microchip-launches-3-3-kv-hvd3-msic-power-modules-to-enable-solid-state-transformers	microchip.com
Announcing 3D-PEIM 2026 Tutorial and Panel Session	3D-PEIM 2026, an international symposium dedicated...	13840	Event News	Announcing 3D-PEIM 2026 Tutorial and Panel Session	3D-PEIM 2026, an international symposium dedicated to 3D power electronics packaging and heterogeneous integration, will take place November 16–19, 2026, at Arizona State University in Tempe, Arizona. The symposium will bring together researchers, manufacturers, and industry leaders to discuss emerging technologies and manufacturing approaches shaping the future of advanced power packaging. As part of the 2026 technical program, the Organizing Committee is pleased to announce the addition of four expert-led tutorials and a special panel session to be held on Monday, November 16. The tutorial program will provide attendees with in-depth perspectives on key technical challenges and industry developments across advanced packaging, reliability, materials, and system integration. The 2026 symposium will also feature six plenary speakers, seven technical sessions, poster presentations, industry exhibits, and guided tours of ASU’s MacroTechnology Works facility. Technical focus areas include advanced packaging and 3D integrated modules, thermal management, design and simulation, reliability and failure analysis, passive components, power delivery and energy storage, and materials for advanced packaging. Conference registration will open June 8, 2026.	25.05.2026 11:00:00	May	news_2026-06-01_5.jpg	\images\news_2026-06-01_5.jpg	https://www.3d-peim.org/	3d-peim.org
APEC 2027: Call for Technical Sessions Digest Submissions	APEC 2027, to be held in New Orleans, Louisiana/US...	13835	Event News	APEC 2027: Call for Technical Sessions Digest Submissions	APEC 2027, to be held in New Orleans, Louisiana/USA, from March 7-11, 2027, is now accepting digest submissions for the Technical Sessions. Interested authors wishing to present a Technical Session paper must submit a digest for consideration by August 14, 2026. Instructions for submissions are available at: https://apec-conf.org/speakers/ts-author-info/. To facilitate higher-quality digest and final manuscript submissions, APEC 2027 offers significantly expanded submission windows for both. Topics of interest are divided into fourteen tracks, each with a diverse set of subtopics: AC/DC Converters, DC/DC Converters, DC/AC Inverters, Devices and Components, Magnetics, Power Electronics Integration and Manufacturing, Control, Modeling and Simulation, Motor Drives, Power Electronics for Utility Applications, Renewable Energy Systems, Transportation Power Electronics, Wireless Power Transfer, Power Electronics Applications. The Technical Sessions digest should explain the problem the paper addresses, its major results, and how it differs from the closest existing literature. Technical Session papers presented at APEC must be original material and not have been previously presented or published. The principal criterion used by reviewers in selecting digests for the program will be the usefulness of the work to the practicing power electronics professional. They also value evidence of completed experimental work. Authors will be notified of the decision of paper acceptance on October 12, 2026. Accepted papers final manuscript must be submitted and author registration completed by December 7, 2026.	21.05.2026 06:00:00	May	news_2026-06-01_1.png	\images\news_2026-06-01_1.png	https://apec-conf.org/speakers/ts-author-info/	apec-conf.org
Isolators for Galvanic Isolation of Digital Signals	Würth Elektronik is expanding its range of digital...	13845	Product Release	Isolators for Galvanic Isolation of Digital Signals	Würth Elektronik is expanding its range of digital isolators (WPME-CDIS & WPME-CDIP) with 2-channel bidirectional isolators for I2C communication interfaces. WPME-CDI2C enables bidirectional data transmission at up to 2 MHz, making the isolator suitable for most I2C communication applications. The SOIC-8NB package is pin-compatible with common standard I<sub>2</sub>C isolators on the market. The WPME-CDI2C isolator – designed for bidirectional I<sub>2</sub>C interface applications with data rates of up to 2 MHz – offers an isolation voltage of up to 3750 V<sub>RMS</sub> in accordance with UL 1577 and a basic insulation rating in accordance with IEC 60747-17 (VDE 0884-17). It offers high immunity to system noise, with a common-mode transient immunity (CMTI) of ±150 kV/μs. The device is available from stock in two variants: One features a bidirectional serial data line (SDA) and a bidirectional serial clock line (SCL). The other features a bidirectional serial data line (SDA) and a unidirectional serial clock line (SCL).	20.05.2026 09:30:00	May	news_2026-06-01_11.jpg	\images\news_2026-06-01_11.jpg	https://www.we-online.com/en/news-center/press?instance_ID=5506&d=WPME-CDI2C	we-online.com
EU flagship Project Moore4Power to drive the next Generation of sustainable Power Electronics	Europe’s has launched an ambitious semiconductor R...	13838	Industry News	EU flagship Project Moore4Power to drive the next Generation of sustainable Power Electronics	Europe’s has launched an ambitious semiconductor R&D project involving 62 partners: Moore4Power (More than Moore for Disruptive Innovations in Power Electronics). Led by Infineon Technologies this chips joint undertaking initiative unites large entities, small and medium-sized enterprises and research institutes from 15 European countries to develop the next generation of smart, efficient and sustainable power electronics. With a total project volume of € 91 million, Moore4Power will run for three years aiming to deliver breakthrough innovations that strengthen Europe’s technological sovereignty and sustainability in the field of power electronics. For decades, progress in electronics followed Moore’s Law: smaller transistors, delivering higher performance at lower cost. Today, traditional scaling is reaching physical and economic limits. Moore4Power addresses this challenge by shifting the focus from individual components to system-level innovation. Combining technologies, materials, and functions in smarter, application-driven ways, the initiative unlocks major gains in efficiency, reliability and power density. At the core of Moore4Power is heterogeneous integration, which combines different semiconductor technologies such as silicon (Si), silicon carbide (SiC) and gallium nitride (GaN), together with sensing, control and communication functions to form tightly integrated systems. Each technology is used exactly where it performs best, enabling higher efficiency, improved reliability and more compact designs. Power chiplet technology enables scalable architectures and more flexible product variants at globally competitive cost levels. Moore4Power focuses on high-impact sectors where power conversion drives cost, CO<sub>2</sub> reduction and reliability. One central achievement is the Digital Product Passport (DPP), embedded directly into power modules via wireless access. The DPP will provide lifecycle data such as operating conditions, state of health and remaining lifetime throughout the product’s use.	20.05.2026 09:00:00	May	news_2026-06-01_4.jpg	\images\news_2026-06-01_4.jpg	https://www.infineon.com/press-release/2026/infxx202605-089	infineon.com
Liquid-Cooled 3-Phase AC/DC Converters for High-Power Industrial Applications	Bel Fuse launched its TLP5000 Series of liquid-coo...	13844	Product Release	Liquid-Cooled 3-Phase AC/DC Converters for High-Power Industrial Applications	Bel Fuse launched its TLP5000 Series of liquid-cooled, high-power 3-phase AC/DC converters designed to meet the growing demands of industrial systems operating in extreme conditions. Built for applications such as high-power laser cutting, winding machines, and spinning mills, the platform delivers the reliability and robustness engineers need in demanding environments. While traditional power supplies use forced-air cooling, the rugged AC/DC converter integrates a liquid cooling system with a built-in cooling plate, which eliminates the need for fans and significantly improves reliability, thermal efficiency, and product lifespan. The TLP5000 Series can operate effectively in polluted environments, making it feasible for defense, industrial automation, and other harsh-condition deployments. The converter’s adjustable output voltage provides added design flexibility, allowing engineers to implement it across a wide range of high-power use cases and withstand continuous high-performance for a long lifetime. The TLP5000 Series also supports parallel operation with active current sharing, enabling scalable configurations up to 60 kW. To support modern industrial architectures, the series includes CAN bus communication for real-time monitoring, control, and diagnostics. Hot-plug connectors further enhance system uptime by allowing maintenance or replacement without requiring a full system shutdown, which is essential for automated environments and smart infrastructure where continuous operation is critical.	20.05.2026 08:30:00	May	news_2026-06-01_10.jpg	\images\news_2026-06-01_10.jpg	https://www.belfuse.com/resources/news/bel-launches-tlp5000-series-liquid-cooled-3-phase-ac-dc-converters-for-high-power-industrial-applications	belfuse.com
Gate Driver ICs for three-phase brushless Motors	STMicroelectronics has introduced additional STDRI...	13849	Product Release	Gate Driver ICs for three-phase brushless Motors	STMicroelectronics has introduced additional STDRIVE102 gate-driver ICs for three-phase brushless motors, adding the STDRIVE102P and STDRIVE102BP that feature an SPI interface to simplify configuring the gate current and other settings. Designed for supply voltages from 6 V to 50 V, the STDRIVE102 series enables energy efficiency in battery-operated equipment such as power tools and domestic appliances. Able to drive six external N-channel power MOSFETs, the drivers can be programmed to source up to 1 A and sink up to 2 A and provide slew-rate regulation without external resistors. A standby current of 50 nA typ. helps maximize battery life in portable and battery-powered applications. STDRIVE102 components integrate an advanced charge pump. Integrated 12 V and 3.3 V linear regulators (LDOs) power the internal low-side drivers and embedded analog front-end (AFE), and can also be used to supply external components. The STDRIVE102BP includes a configurable AFE with three programmable-gain amplifiers (PGAs) and three comparators for measuring the motor shunt currents. The PGAs and comparators can be enabled and disabled individually, or the entire AFE can be disabled to save energy. The STDRIVE102P has a simplified AFE with one PGA and one comparator. All STDRIVE102 devices are equipped with a comprehensive set of embedded protection features, including undervoltage lockout (UVLO) to ensure gate drivers operate safely and thermal shutdown. Evaluation boards are available.	19.05.2026 13:30:00	May	news_2026-06-01_15.jpg	\images\news_2026-06-01_15.jpg	https://www.st.com/content/st_com/en/campaigns/stdrive102-advanced-gate-drivers-asp-mcmotdri.html??icmp=tt49443_gl_pron_may2026	st.com
