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| 600 W Open Frame Power Supply for Medical and Industrial Applications | Murata Manufacturing has introduced the PQC600 ope... | 12195 | Product Release | 600 W Open Frame Power Supply for Medical and Industrial Applications | Murata Manufacturing has introduced the PQC600 open-frame AC to DC power supply, which caters to the needs of the latest medical and industrial applications, such as hospital beds, dentist chairs, medical equipment, and industrial process machinery. It offers 600 W of power within a package that is less than 1U in height and is certified to the IEC 60601-1 Edition 3 medical safety standard, which includes 2 Means of Patient Protection (MOPP) from primary to secondary, 1 MOPP from the chassis to ground and 1 MOPP from output to chassis. Additionally, the PQC600 complies with the IEC 60601-1-2 4th Edition for EMC standards, ensuring robust electromagnetic compatibility, and is suitable for use with medical devices that have Type B or Type BF applied parts. With a 600W forced-air cooling design, it achieves an efficiency of 95 % at full load. The power supply features an interleaved Power Factor Correction (PFC) and back-end synchronous rectification. Furthermore, the power supply includes a droop current sharing feature, enabling multiple units to be configured in parallel for greater power scalability. | 21.11.2024 08:30:00 | Nov | news_2024-12-01_10.jpg | \images\news_2024-12-01_10.jpg | https://www.murata.com/en-eu/news/power/ac-dc-converters/2024/1121 | murata.com |
| Chief Operating Officer started in Office | Effective November 1, 2024, Markus Fischer, the fo... | 12187 | People | Chief Operating Officer started in Office | Effective November 1, 2024, Markus Fischer, the former Executive Vice President Operations, has been appointed to the Rohde & Schwarz Executive Board. As Chief Operating Officer (COO), he will collaborate with Christian Leicher (CEO) and Andreas Pauly (CTO) to continue to keep the company on course for growth in these challenging times. As Chief Operating Officer, Markus Fischer will be responsible for most of the operative business of Rohde & Schwarz. Andreas Pauly, who joined the Executive Board as Chief Technology Officer in October 2023, will retain his primary responsibility for innovation, research and development. Managing Partner Christian Leicher will continue to head the Executive Board as President and CEO. Markus Fischer (44) joined the technology group in 2011 as Head of Corporate Material Sourcing at Munich headquarters. After another management role at Rohde & Schwarz Messgerätebau GmbH in Memmingen, he assumed overall responsibility for the group's supply chain in 2017. In July 2020, he was appointed Executive Vice President Operations, becoming a member of Corporate Management. In that role, Fischer was responsible for all Rohde & Schwarz production activities as well as the supply chain and procurement. The technology group's five production plants have a high degree of vertical integration. As Executive Vice President Operations, Fischer focused above all on improving such key aspects as efficiency, flexibility and scalability. Consequently, his division not only ensured delivery capability in times of uncertain supply chains, but also contributed substantially to the stability of Rohde & Schwarz. | 21.11.2024 07:00:00 | Nov | news_2024-12-01_2.jpg | \images\news_2024-12-01_2.jpg | https://www.rohde-schwarz.com/uk/about/news-press/all-news/new-chief-operating-officer-at-rohde-schwarz-press-release-detailpage_229356-1531917.html | rohde-schwarz.com |
| Programmable Mixed-Signal ICs, Including Low-Power Device with 14-Bit SAR ADC | Renesas announced AnalogPAK ICs, including lower p... | 12200 | Product Release | Programmable Mixed-Signal ICs, Including Low-Power Device with 14-Bit SAR ADC | Renesas announced AnalogPAK ICs, including lower power and automotive-qualified devices along with the industry’s first programmable 14-bit SAR ADC (Successive-Approximation Register Analog-Digital Converter). AnalogPAK devices are part of Renesas’ GreenPAK Family of Programmable Mixed-Signal Matrix products: NVM programmable devices integrating many system functions while minimizing component count, board space, and power consumption. GreenPAK and AnalogPAK ICs deliver functional replacement of mixed-signal standard products and stand-alone discrete circuits. They also provide hardware supervisory functions for SoCs and microcontrollers. GreenPAK and AnalogPAK devices are suited for consumer electronics, computing, white goods, industrial, communications, and automotive. Using Go Configure Software Hub and the GreenPAK Development Kit, designers can create and program a custom circuit in minutes. For example, the SLG47011 AnalogPAK device includes several D/A features including programable multichannel 14-bit SAR ADC with Programmable Gain Amplifier (PGA). The SLG47011 also has user-defined power saving modes for all macrocells that enable designers to switch off some blocks in sleep mode and therefore reduce power consumption to the µA level. The SLG47011 can be used to extend the performance of, or to offload an MCUs. It can also be used in conjunction with an MCU to replace a complex analog front-end (AFE). Key functions supported by the SLG47011 include measurement, data processing, logic control and data output. | 20.11.2024 13:30:00 | Nov | news_2024-12-01_15.jpg | \images\news_2024-12-01_15.jpg | https://www.renesas.com/en/about/newsroom/renesas-introduces-industry-s-first-complete-memory-interface-chipset-solutions-second-generation | renesas.com |
| Tool-in Ceremony for Semiconductor Fab | Samsung Electronics held a tool-in ceremony for it... | 12192 | Industry News | Tool-in Ceremony for Semiconductor Fab | Samsung Electronics held a tool-in ceremony for its semiconductor research and development complex (NRD-K) at its Giheung campus. About 100 guests, including those from suppliers and customers, were in attendance to celebrate the milestone. NRD-K broke ground in 2022 and is set to become a key research base for Samsung’s memory, system LSI and foundry semiconductor R&D. With its infrastructure, research and product-level verification will be able to take place under one roof. Samsung plans to invest about KRW 20 trillion (more than US-$ 14 billion) by 2030 for the complex in an area covering about 109,000 square meters within its Giheung campus. The complex will also include an R&D-dedicated line scheduled to begin operation in mid-2025. NRD-K will be set up with High NA extreme ultra-violet (EUV) lithography and new material deposition equipment aimed at accelerating the development of next-generation memory semiconductors such as 3D DRAM and V-NAND with more than 1,000 layers. In addition, wafer bonding infrastructure with innovative wafer-to-wafer bonding capabilities is also planned to dock. | 18.11.2024 12:00:00 | Nov | news_2024-12-01_7.jpg | \images\news_2024-12-01_7.jpg | https://news.samsung.com/global/samsung-reaches-key-milestone-at-new-semiconductor-rd-complex | samsung.com |
| A very short Look back at electronica 2024 | From November 12 to 15,2024 a total of 3,480 exhib... | 12191 | Event News | A very short Look back at electronica 2024 | From November 12 to 15,2024 a total of 3,480 exhibitors presented their innovations across the entire spectrum of electronics to about 80,000 visitors at the electronica trade fair in Munich, Germany. In addition to sustainability, key topics such as artificial intelligence, the future of mobility, and the development of young talent sparked discussions at the exhibition stands and at the supporting program. The equally successful SEMICON Europa took place concurrently in two of the 18 halls. The organizer, Messe München, is “delighted that the trade fair was once again held at the same high level as before the pandemic and that the atmosphere was very positive despite the challenging times”. In order to attend electronica show, which had its debut exactly 60 years before, 3,480 exhibitors traveled from 59 countries and regions, with 76 percent of them from abroad. There were around 80,000 visitors from around 100 countries and regions. The share of international visitors totaled 54 percent. After Germany, the top 10 visitor countries were: Italy, China, France, Austria, United Kingdom, Switzerland, USA, Spain, Netherlands and Poland.<br>Some trivia: Roland R. Ackermann, the Correspondent Editor Bavaria of Bodo’s Power Systems, had already visited the very first electronica show 60 years ago while he was delighted to greet so many friends and business friends at this year’s electronica show as well. The next electronica will take place from November 10 to 13, 2026. | 15.11.2024 11:00:00 | Nov | news_2024-12-01_6.jpg | \images\news_2024-12-01_6.jpg | https://electronica.de/en/trade-fair/journalists/press-releases/detail/final-report-electronica-2024.html | electronica.de |
| GaN Design and Development Center in Ottawa, Canada | The French company Wise-integration, which is acti... | 12190 | Industry News | GaN Design and Development Center in Ottawa, Canada | The French company Wise-integration, which is active in digital control of gallium nitride (GaN) and GaN ICs for power conversion, has opened its North American Design & Development Center in Ottawa, Ontario, Canada. Led by Christian Cojocaru and staffed by experts in analog and digital technology design, the center will drive the development of the company’s design portfolio for the next generations of WiseGan®. By maximizing the high-frequency capabilities of GaN without added power losses, the next generations of the two product lines are said to “enable significant reductions in system size and cost, while boosting overall conversion efficiency”. Since its launch in 2020, the fabless company has established more than 20 patent families for its two core product lines. WiseGan includes GaN power integrated circuits designed for high-frequency operation in the MHz range, integrating features that streamline implementation with digital control. WiseWare is a 32-bit, MCU-based AC/DC digital controller optimized for GaN-based power-supply architectures. The company recently announced the launch of a subsidiary in Hong Kong. | 15.11.2024 10:00:00 | Nov | news_2024-12-01_5.jpg | \images\news_2024-12-01_5.jpg | https://wise-integration.com/wise-integration-expands-in-north-america-with-ottawa-design-center-to-develop-next-gen-wisegan-digital-solutions/ | wise-integration.com |
| Collaboration to Advance Plug & Charge | Vector and Hubject now collaborate to further adva... | 12189 | Industry News | Collaboration to Advance Plug & Charge | Vector and Hubject now collaborate to further advance the Plug & Charge (PnC) technology. The aim is to simplify the electric vehicle (EV) charging process. With more than 2.6 million PnC-ready vehicles already on the market and more EVs on the horizon, the partnership helps to accelerate the adoption and implementation of PnC technology. Through this collaboration, automotive OEMs and charging station manufacturers can now obtain the Hubject QA (Pre-Production) and Production Certificates via the Vector Security Manager with the latest release of the development and test tool CANoe Version 18 SP3. The Vector Security Manager is the link between the Vector tools and the OEM-specific security implementations. With it, security functions can be used uniformly in the tools. Hubject QA and Production Certificates are essential for testing EVs and Electric Vehicle Supply Equipment (EVSE) using the CANoe Test Package EV or CANoe Test Package EVSE from Vector. This integration ensures that both the vehicles and the charging stations meet the ISO 15118 standard of interoperability, conformity and market readiness. PnC offers a seamless user experience. It eliminates the need for physical cards or mobile apps to authenticate and initiate charging. | 13.11.2024 09:00:00 | Nov | news_2024-12-01_4.jpg | \images\news_2024-12-01_4.jpg | https://www.vector.com/at/de/news/news/vector-and-hubject-collaborate-to-advance-plug-charge/ | vector.com |
| Cooperation for Development of Sensor ICs with Functional Safety | Novosense Microelectronics and Continental Automot... | 12186 | Industry News | Cooperation for Development of Sensor ICs with Functional Safety | Novosense Microelectronics and Continental Automotive Technologies have signed a memorandum to enhance strategic cooperation in the development of sensor ICs with functional safety, as well as for the global integration of Novosense’s products within Continental’s worldwide platforms. Products being co-developed include those for safety functions and system reliability – from airbag triggers to battery pack monitors. Novosense is a member of the AEC and an active developer for the global automotive industry. It has implemented an extensive R&D program for the sector that leverages a system-level understanding of automotive electronics, as well as a reliable product delivery supply chain. | 13.11.2024 06:00:00 | Nov | news_2024-12-01_1.jpg | \images\news_2024-12-01_1.jpg | https://www.novosns.com/en/company-news-318 | novosns.com |
| Automotive grade residual Current Monitoring Sensor | LEM has designed an automotive grade residual curr... | 12199 | Product Release | Automotive grade residual Current Monitoring Sensor | LEM has designed an automotive grade residual current monitoring (RCM) type B sensor for bi-directional OBCs with ASIL B capabilities according to ISO26262 for transformer-less on-board chargers (OBCs). This sensor, called CDT, complies with all the relevant safety standards. The RCM type B sensor enables designers to react to the new ISO5474 Part 2 standard for AC power transfer. The standard focuses on electrically propelled road vehicles and outlines the functional and safety requirements for power transfer between the vehicle and an external electric circuit using AC. Part of a series that operates in conjunction with ISO5474 Part 1, the new standard covers conductive charging requirements for modes 2 and 3 according to IEC 61851-1, reverse power transfer through on-board standard socket-outlets or EV plugs, and voltages up to 1000V AC. The CDT detects differences in current between two points, identifying such faults as short circuits and enabling rapid isolation of faulty sections to prevent damage. LEM’s CDT sensor is suited for RCM type B for bi-directional OBCs, where residual currents are detected and monitored, including AC and DC leakage currents. Using LEM’s patented fluxgate technology the CDT sensor offers a level of accuracy of ± 0.5 mA @ 5 mA. The device also provides functions on the secured Serial Peripheral Interface (SPI) bus including dynamic fault selection, monitoring of T°C, leakage value and supply monitoring, but it also provides diagnostic functions, and it is able to work equally effectively with single-phase and 3-phase AC. | 12.11.2024 12:30:00 | Nov | news_2024-12-01_14.jpg | \images\news_2024-12-01_14.jpg | https://www.lem.com/en/lem-launches-first-automotive-grade-residual-rcm-b-sensor | lem.com |
| SiC Schottky Barrier Diodes for High-Voltage xEV Systems | ROHM Semiconductor announced surface mount SiC Sch... | 12198 | Product Release | SiC Schottky Barrier Diodes for High-Voltage xEV Systems | ROHM Semiconductor announced surface mount SiC Schottky barrier diodes (SBDs) that improve insulation resistance by increasing the creepage distance between terminals. The initial lineup includes eight models (SCS2xxxNHR; AEC-Q101 qualified) for automotive applications such as onboard chargers (OBCs), which will soon be supplemented by eight additional models (SCS2xxxN) for industrial equipment such as FA devices and PV inverters. Adopting a specific package shape, it achieves a minimum creepage distance of 5.1 mm. These products utilize an original design that removes the center pin previously located at the bottom of the package, extending the creepage distance to a minimum of 5.1 mm, approximately 1.3 times greater than standard products. This minimizes the possibility of tracking (creepage discharge) between terminals, eliminating the need for insulation treatment through resin potting when surface mounting the device on circuit boards in high-voltage applications. Additionally, the devices can be mounted on the same land pattern as standard and conventional TO-263 package products, allowing the replacement on existing circuit boards. Two voltage ratings are offered – 650 V and 1200 V – supporting 400 V systems commonly used in xEVs, as well as higher voltage systems expected to gain wider adoption in the future. | 12.11.2024 11:30:00 | Nov | news_2024-12-01_13.jpg | \images\news_2024-12-01_13.jpg | https://www.rohm.com/news-detail?news-title=2024-11-12_news_sbd&defaultGroupId=false | rohm.com |
| 120 V/4 A Half-Bridge Gate Driver for Automotive Applications | Nexperia introduced a series of high-performance g... | 12196 | Product Release | 120 V/4 A Half-Bridge Gate Driver for Automotive Applications | Nexperia introduced a series of high-performance gate driver ICs designed for driving both high-side and low-side N-channel MOSFETs in a synchronous buck or half-bridge configuration. The automotive-qualified NGD4300-Q100 is suited for electronic power steering and power converters, while the NGD4300 has been designed for use with DC/DC converters in consumer devices, servers and telecommunications equipment as well as for micro-inverters used in various industrial applications. The floating high-side driver in these ICs can operate from bus voltages up to 120 V and use a bootstrap supply with an integrated diode – features which simplify overall system design and help to reduce PCB size. They can deliver up to 4 A (peak) source and 5 A of sink current to enable short rise and fall times even for heavy loads. The gate driver has a 13 ns delay and offers a channel-to-channel delay matching of 1 ns. These delays help to minimize dead-time by maximizing switching duty-cycle. 4 ns rise and 3.5 ns (typical) fall times help to deliver higher efficiency and support high frequency and fast system control. These gate drivers accept input control signals complying with both TTL and CMOS logic levels. These ICs are fabricated using a silicon-on-insulator (SOI) process. This allows the negative voltage tolerance of the HS pin to extend to -5 V, significantly reducing the risk of damage caused by system parasitic component and unexpected spikes. The NGD4300 and NGD4300-Q100 are available in a choice of DFN-8, SO-8 and HSO-8 packages to offer engineers the flexibility to trade-off between device size and thermal performance, depending on application requirements. | 12.11.2024 09:30:00 | Nov | news_2024-12-01_11.jpg | \images\news_2024-12-01_11.jpg | https://www.nexperia.com/about/news-events/press-releases/Nexperia-s-new-120-V-4-A-half-bridge-gate-driver-raises-robustness-and-efficiency-in-automotive-applications | nexperia.com |