Scalable Power Supply Solutions for Automotive SoCs	ROHM has developed a configurable power supply sol...	13847	Product Release	Scalable Power Supply Solutions for Automotive SoCs	ROHM has developed a configurable power supply solution that combines the PMIC BD968xxC Series with the DrMOS BD96340MFFC, targeting automotive SoCs. This solution was developed based on a "Configurable" design concept enabling flexible adaptation to a wide range of SoC power requirements. It enables scalable power supply designs that support a wide range of SoCs, from low-end to high-end, by flexibly configuring combinations of main configurable PMICs, sub PMICs, and DrMOS devices according to application and performance requirements. All PMICs are designed for a 2.7 V to 5.5 V input voltage range. BD96803QxxC and BD96811FxxC are optimized for standalone operation with low-end SoCs. BD96805QxxC and BD96806QxxC, when combined with the DrMOS BD96340MFFC, can support low-voltage, high-current demands required by high-performance SoCs. The PMICs are housed in wettable flank QFN packages while the DrMOS is in a flip-chip QFN package. All devices are AECQ100 qualified, ensuring high reliability for in-vehicle applications. Typical applications are high-power SoCs for ADAS, DMS or Cockpit integration systems, mid-power SoCs for surround view systems or parking assist systems as well as low-power SoCs used in sensing cameras, body control systems and various sensor control systems.	19.05.2026 11:30:00	May	news_2026-06-01_13.jpg	\images\news_2026-06-01_13.jpg	https://www.rohm.com/news-detail?news-title=2026-05-19_news_power-solutions&defaultGroupId=false	rohm.com
Acquisition of Power Semiconductor Company	Analog Devices, and Empower Semiconductor announce...	13839	Industry News	Acquisition of Power Semiconductor Company	Analog Devices, and Empower Semiconductor announced that they have entered into a definitive agreement under which ADI will acquire Empower in an all-cash transaction for $1.5 billion. As AI compute scales, power density – not just total watts – has become the limiting factor. Delivering high-density, high-efficiency power at the point of compute, while responding to fast-changing demands, is now one of the most critical challenges in system design. Together, ADI and Empower intend to help shape the power delivery architecture for AI and other compute-intensive applications. By enabling power conversion closer to the processor, the combined solution shortens the power delivery path and improves efficiency to support higher-performance, higher-density systems. Building on its know-how in power management, ADI is investing in its system-level platform to deliver a step-change in performance, density, and efficiency from grid to core. The transaction is expected to close in the second half of calendar year 2026.	19.05.2026 10:00:00	May	news_2026-06-01_5.jpg	\images\news_2026-06-01_5.jpg	https://www.analog.com/en/newsroom/press-releases/2026/5-19-2026-adi-to-acquire-empower-semiconductor.html	analog.com
SMT Current Sense Transformers	The CSX7030 series from Coilcraft is a high-isolat...	13842	Product Release	SMT Current Sense Transformers	The CSX7030 series from Coilcraft is a high-isolation, low-loss current sensing transformer designed for high-performance power electronics and automotive applications. It features a chip-style package with a low 3.3 mm profile and is manufactured using a highly automated process to ensure consistent quality and cost efficiency. With a low DCR of 0.52 mΩ on the primary and 1.87 to 34.08 Ω on the secondary side, the series reduces conduction losses and self-heating, making it well-suited for high-current applications up to 20 A. A range of turns ratios from 1:50 to 1:200 provides design flexibility, while bandwidth up to and beyond 1 MHz enables accurate high-frequency current measurement in fast-switching systems such as DC/DC converters, motor drives, inverters, and power management circuits. The CSX7030 is AEC-Q200 qualified, making it suitable for demanding automotive applications. It is specified for isolation voltages of 1000 V<sub>rms</sub> and currents of 20 A with terminating resistances between 2.5 and 10.0 Ω.	19.05.2026 06:30:00	May	news_2026-06-01_8.png	\images\news_2026-06-01_8.png	https://www.coilcraft.com/en-us/products/transformers/power-transformers/current-sensing/csx7030/	coilcraft.com
Total Power Solution for Panther Lake and Wildcat Lake Platforms	Alpha and Omega Semiconductor (AOS) announced a fa...	13850	Product Release	Total Power Solution for Panther Lake and Wildcat Lake Platforms	Alpha and Omega Semiconductor (AOS) announced a family of digital multiphase controllers: the AOZ71049QI, AOZ71149QI and AOZ71146QI. Specifically engineered for Intel IMVP9.3 Vcore power delivery, these 4-rail controllers - when paired with AOS’s benchmark DrMOS and Smart Power Stage (SPS) technology - provide a complete power solution for the latest Intel Panther Lake and Wildcat Lake mobile processor architectures. The AOZ71049QI series utilizes the proprietary AOS Advanced Transient Modulation (A²TM). This technology bridges the gap between digital flexibility and analog efficiency, combining variable-frequency hysteretic peak-current mode control with advanced phase-current sensing. This results in fast transient response and adequate current balance across both transient and DC loads. A key differentiator is the low quiescent power consumption across all Intel IMVP 9.3 power states. <br>To streamline the development cycle, configurations can be programmed directly into the controller’s Multi-Time Programmable Memory (MTP) via a GUI. This eliminates the need for manual solder rework during the tuning phase and reduces the overall bill of materials (BOM). The solution reaches peak performance when paired with the AOZ52986QI Smart Power Stage (SPS). The devices are integrated in 3x4 QFN packages with a symmetrical pinout. The supply range spans from 2.7 V to 22 V, while the continuous output current is 45 A (up to 80 A peak).	18.05.2026 14:30:00	May	news_2026-06-01_16.jpg	\images\news_2026-06-01_16.jpg	https://www.aosmd.com/news/alpha-and-omega-semiconductor-unveils-total-power-solution-next-gen-intel-panther-lake-and	aosmd.com
Distribution Agreement for GaN Devices	Efficient Power Conversion (EPC) announced a globa...	13837	Industry News	Distribution Agreement for GaN Devices	Efficient Power Conversion (EPC) announced a global distribution agreement with Mouser Electronics. This partnership will see Mouser Electronics distribute EPC’s complete portfolio of eGaN® FETS and ICs. This agreement will give Mouser’s customers the opportunity to use the latest EPC GaN technology devices in their designs, enabling the development of smaller, faster, and more efficient power conversion systems across a broad range of applications, including power converters, motor drives for eMobility, robotics and drones.	18.05.2026 08:00:00	May	news_2026-06-01_3.jpg	\images\news_2026-06-01_3.jpg	https://epc-co.com/epc/about-epc/events-and-news/news/artmid/1627/articleid/3313/epc-and-mouser-electronics-announce-global-distribution-deal	epc-co.com
Swiss Company acquires Chinese Developer of high-voltage Circuit Protection Solutions	SCHURTER has completed its acquisition of Biaodi, ...	13841	Industry News	Swiss Company acquires Chinese Developer of high-voltage Circuit Protection Solutions	SCHURTER has completed its acquisition of Biaodi, a China-based developer of high-voltage circuit protection solutions for electric vehicles and new energy applications. Biaodi’s product portfolio significantly expands SCHURTER’s high-voltage offering and includes fuses for EV onboard mobility applications, pyrotechnic (pyro) fuses for safe disconnection in electric vehicle applications as well as AC fuses for charging stations, energy storage systems, data centers, wind power and other high-current applications.	13.05.2026 12:00:00	May	news_2026-06-01_7.jpg	\images\news_2026-06-01_7.jpg	https://www.schurter.com/en/news/schurter-acquires-majority-stake-in-biaodi	schurter.com
Copper Nano-Paste for pressureless Die Attach in Power Semiconductors	Elephantech has added SAphire™ D02 to its SA...	13851	Product Release	Copper Nano-Paste for pressureless Die Attach in Power Semiconductors	Elephantech has added SAphire™ D02 to its SAphire™ low-temperature sintering copper nano-paste lineup, designed for pressureless die attach applications. This enhances manufacturing process flexibility and addresses thermal management issues in the power semiconductor field, including not only die attach but also Thermal Interface Materials (TIMs). In power semiconductor packaging, not only die attach between semiconductor chips and substrates, TIMs used to bond substrates and heat dissipation plates also play a critical part. As die attach is relatively easy to handle due to its small size matching the chip, TIM bonding areas between substrates and heat dissipation plates are significantly larger, making it difficult to apply strong pressure evenly, raising a stronger demand for TIMs applications’ pressureless capability. For instance, for a pressure-assisted production process that requires a bonding condition of 20 MPa, the force applied to the 5 mm square die attach is 500 N (approximately 51 kg), while the force for a 50 mm square TIM will be 50 kN (approximately 5.1 tons).	12.05.2026 15:30:00	May	news_2026-06-01_17.jpg	\images\news_2026-06-01_17.jpg	https://elephantech.com/en/news/press_release_20260512/	elephantech.com
Non-isolated Buck-Boost DC/DC Converters with up to 99 % Efficiency	The TDK-Lambda i9C series is a 1500 W non-isolated...	13848	Product Release	Non-isolated Buck-Boost DC/DC Converters with up to 99 % Efficiency	The TDK-Lambda i9C series is a 1500 W non-isolated DC/DC buck-boost power module designed to maximize system efficiency, reduce thermal stress, and extend battery runtime in demanding industrial and battery-powered applications. The i9C series launches with a 9 – 80 V input, 9.6 – 60 V output model delivering up to 30 A. A second configuration supporting a 9 – 40 V input range with 5 – 36 V output and up to 50 A is planned to follow. At the core of the i9C series is TDK-Lambda’s patented programmable high-efficiency pass-through (PHEPT) technology. PHEPT allows designers to define an input-voltage window in which the module bypasses regulation and directly connects the input to the output, eliminating switching and conversion losses. When operating in this mode, efficiency can reach up to 99 %, significantly reducing heat generation and improving system reliability for engineers, particularly those designing battery-powered systems. The i9C is packaged in a compact, wide quarter-brick form factor with an integral baseplate that supports convection, conduction, or forced-air cooling. Standard control and protection features include negative-logic on/off control, power-good, remote sense, user-adjustable overcurrent protection, low-power sleep mode, and full auto-recovery protection. The user-configurable sleep mode programs the power module into a low-power dissipation state during idle or light-load conditions. The i9C series is designed for use in industrial, communications, test and measurement, and battery-powered applications, including AGVs, AMRs, commercial drones, and humanoid robotics. The modules are certified to IEC/UL/CSA/EN 62368-1 safety standards and carry CE and UKCA markings for the Low Voltage, EMC, and RoHS Directives.	12.05.2026 12:30:00	May	news_2026-06-01_14.jpg	\images\news_2026-06-01_14.jpg	https://www.emea.lambda.tdk.com/uk/news/article/21806	lambda.tdk.com