| Semiconductor Product Distribution Center opened in Germany | Texas Instruments has opened its product distribut... | 12188 | Industry News | Semiconductor Product Distribution Center opened in Germany | Texas Instruments has opened its product distribution center in Dreieich, Germany, close to Frankfurt, Germany. This distribution center includes 9,000 square meters of space and specific automation features. It has the capacity to quickly ship up to 7,500 orders per day. Located near Frankfurt Airport, the distribution center enables faster product delivery in Europe. The pick, pack and ship process is fully automated and orders are ready to ship within 15 minutes or less. Customers in central Germany can expect same-day product delivery, while next-day delivery is available to customers in most European countries. TI has been operating in Europe since 1956. | 12.11.2024 08:00:00 | Nov | news_2024-12-01_3.jpg | \images\news_2024-12-01_3.jpg | https://www.ti.com/about-ti/newsroom/news-releases/2024/2024-11-12-texas-instruments-accelerates-delivery-to-european-customers-with-opening-of-new-product-distribution-center-near-frankfurt--germany.html | ti.com |
| 800 V GaN Inverter with 30 kW/l Power Density | Cambridge GaN Devices (CGD) and IFP Energies nouve... | 12194 | Product Release | 800 V GaN Inverter with 30 kW/l Power Density | Cambridge GaN Devices (CGD) and IFP Energies nouvelles (IFPEN), a French public research and training organization in the fields of energy, transport and the environment, have developed a demo which confirms the suitability of CGD’s ICeGaN®650 V GaN ICs in a multi-level, 800 V<sub>DC</sub> inverter. The demo delivers a power density of 30 kW/l, which is greater than can be achieved by more expensive, state-of-the-art SiC-based devices. The inverter realization also demonstrates the ease of paralleling that ICeGaN technology enables; each inverter node has three 25 mΩ / 650 V ICeGaN ICs – 36 devices in total – in parallel. This multi-level GaN Inverters can power electric motors to over 100 kW peak, 75 kW continuous power. The CGD/IFPEN demo features: a high voltage input of up to 800 V<sub>DC</sub>, 3-phase output, a peak current of 125 A<sub>RMS</sub> for 10 s or 180 A<sub>Peak</sub> and a continuous current of 85 A<sub>RMS</sub> continuous (120 A<sub>Peak</sub>). The improvement in the efficiency of the traction inverter leads to an increase in battery range and a reduction in charging cycles. As GaN transistors can operate at much higher frequencies than silicon transistors, the iron losses in the motor, particularly in the case of machines with low inductances are reduced. The 3-level topology reduces EMI and enhances the reliability of the system. In terms of thermal management insulated metallized substrate boards featuring an aluminium core facilitate thermal dissipation for adequate operating temperatures, and this extends the lifespan of the system and associated GaN devices. The modular design facilitates scalability and adaptability for varying system requirements. | 12.11.2024 07:30:00 | Nov | news_2024-12-01_9.jpg | \images\news_2024-12-01_9.jpg | https://www.camgandevices.com/en/p/cgd-demos-800-vdc-multi-level-inverter-developed-using-gan-with-ifpen-that-outperforms-sic/ | camgandevices.com |
| IGBTs in several different Packages for up to 1700 V | Microchip Technology now offers its IGBT 7 devices... | 12193 | Product Release | IGBTs in several different Packages for up to 1700 V | Microchip Technology now offers its IGBT 7 devices in different packages, multiple topologies, as well as current and voltage ranges. The components are available in standard D3 and D4 62 mm packages, as well as SP6C, SP1F and SP6LI packages; they are intended for power applications in solar inverters, hydrogen ecosystems, commercial and agricultural vehicles and More Electric Aircraft (MEA). Many configurations are available in the following topologies: three-level Neutral-Point Clamped (NPC), three-phase bridge, boost chopper, buck chopper, dual-common source, full-bridge, phase leg, single switch and T-type. Devices can be provided with voltages ranging from 1200 V to 1700 V while currents range from 50 A to 900 A. Claimed to operate with a “lower on-state IGBT voltage (V<sub>ce</sub>), improved antiparallel diode (lower V<sub>f</sub>) and increased current capability” these components can enable lower power losses. | 12.11.2024 06:30:00 | Nov | news_2024-12-01_8.jpg | \images\news_2024-12-01_8.jpg | https://www.microchip.com/en-us/about/news-releases/products/introducing-a-wide-portfolio-of-igbt-7-power-devices-optimized | microchip.com |
| 1200 V SiC MOSFETs in Bare Die Format | Toshiba has developed the X5M007E120, a 1200 V SiC... | 12201 | Product Release | 1200 V SiC MOSFETs in Bare Die Format | Toshiba has developed the X5M007E120, a 1200 V SiC MOSFETs with an low on-resistance of 7.2 mΩ, which is particularly suited to applications within automotive traction inverters. The device has a V<sub>DSS</sub> of 1200 V and is rated for a drain current (I<sub>D</sub>) of 229 A continuously, with 458 A for pulsed operation (I<sub>D Pulse</sub>). These AEC-Q100 qualified devices can operate with channel temperatures (T<sub>ch</sub>) up to 175 °C. Engineering samples are expected to ship during 2025, with mass production samples scheduled to start in 2026. | 12.11.2024 00:00:00 | Nov | news_2024-12-01_16.jpg | \images\news_2024-12-01_16.jpg | https://toshiba.semicon-storage.com/eu/company/news/2024/11/sic-power-devices-20241112-1.html | toshiba.semicon-storage.com |
| Analog and Mixed-Signal Platform | onsemi introduced the Treo Platform, an analog and... | 12185 | Product Release | Analog and Mixed-Signal Platform | onsemi introduced the Treo Platform, an analog and mixed-signal platform built with Bipolar-CMOS-DMOS (BCD) process technology on an 65 nm node. This platform provides the foundation for a range of power and sensing solutions from the manufacturer including high-performance and low-power sensing, high-efficiency power management, and purpose-built communications devices. Using this single, scalable solution, users can accelerate product development for existing applications, and respond to emerging market opportunities. The Treo Platform features a modular, SoC-like architecture with a set of ever-evolving IP building blocks that make up the compute, power management, sensing, and communications subsystems. It offers digital processing capabilities and "better analog IP performance". With these capabilities, the platform can deliver local intelligence and compute for flexible configuration, as well as improve performance and accuracy in end applications. Additionally, the platform supports "the industry's widest voltage range of 1-90 V and operating temperatures up to 175 ° C", which allows engineers to integrate a range of low-to-high power functionality. Initial product families built on the Treo Platform are sampling now, including voltage translators, ultra-low-power AFEs, LDOs, ultrasonic sensors, multi-phase controllers, and single-pair Ethernet controllers. Through 2025, the semiconductor manufacturer will deliver new family members including: high performance sensors, DC/DC converters, automotive LED drivers, electrical safety ICs, connectivity, and more. | 11.11.2024 15:30:00 | Nov | news_2024-11-15_20.jpg | \images\news_2024-11-15_20.jpg | https://www.onsemi.com/company/news-media/press-announcements/en/onsemi-introduces-the-industry-s-most-advanced-analog-and-mixed-signal-platform | onsemi.com |
| Motor Suite for simplified Motor Control Development | Infineon Technologies launched its Motor Suite dub... | 12197 | Product Release | Motor Suite for simplified Motor Control Development | Infineon Technologies launched its Motor Suite dubbed ModusToolbox™, which is a solution of software, tools and resources for developing, configuring and monitoring motor control applications. With its ability to support different motor types, the solution intends to enable developers to bring high-performance motor control applications to market quickly and efficiently. The suite supports industrial, robotics, and consumer applications such as home appliances, HVAC, drones, and light electric vehicles. The suite streamlines development and testing, providing real-time parameter monitoring for relevant insights into motor performance, efficiency, and reliability. This enables engineers to identify issues, optimize designs, and enhance overall functionality. It also offers signal analysis, and customized status monitoring. ModusToolbox Motor Suite features automatic detection and recognition of supported boards and kits, real-time visualization and monitoring of motor control related signals. It also provides pre-configured algorithms and real-time monitoring of critical system parameters. Additionally, the solution offers algorithms to increase the control robustness across many motor types and applications. It currently includes out-of-the-box support for Infineon’s XMC7000 microcontrollers and will further expand its capability to include industrial MCUs, with PSOC™ Control integration confirmed for upcoming releases. It provides a graphical user interface for motor control development and an adaptable, hardware-abstracted motor control core library. | 08.11.2024 10:30:00 | Nov | news_2024-12-01_12.jpg | \images\news_2024-12-01_12.jpg | https://www.infineon.com/cms/en/about-infineon/press/market-news/2024/INFCSS202411-022.html | infineon.com |
| PLECS Conference 2025 | Join the next PLECS Conference about Embedded Code... | 12166 | Event News | PLECS Conference 2025 | Join the next PLECS Conference about Embedded Code Generation. The speakers are engineers from industry, research, and academia who will present current applications in this field. Engage with experts and network with over 100 participants in the discussion and networking area. Besides that, take the opportunity to exchange ideas with Plexim developers. The conference language will be English. Note that this is an on-site only event. The participation fee will be 700.00 Euros or Swiss Francs (incl. 8.1% VAT) and can be paid by invoice or credit card. The Plexim staff is excited to welcome you again in Zurich, on March 4 and 5, 2025! | 08.11.2024 06:00:00 | Nov | news_2024-11-15_1.png | \images\news_2024-11-15_1.png | https://www.plexim.com/events/seminars/2325 | plexim.com |
| Galvanically isolated Gate Drivers provide Protection for IGBTs and SiC MOSFETs | STMicroelectronics' STGAP3S family of gate drivers... | 12184 | Product Release | Galvanically isolated Gate Drivers provide Protection for IGBTs and SiC MOSFETs | STMicroelectronics' STGAP3S family of gate drivers for silicon-carbide and IGBT power switches provide a reinforced capacitive galvanic isolation between the gate-driving channel and the low-voltage control and interface circuitry, withstanding 9.6 kV transient isolation voltage (VIOTM) with 200 V/ns common-mode transient immunity (CMTI). Suited for motor drives for industrial applications such as air conditioning, factory automation, and home appliances the drivers are also used in power and energy applications including charging stations, energy storage systems, power-factor correction (PFC), DC/DC converters and solar inverters. The STGAP3S product family includes different options with 10 A and 6 A current capability, each of them available with differentiated Under Voltage Lock-Out (UVLO) and desaturation intervention thresholds. This helps designers select the best device to match the performance of their chosen SiC MOSFET or IGBT power switches. The Desaturation protection implements an overload and short-circuit protection for the external power switch providing the possibility to adjust the turn-off strategy using an external resistor to maximize the protection turn-off speed while avoiding excessive overvoltage spikes. The undervoltage-lockout protection prevents turn-on with insufficient drive voltage. The driver's integrated Miller Clamp architecture provides a pre-driver for an external N-channel MOSFET. The available device variants allow a choice of 10 A sink/source and 6 A sink/source drive-current capability with desaturation-detection and UVLO thresholds optimized for IGBT or SiC technology. The fault conditions of desaturation, UVLO and overtemperature protection are notified with two dedicated open drain diagnostic pins. | 07.11.2024 14:30:00 | Nov | news_2024-11-15_19.jpg | \images\news_2024-11-15_19.jpg | https://newsroom.st.com/media-center/press-item.html/n4656.html | st.com |
| 1200 V IGBTs for Automotive and Industrial Applications | ROHM has developed automotive-grade AEC-Q101 quali... | 12183 | Product Release | 1200 V IGBTs for Automotive and Industrial Applications | ROHM has developed automotive-grade AEC-Q101 qualified 4<sup>th</sup> Generation 1200V IGBTs for vehicle electric compressors and HV heaters as well as industrial inverters. The current lineup includes four models - RGA80TRX2HR / RGA80TRX2EHR / RGA80TSX2HR / RGA80TSX2EHR - in two discrete package types (TO-247-4L and TO-247N), along with 11 bare chip variants - SG84xxWN - with plans to further expand the lineup in the future. In case of a short circuit these devices provide a withstand time of 10 µs (T<sub>j</sub>=25 °C) together with low switching and conduction losses while maintaining a withstand voltage of 1200 V. Its TO-247-4L package features 4 terminals, can accommodate an effective voltage of 1100 V in a 'Pollution Degree 2 environment' by ensuring adequate creepage distance between pins. High-speed switching is achieved by including a Kelvin emitter terminal, resulting in even lower losses. In fact, when comparing the efficiency of the new TO-247-4L packages with conventional and standard products in a 3-phase inverter, loss is reduced by about 24% compared to standard products and by 35% over conventional products. | 07.11.2024 13:30:00 | Nov | news_2024-11-15_18.jpg | \images\news_2024-11-15_18.jpg | https://www.rohm.com/news-detail?news-title=2024-11-07_news_igbt&defaultGroupId=false | rohm.com |
| New Sales Office and Service Center in Sydney, Australia | Magna-Power Electronics has opened Magna-Power Ele... | 12170 | Industry News | New Sales Office and Service Center in Sydney, Australia | Magna-Power Electronics has opened Magna-Power Electronics ANZ in Sydney, Australia. The establishment of the Sydney office enhances Magna-Power's local presence, providing dedicated support for existing and prospective customers in the region. With a product line ranging from 1.25 kW to over 10 MW and more than 400,000 product configurations, the company's solutions are well-suited to meet the varied power requirements of key Australian applications, including electrolyzers, defence, mining, water treatment, industrial power electronics, transportation, among many others. Leading the new office are industry veterans David Champion and Brian Chapman, who bring over 60 years of combined experience in electrical engineering and technology. The investment in the Sydney office is said to underscore the company's commitment to providing regional services to a wider customer base in the growing APAC market. | 07.11.2024 10:00:00 | Nov | news_2024-11-15_5.jpg | \images\news_2024-11-15_5.jpg | https://magna-power.com/company/news/2024-11-07-magna-power-sales-office-and-service-center-in-sydney-australia | magna-power.com |
| 100 V Automotive-Grade Devices for Automotive LiDAR | Innoscience has added two 100 V automotive-grade G... | 12178 | Product Release | 100 V Automotive-Grade Devices for Automotive LiDAR | Innoscience has added two 100 V automotive-grade GaN devices. The company's INN100W135A-Q (R<sub>DS(on),max</sub> = 13.5 mΩ) and smaller package INN100W800A-Q (R<sub>DS(on),max = 80</sub> mΩ) are both certified to AEC-Q101 and optimized for LiDAR as well as for high power density DC/DC converters, and Class D audio applications in the automotive sector. The INN100W135A-Q and the ultra-compact INN100W800A-Q, with a WLCSP package measuring 2.13 mm x 1.63 mm and 0.9 mm x 0.9 mm respectively, offer advantages in terms of size and power efficiency. Both devices are specifically tailored for the requirements of L2+/L3 assisted driving systems, with switching speeds up to 13 times faster and pulse widths reduced to one-fifth of those of silicon solutions. Parameters like Q<sub>g</sub> and Q<sub>oss</sub> are also improved by 1.5 to 3 times over their silicon counterparts. This results in medium to long-range recognition capabilities of 200/300m. | 07.11.2024 08:30:00 | Nov | news_2024-11-15_13.jpg | \images\news_2024-11-15_13.jpg | https://www.innoscience.com/site/details/966?el=mdnav | innoscience.com |
| 60-V Variant of Power MicroModule Series | There's another generation of MagI³C-VDMM pow... | 12182 | Product Release | 60-V Variant of Power MicroModule Series | There's another generation of MagI³C-VDMM power modules from Würth Elektronik: The input voltage range gives the new MicroModule a resistance to voltage transients on the 48 V bus. The adjustable output voltage ranges from 0.85 to 6 V with currents up to 0.3 A. The extended input voltage range of the Variable Step Down MicroModule from 3.5 to 60 V now covers bus voltages from 5 to 48 V, opening up applications from Point of Load (PoL) to direct 48 V bus voltage connection. So the MagI³C-VDMM series is suited as a replacement for linear regulators, for example in the power supply of interfaces, sensors, microcontrollers, microprocessors, DSPs and FPGAs. Operational areas include industrial, testing and measurement technology, medical devices and point-of-load DC/DC applications. Its efficiency of up to 86 percent supports "cool design", allowing its use in a temperature range from -40 to +105 °C. To save energy, the power module can be set to sleep mode using an additional pin, and the quiescent current is up to 3 µA. The integrated sync feature allows multiple Micromodules to synchronize to an external frequency while simultaneously meeting the requirements of EMC standard EN55032/CISPR32 Class B for radiated and conducted interference with verified filter combinations. The selectively controllable "spread spectrum" feature improves the EMC behavior. | 06.11.2024 12:30:00 | Nov | news_2024-11-15_17.jpg | \images\news_2024-11-15_17.jpg | https://www.we-online.com/en/components/products/MAGIC-VDMM | we-online.com |
| Strategic Partnership for Onboard Chargers and more | Nexperia has entered into a strategic partnership ... | 12174 | Industry News | Strategic Partnership for Onboard Chargers and more | Nexperia has entered into a strategic partnership with Kostal, which will enable it to produce wide bandgap devices that more closely match the exacting requirements of automotive applications. Under the terms of this partnership, Nexperia will supply, develop, and manufacture WBG power electronics devices which will be designed-in and validated by Kostal. The collaboration will initially focus on the development of SiC MOSFETs in topside cooled QDPAK packaging for onboard chargers in electric vehicles. "Nexperia has been a trusted supplier of silicon components to KOSTAL for many years and is delighted to enter into this strategic partnership that will now extend to wide bandgap devices", according to Katrin Feurle, Senior Director and Head of SiC Discretes & Modules. "KOSTAL will assist in validating our devices in its charging applications, thereby providing us with the type of invaluable 'real-world' data that will allow us to further enhance their performance". | 05.11.2024 14:00:00 | Nov | news_2024-11-15_9.jpg | \images\news_2024-11-15_9.jpg | https://www.nexperia.com/about/news-events/press-releases/Nexperia-and-KOSTAL-form-a-strategic-partnership-based-on-advancing-automotive-grade-wide-bandgap-devices | nexperia.com |
| Automotive-Grade High-Side Switches for BCMs and ZCUs | Novosense has announced a range of high-side switc... | 12180 | Product Release | Automotive-Grade High-Side Switches for BCMs and ZCUs | Novosense has announced a range of high-side switches for driving traditional resistive, inductive, and halogen lamp loads in automotive body control modules (BCM) as well as large capacitive loads commonly found in the first-level and second-level power distribution within zone control units (ZCU). At time of launch, the NSE34 and NSE35 families includes 26 single-, dual- and quad-channel devices developed for operation across 11 separate load currents intervals (11 A to sub-2 A). These devices have an R<sub>ds(on)</sub> resistance range from 8 mΩ to 140 mΩ and feature diagnostic and protection functions such as over-current protection and over-voltage clamping protection. All devices in the two families are fully compliant with multiple automotive standards, including AEC-Q100, AEC-Q100-006, AEC-Q100-012 Grade A, ISO7637, ISO16570 and CISPR25-2021 Class 5. | 05.11.2024 10:30:00 | Nov | news_2024-11-15_15.jpg | \images\news_2024-11-15_15.jpg | https://www.novosns.com/en/company-news-316 | novosns.com |
| 1700 V GaN Switcher IC replaces 3 SiC Transistors | Power Integrations introduced a new member of its ... | 12181 | Product Release | 1700 V GaN Switcher IC replaces 3 SiC Transistors | Power Integrations introduced a new member of its InnoMux™-2 family of single-stage, independently regulated multi-output offline power supply ICs. According to the company the device features "the industry's first 1700 V gallium nitride switch, fabricated using the company's proprietary PowiGaN™ technology". The 1700 V InnoMux-2 IC supports 1000 VDC nominal input voltage in a flyback configuration and achieves over 90 % efficiency in applications requiring one, two or three supply voltages. Each output is regulated within one percent accuracy, eliminating post regulators. The GaN device replaces SiC transistors in power supply applications such as automotive chargers, solar inverters, three-phase meters and a wide variety of industrial power systems. Radu Barsan, vice president of technology at Power Integrations, said, "Our rapid pace of GaN development has delivered three world-first voltage ratings in a span of less than two years: 900 V, 1250 V and now 1700 V. Our new InnoMux-2 ICs combine 1700 V GaN and three other recent innovations: independent, accurate, multi-output regulation; FluxLink™, our secondary-side regulation (SSR) digital isolation communications technology; and zero voltage switching (ZVS) without an active-clamp, which all but eliminates switching losses." | 04.11.2024 11:30:00 | Nov | news_2024-11-15_16.jpg | \images\news_2024-11-15_16.jpg | https://investors.power.com/news/news-details/2024/CORRECTING-and-REPLACING-Power-Integrations-Launches-1700-V-GaN-Switcher-IC-Setting-New-Benchmark-for-Gallium-Nitride-Technology/default.aspx | power.com |
| Oscilloscope and Generator Lines | Rigol Technologies introduced its DG5000 Pro Serie... | 12179 | Product Release | Oscilloscope and Generator Lines | Rigol Technologies introduced its DG5000 Pro Series Generators and DHO/MHO5000 Series Oscilloscopes. The DHO/MHO5000 Series brings more oscilloscope performance, while the DG5000 Pro generators are arbitrary waveform generators with higher figures of merit. Combining 12-bit resolution with up to 1 GHz bandwidth and 500 Mpts record length, up to 8 channels and mixed-signal configurations, the DHO/MHO5000 Series High-Resolution Oscilloscopes are available with configurations offering 4 or 8 analog input channels and either 500 MHz or 1 GHz bandwidth. These instruments deliver 4 GSamples/s maximum real-time sampling, with the 4-channel units providing that rate across all channels. For mixed-signal measurement applications, the MHO5000 Series models combine 4 or 6 analog input channels with 16 digital channels and similar bandwidth choices as the DHO5000 models. For additional utility, an integrated function generator is an available option for the 4-channel MHO5000 models. Offering 16-bit vertical resolution, up to 500 MHz maximum output frequency, 2.5 GSamples/s maximum sample rate and a 0.8 ns (800 ps) square wave rise time, the DG5000 Pro provides high-frequency waveforms and generates complex sequence generations. The DG5000 Pro Series delivers a maximum arbitrary waveform length of 128 Mpts/channel while supporting multi-pulse output, a variety of analog and digital modulation types, and IQ digital modulation. Sequence Mode is an option and enables the playback of intricate pattern segments, with looping of up to 512 cycles. Sequence Mode also enables complex functions like repeat, wait, event, and jump. | 04.11.2024 09:30:00 | Nov | news_2024-11-15_14.jpg | \images\news_2024-11-15_14.jpg | https://eu.rigol.com/ | rigol.com |
| Next Generation of GaN Power Discretes | Infineon Technologies launched a family of high-vo... | 12177 | Product Release | Next Generation of GaN Power Discretes | Infineon Technologies launched a family of high-voltage discretes, the CoolGaN™ Transistors 650 V G5. Target applications for this new product family range from consumer and industrial switched-mode power supplies (SMPS) such as USB-C adapters and chargers, lighting, TV, data center and telecom rectifiers to renewable energy and motor drives in home appliances. The latest CoolGaN generation is designed as a drop-in replacement for the CoolGaN Transistors 600 V G1, however, with improved figures of merit. Compared to key competitors and previous product families from Infineon, the CoolGaN Transistors 650 V G5 offer up to 50 percent lower energy stored in the output capacitance (E <sub>oss</sub>), up to 60 percent improved drain-source charge (Q <sub>oss</sub>) and up to 60 percent lower gate charge (Q <sub>g</sub>) improving both hard- and soft-switching applications. This leads to a significant reduction in power loss compared to traditional silicon technology, ranging from 20 to 60 percent depending on the specific use case. The members of the high-voltage transistor product family offer a wide range of R <sub>DS(on)</sub> package combinations. Ten R <sub>DS(on)</sub> classes are available in various SMD packages, such as ThinPAK 5x6, DFN 8x8, TOLL and TOLT. In the future, CoolGaN will transition to 12-inch production. | 04.11.2024 07:30:00 | Nov | news_2024-11-15_12.jpg | \images\news_2024-11-15_12.jpg | https://www.infineon.com/cms/en/about-infineon/press/market-news/2024/INFPSS202411-017.html | infineon.com |
| 8-Channel Driver and Photo Receiver Amplifier IC | Apex Microtechnology announced two devices in thei... | 12176 | Product Release | 8-Channel Driver and Photo Receiver Amplifier IC | Apex Microtechnology announced two devices in their Precision IC product line: an 8-channel driver and a photo receiver amplifier IC. The devices provide supply voltages of up to 350 V and feature multi-channel architectures. Typical applications are e. g. piezoelectric transduction, capacitive actuation and LED drivers. The AIC1513 is a rigid general purpose high voltage driver IC with 8 high voltage push-pull outputs to drive capacitive and resistive loads such as piezoelectric transducers, electroluminescent devices and micro-mechanical actuators. The maximum operating voltage is 300V, and each output can handle currents up to 40 mA. The device has been designed for harsh industrial applications. The AIC1638 is an integrated receiver amplifier designed for high-sensitivity photo diodes used in applications like light barriers, smoke detectors, light curtains etc. Filtering out ambient light and amplifying the detected pulses from a photo diode, the conditioned signals are used for driving a current mirror output stage. Implementing an integrated polarity protection, the device can be used in a multiplexed configuration, simplifying the wiring of the application. It is suited for light sensing applications ranging from a few millimeters to several meters. | 31.10.2024 06:30:00 | Oct | news_2024-11-15_11.jpg | \images\news_2024-11-15_11.jpg | https://www.apexanalog.com/press/product-news-aic1513-aic1638.html | apexanalog.com |
| The next Generation of HIL Compatible Digital Twin | ABB has partnered with Typhoon HIL to create the D... | 12167 | Industry News | The next Generation of HIL Compatible Digital Twin | ABB has partnered with Typhoon HIL to create the DriveLab ACS880 HIL compatible digital twin. This collaboration is intended to bring a realistic, scalable, and easy to use real-time simulation platform to a wide range of industrial applications. DriveLab ACS880 is the next generation of Hardware-in-the-Loop (HIL) simulation technology. It is specifically tailored and geared towards simplifying the integration of ABB variable speed drives (VSD) systems. It will enable users to test and validate the system via a test automation capability which is a key component of top-tier customer support. HIL simulation is used to validate both component and system-level behavior of the drives and drive systems in real-world applications ranging from compressors, conveyers, and cranes to large scale energy storage, microgrids and more. The DriveLab ACS880 serves as a digital twin, integrating the control hardware, firmware, and software of the ACS880 drives with Typhoon HIL's high-fidelity digital models. These digital models virtually represent the ACS880 drive's hardware, including its connected components, such as the grid, motors, filters, batteries, protection devices, and the electro-mechanical elements. | 30.10.2024 07:00:00 | Oct | news_2024-11-15_2.png | \images\news_2024-11-15_2.png | https://new.abb.com/news/detail/120505/abb-and-typhoon-hil-create-drivelab-acs880-the-next-generation-of-hil-compatible-digital-twin | abb.com |
| The World's thinnest Silicon Power Wafer | Infineon Technologies has reached a breakthrough i... | 12175 | Industry News | The World's thinnest Silicon Power Wafer | Infineon Technologies has reached a breakthrough in handling and processing the thinnest silicon power wafers ever manufactured, with a thickness of only 20 µm and a diameter of 300 mm, in a high-scale semiconductor fab. The ultra-thin silicon wafers are only a quarter as thick as a human hair and half as thick as current state-of-the-art wafers of 40-60 µm. According to Infineon this will "significantly help increase energy efficiency, power density and reliability in power conversion solutions for applications in AI data centers as well as consumer, motor control and computing applications". Halving the thickness of a wafer reduces the wafer's substrate resistance by 50 percent, reducing power loss by more than 15 percent in power systems, compared to solutions based on conventional silicon wafers. For high-end AI server applications, where growing energy demand is driven by higher current levels, this is particularly important in power conversion: Here voltages have to be reduced from 230 V to a processor voltage below 1.8 V. The ultra-thin wafer technology boosts the vertical power delivery design, which is based on vertical Trench MOSFET technology and allows a very close connection to the AI chip processor, thus reducing power loss and enhancing overall efficiency. This was achieved by applying a unique wafer grinding approach, since the metal stack that holds the chip on the wafer is thicker than 20 µm. The technology has been qualified and applied in Infineon's Integrated Smart Power Stages (DC/DC converter) which have already been delivered to first customers. | 29.10.2024 15:00:00 | Oct | news_2024-11-15_10.jpg | \images\news_2024-11-15_10.jpg | https://www.infineon.com/cms/en/about-infineon/press/press-releases/2024/INFXX202410-013.html | infineon.com |
| Strategic Technology Partnership with McLaren Formula E Team | TDK Corporation and McLaren Racing have started a ... | 12173 | Industry News | Strategic Technology Partnership with McLaren Formula E Team | TDK Corporation and McLaren Racing have started a strategic multi-year, technology partnership to combine their technological expertise and build a high-performance future through the cutting-edge electric vehicle (EV) motorsport platform of Formula E, and ever-growing esports field. TDK has formed a partnership with the NEOM McLaren Formula E Team and McLaren Shadow F1 Sim Racing Team. As a technology partner, TDK are using motorsport and racing as a testbed to advance technologies that could help shape the future of EV, gaming and beyond. According to the companies involved, "Formula E serves as a testbed for cutting-edge EV technology that has the potential to influence the future general EV market". TDK aims to extend this technology collaboration approach with McLaren to the gaming field as well. | 29.10.2024 13:00:00 | Oct | news_2024-11-15_8.png | \images\news_2024-11-15_8.png | https://www.tdk.com/en/news_center/press/20241029_01.html | tdk.com |
| Early Bird Registration Now Open for the 40th Annual APEC 2025 in Atlanta | Early bird registration is now open for the 40th A... | 12169 | Event News | Early Bird Registration Now Open for the 40th Annual APEC 2025 in Atlanta | Early bird registration is now open for the 40th Annual Applied Power Electronics Conference (APEC), running March 16-20 at the Georgia World Convention Center in Atlanta. The APEC 2025 conference and exposition gathers power electronics engineers, academics and students from all over the world to learn about the latest research, technologies and products. Early bird registration ends Jan. 13, 2025. Full registration includes access to the APEC Technical Program. Comprising nearly 800 paper presentations, sessions and seminars, the conference offers a broad scope of content: APEC Plenary Session (visionary talks by distinguished speakers), Technical Sessions (lecture sessions and dialogue sessions based on peer-reviewed papers), Industry Sessions (presentations showcasing work in all areas of power electronics), Professional Education Seminars (in-depth seminars on practical aspects of power electronics), Debate – formerly RAP – Sessions (expert panelists identify three hot topics for friendly debate) as well as Exhibitor Presentations (exhibitor companies highlight new products and technologies). Also included in the full registration package is admission to the APEC 2025 Exposition and Special Events. The 2025 exposition will gather nearly 300 exhibitors to the sold-out exhibit floor. With its lively, interactive trade show environment, APEC 2025 offers participation in such events as the MicroMouse contest, the FIRST Robotics demonstration and the Wednesday evening Social Event celebrating APEC's 40th anniversary. | 29.10.2024 09:00:00 | Oct | news_2024-11-15_4.jpg | \images\news_2024-11-15_4.jpg | https://apec-conf.org/attendees/registration/ | apec-conf.org |
| Call for Proposals for Innovation Award & Young Engineer Award | The Semikron Danfoss Innovation Award and the Semi... | 12168 | Industry News | Call for Proposals for Innovation Award & Young Engineer Award | The Semikron Danfoss Innovation Award and the Semikron Danfoss Young Engineer Award are given for outstanding innovations in projects, prototypes, services or novel concepts in the field of power electronics in Europe, combined with notable societal benefits in form of supporting environmental protection and sustainability by improving energy efficiency and conservation of resources. The prizes are awarded in cooperation with the European ECPE Network. With the award Semikron Danfoss wants to motivate people of all ages and organizations of any legal status to deal with innovations in power electronics, a key technology of the 21st century, in order to improve environmental protection and sustainability by energy efficiency and conservation of resources. The Semikron Danfoss Innovation and Young Engineer Prizes 2025 will be awarded in the frame of the ECPE Annual Event in April 2025. A single person or a team of researchers can be awarded. Semikron Danfoss Innovation Award includes prize money of EUR 10,000, while the Semikron Danfoss Young Engineer Award for researchers who have not yet completed their 30th year of age includes prize money of EUR 3,000. The award targets at projects, prototypes, services and novel concepts developed in Europe, which did not yet appear on the market, which are used in a novel application, or which form an absolute novelty, and therewith fulfil the requirement to be extraordinary and remarkable. To apply for the awards own applications as well as proposals from third parties are welcomed. The deadline for submission ends on 31.01.2025. | 28.10.2024 08:00:00 | Oct | news_2024-11-15_3.png | \images\news_2024-11-15_3.png | https://www.semikron-danfoss.com/about-semikron-danfoss/news-press/detail/announcement-and-call-for-proposals-for-semikron-danfoss-innovation-award-semikron-danfoss-young-engineer-award.html | semikron-danfoss.com |
| 3D Power Design and Manufacturing Symposium (3D-PEIM) 2025 | The PSMA Packaging and Manufacturing Committee ann... | 12172 | Event News | 3D Power Design and Manufacturing Symposium (3D-PEIM) 2025 | The PSMA Packaging and Manufacturing Committee announce its Fifth International Symposium on 3D Power Electronics Integration and Manufacturing (3D-PEIM-20235). 3D-PEIM will take place July 8–10, 2025 at the National Renewable Energy Laboratory (NREL) in Golden, Colorado. The symposium is designed for any engineer or manager involved in the design and manufacturing of high-density power sources using 3D technology. It will feature key speakers and technical sessions focused on increasing the power density and performance of power solutions. Plenary presentations will include: "Beyond 2030: Powering the E-Powertrain with High-Value and High-Efficiency Power Conversion Systems - A BorgWarner Perspective", presented by Harsha Nanjundaswamy, BorgWarner, "Advanced Packaging to System Integration - Trends and Challenges", presented by Devan Iyer, IPC and "The Power Delivery and Energy Storage Challenge in Advanced Packaging", presented by Subramanian Iyer, University of California Los Angeles. Attendees are also invited to tour the power electronics facilities of the National Renewable Energy Laboratory. | 25.10.2024 12:00:00 | Oct | news_2024-11-15_7.png | \images\news_2024-11-15_7.png | https://www.3d-peim.org/ | 3d-peim.org |
| Caroline Pannier to take over as Exhibition Director of electronica | With effect from December 1, 2024, Caroline Pannie... | 12151 | People | Caroline Pannier to take over as Exhibition Director of electronica | With effect from December 1, 2024, Caroline Pannier will become the new Exhibition Director of electronica. She succeeds Katja Stolle, who will in future take over as Executive Director of Technology Fairs at Messe München from Dr. Martin Lechner, who is retiring in December. Caroline Pannier has worked at Messe München in the field of electronics trade fairs for almost 13 years. The business graduate with an LL.M in technology law has successfully demonstrated her expertise there, among other things, as Exhibition Director of productronica and most recently as Deputy Exhibition Director of electronica. "As the most important international meeting place for the industry, electronica brings together innovations and trends, and provides new stimulus. I am very much looking forward to working with my team and in close cooperation with the industry to further develop the trade fair and set new trends," says Caroline Pannier about her new role. | 24.10.2024 09:00:00 | Oct | news_2024-11-01_4.jpg | \images\news_2024-11-01_4.jpg | https://electronica.de/en/trade-fair/journalists/press-releases/detail/caroline-pannier-to-take-over-as-exhibition-director-of-electronica.html | electronica.de |