80 V N-channel MOSFET support 48 V Automotive Systems	Toshiba Electronics Europe introduced two AEC-Q101...	13846	Product Release	80 V N-channel MOSFET support 48 V Automotive Systems	Toshiba Electronics Europe introduced two AEC-Q101 compliant 80 V N-channel MOSFETs supporting 48 V automotive systems. The XPH2R608QB and XPH3R908QB are the first products from the latest-generation U-MOSX-H process to be housed in the SOP Advance (WF) package with wettable flanks. The R<sub>DS(ON)</sub> for the XPH2R608QB is 2.55 mΩ (max.) with a total gate charge (Q<sub>g</sub>) of 95 nC (typ.), and 3.9 mΩ (max.) and 63 nC (typ.) for the XPH3R908QB – both with a gate-to-source voltage (V<sub>GS</sub>) of 10 V (max.). Additionally, the SOP WF package with a copper connector structure reduces MOSFET package resistance, improving efficiency, enhancing heat dissipation, and increasing system reliability. The wettable flank design of the package enhances the visibility of solder fillets, making it easier to verify board mounting conditions using automated optical inspection (AOI) equipment, improving overall system reliability. The XPH2R608QB and XPH3R908QB are suitable for use in N-channel type brushless DC motor drive and non-isolated DC/DC buck converter circuits. In addition to 28 V automotive systems, other applications include motor drives, switching power supplies, and load switches.	12.05.2026 10:30:00	May	news_2026-06-01_12.jpg	\images\news_2026-06-01_12.jpg	https://toshiba.semicon-storage.com/eu/company/news/2026/05/mosfet-20260512-1.html	toshiba.semicon-storage.com
All Battery New Energy Vessel in China	Dukosi announces the launch of China’s first all-b...	13836	Industry News	All Battery New Energy Vessel in China	Dukosi announces the launch of China’s first all-battery new energy vessel equipped with the Dukosi Cell Monitoring System (DKCMS®). The all-battery vessel features a contactless battery management system (BMS) developed by Guangxi Yichuan Intelligent Technology ("Yichuan") powered by lithium-ion battery cells supplied by Eikto New Energy. The adoption of battery power of China’s rivers and inland waterways is primarily driven by national "Dual Carbon" goals and the aspiration to reduce pollution. With over 127,000 km of navigable rivers and canals, China operates the world’s largest business inland waterway system. Eikto has developed DKCMS-based battery management system (BMS) for marine applications that meet stringent safety standards required for type approval certification. The flexibility and scalability of the DKCMS contactless architecture allows Yichuan to cost-efficiently develop and validate class-leading battery systems for a wide range of vessels and power demands and accelerate their time to market.	12.05.2026 07:00:00	May	news_2026-06-01_2.jpg	\images\news_2026-06-01_2.jpg	https://www.dukosi.com/press-release/dukosi-and-yichuan-intelligent-technology-power-first-dkcms-enabled-all-battery-new-energy-vessel-in-china	dukosi.com
High-Power Modules for High-Voltage Energy Systems	Infineon Technologies expands its XHP™ 2 pow...	13843	Product Release	High-Power Modules for High-Voltage Energy Systems	Infineon Technologies expands its XHP™ 2 power module portfolio with variants incorporating CoolSiC™ MOSFETs 2300 V, designed for high-voltage power systems. These 2300 V class devices support DC-link voltages of up to 1500 V, addressing the industry trend toward higher system voltages. The modules are available in several variants, offering on-resistance (R<sub>DS(on)</sub>) values ranging from 1 mΩ to 2 mΩ and isolation voltages of 4 kV or 6 kV. By leveraging silicon carbide technology, the devices reduce both switching and conduction losses compared to conventional silicon-based solutions. This enables inverters to achieve higher efficiency and power density, or to operate at higher switching frequencies to reduce harmonics and system size. The XHP 2 CoolSiC MOSFET modules are well suited for renewable energy applications, including wind, photovoltaic and battery storage systems. Implemented in the XHP 2 package, the modules feature symmetrical switching behavior for direct paralleling in large power converters and offer a standardized platform that enables developers to balance efficiency and performance according to application requirements. All variants integrate Infineon’s .XT interconnection technology, focusing reliability and extended operational lifetime. The modules are also available with a pre-applied thermal interface material, simplifying assembly while supporting consistent thermal performance. These characteristics translate into measurable system-level benefits. In a wind power demonstration system, a power density of 300 kW/l was achieved, while tests in battery storage systems showed semiconductor losses of less than 0.7 percent of the output power.	11.05.2026 07:30:00	May	news_2026-06-01_9.jpg	\images\news_2026-06-01_9.jpg	https://www.infineon.com/market-news/2026/infgip202605-086	infineon.com
Copper Conductors for High-Power Transformers and Motors	Hirect now delivers Continuously Transposed Conduc...	13828	Product Release	Copper Conductors for High-Power Transformers and Motors	Hirect now delivers Continuously Transposed Conductors (CTC), Paper Insulated Copper Conductors (PICC), and Enameled Paper Insulated Copper Conductors (EPICC) - all manufactured at Hirect’s copper processing plant for transformers, traction motors, and other high-power wound components. The conductors are designed to support key infrastructure segments including power grids, railway rolling stock and catenary power supply systems, and industrial power networks. The continuously transposed conductors (CTC) are aimed for high-efficiency transformers, handling 5 to 63 strands per conductor. Strand dimensions range from 2.5 mm to 12.0 mm in width and 1.0 mm to 5.0 mm in thickness, with transposition pitches adjustable from 25 mm to 200 mm. The PICC and EPICC (Paper Insulated Conductor) lines accommodate copper widths up to 20 mm and thicknesses up to 8 mm. Overall insulation thickness is precisely controlled between 0.25 mm and 5 mm.	07.05.2026 09:30:00	May	news_2026-05-15_10.jpg	\images\news_2026-05-15_10.jpg	https://hirect.com/	hirect.com
Fast Charging Company gets Funding and expands into India	Nyobolt announced it has raised $60 million in fun...	13819	Industry News	Fast Charging Company gets Funding and expands into India	Nyobolt announced it has raised $60 million in funding to accelerate its development pipeline and bring its power performance solutions to the autonomous machines that need them most. The round was led by Symbotic, a company in AI-enabled robotics technology for the supply chain, with participation from IQ Capital, Latitude (Phoenix Court), Scania Invest and CBMM. In data centers GPU racks running large-scale AI workloads generate intense transient power demands that legacy UPS infrastructure was never designed to handle. Nyobolt’s fast charging technology is built for these environments, where downtime is not an option and performance cannot be compromised. For example, in Symbotic’s SymBot™ autonomous mobile robots Nyobolt’s performance battery delivers six times more energy capacity than the ultracapacitors previously used, while is 40% lighter, and achieves at least ten times the cycle life of traditional Lithium-Ion technology, enabling continuous, high-intensity 24/7 operations across Symbotic’s warehouse deployments. Nyobolt is also expanding its footprint into India, signing a Memorandum of Understanding with the state of Rajasthan to bring more than 100 MW of off-grid AI data centers and power management infrastructure to one of the world’s fastest-growing digital economies. The Rajasthan partnership marks the first of what Nyobolt expects to be a broader presence across multiple Indian states, with a particular focus on renewable energy integration and grid-independent energy storage.	06.05.2026 06:00:00	May	news_2026-05-15_1.jpg	\images\news_2026-05-15_1.jpg	https://nyobolt.com/resources/news/nyobolt-closes-series-c-round-at-1b-valuation-to-power-the-rise-of-autonomous-machines-physical-ai-applications-and-ai-data-centres/	nyobolt.com
SMT Flat-Wire Inductor for Automotive Electronics	Würth Elektronik introduces its WE-SFIA series of ...	13831	Product Release	SMT Flat-Wire Inductor for Automotive Electronics	Würth Elektronik introduces its WE-SFIA series of flat-wire inductors in 2010, 2013, and 2016 packages. Operating in the temperature range from -40 °C to +180 °C the inductors are available as catalogue components but can also be adapted to meet customer-specific requirements. The WE-SFIA inductors are designed for high-efficiency DC/DC converters in the automotive field, such as single- and multiphase converters, as well as buck and boost converters with high saturation currents of up to 150 A. Other filter choke applications include battery management, motor, audio, and infotainment systems. Flat-wire technology used in the chokes offer several advantages: It is mechanically more robust and enables tighter, more even windings as well as improved heat dissipation. Flat-wire windings also offer a larger cross-sectional area, thus reducing electrical resistance. This results in a higher current-carrying capacity, which provides significant advantages in handling transient current peaks. AC losses, such as the skin effect, are also significantly lower in high-frequency applications than in comparable round-wire variants. The flat-wire inductors are available with values from 0.33 μH to 4.7 μH.	05.05.2026 12:30:00	May	news_2026-05-15_13.jpg	\images\news_2026-05-15_13.jpg	https://www.we-online.com/en/news-center/press?instance_ID=5506&d=we-sfia	we-online.com
European Project develops next Generation of On-Board Chargers	The HiPower 5.0 consortium, overseen by the Fraunh...	13820	Industry News	European Project develops next Generation of On-Board Chargers	The HiPower 5.0 consortium, overseen by the Fraunhofer Institute for Reliability and Microintegration IZM, has produced a 22 kW OBC (on-board charger) with a total volume of four liters, which is far smaller than the current market average of twelve liters. This OBC is based on bidirectional GaN semiconductors from Infineon. The goal of the HiPower 5.0 consortium is to harness the advantages of modern GaN and wide-bandgap semiconductors in market-ready products within a fully European value chain. In addition to the automotive sector, the consortium is also addressing applications in the marine shipping industry. The HiPower 5.0 project brings together partners from ten European nations, including two OEMs, 21 tier-1 and tier-2 suppliers, six specialists for power electronics, ten universities, and seven research institutions. From August 2025 to June 2028, they have been working on six use cases, supported by 33.7 million Euro in funding from the EU and its member states. The German Federal Ministry of Research, Technology, and Space is contributing 5.74 million Euro and the Free State of Saxony is contributing 0.12 million Euro.	05.05.2026 07:00:00	May	news_2026-05-15_2.jpg	\images\news_2026-05-15_2.jpg	https://www.izm.fraunhofer.de/en/news_events/tech_news/a-novel-inverter-redefines-the-limits-of-power-density.html	izm.fraunhofer.de
Film Capacitors for High-Frequency Power Electronics	Converter and inverter designs increasingly operat...	13825	Product Release	Film Capacitors for High-Frequency Power Electronics	Converter and inverter designs increasingly operate at higher switching frequencies, placing stricter requirements on passive components. Film capacitors with dry plastic dielectrics offer a combination of low losses, high reliability and stable capacitance over temperature and frequency, making them well suited for DC-link, snubber, coupling, EMC and output filtering applications. A key design factor is the reduction of parasitic elements such as equivalent series inductance (ESL), which directly impacts switching behavior, EMI performance and thermal stress. In this context, self-healing metallized film capacitors provide an additional advantage by improving long-term reliability under dynamic load conditions. To address application-specific challenges, Electronic Concepts Europe applies its PowerPath methodology, focusing on the improvement of geometry, materials and internal design. This enables tailored capacitor solutions that support higher efficiency, reduced component count and improved thermal management.	05.05.2026 06:30:00	May	news_2026-05-15_7.jpg	\images\news_2026-05-15_7.jpg	https://www.ecicaps.com/	ecicaps.com
Protection for AI Servers and High-End GPUs	Alpha and Omega Semiconductor launched the SmartCl...	13832	Product Release	Protection for AI Servers and High-End GPUs	Alpha and Omega Semiconductor launched the SmartClamp™ family of protected DrMOS. Designed specifically for the extreme power demands of AI servers, data centers, and high-end graphics cards, the SmartClamp family offers accurate Over Current Protection (OCP) and Negative Current Protection (NCP). The flagship AOZ53228QI provides a special safeguard for multiphase voltage regulators (VRs), preventing catastrophic failures in environments where high peak currents are the norm. Traditional protection methods can suffer from delays; even a mere 50 ns OCP delay can result in a 30 A current runaway, risking permanent damage to the high-side MOSFET - especially when inductor saturation occurs. The SmartClamp family uses current limiting directly within the power stage rather than relying solely on the controller. It provides cycle-by-cycle monitoring utilizing an internal rising-edge current ramp to monitor inductor current in real-time, and it is optimized for industry-standard constant-on-time (COT) and fixed-frequency PWM controllers, as well as the company’s own proprietary AOS Advanced Transient Modulator (A2TM) multiphase controllers. Three models for AI servers, data center and high-end graphics cards deliver 60/70/80 A at 18 V while three versions for Gaming and AI PCs provide 55/60/70 A at a voltage of 25 V.	30.04.2026 13:30:00	Apr	news_2026-05-15_14.jpg	\images\news_2026-05-15_14.jpg	https://www.aosmd.com/news/alpha-and-omega-semiconductor-unveils-smartclamp-protected-drmos-family-ai-servers-and-high	aosmd.com
Broadband Amplifier now for Power Classes up to 1000 W	Rohde & Schwarz expanded its R&S®BBA300 family...	13826	Product Release	Broadband Amplifier now for Power Classes up to 1000 W	Rohde & Schwarz expanded its R&S®BBA300 family, a series of solid-state broadband amplifiers. With the introduction of the R&S BBA300-DE500 and R&S BBA300-DE1000 models, this amplifier now covers power requirements of 500 W and 1000 W. Designed as single-band solutions, these units cover the entire frequency range from 1 GHz to 6 GHz without band switching, which increases efficiency in automated test sequences. Precise generation of high field strengths is essential, particularly for vehicle component testing, full-vehicle testing, and High-Intensity Radiated Fields (HIRF) applications. The BBA300 family utilizes Solid-State Power Amplifier (SSPA) technology, offering higher availability and robustness compared to traditional Traveling Wave Tube (TWT) amplifiers. The units are designed for several modulation types, from standard amplitude and pulse modulation to complex OFDM signals. The systems are housed in 30U racks pre-configured for mounting horn antennas. To minimize cable loss at high frequencies, the RF output (optimized with 7/16 connector characteristics) is positioned centrally in the rack. This shortens the path to the antenna. The BBA300 family features a modular concept. Existing systems can be expanded or combined with other amplifier families, such as the BBA130/150, to create tailored system solutions.	30.04.2026 07:30:00	Apr	news_2026-05-15_8.jpg	\images\news_2026-05-15_8.jpg	https://www.rohde-schwarz.com/de/unternehmen/news-und-presse/all-news/rohde-schwarz-expands-broadband-amplifier-portfolio-with-new-power-classes-up-to-1000-w-for-automotive-aerospace-and-defense-applications_229356-1621512.html	rohde-schwarz.com
AC/DC Wall-Mount Adapters for Medical and other Applications	XP Power introduces the AMF60 series of 60 W wall-...	13830	Product Release	AC/DC Wall-Mount Adapters for Medical and other Applications	XP Power introduces the AMF60 series of 60 W wall-mount AC/DC power supplies in an IP42-rated enclosure for medical, home healthcare, and industrial applications. The AMF60 series meets DOE Level VI energy efficiency requirements, is ready for Level VII, and complies with EU2019/1782 for external power supplies, with no-load power consumption below 0.15 W. The series provides four output voltage models, 12 V, 15 V, 19 V, and 24 V<sub>DC</sub>, and is specifically designed for applications in respiratory care, patient monitoring, diagnostic equipment, imaging systems and test & measurement. A 80 to 264 V<sub>AC</sub> input range supports global operation. Interchangeable AC input plugs for use in North America, Europe, the UK, and China are available, allowing a single platform to be used across regions. The AMF60 series complies with medical and ITE safety standards, including ANSI/AAMI ES60601-1, EN60601-1, EN60601-1-11, IEC60601-1, IEC60601-1-11, and UL/IEC/EN62368-1. The units feature Class II construction, reinforced insulation, and 2 x MOPP isolation (4000 V<sub>AC</sub> input-to-output), with patient leakage current of 90 μA, supporting integration into BF-rated medical applications. Compliance with Class B conducted and radiated emissions (EN55032/EN55011) can remove the need for external EMC filtering. Additional features include 200 mV pk-pk ripple and noise for a stable DC output, and overvoltage and overload protection with auto-recovery to protect both the power supply and connected equipment. The units operate over a temperature range of 0 to +60 °C and have an MTBF of 200,000 hours (MIL-HDBK-217F).	28.04.2026 11:30:00	Apr	news_2026-05-15_12.jpg	\images\news_2026-05-15_12.jpg	https://www.xppower.com/resources/press-releases/60w-wall-mount-healthcare-industrial	xppower.com
TVS Diodes for Automotive Power Protection	Littlefuse launched its TPSMC, TPSMD, and TP5.0SMD...	13829	Product Release	TVS Diodes for Automotive Power Protection	Littlefuse launched its TPSMC, TPSMD, and TP5.0SMDJ high-voltage transient voltage suppression (TVS) diode series, expanding the TP Series portfolio with devices specifically engineered for automotive high-voltage power electronics applications including battery disconnect units (BDUs), high-voltage HVAC systems, and positive temperature coefficient (PTC) heaters. These TVS diodes deliver standoff voltages up to 400 V supporting surge currents up to 300 A and peak pulse power up to 5 kW, while providing a response time of typically less than 1 ps. The devices are AEC-Q101 qualified and PPAP capable for automotive reliability requirements. Integrated in DO-214AB (SMC) surface-mount packages the devices are IEC-61000-4-2 ESD-compliant up to 30 kV.	28.04.2026 10:30:00	Apr	news_2026-05-15_11.jpg	\images\news_2026-05-15_11.jpg	https://www.littelfuse.com/company/news-and-events/in-the-news/newspages-articles/press-releases/2026/littelfuse-launches-high-voltage-tpsmc-tpsmd-tp50smdj-tvs-diodes-for-automotive-power-protection	littelfuse.com
Wireless Power Chipset for Wearables	ROHM has developed a wireless power supply IC chip...	13827	Product Release	Wireless Power Chipset for Wearables	ROHM has developed a wireless power supply IC chipset consisting of the receiver - ML7670 - and transmitter - ML7671 - compatible with Near Field Communication (NFC) technology for compact wearables such as smart rings and smart bands as well as peripheral devices like smart pens. This chipset builds on the ML7660 receiver and ML7661transmitter. The maximum power transfer is specified at 250 mW, while peripheral components such as the switching MOSFETs required to supply power to the charging IC are built in. The ML7670 power receiver achieves a maximum power transfer efficiency of 45 % in the 250 mW low output range in a package measuring 2.28 mm × 2.56 mm × 0.48 mm. All firmware required for wireless power delivery is embedded directly within the IC, eliminating the need for a host MCU. Compliance with NFC Forum (WLC 2.0) enables power transfer while maintaining compatibility with existing devices. Evaluation boards and reference designs are also offered to facilitate integration.	28.04.2026 08:30:00	Apr	news_2026-05-15_9.jpg	\images\news_2026-05-15_9.jpg	https://www.rohm.com/news-detail?news-title=2026-04-28_news_wireless-charge&defaultGroupId=false	rohm.com
Strategic Collaboration for 900 V EV Platforms	Onsemi announced an expanded strategic collaborati...	13821	Industry News	Strategic Collaboration for 900 V EV Platforms	Onsemi announced an expanded strategic collaboration with NIO to power next-generation electric vehicle (EV) platforms. Building on a multi-year partnership, the companies are more closely engaging to accelerate NIO’s transition from 400 V to 900 V architectures by using onsemi’s EliteSiC M3e technology. The expanded collaboration builds on a partnership, which began with onsemi’s EliteSiC technology supporting NIO’s 400 V platforms and has evolved into a strategic, system-level alignment. Today, onsemi’s EliteSiC technology underpins NIO’s transition to 900 V architectures, including its latest flagship SUV, the ES9, and additional model. The companies’ collaboration reflects a broader shift in the auto industry toward closer alignment between automakers and semiconductor companies, as vehicles become more power-intensive. By supporting system-level integration, onsemi is helping customers bring scalable, higher-performance electric vehicle platforms to market more quickly and efficiently while reducing development complexity and accelerating execution. This approach is becoming increasingly important as automakers transition to higher-voltage architectures and more advanced electric drive systems.	27.04.2026 08:00:00	Apr	news_2026-05-15_3.jpg	\images\news_2026-05-15_3.jpg	https://www.onsemi.com/company/news-media/press-announcements/en/onsemi-and-nio-expand-strategic-collaboration-to-accelerate-next-generation-900v-ev-platforms	onsemi.com
Discrete Power Solutions	RECOM introduces power ICs and SMD transformers, e...	13814	Product Release	Discrete Power Solutions	RECOM introduces power ICs and SMD transformers, enabling customers to design their own discrete DC/DC isolated power supplies. The range includes three different topology transformer drivers – flyback, push-pull, and full bridge, integrated and external MOSFET secondary side rectification solutions, and a range of standard sub-miniature SMD transformers that cover the most common input/output and isolation voltages. The RVPWxxx series flyback power ICs are available with either integrated switches or with a gate drive output for an external MOSFET. These wide input voltage range regulated ICs have three different feedback modes on the same pin: Primary Side Regulation, where the output is regulated by monitoring the primary side waveform to avoid the need for an optocoupler, Secondary Side Regulation, where the output is regulated by optocoupler feedback to maintain the isolation, or Direct DC monitoring for non-isolated applications. The RVPxxx Push-Pull and Full-Bridge transformer drivers are available in DFN22 packages. They incorporate all the timing circuits and overcurrent monitoring functions. The heart of any isolated DC/DC converter is the transformer, so RECOM offers a standard range of SMD transformers with isolations from 1.5 kV<sub>DC</sub> up to 5 kV<sub>AC</sub> ; custom transformers according to individual specifications are also possible. RECOM also offers the RVSxxx range of secondary side rectification solutions including a fully integrated full bridge rectifier IC in a DFN22 package, a self-powered external MOSFET rectifier solution that can operate either high side or low side, and a bidirectional integrated rectifier designed for battery cell charging/discharging.	22.04.2026 11:30:00	Apr	news_2026-05-01_12.jpg	\images\news_2026-05-01_12.jpg	https://recom-power.com/en/knowledgebase/newsroom/rec-n-recom-unlocks-discrete-power-design-466.html?4	recom-power.com