| Zero-flux DC Current Transducer selected for technical Facelift and Renovation Program | For a for technical facelift and renovation progra... | 12148 | Industry News | Zero-flux DC Current Transducer selected for technical Facelift and Renovation Program | For a for technical facelift and renovation program of its North Area (NA), CERN has selected the DM1200 zero-flux DC current transducer (DCCT) from Danisense for use in the CERN-designed POLARIS power converters. Comments Miguel Cerqueira Bastos, Section Leader in the Electrical Power Converter group at CERN: "The DM1200 is a current output DCCT and, as such, it provides a current signal proportional to the measured current, which in this case is the output current of the POLARIS power converter. We convert the output current from the DCCT into a voltage signal, then digitize it, and use it in a digital current loop to precisely control the current in the magnets of the NA experimental lines." Based on Danisense's ultra stable closed loop flux gate technology, the DM1200 current transducer benefits from very low offset and ultra low drift. The device was successfully evaluated by CERN for use with DC currents up to 2kA with a linearity error less than 1 ppm. With its specific design it provides high resolution for precise monitoring, reliable and consistent performance, and ruggedness for durability. Danisense's DM1200 DCCT has been chosen for the new POLARIS power converter series because of its excellent balance between performance and cost at primary currents as high as 2kA. | 23.10.2024 06:00:00 | Oct | news_2024-11-01_1.jpg | \images\news_2024-11-01_1.jpg | https://danisense.com/ | danisense.com |
| EMI Suppression in the Low-Frequency Range directly on the Busbar | With the WE-OEFA-LFS ferrite, Würth Elektronik has... | 12164 | Product Release | EMI Suppression in the Low-Frequency Range directly on the Busbar | With the WE-OEFA-LFS ferrite, Würth Elektronik has released an oval-shaped ferrite ring for interference suppression at low frequencies. Thanks to its individual shape, the ferrite ring is able to slide over busbars for interference suppression. Its MnZn core material enables it to suppress low-frequency interference. The main application area for the new ferrite is electric vehicles. The AEC-Q200-certified WE-OEFA-LFS, with an operating temperature range of -40 to 105 °C, is designed for high-current applications and the frequency range from 1 to 100 MHz. This enables the ferrite to suppress electromagnetic interference in battery management systems, inverters, on-board chargers, cable harnesses and many other applications. The latest interference suppression ferrite in Würth Elektronik's portfolio measures 15.6 × 65.4 × 35.4 mm³, while the cable or busbar it encloses can measure 43 × 13 mm². | 22.10.2024 14:30:00 | Oct | news_2024-11-01_17.jpg | \images\news_2024-11-01_17.jpg | https://www.we-online.com/en/news-center/press/press-releases?d=WE-OEFA-LFS | we-online.com |
| Global Distribution Agreement regarding Ideal Switch Products | Menlo Microsystems (Menlo Micro), a company claimi... | 12155 | Industry News | Global Distribution Agreement regarding Ideal Switch Products | Menlo Microsystems (Menlo Micro), a company claiming to be "responsible for bringing to market the greatest electronic component innovation since the transistor with its Ideal Switch® technology", announced a global distribution agreement with DigiKey. Under the terms of the agreement, DigiKey becomes a franchised distributor for worldwide marketing and sales of Menlo Micro's Ideal Switch products. | 22.10.2024 13:00:00 | Oct | news_2024-11-01_8.jpg | \images\news_2024-11-01_8.jpg | https://menlomicro.com/newsroom/menlo-micro-announces-global-distribution-agreement-with-digikey-to-promote-and-deliver-ideal-switch-products | menlomicro.com |
| Collaboration to expand Consulting Services | Foxy Power announced a partnership with DL Consult... | 12154 | Industry News | Collaboration to expand Consulting Services | Foxy Power announced a partnership with DL Consulting. This collaboration is based on technological business development paired with industry-wide market analyses to enable faster success in the market. By combining the expertise of both companies, it will allow for superior consulting experience and will give the common customer base access to the specialist from the industry. In its consulting services DL Consulting specializes on wide bandgap solutions like SiC and GaN including market research, power electronics design, acquisition services, go-to-market strategies and advisory to institutional investors. The company will deliver its know-how and services to Foxy Power's customer base to enable a better customer journey. Foxy Power, an advocate for startups as well as other companies at the forefront of disruptive technologies by delivering worldwide business development, sales, and strategy services. Driving the concept of product value maximization, Foxy Power enhances manufacturers' sales outreach, emphasizing an application-centric approach. | 22.10.2024 12:00:00 | Oct | news_2024-11-01_7.jpg | \images\news_2024-11-01_7.jpg | https://consulting.liesabeths.de/ | consulting.liesabeths.de |
| Quick charging EVs from Household Power Outlets with 99% Efficiency | On the EnerConnect project, researchers at Fraunho... | 12171 | Industry News | Quick charging EVs from Household Power Outlets with 99% Efficiency | On the EnerConnect project, researchers at Fraunhofer IZM are testing bidirectional blocking gallium nitride (GaN) transistors to design a system that could be used with the next generation of active converters and rectifiers. The hardware removes the need for a separate conversion stage and can achieve record 99% efficiency. As part of the EnerConnect project funded by Germany's Ministry of Education and Research, scientists at the Fraunhofer Institute for Reliability and Microintegration IZM and the Technical University of Berlin have teamed up with their industry partners Delta Electronics Inc., BIT GmbH, and Infineon Technologies AG to produce a system with bidirectional blocking GaN transistors. These transistors bring substantial benefits in terms of power density and efficiency and promise to make charging electric vehicles from commonplace home sockets much more effective. The buck-boost converter that the researchers are working on has never yet played much of a role in power electronics, as it would have been far too complex with conventional components. It can work with higher or lower input voltages. Current practice for electric vehicles is to have active rectifiers operating at high voltages. The new circuit currently being worked on at Fraunhofer IZM would allow the voltage to be lower, in turn reducing the switching losses in the transistor. The researchers are working towards a target switching frequency of 300 kHz, which would allow power density to be ramped up to 15 kW per liter – a full 800% over the chargers currently in the market. | 21.10.2024 11:00:00 | Oct | news_2024-11-15_6.jpg | \images\news_2024-11-15_6.jpg | https://www.izm.fraunhofer.de/en/news_events/tech_news/enerconnect.html | izm.fraunhofer.de |
| AEC-Q200 Compliant, Automotive Grade Multilayered Varistor Series | Bourns announced its Model BVRA Series AEC-Q200 co... | 12165 | Product Release | AEC-Q200 Compliant, Automotive Grade Multilayered Varistor Series | Bourns announced its Model BVRA Series AEC-Q200 compliant, automotive grade multilayered varistors. These low voltage varistors feature transient energy absorption due to improved energy volume distribution and power dissipation. Designed specifically for use in automotive circuits requiring surge protection, the new series can also be applied to protect other integrated circuits and components such as power supplies, entertainment electronics as well as CAN, LIN and Flexray-based modules. The Model BVRA Series is available with working voltages from 5.5 to 85 VDC and provides a response time of less than 0.5 ns to help ensure prompt energy diversion during transient events. Offered in a range of compact 0402, 0603, 0805 and 1206 SMD packages, the new varistors have an insulator overcoat designed to help enhance efficiency and streamline integration. In addition, these models meet the IEC 61000-4-5 standard, and deliver stable leakage current for a high reliability, consistent overvoltage protection solution. | 17.10.2024 15:30:00 | Oct | news_2024-11-01_18.jpg | \images\news_2024-11-01_18.jpg | https://www.bourns.com/news/press-releases/pr%2f2024%2f10%2f17%2fbourns-announces-aec-q200-compliant--automotive-grade-multilayered-varistor-series | bourns.com |
| 300 W Power Supplies in 3" x 5" Packages | TRACO Power announced TXO 300, a compact 300 W AC/... | 12161 | Product Release | 300 W Power Supplies in 3" x 5" Packages | TRACO Power announced TXO 300, a compact 300 W AC/DC Power supply in an 3" x 5" open-frame construction. The TXO line specifically focuses on industrial power supplies. With an efficiency of up to 92 % these models are designed to meet the ErP directive (< 0.3 W no load power consumption). Features include internal EN55032 class B filter, as well as EMC characteristics dedicated for applications in industrial/automation and test & measurement fields. While the input range is 85-264 V<sub>AC</sub> it is full load convection cooled from -20 °C to +50 °C, and protection class II prepared. The supply units offer 3000 V<sub>AC</sub> reinforced I/O isolation, an internal EN55032 class B filter, short circuit and overvoltage protection. They are EN 61000-3-2 compliant and according to IEC/EN/UL 62368-1 safety-approved. | 17.10.2024 11:30:00 | Oct | news_2024-11-01_14.jpg | \images\news_2024-11-01_14.jpg | https://www.tracopower.com/int/txo | tracopower.com |
| Electronic Fuses (eFuse ICs) for HV Power Management | Toshiba Electronics has launched two additional el... | 12160 | Product Release | Electronic Fuses (eFuse ICs) for HV Power Management | Toshiba Electronics has launched two additional electronic fuses (eFuse ICs) named TCKE903NL and TCKE905ANA, which are reusable, thereby reducing maintenance costs and recovery time for equipment repairs, and support various functions to protect power supply line circuits. The eFuses are suited for a wide range of power management applications while operating with a switch ON resistance of typically 34 mΩ and an output current of up to 4.0 A. The products are suited for electronic slew rate control and power supply line circuit protection in industrial applications such as servers, professional kitchen equipment and more. The TCKE9 series of 25 V input voltage eFuse ICs offers two product types: an auto-retry type that allows the eFuse IC to automatically recover the circuit itself, and a latch type that is recovered by an external signal. Two different clamping voltage levels are available, i.e. 3.8 V and 5.7 V. The current limit and voltage clamp functions of the TCKE9 series protect the circuit against overcurrent and overvoltage conditions, including over temperature and short-circuit protection features to protect the circuit by immediately shutting off when abnormal heat is generated in the circuit or an unexpected short-circuit condition occurs. As Toshiba intends to obtain IEC 62368-1 certification, the international safety standard for ICT and AV equipment, the eFuse ICs will also simplify and accelerate certification testing process of the end equipment. The TCKE9 series is available in a thin and compact WSON8 package measuring 2.0 mm × 2.0 mm x 0.8 mm. | 17.10.2024 10:30:00 | Oct | news_2024-11-01_13.jpg | \images\news_2024-11-01_13.jpg | https://toshiba.semicon-storage.com/eu/company/news/2024/10/power-management-ics-20241017-1.html | toshiba.semicon-storage.com |
| AC/DC Flyback Controllers | Nexperia introduced a series of AC/DC flyback cont... | 12159 | Product Release | AC/DC Flyback Controllers | Nexperia introduced a series of AC/DC flyback controllers. The NEX806/8xx and NEX8180x are designed for GaN-based flyback converters in devices such as power delivery (PD) chargers, adapters, wall sockets, strip sockets, industrial power and auxiliary power supplies, and other AC/DC conversion applications requiring high power density. The NEX806xx/NEX808xx are quasi-resonant/multi-mode flyback controllers which operate from a V<sub>CC</sub> range between 10-83 V, while the NEX81801/NEX81802 are adaptive synchronous rectifier controllers. These ICs can be used in combination with Nexperia's NEX52xxx PD controllers and other discrete power devices to deliver a turn-key flyback converter solution that optimizes the current sense voltage level and PFM mode, reduces standby power, and achieves high efficiency across the entire load range. The primary side controller can be used to drive a silicon MOSFET or GaN transistor directly. These ICs employ the TSOT23-6 flip-chip package and provide an over temperature protection (OTP) function as well as additional protection features. | 17.10.2024 09:30:00 | Oct | news_2024-11-01_12.jpg | \images\news_2024-11-01_12.jpg | https://www.nexperia.com/about/news-events/press-releases/-AC-DC-flyback-controllers-from-Nexperia-enable-higher-power-density-GaN-based-flyback-converters | nexperia.com |
| 98 % Efficiency at 158 kW/l: Automotive-grade Power Modules deliver 48 V in 800-V EVs | Vicor has released three automotive-grade power mo... | 12156 | Product Release | 98 % Efficiency at 158 kW/l: Automotive-grade Power Modules deliver 48 V in 800-V EVs | Vicor has released three automotive-grade power modules for 48V electrical vehicle systems, which are claimed to "deliver industry-leading power density, and support automotive OEMs and tier one production in 2025". The modules named BCM®6135, DCM™3735 and PRM™3735 use AEC-Q100 certified Vicor-designed ICs and have completed the PPAP process with automotive customers. Operating with a power density of 158 kW/l the BCM6135 is a 98 % efficient 2.5 kW BCM bus converter which converts 800 V from the traction battery to 48 V to provide a safety extra-low voltage (SELV) power supply for the vehicle. The BCM6135 internally provides the isolation between high voltage and low voltage which creates a significant reduction in terms of space required for the DC/DC conversion. The bidirectional rapid current transient response rate of 8 MA/s allows the BCM6135 to replace a 48 V battery - by serving as a virtual 48 V battery in the xEV vehicle and reducing vehicle costs by up to $100 and the vehicle mass by up to 25 kg. The DCM3735 2.0 kW DCM DC/DC converter transforms an unregulated 48 V input with a power density of 300 kW/l into a regulated 12 V output, which can be trimmed within a range of 8 – 16 V. The PRM3735 is a 2.5 kW PRM regulator for 48 V power that is 99.2% efficient with 260 kW/l power density. When used as a part of the 48 V zonal architecture, the DCM3735 can be mounted remotely to create a local 12 V supply in a vehicle zone. This application method allows the PDN designer to effectively support 12 V loads while achieving up to 90 % of the cost and weight savings that come from transitioning to a 48 V bus. These modules can be arranged in over 300 configurations. | 16.10.2024 06:30:00 | Oct | news_2024-11-01_9.jpg | \images\news_2024-11-01_9.jpg | https://www.vicorpower.com/press-room/new-high-density-automotive-grade-power-modules/ | vicorpower.com |
| AC programmable Power Sources | The GENESYS™ AC (GAC) and GENESYS™ AC ... | 12163 | Product Release | AC programmable Power Sources | The GENESYS™ AC (GAC) and GENESYS™ AC PRO (GAC-PRO) series of 2 kVA and 3 kVA rated programmable AC power sources from TDK-Lambda are claimed to provide the highest power density for a fully featured programmable AC power source with a 1U chassis height. They offer the ability to allow AC, DC, or combined AC+DC operation while allowing full-rated power and current in DC modes, as well as advanced functions such as waveform generation and harmonics analysis as standard. The GENESYS AC PRO also includes real-time analog control functionality necessary for more complex test scenarios, such as hardware in the loop (HIL). Other applications include automated test equipment, avionics airborne equipment, aircraft electrical power, defence (RTCA, Boeing, Airbus Standards), automotive, e-mobility, and power source testing. 2 kVA and 3 kVA units may be user-combined for additional power and to provide multiple phase outputs. The front panel controls can be made through the use of a capacitive touch display. Multiple languages are catered for, including, Chinese, English, French, German, Japanese, Korean, and Spanish. As standard, LAN, USB, RS232, RS485, and Analog Programming / Monitoring are provided, with optional IEEE / GPIB. The included remote GUI software allows the user full control, sequence programming, plus the option to use pre-programmed test standards for common IEC, aerospace, and marine tests. | 15.10.2024 13:30:00 | Oct | news_2024-11-01_16.jpg | \images\news_2024-11-01_16.jpg | https://www.emea.lambda.tdk.com/uk/products/genesys-ac-source | lambda.tdk.com |
| SiC Company receives Funding and more to invest $ 2.5 Billion in the US | The U.S. Department of Commerce and Wolfspeed have... | 12150 | Industry News | SiC Company receives Funding and more to invest $ 2.5 Billion in the US | The U.S. Department of Commerce and Wolfspeed have signed a non-binding preliminary memorandum of terms (PMT) for up to $ 750 million in proposed direct funding under the CHIPS and Science Act. In addition, a consortium of investment funds have agreed to provide Wolfspeed an additional $ 750 million of new financing. Together these investments support Wolfspeed's long-term growth plans and bolster US domestic production of silicon carbide to power clean energy systems. In addition, Wolfspeed expects to receive $1 billion of cash tax refunds from the advanced manufacturing tax credit under the CHIPS and Science Act (section 48D), giving the com¬pany, in total, access to up to $ 2.5 billion of expected capital to support the expansion of silicon carbide manufacturing in the United States. According to Gregg Lowe, CEO of Wolfspeed, this is "not just about growth for Wolfspeed - it's about driving technological advancement that powers the future." These proposed funds, which are expected to be received upon milestone achievements in the coming years, would enable Wolfspeed to complete its multi-billion-dollar greenfield U.S. capacity expansion plan. In addition to the proposed direct funding, Wolfspeed intends to benefit from the U.S. Treasury Department Investment Tax Credit of up to 25% of the qualified capital expenditures primarily related to its construction and installation of equipment at The John Palmour Manufacturing Center for Silicon Carbide in Siler City, NC and comple¬tion of the Mohawk Valley Fab M-Line West Expansion in Utica, NY. | 15.10.2024 08:00:00 | Oct | news_2024-11-01_3.jpg | \images\news_2024-11-01_3.jpg | https://www.wolfspeed.com/company/news-events/news/wolfspeed-announces-750m-in-proposed-funding-from-us-chips-act-and-additional-750m-from-investment-group-led-by-apollo-galvanizing-global-leadership-in-delivering-next-generation-silicon-carbide/ | wolfspeed.com |