Production Start for third Generation of SiC Devices	Bosch has started to introduce its third-generatio...	13823	Industry News	Production Start for third Generation of SiC Devices	Bosch has started to introduce its third-generation silicon carbide chips and is supplying samples to global automakers. Bosch has invested around 3 billion euros in semiconductors as part of Europe’s IPCEI (Important Projects of Common European Interest) funding programs for microelectronics and communication technology. Its wafer fab in Reutlingen, Germany, develops and manufactures the third generation SiC chips on 200-millimeter wafers. In September 2023, Bosch acquired a second fab for SiC chip manufacturing in Roseville, California, and is currently equipping it with production facilities. The company is investing an additional 1.9 billion US-Dollar in the U.S. plant, which plans to manufacture and deliver its first SiC chips this year – initially as samples for customer trials. Originally developed for sensors, the so-called "Bosch process" enables manufacturing of high-precision vertical structures in silicon carbide. This design increases the chips’ power density – a decisive factor for the third generation’s performance. Analyses by the market research and consulting company Yole Intelligence forecast that the global market for SiC power semiconductors will grow from 2.3 billion U.S. dollars in 2023 to around 9.2 billion U.S. dollars by 2029, driven primarily by electromobility.	22.04.2026 10:00:00	Apr	news_2026-05-15_5.jpg	\images\news_2026-05-15_5.jpg	https://www.bosch-presse.de/pressportal/de/en/a-leap-in-semiconductor-efficiency-bosch-introduces-third-generation-of-sic-chips-282432.html	bosch.com
5th Generation SiC MOSFETs	ROHM has developed the latest device of its EcoSiC...	13811	Product Release	5th Generation SiC MOSFETs	ROHM has developed the latest device of its EcoSiC™ series: the 5th Generation SiC MOSFETs for high-efficiency power applications. This technology is suitable for e. g. xEV traction inverters, onboard chargers (OBCs), DC/DC converters and electric compressors in automotive applications as well as for industrial equipment where it fits into power supplies for AI servers and data centers, PV inverters, ESS (Energy Storage Systems), UPS (Uninterruptible Power Supplies), eVTOL, AC servos etc. The ON resistance of the 5th Generation SiC is reduced by approximately 30 % during high temperature operation (T<sub>j</sub> = 175 °C) compared to conventional 4th Generation products (under the same breakdown voltage and chip size conditions).	21.04.2026 08:30:00	Apr	news_2026-05-01_9.jpg	\images\news_2026-05-01_9.jpg	https://www.rohm.com/news-detail?news-title=2026-04-21_news_sic-mosfet&defaultGroupId=false	rohm.com
1-Cell Li-ion Battery Protection IC for use with Low-Side MOSFETs	Nisshinbo Micro Devices released the NB7130 single...	13833	Product Release	1-Cell Li-ion Battery Protection IC for use with Low-Side MOSFETs	Nisshinbo Micro Devices released the NB7130 single-cell Li-ion battery protection ICs in a WLCSP-8-ZA1 package for applications including hearing aids and wearable devices, smartphones, and handheld data terminals. The NB7130 is equipped with all standard safety features, such as overcharge/over-discharge voltage, charge/discharge overcurrent and short circuit detection. The additional safety measures are mainly focussed on the detection range and improved accuracy level of these measurements, which is particularly important for small devices worn on the human body to prevent unintentional injuries when the Li-ion battery may fail. It provides overcharge and over-discharge detection (OVP & UVP), overcurrent detection (OCP) and a low current sense voltage. Using a small (R<sub>sens</sub>) current-sense resistor causes lower heat generation at high currents. Charging a deeply discharged battery from 0 V can cause an internal short circuit; therefore, the inhibition threshold voltage can be set in a 0.001 V step rate from a safety perspective. A T<sub>IN</sub> pin is available to connect a thermal sensor to monitor the temperature of the battery cell. An additional STB input offers a Forced Standby Function to set the product into a standby mode. The supply current in normal mode is 3.00 μA / Max. 6.00 μA and max 0.04 μA in standby mode.	20.04.2026 14:30:00	Apr	news_2026-05-15_15.jpg	\images\news_2026-05-15_15.jpg	https://www.nisshinbo-microdevices.co.jp/en/products/lithium-ion-battery-protection/introduction/	nisshinbo-microdevices.co.jp
Pooling Microelectronics Expertise in Northern Germany	With the launch of the Northern Chip Network e.V. ...	13824	Industry News	Pooling Microelectronics Expertise in Northern Germany	With the launch of the Northern Chip Network e.V. (NCN) at DESY in Hamburg/Germany, companies, universities, research institutions, and innovation partners from the Hamburg and Schleswig-Holstein region are pooling their expertise to strengthen collaboration, initiate partnerships, and further enhance the region’s competitiveness, innovative abilities, and visibility. The network aims to more closely link existing strengths in research, education, and industry. Northern Germany possesses expertise across the entire microelectronics value chain - from university education and basic research, through process, product, and technology development, to industrial semiconductor manufacturing. At launch, the NCN includes global industrial companies such as Nexperia, NXP Semiconductors, Semikron Danfoss, Vishay Siliconix Itzehoe GmbH, and X-FAB MEMS Foundry Itzehoe. In addition, there are research partners such as the DESY, the Fraunhofer Institute for Silicon Technology (ISIT), universities such as Kiel University (CAU), the Kiel University of Applied Sciences, and the Hamburg University of Technology (TUHH); as well as key regional innovation and sustainability partners such as the Itzehoe Innovation Center (IZET), the Hamburg Renewable Energy Cluster (EEHH), and the Schleswig-Holstein Society for Energy & Climate Protection (EKSH). As an open network, the Northern Chip Network invites other interested companies, universities, research institutions and regional stakeholders to contribute to its future work.	20.04.2026 11:00:00	Apr	news_2026-05-15_6.jpg	\images\news_2026-05-15_6.jpg	https://northernchipnetwork.de/	northernchipnetwork.de
Dynamic High Power DC E-Load	ITECH launched the IT8100A/E Series Ultra-Dynamic ...	13813	Product Release	Dynamic High Power DC E-Load	ITECH launched the IT8100A/E Series Ultra-Dynamic High Power DC E-Load. Designed for high power density, the IT8100A/E series deliver up to 7.2 kW in a compact 3U chassis (150 V model) and can scale to 1.8 MW through fiber-optic master-slave paralleling, meeting high-voltage and high-current testing requirements. Available in 60 V, 150 V, 600 V, and 1200 V ranges, with standalone power from 2 kW to 86.4 kW, the series features several operating modes – including dynamic, sequence, and advanced loading functions – for performance in applications such as Al server power supplies, power modules, fuel cells, EV charging station, solar array and power electronics. It offers a current slew rate up to 150 A/μs per unit. With 1.5× short-time overloading capability (≤60 s, Ta ≤ 25 °C), it covers transient peak power demands during testing and enables system sizing based on typical operating power rather than peak power, meeting the requirements of power modules, battery packs, and other devices under surge and extreme operating conditions.	20.04.2026 10:30:00	Apr	news_2026-05-01_11.jpg	\images\news_2026-05-01_11.jpg	https://www.itechate.com/en/news/high-power-dc-electronic-load-IT8100AE.html	itechate.com
President of ESIA appointed	The General Assembly of the European Semiconductor...	13805	People	President of ESIA appointed	The General Assembly of the European Semiconductor Industry Association (ESIA) elected Erik Rein, Executive Vice President and Board Member Mobility Electronics responsible for semiconductor business at Bosch, as the organisation’s new President. He succeeds Michael Budde, who has stepped down from the ESIA Presidency following his recent change of responsibilities within Bosch. Erik Rein has worked in semiconductor-based mobility solutions, manufacturing, purchasing, and quality management. In his position, he is responsible for Bosch’s global semiconductor and sensor business.	20.04.2026 08:00:00	Apr	news_2026-05-01_3.png	\images\news_2026-05-01_3.png	https://www.eusemiconductors.eu/esia	eusemiconductors.eu/esia
Expanded Capacity for Validation and Services in China	Würth Elektronik eiSos Group opened the Laboratory...	13807	Industry News	Expanded Capacity for Validation and Services in China	Würth Elektronik eiSos Group opened the Laboratory Phase II at its Asia Quality Design Center (QDC Asia) in Shenzhen, China. Established in August 2008, QDC Asia spans approximately 4,700 m², with a dedicated testing area of 1,700 m² housing over 300 pieces of high-precision testing equipment. Operating in strict compliance with ISO/IEC 17025 and ISO/IEC 17043 standards, the center holds accreditations as a testing laboratory, a proficiency testing provider, and a lab recognized by VDE (TDAP), UL (WTDP), and IEC (CTF2). Initially focused on pre-shipment product inspection for production, the Laboratory has evolved into a comprehensive testing center offering a wide range of services including product incoming inspection testing, design change validation, reliability testing, product conformity judgment, material compliance, failure analysis, etc. However, with existing lab space maximized and approaching saturation, expansion became imperative to support the Group’s growing business needs. The newly added 352 m² laboratory is a strategic response to this demand. Primarily designed for environmental and electrical performance testing, the facility is equipped with an energy-efficient VFD chiller featuring magnetic bearing technology, as well as a scalable electrical system capable of meeting peak load demands. A total of 38 testing devices will be gradually deployed across phases to align with actual business needs: 19 units on the ground floor, followed by an additional 19 on a second level. The expansion thus lays the foundation for a significant increase in capacity: In future, throughput for environmental testing is expected to grow by 170 percent compared to current capacity.	16.04.2026 10:00:00	Apr	news_2026-05-01_5.jpg	\images\news_2026-05-01_5.jpg	https://www.we-online.com/en/news-center/press?instance_ID=5506&d=laboratory-qdc-shenzhen	we-online.com
Automotive Power Module with integrated MCU and Gate Driver for Three-Phase BLDC Motor Control	Toshiba Electronics Europe begins engineering samp...	13810	Product Release	Automotive Power Module with integrated MCU and Gate Driver for Three-Phase BLDC Motor Control	Toshiba Electronics Europe begins engineering sample shipments of the AEC-Q100 compliant TB9M030FG, an addition to the SmartMCD™ series that integrates a microcontroller (MCU) and motor driver. The product is suitable for low-speed, sensorless field-oriented control (FOC) of BLDC motors in automotive applications, including electric water pumps, oil pumps, fans, and blowers. Sensorless control of three-phase BLDC motors presents challenges in accurately detecting rotor position at low speeds, creating a strong demand for high-performance sensorless FOC technology capable of delivering stable control from a standstill. The TB9M030FG integrates a 32-bit MCU with an Arm® Cortex®-M0 core, 64 kB flash memory and an additional 12 kB of ROM and 4 kB of RAM. The gate driver controls and drives the N-channel power MOSFETs for three-phase BLDC motor operation. The product also features a vector engine co-processor, a LIN transceiver and a power system that can operate at automotive battery levels. The device is housed in a QFP48 package, measuring 9 mm × 9 mm. Toshiba’s sensorless control technology enables position FOC control from zero speed through the low-speed range when used with PM-Synchronous motors, i.e. three-phase BLDC motors with magnetic anisotropy in the rotor (L<sub>d</sub> ≠ L<sub>q</sub>), allowing the generation of reluctance torque due to differences in magnetic reluctance within the motor. Compared with the conventional high-frequency injection method, in which the voltage (or current) signal is superimposed and injected into the motor to detect rotor position, this approach eliminates noise caused by harmonic injection and also leads to quieter motor operation.	16.04.2026 07:30:00	Apr	news_2026-05-01_8.jpg	\images\news_2026-05-01_8.jpg	https://toshiba.semicon-storage.com/eu/company/news/2026/04/automotive-20260416-1.html	toshiba.semicon-storage.com
Desktop Power Supply for Medical and Industrial Applications	Mascot has introduced the 4320 desktop power suppl...	13815	Product Release	Desktop Power Supply for Medical and Industrial Applications	Mascot has introduced the 4320 desktop power supply designed for use across medical, industrial and professional environments. Delivering up to 80 W of output power, it features a universal input range of 90 - 264 VAC and is available with fixed output voltages spanning 12, 16, 24, 48 and 64 V as standard, with a 5 V version and other user-defined outputs available on request. The switching frequency is approximately 65 kHz. Both short-circuit and thermal protection are incorporated to protect critical power supply components from electrical anomalies that have the potential to cause failure or damage, a particularly important attribute in medical and other reliability-critical applications. 4320 is medically certified to IEC 60601-1 edition 3.1 and 3.2, while also meeting IEC 60601-1-11 requirements for home healthcare environments. EMC performance is aligned with IEC/EN 60601-1-2 edition 4.1 for safe and stable operation in crowded electronic environments. In addition, the 4320 complies with IEC 62368-1 and IEC 60335-1, making it suitable for a wide range of household, AV and ICT applications. The 4320 features a standard 2-pin IEC 60320 (C8) input, with options for 3-pin connectors or fixed mains cords. On the DC side, exchangeable plug solutions are available, supported by standard cord sets or user-specific configurations, enabling straightforward adaptation for different use cases. Furthermore, Mascot offers customisation capabilities for the 4320 series. Accessories for the 4320 series include a wall-mount bracket, 2-pin AC cords, exchangeable DC plugs (individual or in packs) and exchangeable DC push-on terminals.	15.04.2026 12:30:00	Apr	news_2026-05-01_13.jpg	\images\news_2026-05-01_13.jpg	https://www.mascot.no/news/introducing-the-new-4320-desktop-power-supply	mascot.no
Third-Generation 1500 W wide-range AC/DC Power Modules	TDK Corporation introduced the TDK-Lambda 1500 W r...	13834	Product Release	Third-Generation 1500 W wide-range AC/DC Power Modules	TDK Corporation introduced the TDK-Lambda 1500 W rated PFE1500FB AC/DC power modules. This third-generation series accepts a wide 85 to 305 V<sub>AC</sub> input range, providing the ability to operate on a 277 V<sub>AC</sub> nominal input to power industrial, lighting, and building automation equipment. The module’s metal baseplate allows operation where convection or forced air cooling is not feasible, with the ability to be mounted in a sealed outdoor enclosure or where liquid-cooling is preferred. The five-sided case also provides easier thermal management and lower radiated EMI. The PFE1500FB features a PMBus interface with read/write capability, enabling remote monitoring and programming. This includes output voltage, overvoltage, overcurrent, and undervoltage adjustment. Modules can be connected in parallel for higher output current using the droop mode current share, which can also be programmed using the PMBus. Other signals and functions include remote on/off, a power good signal and a 9.5 - 14 V, 200 mA auxiliary voltage. The output voltage adjustment range is 38.4 - 57.6 with typical efficiencies of 92 % at 230 V<sub>AC</sub> input. The no-load power consumption is 2 W with the output voltage enable toggled to "off". Overall dimensions for the power module are 157.2 mm × 89.9 mm × 15.2 mm (L × W × H) and the "weight" is 540 g. Safety certifications include IEC/UL/CSA/EN62368-1 and carry the CE and UKCA marking for the Low Voltage, EMC and RoHS Directives. The units also comply with EN55032-A with external filtering, meeting the IEC 61000-4 immunity standards. The power supply has 3000 V<sub>AC</sub> input to output, 2500 V<sub>AC</sub> input to ground, and 1500 V<sub>DC</sub> output to ground isolation.	14.04.2026 15:30:00	Apr	news_2026-05-15_16.jpg	\images\news_2026-05-15_16.jpg	https://www.emea.lambda.tdk.com/uk/news/article/21612	lambda.tdk.com
Intelligent Power Modules from India	In presence of India’s Prime Minister, Mr. Narendr...	13804	Industry News	Intelligent Power Modules from India	In presence of India’s Prime Minister, Mr. Narendra Modi, Alpha and Omega Semiconductor (AOS) has officially inaugurated its Kaynes Semicon’s OSAT facility in Sanand, Gujarat. Now AOS’ proprietary IPM5 manufacturing process is implemented at the Sanand facility. The IPM5 (Intelligent Power Modules) integrate 17 different dies into a single package, providing the core "intelligence" for next-generation motor controls and energy-efficient appliances. From groundbreaking to product delivery it took 14 months to establish the facility.	14.04.2026 07:00:00	Apr	news_2026-05-01_2.png	\images\news_2026-05-01_2.png	https://www.aosmd.com/news/alpha-and-omega-semiconductor-announces-commencement-production-intelligent-power-module-ipm5	aosmd.com
5 kW GaN 3-Phase Inverters for Robotics and Light Evs	Efficient Power Conversion (EPC) introduced the EP...	13809	Product Release	5 kW GaN 3-Phase Inverters for Robotics and Light Evs	Efficient Power Conversion (EPC) introduced the EPC9186HC2 and EPC9186HC3 evaluation boards, two high-performance 3-phase BLDC motor drive inverter platforms designed for applications including robotics, industrial automation, light electric vehicles, electric scooters, forklifts, agricultural machinery, battery-powered mobility systems, and high-power drones. Supporting motor drive systems up to 5 kW, the boards enable engineers to evaluate compact, high-efficiency inverter architectures based on 100 V EPC2361 eGaN® FET technology. The EPC9186HC2 and EPC9186HC3 are based on the EPC9186 platform that was released earlier and have the same hardware architecture. They have another power stage made up of EPC2361 GaN devices that improves conduction performance and allows for higher-current and lower cost operation in motion-control environments. The EPC9186HC2 integrates two EPC2361 eGaN FETs in parallel per switch position, while the EPC9186HC3 uses three devices in parallel, further reducing equivalent on-resistance and improving efficiency at higher load currents. The boards support phase currents up to 150 A<sub>RMS</sub>, depending on the selected current-sensing configuration, and PWM switching frequencies up to 120 kHz, enabling evaluation of high-density motor drive solutions with fast switching transitions and improved system responsiveness. The inverter platforms operate across a DC input range up to 76 V and feature switching behavior with dv/dt around 6 V/ns, helping reduce torque ripple and acoustic noise in precision motor drive applications. The boards integrate key functions required for three-phase inverter evaluation - including gate drivers, high-bandwidth phase-current sensing, voltage monitoring, housekeeping power supplies, and protection features such as over-current detection and input undervoltage lockout.	14.04.2026 06:30:00	Apr	news_2026-05-01_7.jpg	\images\news_2026-05-01_7.jpg	https://epc-co.com/epc/about-epc/events-and-news/news/artmid/1627/articleid/3296/epc-releases-5-kw-gan-3-phase-inverters-for-robotics-and-light-evs	epc-co.com
300 mm Fab: First Tool Move-In in Itzehoe	At Vishay’s facility in Itzehoe/Germany the first ...	13822	Industry News	300 mm Fab: First Tool Move-In in Itzehoe	At Vishay’s facility in Itzehoe/Germany the first tools have moved in – kicking off with fully automated wet chemistry equipment from Siconnex. Using spezialized equipment, the Siconnex equipment were set into their final footprints in this 300 mm fab. Vishay is setting up a fully automated production line dedicated to automotive MOSFETs. By taking this strategic step in Europe, Vishay is sending a decisive signal regarding supply security for the European automotive sector. In an era where "supply chain sovereignty" has become the defining priority, this expansion is set to create approximately 150 new jobs at the facility. The systems, custom-tailored for Vishay, are specifically configured for metallic etching (AlCu) and post-dry-etch polymer removal. Siconnex got this position primarily due to its BATCHSPRAY® technology, which delivers in critical areas like footprint efficiency, resource management as well as automation & safety.	13.04.2026 09:00:00	Apr	news_2026-05-15_4.jpg	\images\news_2026-05-15_4.jpg	https://www.siconnex.com/siconnex/news/first-tool-move-in-vishay-itzehoe	siconnex.com
PCIM Expo & Conference 2026: Discover the Future of Power Electronics	From 9 – 11 June 2026, Nuremberg will once again b...	13803	Event News	PCIM Expo & Conference 2026: Discover the Future of Power Electronics	From 9 – 11 June 2026, Nuremberg will once again become the international hub for power electronics. The PCIM Expo & Conference brings together experts from around the world to discuss the latest developments and future trends in the industry. The event provides a comprehensive overview of the innovative products, solutions, and trends that will help shape the power electronics industry in the future. This year, for the first time, a new stage will shine a light on the topic of artificial intelligence and data centers. The E-Mobility & Energy Storage Stage will focus on current and future developments in power electronics for use in electromobility and energy storage. At the PCIM Expo 2026, the University Research Zone will offer exclusive access to the most recent findings from power electronics research. Each day will feature different universities and research institutes offering insights into the latest developments from the world of research. Across approximately 40,000 square meters of exhibition space, more than 650 companies from 27 countries will be showcasing their newest and most tried-and-tested technologies.	13.04.2026 06:00:00	Apr	news_2026-05-01_1.JPG	\images\news_2026-05-01_1.JPG	https://pcim.mesago.com/nuernberg/en/press/press-releases/pcim-press-releases/Preview-2026.html	pcim.mesago.com