| Combining Silicon and Silicon Carbide in a Power Module for EVs | Infineon Technologies is introducing the HybridPAC... | 12157 | Product Release | Combining Silicon and Silicon Carbide in a Power Module for EVs | Infineon Technologies is introducing the HybridPACK™ Drive G2 Fusion, trying to establish "a new power module standard for traction inverters in the e-mobility sector". The HybridPACK Drive G2 Fusion is a plug'n'play power module that implements a combination of silicon and SiC technologies. One of the main differences between silicon and SiC in power modules is that SiC has a higher thermal conductivity, breakdown voltage and switching speed, making it more efficient, but also more expensive than silicon-based power modules. With the new module, the SiC content per vehicle can be reduced, while maintaining vehicle performance and efficiency at a lower system cost. The company claims that "system suppliers can realize nearly the system efficiency of a full SiC solution with only 30 percent SiC and 70 percent silicon area". The HybridPACK Drive G2 Fusion module features up to 220 kW in the 750 V class over the entire temperature range from -40 °C to +175 °C. | 15.10.2024 07:30:00 | Oct | news_2024-11-01_10.jpg | \images\news_2024-11-01_10.jpg | https://www.infineon.com/cms/en/about-infineon/press/press-releases/2024/INFATV202410-010.html | infineon.com |
| Capacitors for tough Conditions | Rutronik now offers the C4AQ-P capacitors from Kem... | 12162 | Product Release | Capacitors for tough Conditions | Rutronik now offers the C4AQ-P capacitors from Kemet for use in particularly challenging environments. They function reliably in a temperature range of -55 °C to +125 °C and a voltage range of 450 V<sub>DC</sub> to 1600 V<sub>DC</sub>. In addition, the capacitors have self-healing capabilities. They are AEC-Q200 qualified, THB (temperature-humidity bias) tested and are suited for applications in the automotive industry, in renewable energy systems or in energy storage systems. They are available in the capacitance range of 4.7 nF to 8.2 nF with an expected operating life at 125 °C of 4000 hours. Cable spacing is 27.5 mm to 52.5 mm. | 14.10.2024 12:30:00 | Oct | news_2024-11-01_15.jpg | \images\news_2024-11-01_15.jpg | https://www.rutronik24.com/product/kemet/c4aqobu4500p11j/16128433.html | rutronik24.com |
| GaN power ICs with Autonomous EMI Control and loss-less Sensing | Navitas announced GaNSlim™, a new generation... | 12158 | Product Release | GaN power ICs with Autonomous EMI Control and loss-less Sensing | Navitas announced GaNSlim™, a new generation of integrated GaN power ICs integrating drive, control, and protection, with integrated EMI control and loss-less current sensing, all within a high thermal performance proprietary DPAK-4L package. Additionally, with a startup current below 10 µA, GaNSlim devices are compatible with industry-standard SOT23-6 controllers and eliminate HV startup. Integrated features such as loss-less current sensing eliminate external current sensing resistors, while over-temperature protection increases system robustness and auto sleep-mode raises light and no-load efficiency. Autonomous turn-on/off slew rate control improves efficiency and power density while reducing external component count, system cost and EMI. The DPAK package enables 7 °C lower temperature operation versus conventional alternatives, supporting high-power-density designs with ratings up to 500 W. Target applications include chargers for mobile devices and laptops, TV power supplies, lighting, etc. Devices in the NV614x GaNSlim family are rated at 700 V with R<sub>DS(ON)</sub> ratings from 120 mΩ to 330 mΩ and are available in versions optimized for both isolated and non-isolated topologies. | 14.10.2024 08:30:00 | Oct | news_2024-11-01_11.jpg | \images\news_2024-11-01_11.jpg | https://navitassemi.com/navitas-ganslim-power-ics-drive-ease-of-use-system-cost-and-energy-savings-in-mobile-consumer-and-home-appliance/ | navitassemi.com |
| 3D Power Design and Manufacturing Symposium (3D-PEIM) 2025 | The PSMA Packaging and Manufacturing Committee is ... | 12149 | Event News | 3D Power Design and Manufacturing Symposium (3D-PEIM) 2025 | The PSMA Packaging and Manufacturing Committee is pleased to announce its Fifth International Symposium on 3D Power Electronics Integration and Manufacturing (3D-PEIM-20235). 3D-PEIM will take place July 8–10, 2025 at the National Renewable Energy Laboratory (NREL) in Golden, Colorado. The Symposium is designed for any engineer or manager involved in the design and manufacturing of high-density power sources using 3D technology. It will feature key speakers and technical sessions focused on increasing the power density and performance of power solutions. <br>Plenary presentations will include: <br>- Beyond 2030: Powering the E-Powertrain with High-Value and High-Efficiency Power Conversion Systems - A BorgWarner Perspective (Presenter: Harsha Nanjundaswamy, BorgWarner) <br>- Advanced Packaging to System Integration - Trends and Challenges (Presenter: Devan Iyer, IPC) <br>- The Power Delivery and Energy Storage Challenge in Advanced Packaging (Presenter: Subramanian Iyer, University of California Los Angeles) <br>Attendees are also invited to tour the world-class power electronics facilities of the National Renewable Energy Laboratory. | 14.10.2024 07:00:00 | Oct | news_2024-11-01_2.jpg | \images\news_2024-11-01_2.jpg | https://www.3d-peim.org/ | 3d-peim.org |
| 125 V High-Side Gate Driver: Protection by Disconnecting | In battery-powered applications such as motor driv... | 12144 | Product Release | 125 V High-Side Gate Driver: Protection by Disconnecting | In battery-powered applications such as motor drives and SMPS, the power supply architecture often requires that a module can be disconnected from the main supply rail when a fault occurs in that module. High-side disconnect switches (e. g. MOSFETs) can prevent a load short circuit from affecting the battery. Infineon Technologies has now introduced the EiceDRIVER™ 1EDL8011, a high-side gate driver designed to protect battery-powered applications such as cordless power tools, robotics, e-bikes, and vacuum cleaners in the event of a fault. The device is said to "provide fast turn-on and turn-off of high-side N-channel MOSFETs with its high gate current capabilities". The internal charge pump provides the MOSFET gate voltage when the operating input voltage is low. The gate driver IC manages inrush current and provides fault protection. Undervoltage Lockout protection at input voltage prevents the device from operating under hazardous conditions. The driver is available in a DSO-8 package and includes overcurrent protection, adjustable current setting threshold, time delay and a safe start-up mechanism with flexible blanking during MOSFET turn-on transitions. The 1EDL8011 has a operating voltage range of 8 V to 125 V and a gate sinking current of up to 1 A, while the off-mode quiescent current is 1 µA. | 10.10.2024 12:30:00 | Oct | news_2024-10-15_15.jpg | \images\news_2024-10-15_15.jpg | https://www.infineon.com/cms/en/product/power/gate-driver-ics/high-side-drivers/1edl8011/ | infineon.com |
| Partnership to improve Wireless Power with Gallium Nitride Power Semiconductors | Infineon Technologies announced a partnership with... | 12152 | Industry News | Partnership to improve Wireless Power with Gallium Nitride Power Semiconductors | Infineon Technologies announced a partnership with Canada-based AWL-Electricity, a pioneer in MHz resonant capacitive coupling power transfer technology. Infineon provides AWL-E with CoolGaN™ GS61008P allowing the development of advanced wireless power solutions, enabling new ways to solve power challenges in various industries. The partnership combines Infineon's gallium nitride (GaN) technology with AWL-E's MHz resonant capacitive coupling power transfer system, achieving industry-benchmark wireless power efficiencies. Infineon's GaN transistor technology offers highest efficiency and highest power density while operating at highest switching frequencies. This enables AWL-E to increase its system lifetime, reduces downtime and operating costs, and improves ease-of-use for consumers. In the automotive sector, the technology enables a new level of interior experiences and seat dynamics. In industrial systems, it provides near-unconstrained levels of design freedom, such as for automated guided vehicles or robotic applications. Additionally, the technology allows for a fully sealed system design, eliminating the need for charging ports which contributes to reducing global consumption of batteries. | 10.10.2024 10:00:00 | Oct | news_2024-11-01_5.jpg | \images\news_2024-11-01_5.jpg | https://www.infineon.com/cms/en/about-infineon/press/market-news/2024/INFPSS202410-005.html | infineon.com |
| BMS Solutions based on 100 V Bi-directional GaN Technology | Innoscience Technology has launched another genera... | 12140 | Product Release | BMS Solutions based on 100 V Bi-directional GaN Technology | Innoscience Technology has launched another generation of battery management system (BMS) solutions based on VGaN™ technology. With no parasitic body diode and bidirectional control, one single bi-directional (VGaN) device from Innoscience is claimed to be able to "effectively replace two traditional MOS Silicon pairs". The VGaN series brings these features to Over Voltage Protection (OVP) and BMS applications. A 48 V/180 A BMS demo is the latest Innoscience design solution to support a high-side same-port BMS application. This design adopts the company's latest 100 V VGaN product, the INV100FQ030A, which is packaged in a 4 mm x 6 mm² FCQFN and offers a maximum on-resistance of 3.2 mΩ. No heat sink is required with a maximum temperature rise of less than 50°C. The 16-string charging and discharging battery protection system uses the controllable bidirectional conduction and cut-off features of VGaN, enabling four operational states: normal charging and discharging, charging protection, discharging protection, and sleep mode. With 16 VGaNs it is said to be possible to replace 18 pairs of Silicon MOSFETs (36 in total). This 48 V/18 0A high-side BMS solution is suited for home batteries, portable charging station, e-scooters, e-bikes etc., optimizing battery life and safety through efficient charge and discharge control. It reduces temperature rise and system costs while ensuring a compact, portable design. | 10.10.2024 08:30:00 | Oct | news_2024-10-15_11.jpg | \images\news_2024-10-15_11.jpg | https://www.innoscience.com/site/product?el=b1 | innoscience.com |
| Asymmetrical TVS Diode Series for SiC MOSFET Gate Protection | Littlefuse announced the SMFA Asymmetrical Series ... | 12145 | Product Release | Asymmetrical TVS Diode Series for SiC MOSFET Gate Protection | Littlefuse announced the SMFA Asymmetrical Series Surface-Mount TVS Diode, which is claimed to be "the first-to-market asymmetrical TVS solution specifically designed to protect Silicon Carbide MOSFET gates from overvoltage events. The SMFA Asymmetrical Series is engineered specifically for the unique gate protection requirements of SiC MOSFETs. Unlike traditional solutions that require multiple Zener or TVS diodes, the SMFA Series protects against ringing and overshoot phenomena in gate drive circuits using a single component. The devices are suited for AI and data center power supplies, EV infrastructure power system and industrial equipment power supplies. | 08.10.2024 13:30:00 | Oct | news_2024-10-15_16.jpg | \images\news_2024-10-15_16.jpg | https://www.littelfuse.com/about-us/news/news-releases/2024/littelfuse-unveils-industrys-first-asymmetrical-tvs-diode-series-for-sic-mosfet-gate-protection.aspx | littelfuse.com |
| High Frequency GaN Inverter Demonstrator for Automotive | QPT wins a grant for a new Project called VERDE to... | 12136 | Industry News | High Frequency GaN Inverter Demonstrator for Automotive | QPT wins a grant for a new Project called VERDE to develop a high frequency, 400V/60kW GaN inverter demonstrator for automotive use that will help demonstrate that GaN is now superior to SiC or Silicon. This is funded by the UK's Advanced Propulsion Centre (APC) and is designed to help accelerate early-stage technologies to market that will support the shift to net-zero automotive. The other company in the APC Project is RAM Innovations Ltd. This demonstrator features high frequency switching up to 1MHz to enable dramatic savings in waste, weight and power costs in the drive system. Key to this is QPT's pure sign wave output that reduces harshness, noise, and vibration to improve reliability and reduce power consumption. The traction inverter market for EVs was estimated at $17.93bn in 2023 and is projected to reach around $73.08bn by 2032, a CAGR of 16.90% according to Precedence Research. Currently half of the world's electricity is used by electric motors: QPT's technology could reduce their electricity use by 10% which would be a significant reduction in CO<sub>2</sub> production. | 08.10.2024 12:00:00 | Oct | news_2024-10-15_7.jpg | \images\news_2024-10-15_7.jpg | https://www.q-p-t.com/press-releases/qpt-wins-grant-for-apc-project-to-develop-for-high-frequency-gan-inverter-demonstrator-for-automotive | q-p-t.com |
| Finalists are Selected for PSMA's Inaugural Global Energy Efficiency Award | PSMA announces the selection of finalists under co... | 12137 | Industry News | Finalists are Selected for PSMA's Inaugural Global Energy Efficiency Award | PSMA announces the selection of finalists under consideration for its prestigious "Global Energy Efficiency Award." The award will be presented to the winner during next year's Applied Power Electronics Conference (APEC) in Atlanta, March 16-20, 2025, as part of PSMA's 40<sup>th</sup> anniversary celebration. The award highlights PSMA's long-standing tradition of supporting companies making critical energy efficiency improvements to reduce global climate change. Three "Global Energy Efficiency Award" finalists were announced on Energy Efficiency Day, Oct. 2<sup>nd</sup>. Beyond energy conservation, the judging panel evaluated the finalists based on their total potential impact on the power electronics industry, whether through volume shipments or by social outcomes. | 08.10.2024 12:00:00 | Oct | news_2024-10-15_8.png | \images\news_2024-10-15_8.png | https://www.psma.com/ | psma.com |
| Silicon Capacitor Production Line opened in France | Murata Manufacturing has opened production line fo... | 12132 | Industry News | Silicon Capacitor Production Line opened in France | Murata Manufacturing has opened production line for silicon capacitors at its site in Caen, France. Manufactured on a 200-mm mass production line the silicon capacitors can be used in demanding applications such as implantable medical systems, telecommunication infrastructures, and mobile phones. The products produced in the 200-mm line will primarily target the mobile handset market by delivering capacitors in extremely compact sizes, with thicknesses as low as 50 µm. | 04.10.2024 08:00:00 | Oct | news_2024-10-15_3.jpg | \images\news_2024-10-15_3.jpg | https://corporate.murata.com/en-eu/newsroom/news/company/general/2024/1011 | murata.com |
| Shaping the Future of Heat Control Solutions | Thermal Management Expo Europe is taking place in ... | 12130 | Event News | Shaping the Future of Heat Control Solutions | Thermal Management Expo Europe is taking place in Stuttgart, Germany, from 3-5 December 2024. This is a unique opportunity to explore cutting-edge thermal management technologies, materials, and solutions critical to today's fast-evolving industries, from automotive and electronics to energy and aerospace. This year's expo will feature innovative products and solutions for heat dissipation, cooling, and temperature regulation, as well as live demonstrations of breakthrough thermal technologies. Network with industry leaders at the receptions and attend the free conference where technical experts will tackle the latest advancements in thermal management materials and strategies. Find out more and register for your free pass at | 01.10.2024 06:00:00 | Oct | news_2024-10-15_1.jpg | \images\news_2024-10-15_1.jpg | https://www.thermalmanagementexpo-europe.com/?utm_source=bodos_power_systems&utm_campaign=TEE24_Partners | thermalmanagementexpo-europe.com |
| AC Programmable Power | TDK introduced the TDK-Lambda brand GENESYS™... | 12202 | Product Release | AC Programmable Power | TDK introduced the TDK-Lambda brand GENESYS™ AC (GAC) and GENESYS AC PRO (GAC-PRO) series of 2 kVA and 3 kVA rated programmable AC power sources. With a 1U chassis height, the GAC and GAC-PRO offer a higher level of DC functionality than other members of this family – with the ability to allow AC, DC, or combined AC+DC operation. The models allow full-rated power and current in DC modes as well as functions such as waveform generation and harmonics analysis as standard. The PRO model also includes real-time analog control functionality necessary for more complex test scenarios, such as hardware in the loop (HiL). Other applications include automated test equipment, avionics airborne equipment, aircraft electrical power, defence (RTCA, Boeing, Airbus Standards), automotive, e-mobility, and power source testing. The company’s parallel system provides characteristics comparable with that of a single power supply. 2kVA and 3 kVA units may be user-combined for additional power and to provide multiple phase outputs. The front panel controls can be made through the use of a capacitive touch display, providing increased robustness over mechanical switches. Multiple languages are catered for, including, Chinese, English, French, German, Japanese, Korean, and Spanish. As standard, LAN, USB, RS232, RS485, and Analog Programming/Monitoring are provided, with optional IEEE/GPIB. The included remote GUI software allows the user full control, sequence programming, plus the option to use pre-programmed test standards for common IEC, aerospace, and marine tests. The devices are safety-certified to IEC/EN/UL 61010-1 and comply with IEC/EN 61204-3. | 30.09.2024 15:30:00 | Sep | news_2024-12-01_17.jpg | \images\news_2024-12-01_17.jpg | https://www.emea.lambda.tdk.com/uk/news/article/20445 | lambda.tdk.com |
| Current Sensors for Use in DAQ Systems with integrated Burdon Transistor | Available from Danisense is a range of current tra... | 12141 | Product Release | Current Sensors for Use in DAQ Systems with integrated Burdon Transistor | Available from Danisense is a range of current transducers with voltage output, designed to streamline the workflow for engineers utilizing data acquisition (DAQ) systems. These devices integrate the burden resistor directly into the current transducer, mitigating the risk of miscalculations. The DS, DM and DL series current transducers with voltage output from Danisense offer users options for precise measurements of AC and DC currents from 55 A up to 3000 A. The products are well-suited for a wide range of applications, particularly in harsh environments and high-temperature settings such as e-mobility, solar, and wind energy sectors. They offer a 1 V or 10 V BNC voltage output connection, an aperture of up to 68 mm) and very low linearity errors. All products are housed in full aluminum casings and incorporate the Fluxgate technology. For data acquisition users usually employ a variety of instruments, extending beyond traditional oscilloscopes. These instruments often lack a direct current sensor. Consequently, when users require a precision current sensor, they must also use a burden resistor to facilitate the connection. However, this often poses a significant challenge: users need to align the specifications of the current sensor with those of the burden resistor. The complexity of these specifications leaves considerable room for error. | 30.09.2024 09:30:00 | Sep | news_2024-10-15_12.jpg | \images\news_2024-10-15_12.jpg | https://danisense.com/ | danisense.com |
| Power Semiconductors now supplied from 12-inch Wafers | Mitsubishi Electric Corporation announced that its... | 12131 | Industry News | Power Semiconductors now supplied from 12-inch Wafers | Mitsubishi Electric Corporation announced that its Power Device Works' Fukuyama Factory has begun large-scale supply of power semiconductor chips made from 12-inch silicon wafers for the assembly of semiconductor modules. The Si power semiconductor modules will initially be used in consumer products. Going forward, Mitsubishi Electric expects to contribute to green transformation by providing a stable and timely supply of semiconductor chips to meet the growing demand for energy-saving power electronics devices in various applications. The Fukuyama Factory is playing a key role in Mitsubishi Electric's medium-term plan to double its wafer processing capacity for Si power semiconductors by fiscal year 2026 compared to five years earlier. The factory operates on a total floor area of approximately 46,500m² on three floors. | 30.09.2024 07:00:00 | Sep | news_2024-10-15_2.jpg | \images\news_2024-10-15_2.jpg | https://www.mitsubishielectric.com/news/2024/0930.html?cid=rss | mitsubishielectric.com |
| Current-compensated Chokes for Vertical PCB Mounting | Schurter is launching a vertically mountable choke... | 12147 | Product Release | Current-compensated Chokes for Vertical PCB Mounting | Schurter is launching a vertically mountable choke family for PCBs with nanocrystalline cores and "very high inductances". Due to the compact dimensions, the integration of the filter elements on printed circuit boards is an ideal solution. The DKCV-1 choke series is particularly suitable for applications that require high attenuation. Due to the vertical choke arrangement, they also require little space on the PCB. All variants of the DKCV-1 family have the same footprint on the PCB. The chokes are suited for applications like switching power supplies, industrial, medical, laboratory and test equipment. The chokes are designed for currents up to 10 A and voltages up to 300 V<sub>AC</sub> or 450 V<sub>DC</sub> and have ENEC, cUR and UR approvals. For higher power applications, the DKIV-1 series of chokes is available with rated currents up to 50 A. | 27.09.2024 15:30:00 | Sep | news_2024-10-15_18.jpg | \images\news_2024-10-15_18.jpg | https://www.schurter.com/en/datasheet/DKCV-1 | schurter.com |
| MLCCs with Voltage Rating up to 2000 V | Samsung Electro-Mechanics is releasing a range of ... | 12142 | Product Release | MLCCs with Voltage Rating up to 2000 V | Samsung Electro-Mechanics is releasing a range of MLCCs (multi-layer ceramic capacitors) that meet growing demand for high rated voltage solutions within the electric vehicle industry. These 1812 inch (4.5 mm x 3.2 mm) X7R MLCCs are availble with capacitances in the range of 2.2 nF to 470 nF with a voltage rating up to 2000 V<sub>DC</sub>. These MLCCs comply with AEC-Q200, the global standard for stress resistance that all passive electronic components must meet for use within the automotive industry. Suitable for use in operating temperatures up to 125 °C, all of the new MLCCs from Samsung Electro-Mechanics offer RoHS and REACH compliance. | 26.09.2024 10:30:00 | Sep | news_2024-10-15_13.jpg | \images\news_2024-10-15_13.jpg | https://www.samsungsem.com/global/product/passive-component/mlcc.do | samsungsem.com |
| DC EMC Filter for High Power EV Charging Applications | EMIS announces the availability of the MF620 DC EM... | 12139 | Product Release | DC EMC Filter for High Power EV Charging Applications | EMIS announces the availability of the MF620 DC EMI Filter range specially designed for high power electric vehicle charging applications. The DC EMI filters suppress undesirable electrical disturbances in power lines, specifically for EV DC fast charging. The MF620 filter range addressing both common mode and differential mode interference meets the safety requirements of IEC/EN 61851-23 Electric Vehicle Conductive Charging System and UL 2202 Electric Vehicle Charging System Equipment. This high current dual-stage DC EMI/EMC filter series is intended to operate up to 1600 V<sub>DC</sub> at current ratings of 150 A to 1600 A with the option to select the parallel capacitors. Designed with specific capacitance and inductance values to target unwanted frequencies and in addition to EV Charging the filters may be used for Industrial Automation, Renewable Energy Systems, Telecommunication Equipment and Power Supplies. | 26.09.2024 07:30:00 | Sep | news_2024-10-15_10.jpg | \images\news_2024-10-15_10.jpg | https://emisglobal.com/products/emi-filters/dc-filter/mf-620/ | emisglobal.com |
| Ideal Diode Protection Switch with LPS for USB-C Applications | Alpha and Omega Semiconductor released its AOZ1390... | 12143 | Product Release | Ideal Diode Protection Switch with LPS for USB-C Applications | Alpha and Omega Semiconductor released its AOZ1390DI-01 and AOZ1390DI-02 ideal diode protection switches. The devices are well-suited for multi-port Type-C PD 3.0 current sinking applications up to 100 W, such as high-performance laptops, personal computers, monitors, docking, and other Type-C port applications. Designed to enhance USB Type-C efficiency and safety, the AOZ1390DI features Limited Power Source (LPS) functionality. For multi-port ORing or parallel power applications, the LPSB pin of the AOZ1390DI can be connected to the DISB pin of one or more AOZ1390DI devices at other ports. This LPS feature works as a watchdog, disabling the port when another port in the same system is faulty or damaged. In doing so it prevents excessive power flow through the device from other faulty or damaged ports, making the AOZ1390 suitable for multi-port Type-C Power Delivery (PD) applications. The integrated back-to-back MOSFET is claimed to deliver "the industry's lowest ON resistance (18 mΩ typical) and highest SOA to safely handle high currents and a wide range of output capacitances on V<sub>OUT</sub>". The input operating voltage range of the AOZ1390DI is between 3.3 V and 23 V, and both V<sub>IN</sub> and V<sub>OUT</sub> terminals are rated at 30 V absolute maximum with the capability to support up to 8 A switch current. | 25.09.2024 11:30:00 | Sep | news_2024-10-15_14.jpg | \images\news_2024-10-15_14.jpg | https://www.aosmd.com/news/aos-introduces-ideal-diode-protection-switch-limited-power-source-lps-feature-safeguard | aosmd.com |
| 1200 V SiC Schottky Barrier Diodes | Toshiba expanded its silicon carbide diode portfol... | 12123 | Product Release | 1200 V SiC Schottky Barrier Diodes | Toshiba expanded its silicon carbide diode portfolio with ten 1200 V Schottky barrier diodes (SBDs). The TRSxxx120Hx series, comprising five products housed in TO-247-2L packages and five in TO-247 packages, helps designers improve the efficiency of industrial equipment, including photovoltaic (PV) inverters, electric vehicle (EV) charging stations, and switching power supplies. By implementing an enhanced junction barrier Schottky (JBS) structure, the TRSxxx120Hx series allows a forward voltage (V<sub>F</sub>) of 1.27 V (typ). The merged PiN-Schottky incorporated into a JBS structure reduces diode losses under high current conditions. The TRS40N120H of the new series accepts a forward DC current (I<sub>F(DC)</sub>) of 40 A (max) and a maximum non-repetitive peak forward surge current (I<sub>FSM</sub>) of 270 A, with the maximum case temperature (T<sub>C</sub>) of all devices being +175 °C. Combined with the lower capacitive charge and leakage current, the products help improve system efficiency and simplify thermal design. For instance, at a reverse voltage (V<sub>R</sub>) of 1200 V, the TRS20H120H diode housed in the TO-247-2L package provides a total capacitive charge (Q<sub>C</sub>) of 109 nC and reverse current (I<sub>R</sub>) of 2 µA. | 25.09.2024 09:30:00 | Sep | news_2024-10-01_14.jpg | \images\news_2024-10-01_14.jpg | https://toshiba.semicon-storage.com/ap-en/semiconductor/product/diodes/sic-schottky-barrier-diodes/articles/3rd-generation-sic-schottky-barrier-diode.html | toshiba.semicon-storage.com |
| Meeting future Energy Demands | TTI IP&E – Europe is supplying Mean Well power com... | 12117 | Industry News | Meeting future Energy Demands | TTI IP&E – Europe is supplying Mean Well power components, including the very latest DHP-1UT-B(HV) mounting rack power shelf, to support electronics engineers designing and building the next generation of renewable and hydrogen energy systems. "EU Environmental regulations require 45% of Europe's energy generation to come from renewable sources by 2030," says Markus Lorenz, Director Industry Marketing, Industrial, TTI Europe. "To achieve this, green energy generated from wind turbines and solar panels must be stored efficiently. Hydrogen is also expected to play a major part in the transition towards a more sustainable future as using hydrogen power is the most efficient way to transport and store energy with higher density and over a longer time frame without losses." The Mean Well DHP-1UT-B(HV) mounting rack power shelf for standard 19" cabinets enables a reliable power supply in a modular design and is ideal for applications including electrolysis, distributed power architecture and EV charging stations. | 24.09.2024 13:00:00 | Sep | news_2024-10-01_8.jpg | \images\news_2024-10-01_8.jpg | https://www.ttieurope.com/content/ttieurope/en/about-tti/news-center/corporate-news/press-releases/2024/september/pr-09242024-tti-europe-stock-means-power-shelf-will-support-future-energy-demands.html | ttieurope.com |
| 4th Generation of SiC MOSFETs for up to 1200 V | STMicroelectronics has introduced its fourth gener... | 12124 | Product Release | 4th Generation of SiC MOSFETs for up to 1200 V | STMicroelectronics has introduced its fourth generation STPOWER silicon carbide MOSFET technology. While serving the needs of both the automotive and industrial markets, the technology is particularly optimized for traction inverters. These SiC MOSFET devices, which will be made available in 750 V and 1200 V classes, are said to "improve energy efficiency and performance of both 400 V and 800 V EV bus traction inverters, bringing the advantages of SiC to mid-size and compact EVs". The new generation SiC technology is also suitable for a variety of high-power industrial applications, including solar inverters, energy storage solutions and datacenters, significantly improving energy efficiency for these growing applications. Qualification of the 750 V class of the fourth generation SiC technology platform is already completed, and ST expects to complete qualification of the 1200 V class in the first quarter of 2025. Commercial availability of devices with nominal voltage ratings of 750 V and 1200 V will follow, allowing designers to address applications operating from standard AC-line voltages up to high-voltage EV batteries and chargers. The average die size of Generation 4 devices is 12-15% smaller than that of Generation 3, considering an R<sub>DS(on)</sub> at 25 °C. | 24.09.2024 10:30:00 | Sep | news_2024-10-01_15.jpg | \images\news_2024-10-01_15.jpg | https://www.st.com/en/power-transistors/stpower-sic-mosfets.html | st.com |
| Module Provider supports local Sports Team | Vincotech has extended its fruitful cooperation wi... | 12112 | Industry News | Module Provider supports local Sports Team | Vincotech has extended its fruitful cooperation with TSV Haching München into the upcoming season. The company has been a main sponsor and an active supporter of the club for two years now. Vincotech's backing for the local volleyball team echoes the company's philosophy. Committed to nurturing its ties to the community and championing the spirit of partnership at work and at play, Vincotech company sees its values reflected in this sport and in the aspirations of TSV Haching München's team of young international athletes. | 24.09.2024 08:00:00 | Sep | news_2024-10-01_3.jpg | \images\news_2024-10-01_3.jpg | https://www.vincotech.com/news/company-news/article/vincotech-sponsors-tsv-haching-for-the-third-year-running.html | vincotech.com |
| Research: Isolating Piezoelectric DC/DC Converters Without Transformers | Building on its earlier breakthroughs introducing ... | 12111 | Industry News | Research: Isolating Piezoelectric DC/DC Converters Without Transformers | Building on its earlier breakthroughs introducing a new way of converting electrical power using piezoelectric resonators and developing a dual-bridge piezoelectric resonator converter, the technology research institute CEA-Leti has paved the way to isolating piezoelectric converters without transformers. The topology of dual-bridge isolated piezoelectric resonator converter (DB-IPRC) provides isolation using two independent piezoelectric resonators. The improved version of the DC/DC converter significantly improves efficiency, while maintaining the converter isolation principle. The results were reported in a paper, noting that "for a 200 V to 120 V conversion, the converter shows an efficiency of 96.2% with the inductive assisting circuit, 94.3% with the piezoelectric one and 87.4% without any assisting circuit. The (piezoelectric resonator) assisting circuit offers a gain in efficiency over a smaller operating range than the inductance, but leads to a flatter converter." According to CEA-Leti the use of piezoelectric resonators instead of inductors in power conversion "will lead to a dramatic reduction in the size of power converters." The research facility claims that the "results make it possible to extend this type of compact conversion to isolated converters." So this type of converter is said to be now compatible with a much wider range of applications, such as TVs, phones, tablets and electrical tools. The technology research institute says that in power conversion, piezoelectrics operate at high frequencies, greater than 100 kHz, "with no limits in terms of input power" enabling it to reach power levels of several hundred watts. The range of applications is therefore expected to be very broad, with most converters having a rated power of less than 100 W. | 24.09.2024 07:00:00 | Sep | news_2024-10-01_2.jpg | \images\news_2024-10-01_2.jpg | https://www.cea.fr/english | cea.fr |
| Medical Power Supplies meet CF Requirements | Advanced Energy has developed the NCF150 series of... | 12127 | Product Release | Medical Power Supplies meet CF Requirements | Advanced Energy has developed the NCF150 series of high-isolation, low-leakage current AC/DC power supplies that enable medical equipment designers to meet the cardiac floating (CF) requirements of the IEC 60601-1 medical safety standard using off-the-shelf products. Type CF is the most stringent medical electrical safety classification and is essential for medical products that may come in direct contact with the heart, including dialysis machines, cardiac-related systems and platforms for electrosurgery. The SL NCF150 series delivers a maximum output power of up to 150 W and offers voltages of 12 V, 15 V, 19 V, 24 V and 48 V. An optional 5 V standby and 12 V fan output are also available. All units in the SL NCF150 series have a patient leakage current below 10 µA, feature EMI Class B, 2 MOPP isolation and 5 kV defibrillator pulse withstand capabilities. SL NCF150 power supplies accept a universal input of 85 to 264 V<sub>AC</sub>, operate with a full-load efficiency greater than 90% and feature protection against overvoltage, overload, overtemperature and short-circuit conditions as standard. This is the first release of the CF rated family and will be followed by higher power models launching soon. | 23.09.2024 13:30:00 | Sep | news_2024-10-01_18.jpg | \images\news_2024-10-01_18.jpg | https://www.advancedenergy.com/en-us/products/ac-dc-power-supply-units/open-frame-low-power-psus/cf-rated-products/ncf150/ | advancedenergy.com |
| Working together for Biodiversity with Electronics and AI | "How can we counteract the decline in biodiversity... | 12133 | Industry News | Working together for Biodiversity with Electronics and AI | "How can we counteract the decline in biodiversity?" This question was discussed extensively at DLD Nature, which took place in September in Munich, Germany. At the conference and for the first time, Würth Elektronik presented in the tech talk with new cooperation partner, Hula Earth, a deep-tech start-up that specializes in the real-time monitoring of biodiversity. Their presentation was titled "Electronics for Innovation in Nature Protection." For real-time measurement, Hula Earth uses solar-powered BioT sensors that continuously collect various biodiversity-relevant data and transmit it via a wireless network. This also works in remote forest areas. The results are combined with satellite data, analyzed using artificial intelligence, and integrated into a user-friendly platform. Würth Elektronik and Hula Earth are now working together to optimize the handmade prototypes of the BioT sensors so that they can be produced efficiently in large quantities. Würth Elektronik is supporting the startup in a variety of ways including support in terms of EMC safety, energy management, functionality, scalability, and energy efficiency as well as prototyping and testing. Additionally, Würth Elektronik provides design-in support, including for circuit board design, interface planning, and the communication software. | 20.09.2024 09:00:00 | Sep | news_2024-10-15_4.jpg | \images\news_2024-10-15_4.jpg | https://www.we-online.com/en/news-center/press?instance_ID=5506&d=DLD-nature-2024 | we-online.com |
| Hall-Effect Dual Latch Sensor | Melexis adds the MLX92253 to its Hall-effect dual ... | 12146 | Product Release | Hall-Effect Dual Latch Sensor | Melexis adds the MLX92253 to its Hall-effect dual latch portfolio. This sensor offers two independent signal tracks for minimal jitter as well as consistent 90° phase shift regardless of magnet pole pitch. This enables accurate speed & direction ECU calculation as well as direct transfer across multiple platforms. It is suited for DC motors and encoders used in a wide range of embedded applications, including automotive, alternative mobility, consumer and industrial. The MLX92253 distinguishes itself by featuring two hall plates, one Z axis and one X axis, with two independent signal tracks. It also has a common magnetic center, which ensures a consistent 90° phase shift (quadrature) between the two speed outputs, independent of the magnet pole pitch. It features a chopping frequency of 500 kHz, an operating voltage range from 2.7 V to 5.5 V, a working temperature of -40 °C to 150 °C and an output state feedback during start-up, which can be utilized to convert the two outputs into inputs during start-up. This allows a microcontroller to retrieve the previous state of the MLX92253 before power-down, ensuring that no movement is missed. The device is available in a TSOT23 package and on request as engineering samples in a VA package. | 19.09.2024 14:30:00 | Sep | news_2024-10-15_17.jpg | \images\news_2024-10-15_17.jpg | https://www.melexis.com/en/product/MLX92253/4-wire-3D-Triaxis-dual-latch-switch-low-voltage | melexis.com |