OCP and Current/OS: Strategic Alliance to Enable DC Adoption in AI Data Centers	The Current/OS Foundation highlights the progress ...	13808	Industry News	OCP and Current/OS: Strategic Alliance to Enable DC Adoption in AI Data Centers	The Current/OS Foundation highlights the progress of its strategic collaboration with the Open Compute Project Foundation (OCP), concluded through the signing of an alliance aimed at accelerating the development of Direct Current-powered data center architectures. The foundation aims to drive industry alignment around DC solutions for AI-driven infrastructures, reflecting a shared ambition to transform digital infrastructures into more efficient, sustainable, and high-performance systems, and to establish new standards for the electrical architecture of next-generation data centers. The collaboration is structured around several key deliverables including a comprehensive white paper, Data Center Facility – Low Voltage Direct Current Power Distribution, detailing architectures and best practices for scalable AI infrastructure. It is complemented by a training program available in the OCP Academy to educate engineers and professionals on open-standard system design and deployment and it also includes a formal specification document defining technical requirements, interfaces, and interoperability standards to enable vendor-agnostic innovation. The alliance between Current/OS and OCP aims to promote the adoption of open standards for DC architectures in data centers and to unite an ecosystem of industrial, technological, and academic stakeholders around this transition, addressing the growing challenges of power consumption, performance, and sustainability. The two organizations will work to reduce electrical conversion stages, increase power density for AI workloads, and enhance infrastructure resilience while simplifying electrical architectures. The initiative also aligns with open and interoperable standards to foster innovation, industrial adoption, and compatibility across the ecosystem.	09.04.2026 11:00:00	Apr	news_2026-05-01_6.jpg	\images\news_2026-05-01_6.jpg	https://currentos.org/	currentos.org
Power Modules for Traction Inverters	StarPower expands its portfolio with half-bridge a...	13818	Product Release	Power Modules for Traction Inverters	StarPower expands its portfolio with half-bridge and three-phase bridge modules for electric drive systems. The solutions are based on the company’s latest chip generation. For example, a family of transfer-molded half-bridge modules designed for traction inverters in power classes starting from 250 kW. These modules are available in both silicon and silicon carbide technologies and utilize the latest Gen3 trench IGBT generation as well as second-generation SiC MOSFETs with conduction losses reaching down to 1.3 mμ R<sub>DS(on)</sub> at module level. Si<sub>3</sub>N<sub>4</sub> AMB substrates combined with a pin-fin baseplate design enhance heat dissipation. The product range includes 750 V and 1200 V variants, featuring Gen3 IGBT modules rated at 750 A<sub>rms</sub> and 900 A<sub>rms</sub>, as well as 450 A<sub>rms</sub> and 500 A<sub>rms</sub>. SiC versions are available with R<sub>DS(on)</sub> values of 1.4 m&ohm; and 1.0 m&ohm;, as well as 1.8 m&ohm; and 1.3 m&ohm;. In addition, StarPower expands its portfolio of encapsulated three-phase bridge modules for traction inverters in the low- and medium-power range. These modules use SiC MOSFETs, offering losses starting from 2 m&ohm; R<sub>DS(on)</sub>. The combination of Si<sub>3</sub>N<sub>4</sub> AMB substrates and a pin-fin baseplate enhance thermal robustness; an integrated current sensor is optionally available. The modules are offered in 750 V and 1200 V versions, including Gen3 IGBT variants rated at 350 A<sub>rms</sub>, 380 A<sub>rms</sub>, and 300 A<sub>rms</sub>. SiC versions are available with R<sub>DS(on)</sub> values of 2.3 m&ohm; and 2.0 m&ohm;, as well as 3.0 m&ohm; and 2.0 m&ohm;.	08.04.2026 15:30:00	Apr	news_2026-05-01_16.jpg	\images\news_2026-05-01_16.jpg	https://www.starpowereurope.com/en	starpowereurope.com
Senior Vice President and GM appointed	OmniOn Power (OmniOn) has appointed Brian Korn as ...	13806	People	Senior Vice President and GM appointed	OmniOn Power (OmniOn) has appointed Brian Korn as the new Senior Vice President and General Manager of its Core Products business. Korn brings more than 20 years of experience in power products spanning board mounted, front end, and specialized power solutions for data center, telecom, and network infrastructure applications. At OmniOn Power, Korn will be responsible for defining the strategic direction, driving the operational execution, and overseeing the long-term performance of the company’s Core Products business. Korn joins OmniOn from Advanced Energy, where he held senior leadership roles overseeing embedded and front end power products for key growth industries. Earlier in his career, he led product and business teams at Cisco Systems, Equinix, Sun Microsystems, and Silicon Graphics.	08.04.2026 09:00:00	Apr	news_2026-05-01_4.jpg	\images\news_2026-05-01_4.jpg	https://www.omnionpower.com/about/news/press-releases/omnion-power-announces-new-svp-and-gm-of-core-products-business-brian-korn	omnionpower.com
Strategic Agreement for Critical Metals Recovery	Indium Corporation® has executed a long-term o...	13786	Industry News	Strategic Agreement for Critical Metals Recovery	Indium Corporation® has executed a long-term offtake framework agreement with Flash Metals USA Inc., a wholly owned subsidiary of Metallium Limited (MTM), for the supply of critical metals recovered using Metallium’s Flash Joule Heating technology. Under the agreement, Indium will purchase metals recovered from secondary raw materials and electronic scrap through Flash Metals USA’s recycling operations, including gallium, germanium, copper, tin, gold, and indium. The agreement, with an initial term of 10 years with automatic five-year renewal options, establishes a robust and diversified supply chain for U.S.-based recovery of strategic metals. Indium Corporation operates its own metals and compounds reclaim and recycle program that provides specialized recycling services for the electronics, semiconductor, display, battery, and other specialty material industries.	03.04.2026 07:00:00	Apr	news_2026-04-15_2.jpg	\images\news_2026-04-15_2.jpg	https://www.indium.com/press-releases/indium-corporation-announces-strategic-agreement-for-domestic-critical-metals-recovery/	indium.com
100 V Integrated GaN Power Stages	Efficient Power Conversion (EPC) has introduced it...	13800	Product Release	100 V Integrated GaN Power Stages	Efficient Power Conversion (EPC) has introduced its next generation of 100 V integrated GaN power-stage ICs – EPC23108, EPC23109, EPC23110 and EPC23111 – targeting high-performance motion and power systems such as humanoid robots, drones, and other compact battery-powered platforms. The devices are designed to simplify implementation and improve operational robustness in real-world environments while preserving the efficiency and power-density advantages typical of integrated GaN technology. Each IC integrates the high-side and low-side eGaN® FETs together with the gate driver and level shifting circuitry in a thermally enhanced QFN package. They support operation up to 100 V, with load current capability of 35 A (EPC23108, EPC23109) and 20 A (EPC23110, EPC23111), enabling reliable high-frequency switching performance. The control interface has an active-low fast-shutdown and standby input with a built-in 65 kΩ pull-up, which makes it work with industrial logic standards. As a result, designers can connect the devices directly to standard controllers without having to do any extra signal conditioning. This makes the design easier and makes sure that the devices work the same way on all platforms. Operational safety is improved through deterministic shutdown behavior. When standby is asserted, PWM switching stops immediately and the driver enters a low-quiescent-current state from the VDRV supply. If the driver supply is lost, an active gate pull-down ensures both the high-side and low-side FETs remain off, maintaining system control during fault conditions and enhancing reliability. The family also supports continuous 100% duty-cycle operation, which is necessary for full-torque and uninterrupted conduction modes.	02.04.2026 13:30:00	Apr	news_2026-04-15_16.jpg	\images\news_2026-04-15_16.jpg	https://epc-co.com/epc/about-epc/events-and-news/news/artmid/1627/articleid/3283/epc-expands-the-offering-of-100-v-integrated-gan-power-stages-optimized-for-motor-drives-with-improved-control-and-protection	epc-co.com
Measurement Day Nuremberg	Experience an exclusive day dedicated to power and...	13791	Event News	Measurement Day Nuremberg	Experience an exclusive day dedicated to power and high-end measurement technology on April 22, 2026, in Nuremberg at the Max Morlock Stadium. The event features practice-oriented technical presentations, direct exchange with experts, and a tabletop exhibition.	02.04.2026 12:00:00	Apr	news_2026-04-15_7.JPG	\images\news_2026-04-15_7.JPG	https://www.datatec.eu/de/en/m-day-nuremberg-2026?shopSwitchInitiated=1	datatec.eu
Prototyping Controller for Wide-Bandgap Power Converters	Imperix introduced the B-Box 4, a Rapid Control Pr...	13794	Product Release	Prototyping Controller for Wide-Bandgap Power Converters	Imperix introduced the B-Box 4, a Rapid Control Prototyping (RCP) system for power electronics. Featuring a proprietary architecture optimized for low-latency operation, the controller delivers advanced control loop speeds and signal fidelity. The device aims to accelerate experimental prototyping activities in both industrial and academic research environments. The B-Box 4 enables 20 MSamples/s synchronous sampling at all analog inputs simultaneously. This captures the full high-frequency content of current ripple or medium-frequency waveforms, and it permits the direct visualization of waveforms without extra instrumentation. Using oversampling, the B-Box 4 is not only a control system but also a monitoring and debugging tool, usable directly from the readily available measurements. It provides a PWM resolution of 250 ps, which is useful for ultra-fast switching applications, especially for techniques relying on phase shift control such as within medium-frequency converters. B-Box 4 can execute the control loop of simple systems in under 2 μs, directly from the CPU. The device is fully integrated into an ecosystem of products designed to accelerate prototyping in power electronics.	02.04.2026 07:30:00	Apr	news_2026-04-15_10.jpg	\images\news_2026-04-15_10.jpg	https://imperix.com/imperix-news/the-next-generation-of-power-electronics-hardware-is-here/	imperix.com
High-Voltage Safety Testing Platform	Vitrek launched the V10X electrical safety hipot t...	13817	Product Release	High-Voltage Safety Testing Platform	Vitrek launched the V10X electrical safety hipot tester. Designed for automated, connected production environments, the V10X delivers up to 30 kV AC output, and a 100 pA leakage resolution. It provides a single-platform solution for safety testing of appliances, EV components, cable assemblies, power distribution systems, lighting products, and medical electrical equipment. It is designed for connected production environments where safety testing must generate traceable data, integrate with factory networks, and scale with evolving standards. A graphical touchscreen enables test creation, real-time charting, and built-in PDF and CSV report generation, and barcode support is already integrated. Built-in networking, SCPI-compliant automation interfaces, and control of up to 1,600 switch matrix channels make the system ready for Industry 4.0 production lines. The V10X meets multiple global compliance standards, and is backed by ISO 17025-accredited calibration services.	01.04.2026 14:30:00	Apr	news_2026-05-01_15.jpg	\images\news_2026-05-01_15.jpg	https://vitrek.com/press-release-vitrek-introduces-v10x-a-future-ready-high-voltage-safety-testing-platform/	vitrek.com