| Research: Lithium-Metal Battery with Solid Electrolyte achieves 1070 Wh/L | As the coordinator of the H2020 SOLiDIFY consortiu... | 12116 | Industry News | Research: Lithium-Metal Battery with Solid Electrolyte achieves 1070 Wh/L | As the coordinator of the H2020 SOLiDIFY consortium, imec, together with 13 European partners, announces the development of a high-performance lithium-metal solid-state battery. The prototype battery pouch cell, manufactured by imec in the battery assembly lab at EnergyVille, Belgium, features a unique "liquid-to-solid" processed solid electrolyte, jointly developed by imec and the partners. It boasts an energy density of 1070 Wh/L, compared to 800 Wh/L for state-of-the art lithium-ion batteries. The manufacturing process, which is said to be cost less than €150 per kWh while being adaptable to existing lithium-ion battery production lines, paves the way for commercially viable solid lithium batteries for electromobility. The high energy density was achieved by combining a high-capacity composite cathode, separated from a thin lithium metal anode by a thin solid electrolyte separator (50 µm), which resulted in a compact battery cell stack. In addition, the consortium overcame mechanical strength and cathode impregnation challenges to increase the cell's charge rate to 3 hours and lifetime to 100 cycles. Compared to liquid electrolytes, the thermally stable solid cell had a reduced flammability, improving safety. The application of nanometer-thin protective coatings enabled the use of cobalt-lean NMC cathodes, reducing environmental impact while providing higher capacity. Next steps include further upscaling of this high-performance battery technology. | 19.09.2024 12:00:00 | Sep | news_2024-10-01_7.jpg | \images\news_2024-10-01_7.jpg | https://solidify-h2020.eu/ | solidify-h2020.eu |
| N-Channel MOSFETs for 40 – 100 V | ROHM has released N-channel MOSFETs – RF9x120BKFRA... | 12125 | Product Release | N-Channel MOSFETs for 40 – 100 V | ROHM has released N-channel MOSFETs – RF9x120BKFRA / RQ3xxx0BxFRA / RD3x0xxBKHRB – featuring ON-resistances that are suited for several automotive applications, including motors for doors and seat positioning, as well as LED headlights. Offered in voltage ratings of 40 V, 60 V, and 100 V, the new products incorporate a split-gate structure to achieve low ON-resistance. All models are qualified under the AEC-Q101 automotive reliability standard. Design engineers can select from among three package types, depending on the application. For space-constrained sets like ADAS, the compact DFN2020Y7LSAA (2.0 mm × 2.0 mm) and HSMT8AG (3.3 mm × 3.3 mm) packages fit well. For automotive power applications, the widely used TO-252 (DPAK) package (6.6 mm × 10.0 mm) is also available. In addition, ROHM has further enhanced mounting reliability by utilizing wettable flank technology for the DFN2020Y7LSAA package and gull-wing leads for the TO-252 package. P-channel products are also scheduled for future release. | 19.09.2024 11:30:00 | Sep | news_2024-10-01_16.jpg | \images\news_2024-10-01_16.jpg | https://www.rohm.com/news-detail?news-title=2024-09-19_news_mosfet&defaultGroupId=false | rohm.com |
| Design and Service Center in the Greater Boston Area | Advanced Energy has opened a design and service ce... | 12114 | Industry News | Design and Service Center in the Greater Boston Area | Advanced Energy has opened a design and service center in Wilmington, MA. The facility will focus on the development of advanced power technologies for semiconductor, industrial and medical applications. Combining laboratory and office space, the center will be the workspace for up to 50 employees. It supports AE's rapid growth strategy by enabling the launch of leading technology platforms, reducing time-to-market for new products, and ensuring smooth transitions to high-volume manufacturing. The design and service center features labs as well as office space with a gym and cafeteria. It is located near top schools like MIT and Northeastern. | 19.09.2024 10:00:00 | Sep | news_2024-10-01_5.jpg | \images\news_2024-10-01_5.jpg | https://ir.advancedenergy.com/news/advanced-energy-opens-design-and-service-center-in-the-greater-boston-area/bfab5c16-eaad-45be-998e-7e947578dda9/ | advancedenergy.com |
| Insights into Design Challenges of Motor Control | Mouser Electronics announces an eBook offering a d... | 12134 | Industry News | Insights into Design Challenges of Motor Control | Mouser Electronics announces an eBook offering a deep dive into motor control, and with the push to achieve a more sustainable future, the challenge is to maximize efficiency while striking a balance with costs. In the eBook dubbed "Mastering Motor Control Design" Mouser offers electrical design engineers of all levels of experience practical information on system parameters and product selection. Topics include selecting the correct type of motor for the application, driver and microcontroller options, motor power components, motor isolation and current sensing, and more. The eBook also includes convenient links to select motor control products. | 19.09.2024 10:00:00 | Sep | news_2024-10-15_5.jpg | \images\news_2024-10-15_5.jpg | https://resources.mouser.com/explore-all/mastering-motor-control-design-guide | mouser.com |
| US Funding for WBG Power Projects | The White House and U.S. Department of Defense ann... | 12110 | Industry News | US Funding for WBG Power Projects | The White House and U.S. Department of Defense announced the first year of funding, totaling $19 million, for four additional projects for the Commercial Leap Ahead for Wide Bandgap Semiconductors (CLAWS) Microelectronics Commons Hub, headed by North Carolina State University. The first of the four selected projects is "High Permittivity Dielectrics to Increase the Performance of III-Nitride Transistors" and led by NC State. It will increase the efficiency and radiation hardness of advanced transistors used in avionics and satellite applications. Partners include MACOM, EPC Space, Lockheed Martin, University of Florida, NASA and Sandia National Laboratories. The second project is named "Transition Readiness for NITride Rf Overmatch (T/R NITRO)" and led by MACOM. It will deliver advance prototypes of high frequency transistors and circuits for use in electronic warfare, radars, and 5G/6G telecommunications. The partners include NC State, Adroit Materials and the Naval Research Laboratory. The third project is about "Advanced High Voltage Silicon Carbide Switches". Led by GE Aerospace it will push the development of 6.5 to 10 kV planar field-effect transistors (FETs) into a low-volume production environment and develop 6.5 to 10 kV Superjunction (SJ) devices. The partners include Coherent, NC State, Stony Brook University, University at Albany, Naval Research Laboratory, DEVCOM and N.C. A&T State University. The fourth project covers "Advanced Power Switches Using UWBG Gallium Oxide". Led by Kyma Technologies it will advance the state-of-the-art in gallium oxide high voltage switching devices by producing power diodes and power transistors capable of blocking up to 10 kV, and make available the epilayers, devices, and composite substrates to the DoD and community at large through the CLAWS hub. The partners include NC State, University of California at Santa Barbara, Modern Microsystems, the Air Force Research Laboratory, Naval Research Laboratory and GE Aerospace. | 19.09.2024 06:00:00 | Sep | news_2024-10-01_1.jpg | \images\news_2024-10-01_1.jpg | https://news.ncsu.edu/2024/09/claws-hub-to-lead-leap-ahead-projects/ | ncsu.edu |
| Strategic Alliance regarding Semiconductor Ecosystem in India | Tata Group and Analog Devices announced a strategi... | 12119 | Industry News | Strategic Alliance regarding Semiconductor Ecosystem in India | Tata Group and Analog Devices announced a strategic alliance to explore potential cooperative manufacturing opportunities. Tata Electronics, Tata Motors, and Tejas Networks signed a Memorandum of Understanding (MoU) with ADI to enhance strategic and business cooperation, explore opportunities for semiconductor manufacturing in India, and use ADI's products in Tata applications like electric vehicles and network infrastructure. The companies also agree to have strategic roadmap alignment discussions. As previously announced, Tata Electronics is investing in its own facilities by building India's first fab in Dholera, Gujarat with a total investment of $11 billion. In addition, Tata Electronics will be investing another $3 billion in a greenfield facility in Jagiroad, Assam for the assembly and testing of semiconductor chips. Tata Electronics and ADI intend to explore opportunities to manufacture ADI's products in Tata Electronics' fab in Gujarat and OSAT in Assam. Tata Motors and ADI intend to explore opportunities for engagement in electronics hardware components for energy storage solutions and power electronics in both commercial and passenger vehicle businesses. Tejas Networks and ADI intend to explore opportunities for engagement in electronics hardware components for network infrastructure. | 18.09.2024 15:00:00 | Sep | news_2024-10-01_10.jpg | \images\news_2024-10-01_10.jpg | https://www.analog.com/en/newsroom/press-releases/2024/9-18-2024-tata-adi-announce-strategic-alliance-explore-joint-opportunities.html | analog.com |
| Office in the heart of Southeast Asia | In August Würth Elektronik eiSos opened its first ... | 12113 | Industry News | Office in the heart of Southeast Asia | In August Würth Elektronik eiSos opened its first Thai branch office - in the Rama 9 business center in Bangkok. The company says that this gives the up-and-coming Asian business a secure base and new impetus for growth. Würth Elektronik eiSos points out that the location in the heart of the vibrant business district has excellent public transport connections. Würth Elektronik's corporate history in Thailand began back in 2006 - with the support of the Würth Elektronik eiSos team in Singapore. The first Field Sales Engineer was then hired in September 2010. The Thailand business developed extremely positively. Under the leadership of Regional Sales Manager Chantwut Zukzwang, General Manager Sebastian Tan and thirteen employees are now driving Würth Elektronik's Thailand business forward. The new location can already rely on a stable sales base that also includes major EMS customers. | 18.09.2024 09:00:00 | Sep | news_2024-10-01_4.jpg | \images\news_2024-10-01_4.jpg | https://www.we-online.com/en/news-center/press?instance_ID=5506&d=thailand-opening | we-online.com |
| Silicon Valley Design and Innovation Centre | XP Power has opened the Silicon Valley Innovation ... | 12118 | Industry News | Silicon Valley Design and Innovation Centre | XP Power has opened the Silicon Valley Innovation Centre (SVIC) as its new North America Headquarters in San Jose, CA. This 85,000-square-foot facility integrates research and technology development, design engineering, pilot manufacturing, warehousing logistics, and service/support under one roof. The Innovation Centre facilitates rapid development cycles, allowing the company to deliver solutions efficiently - supported by a multi-disciplined Engineering Team with design and industry experience across semiconductor, healthcare, military, and industrial sectors. The facility includes a Reliability Lab with multiple Highly Accelerated Life Test (HALT), Highly Accelerated Stress Screen (HASS) and Environmental Chambers. An etch Plasma Chamber focuses on system validation for semiconductor fabrication equipment, and a 3-meter Anechoic EMC Chamber complements existing EMC compliance test stations to accelerate time-to-market. A dedicated Test Development Team is in place to design custom test equipment for specialized power conversion applications. The SVIC also incorporates eco-friendly features such as electric vehicle charging stations, automated LED lighting and HVAC systems, dishwashers to discourage single-use dishes, and the elimination of all Single-Use Plastics (SUP). | 17.09.2024 14:00:00 | Sep | news_2024-10-01_9.jpg | \images\news_2024-10-01_9.jpg | https://www.xppower.com/resources/press-releases/xp-power-unveils-silicon-valley-design-and-innovation-center | xppower.com |
| Micro DC/DC Stepup Converter operate from 0.9 V | Torex Semiconductor has launched its XCL109/XCL110... | 12129 | Product Release | Micro DC/DC Stepup Converter operate from 0.9 V | Torex Semiconductor has launched its XCL109/XCL110 series of inductor built-in step-up DC/DC converters. The XCL109/XCL110 series incorporates both the IC and coil into a package measuring 2.0 x 2.5 x h1.04 mm<sup>3</sup>. It is a step-up DC/DC converter that requires small input and output capacitors as peripheral components. The converter can start operation with an input voltage as low as 0.9 V, making it suitable for devices powered by a single alkaline or nickel-metal hydride battery. The output voltage is adjustable in 0.1 V increments within the range of 1.8 V to 5.5 V, and it operates at ambient temperatures of up to 105 °C. This product is available in three types to suit various applications: The "load disconnect type" cuts off the connection between input and output during standby, minimizing battery consumption, while the "bypass type" maintains the connection between input and output during MCU sleep mode, supplying the battery voltage directly. It boosts the voltage to 3.3 V or other levels only during active mode, thereby reducing power consumption during sleep and contributing to overall low power consumption of the device. The "output OR type" is ideal for output OR connections in configurations with multiple power lines or backup systems. The XCL109/XCL110 series are designed for industrial equipment, IoT, mobile devices, wearables, healthcare, and any other devices that demand compact size, low power consumption, and high functionality/performance while prioritizing battery life. The device is integrated into a CL-2025-02 package, which is pin-compatible with other inductor built-in step-up DC/DC products. | 12.09.2024 15:30:00 | Sep | news_2024-10-01_20.jpg | \images\news_2024-10-01_20.jpg | https://www.torexsemi.com/news/product/20240912_4499 | torexsemi.com |
| 2024 ASCM Award of Excellence | Infineon has received the "ASCM Award of Excellenc... | 12115 | Industry News | 2024 ASCM Award of Excellence | Infineon has received the "ASCM Award of Excellence – Corporate Transformation" from the Association for Supply Chain Management (ASCM). The award recognizes an organizational transformation that improves business by assessing the supply chain using ASCM's global standards, products, services and resources. Infineon was honored for a supply chain initiative that implemented the Supply Chain Operations Reference (SCOR) model of ASCM. By focusing on customer-centricity, the semiconductor company "significantly improved customer satisfaction, optimized capacity use and realized substantial cost savings". Infineon transformed its supply chain to become more robust, agile, and resilient. The primary goals of this transformation were to enhance forecasting accuracy, implement agile response mechanisms like daily automated execution of the physical flexibility enabled by a superior master data system, adopt cost-efficient procurement practices, and build resilient partnerships. The ASCM is the global pacesetter of organizational transformation, talent development and supply chain innovation. As the largest association for supply chain, ASCM members and worldwide alliances fuel innovation and inspire accountability for resilient, dynamic and sustainable operations. | 12.09.2024 11:00:00 | Sep | news_2024-10-01_6.jpg | \images\news_2024-10-01_6.jpg | https://www.infineon.com/cms/en/about-infineon/press/market-news/2024/INFXX202409-140.html | infineon.com |
| Assuring Electromagnetic Compatibility in Australia | Hanwha Defence Australia (HDA) have chosen a Rohde... | 12135 | Industry News | Assuring Electromagnetic Compatibility in Australia | Hanwha Defence Australia (HDA) have chosen a Rohde & Schwarz designed and built EMC test solution. This capability is part of Stage 2 of the H-ACE facility where HDA is building the LAND 8116 Phase 1 Huntsman vehicles and LAND 400 Phase 3 Redback Infantry Fighting Vehicles. Custom built with a bespoke turntable for heavy vehicles, the E3 capability will be the largest of its kind in the southern hemisphere, providing the means for H-ACE-built vehicles to be tested to internationally recognised standards. Rohde & Schwarz Australia will be responsible for all elements of supply, including the in-country coordination and delivery of the E3 capability, and will also train the technical workforce to operate the facility. | 12.09.2024 11:00:00 | Sep | news_2024-10-15_6.jpg | \images\news_2024-10-15_6.jpg | https://www.rohde-schwarz.com/uk/about/news-press/all-news/hanwha-defence-australia-selects-rohde-schwarz-for-electromagnetic-compatibility-assurance-of-australian-armoured-vehicles-press-release-detailpage_229356-1518276.html | rohde-schwarz.com |
| PCIM Expo 2025 with more Exhibition Space | The growing demand for power electronics is increa... | 12153 | Event News | PCIM Expo 2025 with more Exhibition Space | The growing demand for power electronics is increasing the need for information and dialog within the industry. Therefore, the PCIM Expo will expand from four to six halls in 2025 to create even more space for development potential. With the new halls 4 and 4A, the Nuremberg exhibition will therefore, for the first time, extend over six exhibition halls. Event visitors will thus have access to a wider range of companies, products, and interaction opportunities, which is key to shaping the further development and future of power electronics. | 11.09.2024 11:00:00 | Sep | news_2024-11-01_6.jpg | \images\news_2024-11-01_6.jpg | https://pcim.mesago.com/nuernberg/en/press/press-releases/pcim-press-releases/newhalls.html | pcim.mesago.com |
| Current Sensors for up to 800 A delivering 1 MHz Bandwidth | Allegro MicroSystems announced two XtremeSens&trad... | 12138 | Industry News | Current Sensors for up to 800 A delivering 1 MHz Bandwidth | Allegro MicroSystems announced two XtremeSens™ TMR sensors that streamline high power density designs, provide space savings while improving energy efficiency. Allegro's latest solutions, CT455 and CT456, offer high-bandwidth and low noise that enable precise current measurements for AI data center and automotive powertrain applications. The CT455 sensor supports two standard field ranges, allowing it to sense and translate magnetic fields into a linear analog output voltage, while the CT456 supports a preprogrammed ±6 mT field range. They are designed to enable high-accuracy current measurements on PCB or busbar applications from 80 A up to above 800 A, depending on the configuration, with the best performance advantages in the 80-200 A range. Unlike traditional high-power current sensors, Allegro's TMR sensors offer a contactless, non-intrusive solution that delivers 1 MHz bandwidth and a 300 ns response time to enable faster power conversion. The company claims that the devices are "optimized for rapid changes in voltage over time (high dv/dt)". For packaging 8-pin SOIC and TSSOP options are used. Evaluation boards are also available. | 11.09.2024 06:30:00 | Sep | news_2024-10-15_9.jpg | \images\news_2024-10-15_9.jpg | https://www.allegromicro.com/en/products/emerging-technologies/tmr | allegromicro.com |
| World's first 300 mm Power Gallium Nitride (GaN) Technology | Infineon Technologies has succeeded in developing ... | 12090 | Industry News | World's first 300 mm Power Gallium Nitride (GaN) Technology | Infineon Technologies has succeeded in developing the world's first 300 mm power gallium nitride (GaN) wafer technology, accomplished in an existing and scalable high-volume manufacturing environment - a "breakthrough" which is said to "help substantially drive the market for GaN-based power semiconductors". Chip production on 300 mm wafers offers 2.3 times more chips per wafer than on 200 mm wafers. "The technological breakthrough will be an industry game-changer and enable us to unlock the full potential of gallium nitride", Jochen Hanebeck, CEO of Infineon Technologies, says. "Infineon is mastering all three relevant materials: silicon, silicon carbide and gallium nitride. Nearly one year after the acquisition of GaN Systems, we are demonstrating again that we are determined to be a leader in the fast-growing GaN market." Infineon has succeeded in manufacturing 300 mm GaN wafers on an integrated pilot line in existing 300 mm silicon production in its power fab in Villach/Austria. The company intends to "further scale GaN capacity aligned with market needs". Infineon claims that "300 mm GaN manufacturing will put Infineon in a position to shape the growing GaN market which is estimated to reach several billion US-Dollars by the end of the decade" and that "fully scaled 300 mm GaN production will contribute to GaN cost parity with silicon on R <sub>DS(on)</sub> level, which means cost parity for comparable Si and GaN products. The semiconductor manufacturer will present the first 300 mm GaN wafers to the public at the electronica trade show in November 2024 in Munich. | 11.09.2024 06:00:00 | Sep | news_2024-09-15_1.jpg | \images\news_2024-09-15_1.jpg | https://www.infineon.com/cms/en/about-infineon/press/press-releases/2024/INFXX202409-142.html | infineon.com |
| Transformers for Power Line Communication | Communication between charging stations and electr... | 12128 | Product Release | Transformers for Power Line Communication | Communication between charging stations and electric vehicles via an interface compliant with EN ISO 15118 is a fundamental requirement for the public charging infrastructure. Würth Elektronik now offers the WE-PLC product series of SMT transformers for Power Line Communication (PLC). These PLC transformers are well-suited for galvanic isolation of the PLC system from the power supply. They are designed for data signals between 500 kHz and 30 MHz isolating the low-voltage range from the high-voltage range. The WE-PLC product series offers a high test voltage of 4500 V<sub>RMS</sub> for transformers of this package size (13.6 x 9.9 mm<sup>2</sup> footprint) with a maximum leakage inductance of 0.2 µH. The WE-PLC transformers are available with turns ratios of 1:1:1 and 1:4:3 for EV charging and AC interfaces for grid communication. The operating voltage is up to 250 V<sub>AC</sub>. | 10.09.2024 14:30:00 | Sep | news_2024-10-01_19.jpg | \images\news_2024-10-01_19.jpg | https://www.we-online.com/en/components/products/WE-PLC | we-online.com |
| Industrial 3 kW programmable Power Supplies | TDK Corporation has introduced the 3000 W TDK-Lamb... | 12126 | Product Release | Industrial 3 kW programmable Power Supplies | TDK Corporation has introduced the 3000 W TDK-Lambda brand HWS3000 programmable AC/DC power supplies in a 270 x 150 x 61 mm<sup>3</sup> case. The nominal output voltages (24 V, 48 V, 60 V or 130 V) and output currents are fully programmable (CV/CC) from zero up to their maximum rating. The HWS3000 series is available with an 85 – 265 V<sub>AC</sub> single-phase or three-phase 170 – 265 V<sub>AC</sub> input. Output programming can be achieved using a serial RS485 interface (MODBus protocol) or analog 1 – 5 V or 4 – 20 mA signals. The speed fan is variable with typically 45 dB audible noise at <70% load, and a 25 °C ambient temperature. The power supplies can be used in a wide range of applications, including test and measurement, semiconductor fabrication, RF amplifiers, laser machining, printing, and industrial equipment. The HWS3000G can deliver 1500 W with a low-line single-phase input voltage (85 to 132 V<sub>AC</sub>) and 3000 W at high-line (170 to 265 V<sub>AC</sub>). The HWS3000GT provides 3000 W from a three-phase input voltage of 170 - 265 V<sub>AC</sub>. Four nominal output voltages, 24 V, 48 V, 60 V and 130 V, can be programmed to provide 0 - 28.8 V, 0 - 52.8 V, 0 – 66 V, and 0 – 156 V. Up to three units can be connected in series, or ten units in parallel. The output voltage slew rate can be digitally programmed and monitored, along with information regarding cumulative operating time, fault log, and product identification information. Digital programming can be performed without turning the power supply on. | 10.09.2024 12:30:00 | Sep | news_2024-10-01_17.jpg | \images\news_2024-10-01_17.jpg | https://product.tdk.com/en/power/hws-g/ | tdk.com |
| Automotive-qualified Small Signal MOSFETs in tiny Packages | Nexperia released single and dual small-signal MOS... | 12122 | Product Release | Automotive-qualified Small Signal MOSFETs in tiny Packages | Nexperia released single and dual small-signal MOSFETs in miniature DFN packages. The automotive-qualified devices are available in DFN1110D-3 and DFN1412-6 respectively. Particularly the DFN1110D-3 (1.1 mm x 1 mm) package has seen increasingly wide adoption and is quickly becoming the 'de-facto' industry standard package for small-signal MOSFETs and bipolar transistors intended for use in automotive applications. DFN1110D-3 and DFN1412-6 are leadless packages that offer superior thermal performance, with almost 50% lower thermal resistance from junction to ambient (R<sub>thj-s</sub>), from a tiny footprint (up to 80% smaller). This makes them a highly attractive alternative to established high-volume leaded enclosures such as SOT23, SOT323, SOT363, or SOT666, thereby addressing the automotive industry's relentless demand for miniaturized components. The DFN1110-D-3 also features side-wettable flanks to support lower-cost automated optical inspection (AOI) of solder joints. | 10.09.2024 08:30:00 | Sep | news_2024-10-01_13.jpg | \images\news_2024-10-01_13.jpg | https://www.nexperia.com/products/mosfets/ | nexperia.com |
| 30 V Power MOSFETs for Mass Market Applications | Infineon has expanded its StrongIRFET™ 2 pow... | 12121 | Product Release | 30 V Power MOSFETs for Mass Market Applications | Infineon has expanded its StrongIRFET™ 2 power MOSFET portfolio to 30 V solutions. Optimized for high robustness and ease-of-use, the power MOSFETs were specifically designed to meet the requirements of a wide range of mass market applications. Amongst these applications are industrial switched-mode power supplies (SMPS), motor drives, battery-powered applications, battery management systems, and uninterruptible power supplies (UPS). The 30 V technology offers up to a 40 percent R <sub>DS(on)</sub> improvement and up to a 60 percent reduction in Q <sub>G</sub> compared to the previous generation of StrongIRFET devices. The StrongIRFET 2 power MOSFETs in 30 V are available now in a TO-220 package. By the end of 2024, the portfolio will be available in a wider range of industry-standard packages and pin-out options, including to DPAK, D<sup>2</sup>PAK, PQFN and SuperSO8. | 10.09.2024 07:30:00 | Sep | news_2024-10-01_12.jpg | \images\news_2024-10-01_12.jpg | https://www.infineon.com/strongirfet2_30v/ | infineon.com |
| 2" x 4" 250 W Medical and Industrial Power Supply Series | TDK announces additional output voltage models to ... | 12105 | Product Release | 2" x 4" 250 W Medical and Industrial Power Supply Series | TDK announces additional output voltage models to the 250 W rated TDK-Lambda brand CUS250M series of power supplies in the industry standard 2" x 4" footprint. The full range now covers 12 V, 15 V, 18 V, 24 V, 28 V, 36 V and 48 V and is certified to the IEC 62368-1 and IEC 60601-1 safety standards for industrial and medical applications. This includes both Class I and Class II (no earth ground required) installations. The CUS250M has mechanical configurations that enable convection and/or conduction cooling through the product's baseplate to provide silent cooling. Applications include medical, home healthcare, dental, test, measurement, broadcast, professional audio and industrial equipment. The output can be adjusted to accommodate non-standard voltages, either by the factory or using the on-board potentiometer. The CUS250M operates across an 85 to 264 V<sub>AC</sub> input and has a earth leakage current of less than 150 μA - including all tolerances. The touch current is <10 μA (Class I) and <70 μA (Class II). In ambient temperatures of -20 °C to +45 °C the CUS250M can deliver up to 250 W conduction cooled without external air. With appropriate derating, operation at up to +80 °C is also possible. The efficiency is up to 94%, and the average efficiency, measured at 25, 50, 75 and 100% loads, is greater than 91%, while offload power consumption is less than 0.5 W when the output is inhibited. | 09.09.2024 11:30:00 | Sep | news_2024-09-15_16.jpg | \images\news_2024-09-15_16.jpg | https://product.tdk.com/system/files/dam/doc/product/power/switching-power/ac-dc-converter/catalog/cus250m_e.pdf | lambda.tdk.com |
| 40 V MOSFETs in PDFN 33 Packages | Magnachip Semiconductor released four 40V MXT MV M... | 12103 | Product Release | 40 V MOSFETs in PDFN 33 Packages | Magnachip Semiconductor released four 40V MXT MV MOSFETs designed in Power Dual Flat No-Lead (PDFN) 33 packages for automotive applications. This package reduces the area by more than 60% and the weight by approximately 75% as compared to 40 V MOSFET products packaged in PDFN56. Among these products, three models - AMDV040N029LVRH, AMDV040N036LVRH, and AMDV040N042LVRH - are distinguished by their gate threshold voltage of 1.8 V. The gate threshold voltage determines the point at which the MOSFET switches from an off-state to an on-state. A lower threshold voltage reduces the energy required to operate the MOSFET, thereby decreasing the overall power consumption of the system. For example, the AMDV040N029LVRH provides a typical/maximum R<sub>DS(on)</sub> of 3.8 mΩ/5.0 mΩ at V<sub>GS</sub> = 4.5 V and of 2.5 mΩ / 2.9 mΩ at V<sub>GS</sub> = 10 V. The typical gate charge Q<sub>g</sub> at V<sub>GS</sub> = 10 V is specified with 30 nC. | 09.09.2024 09:30:00 | Sep | news_2024-09-15_14.jpg | \images\news_2024-09-15_14.jpg | https://www.magnachip.com/automotive-solutions/ | magnachip.com |
| 2300V Baseplate-less SiC Power Modules | Wolfspeed unveiled a silicon carbide module design... | 12120 | Product Release | 2300V Baseplate-less SiC Power Modules | Wolfspeed unveiled a silicon carbide module designed to transform the renewable energy, energy storage, and high-capacity fast-charging sectors through improved efficiency, durability, reliability, and scalability. The 2300V baseplate-less silicon carbide power modules for 1500V DC Bus applications were developed and launched utilizing Wolfspeed's 200 mm silicon carbide wafers. Furthermore, Wolfspeed also announced that it is partnering with EPC Power, who will use the Wolfspeed® modules in utility-grade solar and energy storage systems, which offer a scalable high-power conversion system and high-performance controls and system redundancy. Wolfspeed's 2300V modules will improve system efficiency, while reducing the number of passive components. They are said to "offer 15% greater voltage headroom compared to similar silicon carbide modules, improved dynamic performance with consistent temperature stability, and a substantial reduction in EMI filter size". Wolfspeed's technology achieves a 77% reduction in switching losses over IGBTs and a 2-3x reduction in switching losses for silicon carbide devices intended for 1500V applications. These 2300V modules will enable the industry to adopt the two-level topology, resulting in simplified system design and reduced driver count compared to IGBT-based three-level configurations. The benefits of 2300V modules support a building block approach to scale power tenfold, from kilowatts to megawatts. | 09.09.2024 06:30:00 | Sep | news_2024-10-01_11.jpg | \images\news_2024-10-01_11.jpg | https://www.wolfspeed.com/company/news-events/news/wolfspeed-unveils-cutting-edge-silicon-carbide-module-solution-to-boost-clean-energy-capacity/ | wolfspeed.com |
| Executive Vice President for German Electronics Specialist | With effect from 1 August 2024 Thomas Garz has bee... | 12092 | People | Executive Vice President for German Electronics Specialist | With effect from 1 August 2024 Thomas Garz has been appointed Executive Vice President for the Würth Elektronik eiSos Group. The 37-year-old has been with the Würth Group since 2006. Most recently, he was Senior Vice President of the Würth Line Craft, the core business of the Würth Group, for Scandinavia and additionally responsible for International Systems of the Würth Line. The organizational structure of the Würth Elektronik eiSos Group will remain unchanged as a result of this appointment. Before taking up his position as the Senior Vice President of the Würth Line Craft for Scandinavia, Thomas Garz held various positions, including sales and shop manager, assistant to the management and auditor for Würth. | 06.09.2024 07:00:00 | Sep | news_2024-09-15_3.jpg | \images\news_2024-09-15_3.jpg | https://www.we-online.com/en/news-center/press?instance_ID=5506&d=thomas-garz | we-online.com |
| Long-Term Supply Agreement for SiC Power Devices signed | ROHM and United Automotive Electronic Systems (UAE... | 12095 | Industry News | Long-Term Supply Agreement for SiC Power Devices signed | ROHM and United Automotive Electronic Systems (UAES), a Tier 1 automotive supplier in China, have recently entered into a long-term supply agreement for SiC power devices. Already since 2015, ROHM and UAES have been collaborating and carrying out detailed technical exchanges on automotive applications utilizing SiC power devices. This partnership deepened in 2020 with the establishment of the SiC Joint Research Institute at the UAES headquarters in Shanghai, China. And in 2021 ROHM's advanced SiC power devices and peripheral components were highly evaluated by UAES, resulting in ROHM being selected as a preferred supplier. The close long-standing technical partnership has led to the production and adoption of numerous automotive products equipped with ROHM SiCs, such as onboard chargers and inverters for electric vehicles. This long-term supply agreement is said to ensure UAES sufficient access to SiC power devices to meet the growing demand for SiC-based inverter modules. Going forward, both companies will deepen their collaboration, contributing to technological innovation in the automotive sector by accelerating the development of SiC power solutions for EVs. | 05.09.2024 08:30:00 | Sep | news_2024-09-15_6.jpg | \images\news_2024-09-15_6.jpg | https://www.rohm.com/news-detail?news-title=2024-09-05_news&defaultGroupId=false | rohm.com |
| Acquisition of Austrian Power Supply Company | RECOM has enhanced its portfolio of products and c... | 12094 | Industry News | Acquisition of Austrian Power Supply Company | RECOM has enhanced its portfolio of products and capabilities by acquiring Leco. Like RECOM Leco is based in Austria, and according to RECOM Leco "is one of only a few companies that specialize in design and manufacture of full custom, high-end power solutions". By integrating LECO's engineering expertise and high-end power conversion products into its portfolio, RECOM enhances its market position and delivers more, comprehensive, high-end power supply solutions to its global customer base. "We are proud to have established this partnership with LECO. This provides us with an opportunity to expand our engineering capabilities and product portfolio for our customers, especially in industrial, automation & supply chain end-markets, as well as leveraging our global footprint for the sale of LECO high-end products.", Karsten Bier, CEO and Shareholder, RECOM. | 05.09.2024 08:00:00 | Sep | news_2024-09-15_5.jpg | \images\news_2024-09-15_5.jpg | https://recom-power.com/en/company/newsroom/rec-n-recom-expands-expertise-in-high-end-power-product-design-and-manufacture-with-the-acquisition-of-leco-385.html?7 | recom-power.com |
| Gen-3 Fast SiC to now qualified according to AEC Q101 | Navitas Semiconductor announced several third-gene... | 12109 | Product Release | Gen-3 Fast SiC to now qualified according to AEC Q101 | Navitas Semiconductor announced several third-generation automotive-qualified SiC MOSFETs in D2PAK-7L (TO-263-7) and TOLL (TO-Leadless) surface-mount (SMT) packages. Navitas' proprietary 'trench-assisted planar' technology is claimed to provide "world-leading performance over temperature" and to deliver high-speed, cool-running operation for electric vehicle (EV) charging, traction, and DC-DC conversion. With case temperatures up to 25°C lower than conventional devices, Gen-3 Fast SiC is said to offer an operating life up to 3x longer than alternative SiC products, for high-stress EV environments. Gen-3 Fast MOSFETs are optimized for fast switching speeds at high efficiencies, and support increased power density in EV applications such as AC compressors, cabin heaters, DC-DC converters, and on-board chargers (OBCs). Navitas' EV Design Center has demonstrated already OBC system solutions up to 22 kW with 3.5 kW/l power density, and over 95.5% efficiency. Both 650 and 1,200 V ranges are now AEC Q101-qualified in the traditional SMT D2PAK-7L (TO-263-7) package. For 400 V EVs, the 650 V-rated, surface-mount TOLL package offers a 9% reduction in junction-to-case thermal resistance (R<sub>TH,J-C</sub>), 30% smaller PCB footprint, 50% lower height, and 60% smaller size than the D2PAK-7L. This enables very high-power density solutions, while minimal package inductance of only 2 nH enables fast-switching performance and adequate dynamic package losses. 400 V-rated EV battery architectures are served by the 650 V Gen-3 Fast MOSFETs featuring R<sub>DS(ON)</sub> ratings from 20 to 55 mΩ. The 1,200 V ranges from 18 to 135 mΩ and is optimized for 800 V systems. | 04.09.2024 15:30:00 | Sep | news_2024-09-15_20.jpg | \images\news_2024-09-15_20.jpg | https://navitassemi.com/sic-power-fets-and-diodes/ | navitassemi.com |