Bodo's News

Vertically Stacked Packaging Technology in a Half-Bridge Configuration

Standard-Level 40 V MOSFETs for Motor Control Circuits

Hjalti Pall Thorvardarson Appointed Chief Operating Officer

Joint Efforts on Advancing Medium-Frequency Transformers for Solid-State Transformers

Safety Power Management IC for Electromechanical Braking

Fab for Power Semiconductors and Analog/Mixed-Signal Technologies Opened

Vincenzo Salmeri appointed President

Patent for DC Power Junction System Technology

Center for Microsystems Technology

Award recognises strong Collaboration, Customer Support and Continued Growth

500 W Microinverter Reference Platform

Certified R&D and Business Center in Drammen, Norway

Probes for High-Current Waveform Measurement

Nanocrystalline EMI Shielding Sheets

Event on Test & Measurement for Aerospace Applications

Manufacturer of Transformer Insulation Kits and Components Acquired

PFC Controller targets Battery Chargers, Power Adapters, and Power Supplies

High-Isolation Gate Drive Converters

Top-Side Cooling Package for SiC MOSFETs

Focus on E-mobility, AI Data Centers, Renewable Energy and Smart Energy at PCIM Asia Shenzhen 2026

Institution in the Field of Electromagnetic Compatibility Research

Power MOSFETs in wettable Flank Package

1200 V SiC MOSFETs in Top-Side cooled SMD Package

Strategic Collaboration on SiC Power Modules for Automotive Applications

Reference Design for compact GaN-based 3-Phase BLDC Motor Drive Inverters

Power Company and Processor Provider join Forces

Precise Fluxgate AC/DC Current Transducer

Low-Voltage Motor Driver Portfolio for Industrial and Smart Appliance Applications

Protection Solution for Data Centers, Renewable Energy and Charging Stations

Magnetics Design Platform now allows Planar Transformers plus Thermal Modelling

Isolated Through-Hole Package for SiC MOSFETs for Direct-Cooled Thermal Management

Silicon Carbide Technology is the Core Element in Semiconductor Circuit Breakers

Jointly Developed Package for Power Semiconductor Modules

Collaboration on high-voltage SiC Technology for Railway Systems

800 VDC Converters for Next-Generation AI Data Centers

Teaming up to establish U.S. Gallium Supply Chain

SMD Fuse for High-Current 48 VDC AI Data Center Protection

Complementary 30 V Dual MOSFET

How 800V EV Innovations are Redefining AI Data Centers

High Current Chip Ferrite Beads for EMI Suppression in High Density Power

800 V-to-12.5 V Power Conversion for AI Infrastructure built on NVIDIA MGX™

Slim Auxiliary PSU Reference Designs for NVIDIA Kyber 800 VDC AI Data Center

AI-based Magnetics and Power Design Tools in Asia

Semiconductor Manufacturer joins MGX AI Factory Ecosystem for AI Server Racks

Silicon Carbide Power Module operating at 205 °C

Simulator for Rapid Power Electronics Circuit Verification

Partnership on Power MOSFET Manufacturing in the US

Power Meter with up to 4 Channels

3.3 kV Power Modules to Enable Solid-State Transformers for AI Data Centers

Announcing 3D-PEIM 2026 Tutorial and Panel Session

APEC 2027: Call for Technical Sessions Digest Submissions

Isolators for Galvanic Isolation of Digital Signals

EU flagship Project Moore4Power to drive the next Generation of sustainable Power Electronics

Liquid-Cooled 3-Phase AC/DC Converters for High-Power Industrial Applications

Gate Driver ICs for three-phase brushless Motors

Scalable Power Supply Solutions for Automotive SoCs

Acquisition of Power Semiconductor Company

SMT Current Sense Transformers

Total Power Solution for Panther Lake and Wildcat Lake Platforms

Distribution Agreement for GaN Devices

Swiss Company acquires Chinese Developer of high-voltage Circuit Protection Solutions

Copper Nano-Paste for pressureless Die Attach in Power Semiconductors

Non-isolated Buck-Boost DC/DC Converters with up to 99 % Efficiency

80 V N-channel MOSFET support 48 V Automotive Systems

All Battery New Energy Vessel in China

High-Power Modules for High-Voltage Energy Systems

Copper Conductors for High-Power Transformers and Motors

Fast Charging Company gets Funding and expands into India

SMT Flat-Wire Inductor for Automotive Electronics

European Project develops next Generation of On-Board Chargers

Film Capacitors for High-Frequency Power Electronics

Protection for AI Servers and High-End GPUs

Broadband Amplifier now for Power Classes up to 1000 W

AC/DC Wall-Mount Adapters for Medical and other Applications

TVS Diodes for Automotive Power Protection

Wireless Power Chipset for Wearables

Strategic Collaboration for 900 V EV Platforms

Discrete Power Solutions

Production Start for third Generation of SiC Devices

800 V_DC Converters for Next-Generation AI Data Centers

SMD Fuse for High-Current 48 V_DC AI Data Center Protection

Slim Auxiliary PSU Reference Designs for NVIDIA Kyber 800 V_DC AI Data Center